Nitride semiconductor device
    22.
    发明授权
    Nitride semiconductor device 有权
    氮化物半导体器件

    公开(公告)号:US07825434B2

    公开(公告)日:2010-11-02

    申请号:US11647218

    申请日:2006-12-29

    IPC分类号: H01L29/08

    摘要: A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.

    摘要翻译: 氮化物半导体器件包括:由第一氮化物半导体制成的第一半导体层; 第二半导体层,其形成在第一半导体层的主表面上并且由具有比第一氮化物半导体的带隙宽的第二氮化物半导体构成; 选择性地形成在所述第二半导体层的上部并且由上述第二半导体层的上部制成的具有p型导电性的第三氮化物半导体的控制层; 源极和漏极,形成在控制层的相应侧上的第二半导体层上; 形成在所述控制层上的栅电极; 以及第四半导体层,形成在与所述主表面相对的所述第一半导体层的表面上,相对于所述第一氮化物半导体具有价带中的势垒,并且由包含铝的第四氮化物半导体构成。

    Semiconductor light source and light-emitting device drive circuit
    23.
    发明授权
    Semiconductor light source and light-emitting device drive circuit 有权
    半导体光源和发光装置驱动电路

    公开(公告)号:US07773646B2

    公开(公告)日:2010-08-10

    申请号:US12280603

    申请日:2007-03-14

    IPC分类号: H01S3/00

    CPC分类号: H01S5/042

    摘要: A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.

    摘要翻译: 半导体光源包括具有由氮化物半导体构成的多个半导体层的发光器件101和用于驱动发光器件101的驱动电路102.驱动电路102执行正向驱动操作,其中正向电流 被提供给发光装置以使发光装置101发光,并且对发光装置施加反向偏压的反向驱动操作。 反向偏压的大小受流过发光器件的反向电流的值的限制。

    Semiconductor laser and method for fabricating the same
    25.
    发明授权
    Semiconductor laser and method for fabricating the same 有权
    半导体激光器及其制造方法

    公开(公告)号:US07738525B2

    公开(公告)日:2010-06-15

    申请号:US12065991

    申请日:2007-07-09

    IPC分类号: H01S5/00

    摘要: A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.

    摘要翻译: 半导体激光器(101)包括第一包层(103),有源层(105)和第二覆层(108)。 在激光谐振器的前端面(113)和后端面(114)附近形成有包含氟(即,具有比氮更高的电负性的杂质元素)的窗口区域(115)。 窗口区域115通过将前端面113和后端面114暴露于氟化碳(CF4)等离子体而形成。 布置在窗口区域(115)中的有源层(105)的一部分的有效带隙大于有源层的另一部分的有效带隙,因此,其用作用于抑制 COD。

    SHEET FEEDING DEVICE AND IMAGE FORMING APPARATUS
    26.
    发明申请
    SHEET FEEDING DEVICE AND IMAGE FORMING APPARATUS 有权
    纸张进给装置和图像形成装置

    公开(公告)号:US20090121411A1

    公开(公告)日:2009-05-14

    申请号:US12265126

    申请日:2008-11-05

    IPC分类号: B65H5/22

    摘要: A sheet feeding device, having: a sheet feeding tray which stacks a paper sheet bundle formed by a plurality of sheets; a first blower which blows air to a side edge of the paper sheet bundle stacked on the sheet feeding tray; a second blower which blows air to a leading edge of the paper sheet bundle in a sheet conveyance direction from a forward side of the paper sheet bundle in the sheet conveyance direction; and an adsorption conveyance section which adsorbs a topmost sheet of the paper sheet bundle stacked on the sheet feeding tray and conveys the topmost sheet, wherein a first area in which the adsorption conveyance section is provided, and a second area in which a ventilation port of the first blower is provided, respectively includes an overlapping area in which the first area and the second area overlap on the sheet conveyance direction.

    摘要翻译: 一种送纸装置,具有:由多张纸形成的纸张束堆叠的供纸托盘; 将空气吹送到堆叠在供纸盘上的纸张束的侧边缘的第一鼓风机; 第二鼓风机,其在片材输送方向上从纸张束的前侧沿片材输送方向将空气吹送到纸张束的前端; 以及吸附输送部,其吸收堆叠在供纸托盘上的纸张束的最上面的纸张,并输送最上面的纸张,其中设置有吸附传送部分的第一区域和第二区域,其中通风口 设置第一鼓风机,分别包括第一区域和第二区域在片材输送方向上重叠的重叠区域。

    Resonator and filter using the same
    27.
    发明授权
    Resonator and filter using the same 失效
    谐振器和滤波器使用相同

    公开(公告)号:US07456707B2

    公开(公告)日:2008-11-25

    申请号:US11194460

    申请日:2005-08-02

    IPC分类号: H03H9/54

    摘要: An acoustic resonator includes: a substrate; a resonator film which is supported above the main surface of the substrate and includes a piezoelectric film and a pair of a top electrode and a bottom electrode which are formed on part of the top surface and part of the bottom surface of the piezoelectric film, respectively, to face each other via the piezoelectric film; and a support which is formed on the main surface of the substrate to support the resonator film from below. A resonance cavity is provided in part of a region between the substrate and the resonator film below at least a portion of part of the resonator film where the top electrode and the bottom electrode coincide with each other and an isolation cavity is provided in other part of said region where the support and the resonance cavity do not exist.

    摘要翻译: 声谐振器包括:基板; 一种谐振膜,其被支撑在基板的主表面上方,分别包括压电膜和一对顶电极和底电极,它们分别形成在压电膜的顶表面和底表面的一部分上 通过压电膜相互面对; 以及形成在基板的主表面上以从下方支撑谐振膜的支撑体。 谐振腔被设置在基板和谐振器膜之间的区域的一部分的下方,在谐振膜的至少一部分之上,其中顶部电极和底部电极彼此重合,并且在另一部分中设置隔离腔 所述区域不存在支撑和谐振腔。

    Nitride semiconductor device and method for fabricating the same
    28.
    发明申请
    Nitride semiconductor device and method for fabricating the same 有权
    氮化物半导体器件及其制造方法

    公开(公告)号:US20070205407A1

    公开(公告)日:2007-09-06

    申请号:US11712482

    申请日:2007-03-01

    IPC分类号: H01L29/06

    摘要: A nitride semiconductor device includes a semiconductor stacked structure which is formed of a nitride semiconductor having a first principal surface and a second principal surface opposed to the first principal surface and which includes an active layer. The first principal surface of the semiconductor stacked structure is formed with a plurality of indentations whose plane orientations are the {0001} plane, and the plane orientation of the second principal surface is the {1-101} plane. The active layer is formed along the {1-101} plane.

    摘要翻译: 氮化物半导体器件包括半导体层叠结构,其由具有第一主表面和与第一主表面相对并包括有源层的第二主表面的氮化物半导体形成。 半导体堆叠结构的第一主表面形成有多个平面取向为{0001}面并且第二主面的平面取向为{1-101}面的凹陷。 有源层沿{1-101}面形成。