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39 条记录 (耗时 0.02 秒)

    Distributed feedback semiconductor laser
    21.
    发明授权
    Distributed feedback semiconductor laser 失效
    分布式反馈半导体激光器

    公开(公告)号：US4516243A

    公开(公告)日：1985-05-07

    申请号：US436928

    申请日：1982-10-27

    申请人： Katsuyuki Utaka ,  Kazuo Sakai ,  Shigeyuki Akiba

    发明人： Katsuyuki Utaka ,  Kazuo Sakai ,  Shigeyuki Akiba

    IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S3/098

    CPC分类号： H01S5/12 ,  H01S2301/14 ,  H01S5/1215

    摘要： A distributed feedback semiconductor laser which has, in an active layer or an adjoining layer, first corrugations causing periodic refractive index variations in the travelling direction of light and performs laser oscillation by the injection of a current into said active layer portion. In accordance with the present invention, second corrugations are formed to be aligned obliquely to said first corrugations, thereby causing additional loss to the TM mode to permit oscillation in the TE mode alone.

    摘要翻译： 一种分布反馈半导体激光器，其在有源层或邻接层中具有导致光的行进方向周期性折射率变化的第一波纹，并且通过向所述有源层部分注入电流来执行激光振荡。 根据本发明，第二波纹被形成为与所述第一波纹倾斜对准，从而对TM模式造成额外的损耗，以允许单独在TE模式中振荡。

    Wavelength tunable semiconductor laser with narrow band-pass active filter region
    22.
    发明授权
    Wavelength tunable semiconductor laser with narrow band-pass active filter region 失效
    具有窄带通有源滤波器区域的波长可调谐半导体激光器

    公开(公告)号：US4852108A

    公开(公告)日：1989-07-25

    申请号：US216397

    申请日：1988-07-07

    申请人： Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

    发明人： Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

    IPC分类号： H01S5/00 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/12 ,  H01S5/14

    CPC分类号： H01S5/06258 ,  H01S5/10 ,  H01S5/1025 ,  H01S5/12 ,  H01S5/14 ,  Y10S372/704

    摘要： A semiconductor laser is disclosed in which a light emitting region having a light emitting layer and a waveguide region having a waveguide layer which is coupled to at least one side of the light emitting layer with a high efficiency are integrated on the same substrate; the light emitting region includes an active filter section having a diffraction grating equipped with a band-pass filter function; the light emitting region and the waveguide region are electrically isolated and are each provided with an electrode; and the oscillation wavelength of the semiconductor lase is changed by changing the refractive indices of at least the waveguide region and the active filter section through voltage application or current injection to the electrodes, thereby producing a narrow-linewidth, single-wavelength oscillation output light of a wavelength which corresponds to the transmission wavelength of the active filter section determined by the preset refractive indices of the waveguide region and the active filter section.

    Semiconductor optical switch
    23.
    发明授权
    Semiconductor optical switch 失效
    半导体光开关

    公开(公告)号：US4795225A

    公开(公告)日：1989-01-03

    申请号：US143816

    申请日：1988-01-13

    申请人： Kazuo Sakai ,  Yuichi Matsushima ,  Katsuyuki Utaka

    发明人： Kazuo Sakai ,  Yuichi Matsushima ,  Katsuyuki Utaka

    IPC分类号： G02F1/015 ,  G02F1/017 ,  G02F1/025 ,  G02F1/313

    CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F1/3138 ,  G02F2001/0152

    摘要： An optical switch is disclosed in which a switching section for switching the optical path of an incident light is formed in a region where two semiconductor optical waveguides cross each other. The switching section is composed of n-, i-, p-, i- and n-type semiconductor layers laminated in that order, each i-type layer being formed by a superlattice layer composed of a plurality of semiconductor thin films so that the i-type layer is higher in the effective refractive index and smaller in the effective energy gap than each n-type layer. The impurity concentrations of the n-, i-, p-, i-, and n-type layers and the thicknesses of the i-, p-, and i-type layers are determined so that the i-, p- and i-type layers are depleted in a thermal equilibrium state.

    Optical Mach-Zehnder type logic element which performs an XOR operation
    24.
    发明授权
    Optical Mach-Zehnder type logic element which performs an XOR operation 失效
    执行异或运算的光学马赫 - 曾德尔型逻辑元件

    公开(公告)号：US5315422A

    公开(公告)日：1994-05-24

    申请号：US22016

    申请日：1993-02-24

    申请人： Katsuyuki Utaka ,  Yasuyuki Nagao ,  Yuichi Matsushima ,  Kazuo Sakai

    发明人： Katsuyuki Utaka ,  Yasuyuki Nagao ,  Yuichi Matsushima ,  Kazuo Sakai

    IPC分类号： G02F1/017 ,  G02F1/225 ,  G02F1/35 ,  G02F1/355 ,  G02F3/00 ,  G02B6/10 ,  G02B26/00

    CPC分类号： B82Y20/00 ,  G02F1/3517 ,  G02F3/00 ,  G02F1/017 ,  G02F1/225 ,  G02F1/3556

    摘要： An optical logic element is disclosed which performs an XOR operation through utilization of the high-speed property of light. On each branched waveguide of a Mach-Zehnder interference type optical waveguide there is provided a phase modulating element whose refractive index undergoes a change when it is irradiated by light. The interference type optical waveguide is adapted to provide different optical output levels when the refractive index changes of the phase modulating elements are both zero or a predetermined value and when they differ from each other. Thus, the optical logic element is capable of performing the XOR or XNOR operation at an ultrahigh speed.

    摘要翻译： 公开了一种光逻辑元件，其通过利用光的高速特性来执行异或运算。 在马赫曾德尔干涉型光波导的每个分支波导上，提供了一种相位调制元件，其在被光照射时其折射率发生变化。 干涉型光波导适合于当相位调制元件的折射率变化为零或预定值并且当它们彼此不同时，提供不同的光输出电平。 因此，光逻辑元件能够以超高速执行XOR或XOR运算。

    Optical waveguide switch
    25.
    发明授权
    Optical waveguide switch 失效
    光波导开关

    公开(公告)号：US4805975A

    公开(公告)日：1989-02-21

    申请号：US143820

    申请日：1988-01-13

    申请人： Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

    发明人： Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

    IPC分类号： G02B6/12 ,  G02B6/34 ,  G02F1/31 ,  G02F1/313 ,  G02F1/35 ,  G02F1/29

    CPC分类号： G02B6/29338 ,  G02F1/3515

    摘要： An optical waveguide switch is disclosed in which at least two optical waveguides intersect at a predetermined angle to each other to provide, on both sides of the intersection region, input side optical waveguide regions for receiving incident light and output side optical waveguide regions for outputting guided light, and in which the incident light is input into one of the input side optical waveguide regions and is output from a desired one of the output side optical waveguide regions. In accordance with the present invention, an optically nonlinear material whose refractive index undergoes a substantial variation, depending on the intensity of incident light, is disposed in the intersection region. A loop is provided in association with a corresponding one of the input side optical waveguide regions for essentially branching the guided light in the corresponding waveguide output side optical waveguide region for feedback to the corresponding input side optical waveguide region.

    Optical modulation device
    26.
    发明授权
    Optical modulation device 失效
    光调制装置

    公开(公告)号：US4913506A

    公开(公告)日：1990-04-03

    申请号：US311218

    申请日：1989-02-16

    申请人： Masatoshi Suzuki ,  Shigeyuki Akiba ,  Hideaki Tanaka ,  Katsuyuki Utaka

    发明人： Masatoshi Suzuki ,  Shigeyuki Akiba ,  Hideaki Tanaka ,  Katsuyuki Utaka

    IPC分类号： G02F1/015 ,  G02F1/017 ,  G02F1/025 ,  G02B6/10

    CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F1/025 ,  G02F2001/0157 ,  G02F2202/101 ,  G02F2202/102

    摘要： An optical modulation device is disclosed in which a difference between the photon energy of incident light and the band-gap energy of the modulation waveguide layer is set to a value greater than 50 meV to thereby suppress the degradation of the modulation voltage and the modulation band width which is caused by an increase in the intensity of incident light and in that the optical modulation device is formed in a predetermined length to thereby decrease the modulation voltage. The energy gap of the optical waveguide layer of the optical modulation device is varied continuously or discontinuously in the direction of its thickness to provide a constant absorption coefficient thickwise of the optical waveguide layer so that the electric field intensity distribution in the optical waveguide layer is compensated for, by which overlap of the light distribution and the absorption coefficient is increased so as to decrease the modulation voltage and broaden the modulation band by the reduction of the length of the device. The composition, thickness and stripe width of the optical waveguide layer are changed so that its absorption coefficient increases from the light receiving end face of the optical waveguide layer toward its light emitting end face, thereby making the number of carriers absorbed per unit length substantially constant in the direction of travel of light.

    摘要翻译： 公开了一种光调制装置，其中将入射光的光子能量与调制波导层的带隙能量之间的差设定为大于50meV的值，从而抑制调制电压和调制带的劣化 由入射光强度的增加引起的宽度，并且光调制装置形成为预定长度，从而降低调制电压。 光调制装置的光波导层的能隙在其厚度方向上连续或不连续地变化，以提供光波导层厚度的恒定吸收系数，使得光波导层中的电场强度分布得到补偿 由此，增加了光分布和吸收系数的重叠，从而降低了调制电压，并且通过减小器件的长度来扩大调制频带。 改变光波导层的组成，厚度和条纹宽度，使得其吸收系数从光波导层的光接收端面向其发光端面增加，从而使每单位长度吸收的载流子基本恒定 在光的行进方向。

    Optical modulation element
    27.
    发明授权
    Optical modulation element 失效
    光调制元件

    公开(公告)号：US4946243A

    公开(公告)日：1990-08-07

    申请号：US387511

    申请日：1989-07-28

    申请人： Masatoshi Suzuki ,  Shigeyuki Akiba ,  Hideaki Tanaka ,  Katsuyuki Utaka

    发明人： Masatoshi Suzuki ,  Shigeyuki Akiba ,  Hideaki Tanaka ,  Katsuyuki Utaka

    IPC分类号： G02B6/12 ,  G02F1/015 ,  G02F1/025 ,  H01L31/14 ,  H03C1/34

    CPC分类号： G02F1/025 ,  G02F2001/0157

    摘要： An optical modulation element is disclosed which has, on a substrate directly or through a lower clad layer, an optical waveguide layer of a low impurity concentration, an upper clad layer of a refractive index smaller than that of the optical waveguide layer, and electrodes, and in which light of a constant intensity incident on a light incident end face of the optical waveguide layer is intensity-modulated by changing the absorption coefficient of the optical waveguide layer by means of an electric field applied thereto across the electrodes so that the thus modulated light is emitted from a light emitting end face of the optical waveguide layer. In accordance with the present invention, a plurality of low impurity concentration regions and a plurality of high impurity concentration regions are disposed alternately with each other in contact with at least one of the lower and upper clad layers in the direction of travel of light in such a manner that the distribution density of the plurality of high impurity concentration regions increases in the direction of travel of light.