公开(公告)号：US5656098A

公开(公告)日：1997-08-12

申请号：US456403

申请日：1995-06-01

申请人： Nobuyuki Ishikawa ,  Keishi Saito ,  Soichiro Kawakami ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzo Kouda ,  Naoto Okada

发明人： Nobuyuki Ishikawa ,  Keishi Saito ,  Soichiro Kawakami ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yuzo Kouda ,  Naoto Okada

IPC分类号： H01L31/0216 ,  H01L31/048 ,  H01L31/052 ,  H01L31/075 ,  H01L31/04 ,  H01L31/18

CPC分类号： H01L31/073 ,  H01L31/02167 ,  H01L31/048 ,  H01L31/056 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/543 ,  Y02E10/548

摘要： A photovoltaic device has a semiconductor layer; electrodes and a surface protection layer adjacent to the light incident side. Granules of a material different from those of the surface protection layer are disposed in the surface protection layer. The granules in the surface protection layer have an average grain size of 0.001-20 microns, a surface density S from 0.2 to 0.9 and/or a density per volume from 0.001 to 0.5.To produce a surface protecting layer for a photovoltaic device in which the surface protecting layer has granules at a light incident side the surface of a photovoltaic device is painted with a liquid resin containing the granules.

摘要翻译： 光电器件具有半导体层; 电极和与光入射侧相邻的表面保护层。 与表面保护层不同的材料颗粒设置在表面保护层中。 表面保护层中的颗粒的平均粒度为0.001-20微米，表面密度S为0.2至0.9，和/或每体积密度为0.001至0.5。 为了制造其中表面保护层在光入射侧具有颗粒的光伏器件的表面保护层，光伏器件的表面被涂有含有颗粒的液体树脂。

公开(公告)号：US5599403A

公开(公告)日：1997-02-04

申请号：US489372

申请日：1995-06-12

申请人： Toshimitsu Kariya ,  Keishi Saito

发明人： Toshimitsu Kariya ,  Keishi Saito

IPC分类号： H01L27/00 ,  H01L31/036 ,  H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/10 ,  H01L31/105 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0368

CPC分类号： H01L31/076 ,  H01L31/036 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1055 ,  H01L31/1812 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deterioration is reduced, the field durability enhanced, and the temperature characteristic improved, a p-layer composed of amorphous silicon type semiconductor containing hydrogen, an i-layer composed of amorphous silicon-germanium type semiconductor containing hydrogen and further including microcrystalline germanium, and an n-layer composed of amorphous silicon type semiconductor containing hydrogen are laminated on a substrate, the i-layer being formed at a substrate temperature from 400.degree. to 600.degree. C. by microwave plasma CVD, the particle diameter of said microcrystalline germanium ranging from 50 to 500 angstroms. Also, the content of microcrystalline germanium varies in the layer thickness direction.

摘要翻译： 本发明提供光电转换元件，其中提高了长波长灵敏度，填充因子和光电转换效率。 为了提供光劣化降低的光电转换元件，提高了场耐久性，提高了温度特性，由含有氢的非晶硅型半导体构成的p层，由含有氢的非晶硅锗型半导体构成的i层 氢并且还包括微晶锗，并且由含有氢的非晶硅型半导体构成的n层层叠在基板上，所述i层通过微波等离子体CVD在400〜600℃的基板温度下形成， 所述微晶锗的粒径为50-500埃。 此外，微晶锗的含量在层厚度方向上变化。

公开(公告)号：US5849108A

公开(公告)日：1998-12-15

申请号：US638501

申请日：1996-04-26

申请人： Toshimitsu Kariya ,  Keishi Saito

发明人： Toshimitsu Kariya ,  Keishi Saito

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0264 ,  H01L31/036 ,  H01L31/0392

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548

摘要： A photovoltaic element has a substrate with a conductive surface, a zinc oxide layer containing fluorine and a non-single-crystal semiconductor layer, where the fluorine content of the zinc oxide layer (i) varies across the thickness of the layer, (ii) is at a minimum at the interface with the substrate and (iii) increases toward the semiconductor layer.

摘要翻译： 光电元件具有导电表面的衬底，含氟的氧化锌层和非单晶半导体层，其中氧化锌层（i）的氟含量在层的厚度上变化，（ii） 在与衬底的界面处至少是最小的，并且（iii）朝着半导体层增加。

公开(公告)号：US07301215B2

公开(公告)日：2007-11-27

申请号：US11464263

申请日：2006-08-14

申请人： Toshimitsu Kariya

发明人： Toshimitsu Kariya

IPC分类号： H01L31/105

CPC分类号： H01L31/03762 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/03685 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/548

摘要： A photovoltaic device includes at least a first electrode, a first-conductivity-type layer composed of non-single-crystalline silicon, a second-conductivity-type layer composed of polycrystalline silicon, a third-conductivity-type layer composed of non-single-crystalline silicon, and a second electrode, wherein the contact surface of the first electrode with respect to the first-conductivity-type layer has a shape interspersed with a plurality of projections, and the lower limit and the upper limit of the density of the projections interspersed on the surface of the first electrode satisfy the following equations, provided that the thickness of the second-conductivity-type layer is t μm: Lower limit=0.312 exp(−0.60t) pieces/μm2 Upper limit=0.387 exp(−0.39t) pieces/μm2.

摘要翻译： 光伏器件至少包括第一电极，由非单晶硅构成的第一导电型层，由多晶硅构成的第二导电型层，由非单晶硅构成的第三导电型层 晶体硅和第二电极，其中，所述第一电极相对于所述第一导电型层的接触表面具有散布有多个突起的形状，并且所述第一电极的密度的下限和上限 假设第二导电型层的厚度为tumum，散布在第一电极的表面上的突起满足以下等式：<？in-line-formula description =“In-line Formulas”end =“lead” ？>下限= 0.312 exp（-0.60t）件/ mum <2> 在线公式描述=“在线公式”end =“tail”？> <？in-line -formulae description =“In-line Formulas”end =“lead”？>上限= 0.387 exp（-0.39t）pieces / mum <2>

公开(公告)号：US6140570A

公开(公告)日：2000-10-31

申请号：US179834

申请日：1998-10-28

申请人： Toshimitsu Kariya

发明人： Toshimitsu Kariya

IPC分类号： H01L31/0224 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/048 ,  H01L31/052 ,  H01L31/20 ,  H01L31/04

CPC分类号： H01L31/202 ,  H01L31/022466 ,  H01L31/0236 ,  H01L31/03685 ,  H01L31/048 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element having a specific transparent and electrically conductive layer on a back reflecting layer, said transparent and electrically conductive layer comprising a zinc oxide material and having a light incident side surface region with a cross section having a plurality of arcs arranged while in contacted with each other, said arcs having a radius of curvature in the range of 300 .ANG. to 6 .mu.m and an angle of elevation from the center of the curvature in the range of 30 to 155.degree., and said cross section containing regions comprising said plurality of arcs at a proportion of 80% or more, compared to the entire region of the cross section.

摘要翻译： 一种在背反射层上具有特定透明导电层的光电元件，所述透明和导电层包含氧化锌材料，并且具有光入射侧表面区域，其横截面具有多个弧形排列，同时与 彼此相对，所述弧具有范围为300至6微米的曲率半径，并且曲率中心在30至155度的范围内的仰角，并且所述横截面包含区域包括所述多个 与横截面的整个区域相比，弧的比例为80％以上。

公开(公告)号：US5510151A

公开(公告)日：1996-04-23

申请号：US943991

申请日：1992-09-11

申请人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

发明人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

IPC分类号： C23C16/511 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L29/872 ,  H01L31/076 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3277 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/872 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking it up by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting the moving substrate web to form a columnar portion to be the circumferential wall of the film-forming chamber as the substrate is moving from the pay-out mechanism toward the take-up mechanism; introducing a film-forming raw material gas through a gas feeder into the film-forming chamber; and simultaneously, radiating a microwave energy in the film-forming chamber by using a microwave applicator, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate plasma in the film-forming chamber, thereby continuously forming a deposited film on the inner wall face of the continuously moving circumferential wall exposed to the plasma.

摘要翻译： 一种用于连续地形成大面积和长度的功能性沉积膜的微波等离子体CVD方法，所述方法包括：通过用放出机构支付并通过卷取机构将其沿着纵向方向延伸移动， ; 通过弯曲和突出移动的基材卷材来形成基本上封闭的成膜室，以形成作为基板从放出机构朝向卷取机构移动的成膜室的圆周壁的柱状部分; 将成膜原料气体通过气体供给器引入成膜室; 并且同时通过使用微波施加器在成膜室内辐射微波能量，微波施加器被设计成能够沿与微波传播方向平行的方向辐射微波能量，以在成膜室中产生等离子体， 从而在暴露于等离子体的连续移动的周壁的内壁面上连续地形成沉积膜。

公开(公告)号：US07189917B2

公开(公告)日：2007-03-13

申请号：US10801681

申请日：2004-03-17

申请人： Naoto Okada ,  Toshimitsu Kariya

发明人： Naoto Okada ,  Toshimitsu Kariya

IPC分类号： H01L31/00

CPC分类号： H01L31/076 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： To provide a stacked photovoltaic device including: at least one pair of a first photovoltaic device and a second photovoltaic device stacked in order from a light incident side; and a selective reflection layer formed between the at least one pair of the first photovoltaic device and the second photovoltaic device and adapted to electrically connect therebetween, in which the selective reflection layer has a sheet resistance of 100 kΩ/□ or more and 100 MΩ/□ or less.

摘要翻译： 提供堆叠的光伏器件，包括：至少一对第一光伏器件和从光入射侧依次层叠的第二光伏器件; 以及形成在所述至少一对所述第一光电器件和所述第二光电器件之间并且适于在其间电连接的选择反射层，其中所述选择反射层的薄层电阻为100kΩ/□以上且100MΩ/ □以下

公开(公告)号：US06344608B2

公开(公告)日：2002-02-05

申请号：US09340464

申请日：1999-06-28

申请人： Toshimitsu Kariya ,  Masafumi Sano ,  Yutaka Nishio

发明人： Toshimitsu Kariya ,  Masafumi Sano ,  Yutaka Nishio

IPC分类号： H01L310216

CPC分类号： H01L31/076 ,  H01L31/022483 ,  H01L31/075 ,  H01L31/1824 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element comprising a p-type semiconductor layer and a transparent conductive layer comprised of indium tin oxide bonded to each other at a surface is provided. The sum of tin oxide content and tin content of the transparent conductive layer varies in the layer thickness direction and is lowest at the bonding surface of the p-type semiconductor layer and the transparent conductive layer. Thus provided is a photovoltaic element which has a high photoelectric conversion efficiency with decreased reduction even when exposed to an intense light for a long period.

摘要翻译： 提供了包括p型半导体层和由表面上彼此结合的氧化铟锡构成的透明导电层的光电元件。 透明导电层的氧化锡含量和锡含量的总和在层厚度方向上变化，并且在p型半导体层和透明导电层的接合表面处最低。 因此，提供了即使长时间暴露于强光时也具有高的光电转换效率，降低的减少的光电元件。

公开(公告)号：US5130170A

公开(公告)日：1992-07-14

申请号：US543499

申请日：1990-06-26

申请人： Masahiro Kanai ,  Jinsho Matsuyama ,  Katsumi Nakagawa ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Hiroshi Echizen

发明人： Masahiro Kanai ,  Jinsho Matsuyama ,  Katsumi Nakagawa ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Hiroshi Echizen

IPC分类号： C23C16/50 ,  C23C16/54 ,  H01J37/32 ,  H01L31/076 ,  H01L31/20

CPC分类号： H01L31/076 ,  C23C16/50 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3277 ,  H01L31/206 ,  H01J2237/3325 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for continuously forming a large area functional deposited film by a microwave plasma CVD process, said method comprises: continuously moving a substrate web in the longitudinal direction; establishing a substantially enclosed film-forming chamber having a film-forming space by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber; introducing a film-forming raw material gas through a gas feed means into said film-forming space; at the same time, radiating or propagating microwave energy into said film-forming space by using a microwave applicator means capable of radiating or propagating said microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation, to thereby generate plasma in said film-forming space, whereby continuously forming a functional deposited film on the inner face of said continuoulsy moving circumferential wall which is exposed to said plasma.

公开(公告)号：US5520740A

公开(公告)日：1996-05-28

申请号：US459485

申请日：1995-06-02

申请人： Masahiro Kanai ,  Jinsho Matsuyama ,  Katsumi Nakagawa ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Hiroshi Echizen

发明人： Masahiro Kanai ,  Jinsho Matsuyama ,  Katsumi Nakagawa ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Hiroshi Echizen

IPC分类号： C23C16/50 ,  C23C16/54 ,  H01J37/32 ,  H01L31/076 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/50 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3277 ,  H01L31/206 ,  H01J2237/3325 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for continuously forming a large area functional deposited film by a microwave plasma CVD process, said method comprises: continuously moving a substrate web in the longitudinal direction; establishing a substantially enclosed film-forming chamber having a film-forming space by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving; introducing a film-forming raw material gas through a gas feed means into said film-forming space; at the same time, radiating or propagating microwave energy into said film-forming space by using a microwave applicator means capable of radiating or propagating said microwave energy with a directivity in one direction of microwave energy to propagate to generate microwave plasma in said film-forming space, whereby continuously forming a functional deposited film on the inner face of said continuously moving circumferential wall to be exposed to said microwave plasma.An apparatus suitable for practicing said method.

摘要翻译： 一种通过微波等离子体CVD工艺连续地形成大面积功能性沉积膜的方法，所述方法包括：在纵向方向上连续地移动衬底腹板; 通过弯曲和突出所述移动的基材卷材来形成具有成膜空间的基本封闭的膜形成室，以在移动的路上形成作为所述成膜室的周壁的柱状部分; 将成膜原料气体通过气体供给装置引入所述成膜空间中; 同时，通过使用能够以微波能量的一个方向上的方向性辐射或传播所述微波能量的微波施加装置将微波能量辐射或传播到所述成膜空间中以在所述成膜中产生微波等离子体 从而在所述连续移动的周壁的内表面上连续地形成功能沉积膜以暴露于所述微波等离子体。 适用于实施所述方法的装置。