Light emitting element and flat panel display including diamond film
    21.
    发明授权
    Light emitting element and flat panel display including diamond film 失效
    发光元件和平板显示器,包括金刚石膜

    公开(公告)号:US6072275A

    公开(公告)日:2000-06-06

    申请号:US76803

    申请日:1998-05-13

    申请人: Koji Kobashi

    发明人: Koji Kobashi

    摘要: A light emitting element and a flat panel display that includes the element has a diamond film, which can achieve a stable and strong light emission with low electricity consumption. The light emitting element has a multilayer structure with an optional base material, a lower electrode, a diamond film, a fluorescent thin film, an upper electrode, and an upper electrode for wiring purposes. Under a proper biasing voltage between the lower and upper electrodes, carriers (either electrons or holes) are injected from the lower electrode to the diamond film, and are accelerated in the diamond film, so as to excite the fluorescent thin film and cause the thin film to fluoresce.

    摘要翻译: 包括元件的发光元件和平板显示器具有金刚石膜,其能够以低的电力消耗实现稳定和强烈的发光。 发光元件具有可选的基底材料,下部电极,金刚石膜,荧光薄膜,上部电极和用于布线目的的上部电极的多层结构。 在下电极和上电极之间的适当的偏置电压下,载流子(电子或空穴)从下电极注入到金刚石膜,并在金刚石膜中被加速,以激发荧光薄膜并引起薄 电影发出荧光。

    Beam Detector and Beam Monitor Using The Same
    22.
    发明申请
    Beam Detector and Beam Monitor Using The Same 审中-公开
    光束检测器和使用它的光束监视器

    公开(公告)号:US20100219350A1

    公开(公告)日:2010-09-02

    申请号:US12223074

    申请日:2007-02-27

    IPC分类号: G01T1/202 C09K11/65

    摘要: A beam detector and a beam monitor using the same are provided, the beam detector being capable of precisely and stably detecting, for a long period of time, the position, the intensity distribution, and the change with time of radiation beams, soft x-ray beams, and the like and being manufactured at a low cost as compared to that of a conventional detection device.In a beam detector 2 for detecting the position and intensity of beams, a beam irradiation portion 6 to be irradiated with beams 7 is formed of a polycrystalline diamond (C) film 4 containing at least one element (X) selected from the group consisting of silicon (Si), nitrogen (N), lithium (Li), beryllium (Be), boron (B), phosphorus (P), sulfur (S), nickel (Ni), and vanadium (V) at an X/C of 0.1 to 1,000 ppm, and this polycrystalline diamond film 4 has a light emission function of performing light emissions 8 and 8a when it is irradiated with the beams 7. By the beam detector 2 as described above and light emission observation means 3 and 3a for observing the above light emission phenomenon, a beam monitor 1 is formed.

    摘要翻译: 提供了一种使用其的光束检测器和光束监视器,该光束检测器能够长时间精确而稳定地检测位置,强度分布以及辐射束随时间的变化, 射线束等,并且与传统的检测装置相比以低成本制造。 在用于检测光束的位置和强度的光束检测器2中,用光束7照射的光束照射部分6由多晶金刚石(C)膜4形成,该多晶金刚石(C)膜4包含至少一种选自以下的元素(X): 在X / C下,硅(Si),氮(N),锂(Li),铍(Be),硼(B),磷(P),硫(S),镍(Ni)和钒 为0.1〜1000ppm,并且该多晶金刚石膜4具有在用光束7照射时进行发光8和8a的发光功能。通过如上所述的光束检测器2和发光观察装置3和3a, 观察上述发光现象,形成光束监视器1。

    Semiconductor device and method for manufacturing multilayered substrate for semiconductor device
    23.
    发明授权
    Semiconductor device and method for manufacturing multilayered substrate for semiconductor device 有权
    半导体装置用多晶半导体装置及其制造方法

    公开(公告)号:US07285479B2

    公开(公告)日:2007-10-23

    申请号:US11328162

    申请日:2006-01-10

    摘要: A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on one principal surface of a first silicon substrate by a CVD method. A SiO2 layer is formed on this diamond layer. A SiO2 layer is formed on a surface of a second silicon substrate by a thermal oxidation method. The diamond layer is bonded to the second silicon substrate with SiO2 layers disposed on both the diamond layer and the second silicon substrate therebetween. The first silicon substrate is removed by dissolution through etching to expose the surface of the diamond layer. A silicon layer serving as a semiconductor layer is formed on the diamond layer by a CVD method.

    摘要翻译: 提供一种半导体装置用多层基板的制造方法以及半导体装置,该多层基板具有优异的导热性和优异的散热效果,而不发生翘曲变形。 通过CVD方法通过气相沉积在第一硅衬底的一个主表面上形成金刚石层。 在该金刚石层上形成SiO 2层。 通过热氧化法在第二硅衬底的表面上形成SiO 2层。 金刚石层与设置在金刚石层和第二硅衬底之间的SiO 2层结合到第二硅衬底。 通过蚀刻溶解去除第一硅衬底以暴露金刚石层的表面。 通过CVD法在金刚石层上形成用作半导体层的硅层。

    Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film
    24.
    发明申请
    Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film 有权
    高取向金刚石膜,其制造方法以及具有高取向金刚石膜的电子器件

    公开(公告)号:US20060112874A1

    公开(公告)日:2006-06-01

    申请号:US11281607

    申请日:2005-11-18

    摘要: A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C]−[O])/[CH3+H2+O2] is −0.2×10−2 or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750° C. and 1000° C.

    摘要翻译: 具有平坦表面但不具有表面未取向晶体的高取向金刚石薄膜可以通过使用气相色谱法(CVD)在金刚石晶体的{111}扇形生长之后,在基底上沉积第一金刚石层来提供 甲烷和氢气的混合物作为材料气体,然后通过使用甲烷,氢气和氧气的气体混合物的等离子体CVD方法通过{100}金刚石晶体的扇形生长在第一金刚石层上沉积第二金刚石层作为原料气体 材料气体压力为133hPa以上的条件; 确定材料气体组成使得([C] - [O])/ [CH 3/3 + H 2 + O 2]是 -0.2×10 -2以上,[O] / [C]为1.2以下。 并且衬底温度在750℃和1000℃之间。

    Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film
    25.
    发明授权
    Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film 有权
    高取向金刚石膜,其制造方法以及具有高取向金刚石膜的电子器件

    公开(公告)号:US07311977B2

    公开(公告)日:2007-12-25

    申请号:US11281607

    申请日:2005-11-18

    IPC分类号: B32B9/04 B32B13/04

    摘要: A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C]−[O])/[CH3+H2+O2] is −0.2×10−2 or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750° C. and 1000° C.

    摘要翻译: 具有平坦表面但不具有表面未取向晶体的高取向金刚石薄膜可以通过使用气相色谱法(CVD)在金刚石晶体的{111}扇形生长之后,在基底上沉积第一金刚石层来提供 甲烷和氢气的混合物作为材料气体,然后通过使用甲烷,氢气和氧气的气体混合物的等离子体CVD方法通过{100}金刚石晶体的扇形生长在第一金刚石层上沉积第二金刚石层作为原料气体 材料气体压力为133hPa以上的条件; 确定材料气体组成使得([C] - [O])/ [CH 3/3 + H 2 + O 2]是 -0.2×10 -2以上,[O] / [C]为1.2以下。 并且衬底温度在750℃和1000℃之间。

    Diamond electrode
    26.
    发明授权
    Diamond electrode 失效
    金刚石电极

    公开(公告)号:US5776323A

    公开(公告)日:1998-07-07

    申请号:US668358

    申请日:1996-06-26

    申请人: Koji Kobashi

    发明人: Koji Kobashi

    摘要: The present invention is a diamond electrode with high efficiency, a small overvoltage, and a long lifetime, which is reusable, and which can measure the temperature of the electrode. The diamond electrode is at least partially composed of a semiconducting diamond film, whose surface is chemically modified. Another embodiment of the present invention carbon is used as a bare electrode material, diamond crystals are fixed to the bare electrode material, the surface of the undoped diamond crystals are covered with semiconducting diamond film, or semiconducting diamond crystals are fixed to said bare electrode material, and the surfaces of diamond films or crystals are chemically modified. Furthermore, wires may be connected to the diamond electrode to measure the electrical resistance, and hence the temperature.

    摘要翻译: 本发明是高效率,小的过电压和长寿命的金刚石电极,其可重复使用,并且可以测量电极的温度。 金刚石电极至少部分地由半导体金刚石膜组成,其表面被化学改性。 本发明碳的另一实施例用作裸电极材料,将金刚石晶体固定在裸电极材料上,未掺杂的金刚石晶体的表面被半导体金刚石膜覆盖,或者将半导体金刚石晶体固定到所述裸电极材料 并且金刚石膜或晶体的表面被化学改性。 此外,电线可以连接到金刚石电极以测量电阻,因此测量温度。

    Magnetic sensor element using highly-oriented diamond film and magnetic
detector
    27.
    发明授权
    Magnetic sensor element using highly-oriented diamond film and magnetic detector 失效
    磁性传感元件采用高取向金刚石膜和磁性探测器

    公开(公告)号:US5424561A

    公开(公告)日:1995-06-13

    申请号:US305791

    申请日:1994-09-08

    CPC分类号: H01L43/065

    摘要: A magnetic sensor element using highly-oriented diamond film comprises a magnetic detecting part, at least a pair of main current electrodes for flowing a main current and generating the Hall electromotive force at the magnetic detecting part, and detection electrodes for detecting said Hall electromotive force. Said magnetic detecting part is formed of a highly-oriented diamond film grown by chemical vapor deposition, at least 90% of which consists of either (100) or (111) crystal planes. Between the adjacent crystal planes, the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} which represent the orientation of the crystal planes, satisfy the following relations simultaneously: .vertline..DELTA..alpha..vertline..ltoreq.10.degree., .vertline..DELTA..beta..vertline..ltoreq.10.degree. and .vertline..DELTA..gamma..vertline..ltoreq.10 .degree.. The magnetic sensor element using highly-oriented diamond film has a high heat stability and sufficiently high level of magnetic field sensitivity to be used practically, enabling to expand the surface area and to increase the integration of the element and to measure magnetic field over a wide area and a large space.

    摘要翻译: 使用高取向金刚石膜的磁传感器元件包括磁检测部,至少一对主电流电极,用于使主电流流动并在磁检测部产生霍尔电动势,以及检测电极,用于检测所述霍尔电动势 。 所述磁检测部分由化学气相沉积生长的高取向金刚石膜形成,其中至少90%由(100)或(111)晶面构成。 在相邻的晶面之间,表示晶面取向的欧拉角{α,β,γ}的差异{DELTA alpha,DELTAβ,DELTA gamma}同时满足以下关系: DELTA alpha |

    Method for microfabricating diamond
    28.
    发明授权
    Method for microfabricating diamond 失效
    金刚石微加工方法

    公开(公告)号:US5888846A

    公开(公告)日:1999-03-30

    申请号:US86561

    申请日:1998-05-29

    CPC分类号: H01L21/042

    摘要: A method for microfabricating diamond includes the steps of: forming a resist layer composed of a ladder silicone spin-on glass material on the surface of diamond; performing lithography, in which the resist layer is irradiated with an electron beam or an ion beam in a given pattern; developing the resist layer to form the given pattern; and etching diamond by an ECR plasma etching method or a high-frequency plasma etching method.

    摘要翻译: 金刚石微制造方法包括以下步骤:在金刚石的表面上形成由硅胶旋涂玻璃材料构成的抗蚀剂层; 其中以给定图案用电子束或离子束照射抗蚀剂层; 显影抗蚀剂层以形成给定的图案; 并通过ECR等离子体蚀刻方法或高频等离子体蚀刻方法蚀刻金刚石。

    Diamond film biosensor
    29.
    发明授权
    Diamond film biosensor 失效
    金刚石膜生物传感器

    公开(公告)号:US5777372A

    公开(公告)日:1998-07-07

    申请号:US609613

    申请日:1996-03-01

    申请人: Koji Kobashi

    发明人: Koji Kobashi

    摘要: A diamond film biosensor has a transducer that is partially or totally composed of semiconducting diamond film and/or undoped diamond film. A bioidentifier is fixed partly or entirely on the surface of said semiconducting diamond film and/or undoped diamond film. The peripheral circuits are partly or entirely composed of undoped diamond film and/or semiconducting diamond film. The diamond film biosensor can detect chemical substances and biosubstances with a high sensitivity and fast response, has a long lifetime, and is reusable.

    摘要翻译: 金刚石膜生物传感器具有部分或全部由半导体金刚石膜和/或未掺杂金刚石膜构成的换能器。 生物识别器部分或全部固定在所述半导体金刚石膜和/或未掺杂的金刚石膜的表面上。 外围电路部分或全部由未掺杂的金刚石膜和/或半导体金刚石膜组成。 金刚石膜生物传感器可以灵敏度高,反应快,能够检测化学物质和生物体,寿命长,可重复使用。

    Surface acoustic wave device using highly oriented diamond film
    30.
    发明授权
    Surface acoustic wave device using highly oriented diamond film 失效
    表面声波装置采用高取向金刚石薄膜

    公开(公告)号:US5402029A

    公开(公告)日:1995-03-28

    申请号:US239132

    申请日:1994-05-06

    CPC分类号: H03H9/02582

    摘要: A surface acoustic wave device uses a highly oriented diamond film with a planar surface, increasing the propagating velocity of a surface acoustic wave, and fabricating many devices on a large area without polishing processes. The surface acoustic wave device includes the highly oriented diamond films, a piezoelectric film and electrodes which are formed on the diamond film. In the highly oriented diamond film, 80% or more of the surface area of the diamond film is composed of the (100) faces or (111) faces of diamond; and the difference {.DELTA..alpha.,.DELTA..beta.,.DELTA..gamma.} between the Euler angles {.alpha.,.beta.,.gamma.} expressing the crystal orientations of the adjacent (100) or (111) faces of the diamond film simultaneously satisfies the relations of .vertline..DELTA..alpha..vertline..ltoreq.10.degree., .vertline..DELTA..beta..vertline..ltoreq.10.degree., and .vertline..DELTA..gamma..vertline..ltoreq.10.degree..

    摘要翻译: 表面声波装置使用具有平坦表面的高取向金刚石膜,增加表面声波的传播速度,并且在大面积上制造许多器件而不进行抛光工艺。 表面声波装置包括高取向金刚石膜,压电膜和形成在金刚石膜上的电极。 在高取向金刚石膜中,金刚石膜的表面积的80%以上由金刚石的(100)面或(111)面构成; 并且表示金刚石膜的相邻(100)或(111)面的晶体取向的欧拉角{α,β,γ}之间的差异{DELTAα,DELTAβ,DELTAγ}同时满足| DELTA alpha |