公开(公告)号：US5557147A

公开(公告)日：1996-09-17

申请号：US230021

申请日：1994-04-19

申请人： Jun Sugiura ,  Osamu Tsuchiya ,  Makoto Ogasawara ,  Fumio Ootsuka ,  Kazuyoshi Torii ,  Isamu Asano ,  Nobuo Owada ,  Mitsuaki Horiuchi ,  Tsuyoshi Tamaru ,  Hideo Aoki ,  Nobuhiro Otsuka ,  Seiichirou Shirai ,  Masakazu Sagawa ,  Yoshihiro Ikeda ,  Masatoshi Tsuneoka ,  Toru Kaga ,  Tomotsugu Shimmyo ,  Hidetsugu Ogishi ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Wakahara ,  Hiroyuki Akimori ,  Sinichi Suzuki ,  Keisuke Funatsu ,  Yoshinao Kawasaki ,  Tunehiko Tubone ,  Takayoshi Kogano ,  Ken Tsugane

发明人： Jun Sugiura ,  Osamu Tsuchiya ,  Makoto Ogasawara ,  Fumio Ootsuka ,  Kazuyoshi Torii ,  Isamu Asano ,  Nobuo Owada ,  Mitsuaki Horiuchi ,  Tsuyoshi Tamaru ,  Hideo Aoki ,  Nobuhiro Otsuka ,  Seiichirou Shirai ,  Masakazu Sagawa ,  Yoshihiro Ikeda ,  Masatoshi Tsuneoka ,  Toru Kaga ,  Tomotsugu Shimmyo ,  Hidetsugu Ogishi ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Wakahara ,  Hiroyuki Akimori ,  Sinichi Suzuki ,  Keisuke Funatsu ,  Yoshinao Kawasaki ,  Tunehiko Tubone ,  Takayoshi Kogano ,  Ken Tsugane

IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L21/02 ,  H01L21/285 ,  H01L21/336 ,  H01L21/76 ,  H01L21/768 ,  H01L21/8238 ,  H01L21/8242 ,  H01L23/29 ,  H01L23/495 ,  H01L23/525 ,  H01L23/532 ,  H01L23/544 ,  H01L27/092 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78 ,  H01L29/68 ,  H01L29/06 ,  H01L29/34

CPC分类号： H01L27/10852 ,  G03F7/70333 ,  G03F9/70 ,  H01L21/28512 ,  H01L21/76 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/823807 ,  H01L23/291 ,  H01L23/4951 ,  H01L23/5258 ,  H01L23/532 ,  H01L23/544 ,  H01L27/0922 ,  H01L28/40 ,  H01L2223/54473 ,  H01L2224/05554 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0928 ,  H01L27/10808 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  Y10S257/90

摘要： Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel stopper regions over the principal surface portions below the element separating insulating film of the substrate by introducing an impurity into all the surface portions including the active regions and the inactive regions of the substrate after the first mask and the second mask have been removed.

公开(公告)号：US20130038198A1

公开(公告)日：2013-02-14

申请号：US13641611

申请日：2011-04-15

申请人： Kazuyoshi Torii ,  Akira Suzuki ,  Mamoru Musasa

发明人： Kazuyoshi Torii ,  Akira Suzuki ,  Mamoru Musasa

IPC分类号： H01T13/39 ,  H01T21/02

CPC分类号： H01T13/39 ,  H01T13/32 ,  H01T21/02

摘要： A spark plug includes a center electrode, a ground electrode, and a noble metal tip. The noble metal tip is joined to an object member of at least one of two electrodes via a fusion zone. A projected overlap region of the noble metal tip and the fusion zone accounts for 70% or more of a projected region of the noble metal tip. The object member contains at least Si out of Al and Si such that the amount of Si is 0.4% by mass or higher and such that the total amount of Al and Si is 0.5% by mass. Multi-fusion spots exist on the surface of the fusion zone. Segments of a baseline which pass through the respective multi-fusion spots have a total length of a predetermined percentage of the length of the baseline. Joining strength to the noble metal tip can thereby be greatly improved when the member to be joined contains Si.

摘要翻译： 火花塞包括中心电极，接地电极和贵金属电极头。 贵金属端头通过熔融区域与两个电极中的至少一个的目标构件接合。 贵金属端头和熔融区域的突出重叠区域占贵金属电极头的投影区域的70％以上。 目标构件至少包含Al和Si中的Si，使得Si的量为0.4质量％以上，并且使Al和Si的总量为0.5质量％。 融合区表面存在多个融合点。 通过相应的多融合点的基线段具有基线长度的预定百分比的总长度。 因此，当待接合部件含有Si时，能够大大提高与贵金属电极头的接合强度。

公开(公告)号：US07969520B2

公开(公告)日：2011-06-28

申请号：US12500639

申请日：2009-07-10

申请人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

发明人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

IPC分类号： G02F1/136

CPC分类号： G02F1/1362 ,  G02F1/133345 ,  G02F2202/02 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/3185 ,  Y10T428/10

摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

摘要翻译： 本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。 抑制和限制由层间绝缘膜增厚引起的开裂的限制膜厚设定为1.5μm以上。

公开(公告)号：US20110025185A1

公开(公告)日：2011-02-03

申请号：US12810767

申请日：2008-12-25

申请人： Kazuyoshi Torii ,  Akira Suzuki ,  Naomichi Miyashita ,  Mamoru Musasa ,  Kenji Moritani

发明人： Kazuyoshi Torii ,  Akira Suzuki ,  Naomichi Miyashita ,  Mamoru Musasa ,  Kenji Moritani

IPC分类号： H01T13/20

CPC分类号： H01T13/39

摘要： A spark member (70) is formed by joining a noble metal member (71) and an intermediate member (75) and is provided in a spark discharge gap between a center electrode and a ground electrode (30). A bottom surface (80) of the intermediate member (75) is resistance-welded to an inner surface (33) of the ground electrode (30), and a weld metal zone (73) is formed in the region of joint therebetween. As viewed on the section of the spark member (70) which contains a centerline (Q), the weld metal zone (73) is reliably formed within the range of the length (D) of a columnar portion (76) as measured along a direction orthogonal to the projecting direction of the spark member (70) and has a length (d) of at least 0.1 times (10% of) the length (D).

摘要翻译： 通过将贵金属构件（71）和中间构件（75）接合而形成火花构件（70），并且设置在中心电极和接地电极（30）之间的火花放电间隙中。 中间构件（75）的底表面（80）被电阻焊接到接地电极（30）的内​​表面（33），并且在它们之间的接合区域中形成焊接金属区域（73）。 如在包含中心线（Q）的火花部件（70）的部分观察的，焊接金属区域（73）可以沿着沿着柱状部分（76）的长度（D）的范围被可靠地形成， 具有与火花部件（70）的突出方向垂直的方向，并且长度（d）为长度（D）的至少0.1倍（10％）。

公开(公告)号：US07839064B2

公开(公告)日：2010-11-23

申请号：US11717638

申请日：2007-03-14

申请人： Kazumasa Yoshida ,  Kazuyoshi Torii ,  Wataru Matsutani

发明人： Kazumasa Yoshida ,  Kazuyoshi Torii ,  Wataru Matsutani

IPC分类号： H01T13/20

CPC分类号： H01T13/36 ,  H01T13/20 ,  H01T13/32 ,  H01T13/39

摘要： A spark plug including: a center electrode as defined herein; a substantially cylindrical insulator as defined herein; a cylindrical metal shell as defined herein; and a ground electrode as defined herein, wherein a spark discharge gap is provided between the leading end portion of the center electrode and the leading end portion of the ground electrode, and the ground electrode has a bulging curved face on a side opposite to a side in which the center electrode is provided, and a maximum of width of the ground electrode within a range of ±1 mm from a center point of the spark discharge gap in the axial direction, as viewed in a direction where the center electrode and the ground electrode overlap, is 105% or less of a width of an ordinary portion having a substantially constant width.

摘要翻译： 一种火花塞，包括：如本文所定义的中心电极; 如本文所定义的基本上圆柱形的绝缘体; 如本文所定义的圆柱形金属壳; 以及如本文所定义的接地电极，其中在中心电极的前端部分和接地电极的前端部分之间设置火花放电间隙，并且接地电极在与侧面相反的一侧具有凸出的曲面 其中设置中心电极，并且从中心电极和地面的方向观察，距离火花放电间隙的轴向中心点±1mm的范围内的接地电极的最大宽度 电极重叠的宽度为宽度基本恒定的普通部分的宽度的105％以下。

公开(公告)号：US20090273751A1

公开(公告)日：2009-11-05

申请号：US12500639

申请日：2009-07-10

申请人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

发明人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

IPC分类号： G02F1/1333 ,  H01L27/12

CPC分类号： G02F1/1362 ,  G02F1/133345 ,  G02F2202/02 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/3185 ,  Y10T428/10

摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

摘要翻译： 本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。 抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

公开(公告)号：US07321187B2

公开(公告)日：2008-01-22

申请号：US11451469

申请日：2006-06-13

申请人： Hideki Teramura ,  Tomoaki Kato ,  Kazuyoshi Torii

发明人： Hideki Teramura ,  Tomoaki Kato ,  Kazuyoshi Torii

IPC分类号： H01T13/20

CPC分类号： H01T13/32 ,  H01T21/02

摘要： A ground-electrode spark portion 32 is formed from a noble metal which contains Pt as a main component, and is joined to a main metal portion of the ground electrode 4 via an alloy layer which has a thickness ranging from 0.5 μm to 100 μm and in which the noble metal that constitutes the ground-electrode spark portion 32 and the metal that constitutes the main metal portion of the ground electrode 4 are alloyed with each other. The ground-electrode spark portion 32 is configured such that a distal end surface 32t facing a spark discharge gap g is smaller in diameter than a bottom surface 32u joined to the ground electrode 4; and the distal end surface 32t is protrusively located beyond the side surface 4s of the ground electrode 4. When the ground-electrode spark portion 32 is viewed in plane from the distal end surface 32t, a portion of the surface of the ground-electrode spark portion 32 is viewed as a peripheral exposed-region surface 32p which is exposed on the side surface 4s of the ground electrode 4 so as to surround the distal end surface 32t.

摘要翻译： 接地电极火花部32由含有Pt作为主要成分的贵金属形成，并且通过厚度为0.5μm〜100μm的合金层与接地电极4的主金属部接合， 其中构成接地电极火花部分32的贵金属和构成接地电极4的主金属部分的金属彼此合金化。 接地电极火花部32构成为，面向火花放电间隙g的前端面32t的直径小于接合于接地电极4的底面32u的直径。 并且远端表面32t突出地位于接地电极4的侧表面4s之外。 当从前端面32t看平面处接地电极火花部32时，接地电极火花部32的一部分表面被看作暴露在侧面的周边露出区域表面32p 接地电极4的表面4s，以围绕远端表面32t。

公开(公告)号：US20070216277A1

公开(公告)日：2007-09-20

申请号：US11717638

申请日：2007-03-14

申请人： Kazumasa Yoshida ,  Kazuyoshi Torii ,  Wataru Matsutani

发明人： Kazumasa Yoshida ,  Kazuyoshi Torii ,  Wataru Matsutani

IPC分类号： H01T13/20

CPC分类号： H01T13/36 ,  H01T13/20 ,  H01T13/32 ,  H01T13/39

摘要： A spark plug including: a center electrode as defined herein; a substantially cylindrical insulator as defined herein; a cylindrical metal shell as defined herein; and a ground electrode as defined herein, wherein a spark discharge gap is provided between the leading end portion of the center electrode and the leading end portion of the ground electrode, and the ground electrode has a bulging curved face on a side opposite to a side in which the center electrode is provided, and a maximum of width of the ground electrode within a range of ±1 mm from a center point of the spark discharge gap in the axial direction, as viewed in a direction where the center electrode and the ground electrode overlap, is 105% or less of a width of an ordinary portion having a substantially constant width.

摘要翻译： 一种火花塞，包括：如本文所定义的中心电极; 如本文所定义的基本上圆柱形的绝缘体; 如本文所定义的圆柱形金属壳; 以及如本文所定义的接地电极，其中在中心电极的前端部分和接地电极的前端部分之间设置火花放电间隙，并且接地电极在与侧面相反的一侧具有凸出的曲面 其中设置中心电极，并且从中心电极和地面的方向观察，距离火花放电间隙的轴向中心点±1mm的范围内的接地电极的最大宽度 电极重叠的宽度为宽度基本恒定的普通部分的宽度的105％以下。

公开(公告)号：US07119407B2

公开(公告)日：2006-10-10

申请号：US10900430

申请日：2004-07-28

申请人： Yasuhiro Shimamoto ,  Katsunori Obata ,  Kazuyoshi Torii ,  Masahiko Hiratani

发明人： Yasuhiro Shimamoto ,  Katsunori Obata ,  Kazuyoshi Torii ,  Masahiko Hiratani

IPC分类号： H01L29/72

CPC分类号： H01L29/4983 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/02337 ,  H01L21/28061 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66545

摘要： In a method for manufacturing an FET having a gate insulation film with an SiO2 equivalent thickness of 2 nm or more and capable of suppressing the leak current to 1/100 or less compared with existent SiO2 films, an SiO2 film of 0.5 nm or more is formed at a boundary between an Si substrate (polycrystalline silicon gate) and a high dielectric insulation film, and the temperature for forming the SiO2 film is made higher than the source-drain activating heat treatment temperature in the subsequent steps. As such, a shifting threshold voltage by the generation of static charges or lowering of a drain current caused by degradation of mobility can be prevented so as to reduce electric power consumption and increase current in a field effect transistor of a smaller size.

摘要翻译： 在具有SiO 2等效厚度为2nm以上的栅极绝缘膜的FET的制造方法中，与现有的SiO 2相比，能够将漏电流抑制到1/100以下， 在Si衬底（多晶硅栅极）和高介电绝缘膜之间的边界处形成0.5nm或更大的SiO 2 SiO 2膜，并且形成 SiO 2膜比后续步骤中的源极 - 漏极活​​化热处理温度高。 因此，可以防止由静电电荷的产生产生的偏移阈值电压或由迁移率降低导致的漏极电流的降低，从而降低较小尺寸的场效应晶体管的电力消耗和增加电流。

公开(公告)号：US06881657B2

公开(公告)日：2005-04-19

申请号：US10889100

申请日：2004-07-13

申请人： Kazuyoshi Torii ,  Riichirou Mitsuhashi ,  Atsushi Horiuchi

发明人： Kazuyoshi Torii ,  Riichirou Mitsuhashi ,  Atsushi Horiuchi

IPC分类号： H01L21/00 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/44

CPC分类号： H01L21/823462 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/3144

摘要： In a method for forming a semiconductor device, the major surface of a substrate is separated into a first element region for forming a first field-effect transistor and a second element region for forming a second field-effect transistor. A silicon nitride film is formed in each of the first and second element regions. Thereafter, the silicon nitride film formed in the second element region is removed, and the substrate is subjected to heat treatment in an ambient that contains nitrogen oxide. Thereby, the silicon nitride film in the first element region is oxidized to form an oxynitride film, and a silicon oxynitride film is formed in the second element region. Thereafter, a high-dielectric-constant film is formed on the silicon oxynitride films in each of the first and second element regions.

摘要翻译： 在形成半导体器件的方法中，将衬底的主表面分离成用于形成第一场效应晶体管的第一元件区域和用于形成第二场效应晶体管的第二元件区域。 在第一和第二元件区域中的每一个中形成氮化硅膜。 此后，除去形成在第二元件区域中的氮化硅膜，并且在包含氮氧化物的环境中对衬底进行热处理。 因此，第一元件区域中的氮化硅膜被氧化以形成氧氮化物膜，并且在第二元件区域中形成氧氮化硅膜。 此后，在第一和第二元件区域中的每一个中的氮氧化硅膜上形成高介电常数膜。