Abstract:
Described is an apparatus which comprises: a comparator to be clocked by a clock signal to be provided by a clocking circuit, wherein the clocking circuit includes: a voltage controlled delay line having two or more delay cells; a multiplexer coupled to the voltage controlled delay line and operable to configure the clocking circuit as a ring oscillator with the voltage controlled delay line forming at least one delay section of the ring oscillator; and select logic coupled to the multiplexer, the select logic is to receive a signal indicating arrival of an input clock, and is to control the multiplexer according to the indication. Described is also an apparatus which comprises: a data path to receive input data; and a clock path to receive an input clock and to provide a preconditioned clock to the data path when the input clock is absent.
Abstract:
A system enables memory device specific self-refresh entry and exit commands. When memory devices on a shared control bus (such as all memory devices in a rank) are in self-refresh, a memory controller can issue a device specific command with a self-refresh exit command and a unique memory device identifier to the memory device. The controller sends the command over the shared control bus, and only the selected, identified memory device will exit self-refresh while the other devices will ignore the command and remain in self-refresh. The controller can then execute data access over a shared data bus with the specific memory device while the other memory devices are in self-refresh.
Abstract:
A transmission line interface circuit includes a voltage regulator to control a voltage swing of the transmission line interface circuit for signal transmission. The transmission line interface circuit includes complementary driver elements, including a p-type driver element to pull up the transmission line in response to a logic high, and an n-type driver element to pull down the transmission line in response to a logic low. The voltage regulator is coupled between one of the driver elements and a respective voltage reference to reduce a voltage swing of the transmission line interface circuit.
Abstract:
Described herein are a method and an apparatus for dynamically switching between one or more finite termination impedance value settings to a memory input-output (I/O) interface of a memory in response to a termination signal level. The method comprises: setting a first termination impedance value setting for a termination unit of an input-output (I/O) interface of a memory; assigning the first termination impedance value setting to the termination unit when the memory is not being accessed; and switching from the first termination impedance value setting to a second termination impedance value setting in response to a termination signal level.
Abstract:
Techniques and mechanisms for providing termination for a plurality of chips of a memory device. In an embodiment, a memory device is an integrated circuit (IC) package which includes a command and address bus and a plurality of memory chips each coupled thereto. Of the plurality of memory chips, only a first memory chip is operable to selectively provide termination to the command and address bus. Of the respective on-die termination control circuits of the plurality of memory chips, only the on-die termination control circuit of the first memory chip is coupled via any termination control signal line to any input/output (I/O) contact of the IC package. In another embodiment, the plurality of memory chips are configured in a series with one another, and wherein the first memory chip is located at an end of the series
Abstract:
Examples described herein relate to a pattern of pins where the signals assigned to the pins are arranged in a manner to reduce cross-talk. In some examples, a socket substrate includes a first group of pins that includes a first group of data (DQ) pins separated by at least two Voltage Source Supply (VSS) pins from a second group of DQ pins and a third group of DQ pins separated by at least two VSS pins from a fourth group of DQ pins. In some examples, data strobe signal (DQS) pins are positioned in a column between the first and third groups of DQ pins and the second and fourth groups of DQ pins. In some examples, a second group of pins includes a first group of DQ pins separated by at least two VSS pins from a second group of DQ pins and a third group of DQ pins separated by at least two VSS pins from a fourth group of DQ pins. In some examples, the second group of pins, DQS pins are positioned between the first and third groups of DQ pins and the second and fourth groups of DQ pins.
Abstract:
An apparatus is described. The apparatus includes an electro-mechanical interface having angled signal interconnects, wherein, the angling of the signal interconnects is to reduce noise coupling between the angled signal interconnects.
Abstract:
Dynamic bus inversion (DBI) for programmable levels of a ratio of ones and zeros. A transmitting device identifies a number and/or ratio of ones and zeros in a noninverted version of a signal to be transmitted (“noninverted signal”) and a number and/or ratio of ones and zeros in an inverted version of the signal (“inverted signal”). The transmitting device can calculate whether a difference of ones and zeros in the noninverted signal or a difference of ones and zeros in the inverted signal provides a calculated average ratio of ones to zeros closer to a target ratio. The transmitting device sends the signal that achieves provides the calculated average ratio closer to the target ratio.
Abstract:
Described is an apparatus which comprises: a comparator to be clocked by a clock signal to be provided by a clocking circuit, wherein the clocking circuit includes: a voltage controlled delay line having two or more delay cells; a multiplexer coupled to the voltage controlled delay line and operable to configure the clocking circuit as a ring oscillator with the voltage controlled delay line forming at least one delay section of the ring oscillator; and select logic coupled to the multiplexer, the select logic is to receive a signal indicating arrival of an input clock, and is to control the multiplexer according to the indication. Described is also an apparatus which comprises: a data path to receive input data; and a clock path to receive an input clock and to provide a preconditioned clock to the data path when the input clock is absent.
Abstract:
Methods and apparatus related to multiple rank high bandwidth memory are described. In one embodiment, a semiconductor package includes a high bandwidth memory with multiple ranks. Other embodiments are also disclosed and claimed.