公开(公告)号：US5402029A

公开(公告)日：1995-03-28

申请号：US239132

申请日：1994-05-06

申请人： Rie Nakamura ,  Koji Kobashi

发明人： Rie Nakamura ,  Koji Kobashi

IPC分类号： H03H9/145 ,  H03H9/02 ,  H03H9/05 ,  H01L41/08

CPC分类号： H03H9/02582

摘要： A surface acoustic wave device uses a highly oriented diamond film with a planar surface, increasing the propagating velocity of a surface acoustic wave, and fabricating many devices on a large area without polishing processes. The surface acoustic wave device includes the highly oriented diamond films, a piezoelectric film and electrodes which are formed on the diamond film. In the highly oriented diamond film, 80% or more of the surface area of the diamond film is composed of the (100) faces or (111) faces of diamond; and the difference {.DELTA..alpha.,.DELTA..beta.,.DELTA..gamma.} between the Euler angles {.alpha.,.beta.,.gamma.} expressing the crystal orientations of the adjacent (100) or (111) faces of the diamond film simultaneously satisfies the relations of .vertline..DELTA..alpha..vertline..ltoreq.10.degree., .vertline..DELTA..beta..vertline..ltoreq.10.degree., and .vertline..DELTA..gamma..vertline..ltoreq.10.degree..

摘要翻译： 表面声波装置使用具有平坦表面的高取向金刚石膜，增加表面声波的传播速度，并且在大面积上制造许多器件而不进行抛光工艺。 表面声波装置包括高取向金刚石膜，压电膜和形成在金刚石膜上的电极。 在高取向金刚石膜中，金刚石膜的表面积的80％以上由金刚石的（100）面或（111）面构成; 并且表示金刚石膜的相邻（100）或（111）面的晶体取向的欧拉角{α，β，γ}之间的差异{DELTAα，DELTAβ，DELTAγ}同时满足| DELTA alpha |

公开(公告)号：US07067903B2

公开(公告)日：2006-06-27

申请号：US10701499

申请日：2003-11-06

申请人： Takeshi Tachibana ,  Kazushi Hayashi ,  Kenichi Inoue ,  Yoshihiro Yokota ,  Koji Kobashi ,  Nobuyuki Kawakami ,  Takashi Kobori

发明人： Takeshi Tachibana ,  Kazushi Hayashi ,  Kenichi Inoue ,  Yoshihiro Yokota ,  Koji Kobashi ,  Nobuyuki Kawakami ,  Takashi Kobori

IPC分类号： H01L29/06 ,  H01L23/495 ,  H01L23/06 ,  H01L23/10

CPC分类号： H01L23/3732 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.

摘要翻译： 半导体器件和封装具有直接设置在半导体器件的反面上的散热器。 该散热器包括金刚石层或含有金刚石和陶瓷的层，例如碳化硅和氮化铝。 散热器直接形成在用于半导体器件的衬底上。 特别地，散热器由金刚石层和一个或两个金属或陶瓷构件组成，其通过一个或两个聚合物粘合剂层结合到金刚石层。 该金刚石层具有穿过厚度或微晶结构的纤维结构。 在金刚石层的面向一个或两个金属或陶瓷构件的表面上形成纤毛。

公开(公告)号：US6080378A

公开(公告)日：2000-06-27

申请号：US924701

申请日：1997-09-05

申请人： Yoshihiro Yokota ,  Takeshi Tachibana ,  Koichi Miyata ,  Koji Kobashi

发明人： Yoshihiro Yokota ,  Takeshi Tachibana ,  Koichi Miyata ,  Koji Kobashi

IPC分类号： C30B29/04 ,  C23C16/27 ,  C30B25/10

CPC分类号： C23C16/274 ,  C23C16/278 ,  C30B25/105

摘要： Diamond films and novel method to grow the diamond films can improve the performance of products utilizing diamond films. In the cathodoluminescence taken at room temperature, the integrated intensity ratio of the diamond films, CL.sub.1 /CL.sub.2, is equal or greater than 1/20, where CL.sub.1 is the integrated intensity of the emission band in the wavelength region shorter than 300 nm while CL.sub.2 is the integrated intensity of the emission band in the wavelength region from 300 nm to 800 nm. Such high quality diamond films with intensive coalescence on the surface can be obtained by deposition on the substrates or films, made of at least one member selected from the group consisting of platinum, platinum alloys, iridium, iridium alloys, nickel, nickel alloys, silicon, and metal silicides.

摘要翻译： 金刚石薄膜和金刚石薄膜生长的新方法可以改善利用金刚石薄膜的产品的性能。 在室温下的阴极发光中，金刚石膜CL1 / CL2的积分强度比等于或大于1/20，其中CL1是短于300nm的波长区域中的发射带的积分强度，而CL2 是从300nm到800nm的波长区域的发射带的积分强度。 通过沉积在由铂，铂合金，铱，铱合金，镍，镍合金，硅中的至少一种构成的基板或膜上，可以获得在表面上具有强烈聚结的这种高品质金刚石膜 ，和金属硅化物。

公开(公告)号：US6072275A

公开(公告)日：2000-06-06

申请号：US76803

申请日：1998-05-13

申请人： Koji Kobashi

发明人： Koji Kobashi

IPC分类号： H05B33/22 ,  H05B33/12 ,  H05B33/26 ,  H01J63/04

CPC分类号： H01J63/06 ,  H01J1/3044 ,  H01J31/127 ,  H01J2329/0481

摘要： A light emitting element and a flat panel display that includes the element has a diamond film, which can achieve a stable and strong light emission with low electricity consumption. The light emitting element has a multilayer structure with an optional base material, a lower electrode, a diamond film, a fluorescent thin film, an upper electrode, and an upper electrode for wiring purposes. Under a proper biasing voltage between the lower and upper electrodes, carriers (either electrons or holes) are injected from the lower electrode to the diamond film, and are accelerated in the diamond film, so as to excite the fluorescent thin film and cause the thin film to fluoresce.

摘要翻译： 包括元件的发光元件和平板显示器具有金刚石膜，其能够以低的电力消耗实现稳定和强烈的发光。 发光元件具有可选的基底材料，下部电极，金刚石膜，荧光薄膜，上部电极和用于布线目的的上部电极的多层结构。 在下电极和上电极之间的适当的偏置电压下，载流子（电子或空穴）从下电极注入到金刚石膜，并在金刚石膜中被加速，以激发荧光薄膜并引起薄 电影发出荧光。

公开(公告)号：US5869390A

公开(公告)日：1999-02-09

申请号：US871552

申请日：1997-06-09

申请人： Kozo Nishimura ,  Koji Kobashi ,  Shigeaki Miyauchi ,  Rie Kato ,  Hisashi Koyama ,  Kimitsugu Saito

发明人： Kozo Nishimura ,  Koji Kobashi ,  Shigeaki Miyauchi ,  Rie Kato ,  Hisashi Koyama ,  Kimitsugu Saito

IPC分类号： H01L21/28 ,  H01L21/04 ,  H01L23/14 ,  H01L23/373 ,  H01L21/44 ,  H01L21/00

CPC分类号： H01L21/0435 ,  H01L21/043 ,  H01L23/3732 ,  H01L2924/0002 ,  Y10S148/10 ,  Y10S148/148

摘要： Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.

摘要翻译： 公开了一种在金刚石上形成电极的方法，包括以下步骤：在金刚石或金刚石膜上形成掩模图案; 通过惰性气体的等离子体处理金刚石表面; 在试样的整个表面上形成电极膜; 并除去掩模，从而形成电极的指定图案。 通过该方法，可以形成对于电子器件的金刚石和金刚石膜具有高粘附性的电极。

公开(公告)号：US5373172A

公开(公告)日：1994-12-13

申请号：US544

申请日：1993-01-04

申请人： Koji Kobashi ,  Koichi Miyata ,  Kazuo Kumagai ,  Shigeaki Miyauchi ,  Yuichi Matsui

发明人： Koji Kobashi ,  Koichi Miyata ,  Kazuo Kumagai ,  Shigeaki Miyauchi ,  Yuichi Matsui

IPC分类号： C09K11/65 ,  H01B1/04 ,  H01L21/205 ,  H01L33/00 ,  H01L33/34 ,  H01L33/40 ,  H01L29/161 ,  H01L23/48 ,  H01L29/205

CPC分类号： H01L33/34 ,  C09K11/65 ,  H01B1/04 ,  H01L33/0033 ,  H01L33/0037 ,  H01L33/0054 ,  Y02B20/181

摘要： A semiconducting diamond electroluminescence element comprises an electrically conductive substrate, a semiconducting diamond layer formed on the substrate, an insulating diamond layer formed on the semiconducting diamond layer, a front electrode formed on the insulating diamond layer, and a back electrode formed on the conductive substrate in ohmic contact with the same. The color of light to be emitted by the semiconducting diamond electroluminescence element can readily be determined by changing the impurity content in the semiconducting diamond layer. The luminescence intensity of the semiconducting diamond electroluminescence element can readily be changed by changing the voltage applied across the front and back electrodes without entailing dielectric breakdown.

摘要翻译： 半导体金刚石电致发光元件包括导电衬底，在衬底上形成的半导体金刚石层，形成在半导体金刚石层上的绝缘金刚石层，形成在绝缘金刚石层上的前电极和形成在导电衬底上的背电极 与欧姆接触相同。 由半导体金刚石电致发光元件发射的光的颜色可以通过改变半导体金刚石层中的杂质含量来容易地确定。 半导体金刚石电致发光元件的发光强度可以通过改变施加在前电极和后电极上的电压而容易地改变，而不会导致电介质击穿。

公开(公告)号：US4940015A

公开(公告)日：1990-07-10

申请号：US379586

申请日：1989-07-13

申请人： Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshio Kawate ,  Kazuo Kumagai ,  Norio Suzuki ,  Yutaka Kawata ,  Kiyotaka Ishibashi

发明人： Koji Kobashi ,  Kozo Nishimura ,  Koichi Miyata ,  Yoshio Kawate ,  Kazuo Kumagai ,  Norio Suzuki ,  Yutaka Kawata ,  Kiyotaka Ishibashi

IPC分类号： C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C23C16/511 ,  C30B25/10 ,  C30B29/04 ,  H01J37/32

CPC分类号： C23C16/274 ,  C23C16/26 ,  C23C16/277 ,  C23C16/511 ,  C30B25/105 ,  H01J37/32192 ,  H01J37/32284 ,  H01J37/32733 ,  H01J2237/339

摘要： A plasma reactor for diamond synthesis includes a microwave generator, a waveguide connected to the microwave generator, an antenna disposed within the waveguide to direct the microwaves propagated along the waveguide toward the interior of a reaction chamber, a microwave window provided above the upper wall of the waveguide, a reaction chamber defined by (a) a cylindrical bottom member hermetically joined to the microwave window and the waveguide, (b) a reaction gas inlet port and a gas outlet port in the side wall thereof, and (c) a substrate holder disposed within the reaction chamber in facing opposition to the microwave window so as to be moved toward and away from the microwave window to adjust the distance between the microwave window and the substrate holder to generate a desired microwave resonance mode. A plasma is produced only in the central portion of the reaction chamber, so that the etching of the microwave window and the resulting contamination of the diamond film by impurities produced by etching the microwave window are prevented. The plasma reactor for diamond synthesis is capable of forming a high-quality diamond film on a large surface of a substrate at a high growth rate in a range of 1 to 2 .mu.m/hr.

摘要翻译： 用于金刚石合成的等离子体反应器包括微波发生器，连接到微波发生器的波导，设置在波导内的天线，以将沿波导传播的微波导向反应室的内部，设置在反应室的上壁上方的微波窗口 波导，由（a）气密地接合到微波窗口和波导的圆柱形底部构件限定的反应室，（b）侧壁中的反应气体入口和气体出口，以及（c）基板 保持器设置在与微波窗口相对的反应室内，以便朝向和远离微波窗口移动，以调节微波窗口和衬底保持器之间的距离以产生所需的微波谐振模式。 仅在反应室的中心部分产生等离子体，从而防止了通过蚀刻微波窗口产生的杂质对微波窗口的蚀刻和金刚石膜的污染。 用于金刚石合成的等离子体反应器能够以1至2μm/ hr的高生长速率在基板的大表面上形成高质量的金刚石膜。

公开(公告)号：US20100219350A1

公开(公告)日：2010-09-02

申请号：US12223074

申请日：2007-02-27

申请人： Koji Kobashi ,  Takeshi Tachibana ,  Yoshihiro Yokota ,  Kazushi Hayashi

发明人： Koji Kobashi ,  Takeshi Tachibana ,  Yoshihiro Yokota ,  Kazushi Hayashi

IPC分类号： G01T1/202 ,  C09K11/65

CPC分类号： G01T1/29 ,  C23C16/0254 ,  C23C16/274 ,  C23C16/277

摘要： A beam detector and a beam monitor using the same are provided, the beam detector being capable of precisely and stably detecting, for a long period of time, the position, the intensity distribution, and the change with time of radiation beams, soft x-ray beams, and the like and being manufactured at a low cost as compared to that of a conventional detection device.In a beam detector 2 for detecting the position and intensity of beams, a beam irradiation portion 6 to be irradiated with beams 7 is formed of a polycrystalline diamond (C) film 4 containing at least one element (X) selected from the group consisting of silicon (Si), nitrogen (N), lithium (Li), beryllium (Be), boron (B), phosphorus (P), sulfur (S), nickel (Ni), and vanadium (V) at an X/C of 0.1 to 1,000 ppm, and this polycrystalline diamond film 4 has a light emission function of performing light emissions 8 and 8a when it is irradiated with the beams 7. By the beam detector 2 as described above and light emission observation means 3 and 3a for observing the above light emission phenomenon, a beam monitor 1 is formed.

摘要翻译： 提供了一种使用其的光束检测器和光束监视器，该光束检测器能够长时间精确而稳定地检测位置，强度分布以及辐射束随时间的变化， 射线束等，并且与传统的检测装置相比以低成本制造。 在用于检测光束的位置和强度的光束检测器2中，用光束7照射的光束照射部分6由多晶金刚石（C）膜4形成，该多晶金刚石（C）膜4包含至少一种选自以下的元素（X）： 在X / C下，硅（Si），氮（N），锂（Li），铍（Be），硼（B），磷（P），硫（S），镍（Ni）和钒 为0.1〜1000ppm，并且该多晶金刚石膜4具有在用光束7照射时进行发光8和8a的发光功能。通过如上所述的光束检测器2和发光观察装置3和3a， 观察上述发光现象，形成光束监视器1。

公开(公告)号：US07285479B2

公开(公告)日：2007-10-23

申请号：US11328162

申请日：2006-01-10

申请人： Takeshi Tachibana ,  Kazushi Hayashi ,  Yoshihiro Yokota ,  Koji Kobashi ,  Takashi Kobori

发明人： Takeshi Tachibana ,  Kazushi Hayashi ,  Yoshihiro Yokota ,  Koji Kobashi ,  Takashi Kobori

IPC分类号： H01L21/78 ,  H01L21/301 ,  H01L21/46

CPC分类号： H01L21/022 ,  C23C16/01 ,  C23C16/274 ,  C23C16/278 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02123 ,  H01L21/0405 ,  H01L21/3146 ,  H01L21/76256 ,  H01L2221/68363

摘要： A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on one principal surface of a first silicon substrate by a CVD method. A SiO2 layer is formed on this diamond layer. A SiO2 layer is formed on a surface of a second silicon substrate by a thermal oxidation method. The diamond layer is bonded to the second silicon substrate with SiO2 layers disposed on both the diamond layer and the second silicon substrate therebetween. The first silicon substrate is removed by dissolution through etching to expose the surface of the diamond layer. A silicon layer serving as a semiconductor layer is formed on the diamond layer by a CVD method.

摘要翻译： 提供一种半导体装置用多层基板的制造方法以及半导体装置，该多层基板具有优异的导热性和优异的散热效果，而不发生翘曲变形。 通过CVD方法通过气相沉积在第一硅衬底的一个主表面上形成金刚石层。 在该金刚石层上形成SiO 2层。 通过热氧化法在第二硅衬底的表面上形成SiO 2层。 金刚石层与设置在金刚石层和第二硅衬底之间的SiO 2层结合到第二硅衬底。 通过蚀刻溶解去除第一硅衬底以暴露金刚石层的表面。 通过CVD法在金刚石层上形成用作半导体层的硅层。

公开(公告)号：US20060112874A1

公开(公告)日：2006-06-01

申请号：US11281607

申请日：2005-11-18

申请人： Yoshihiro Yokota ,  Kazushi Hayashi ,  Takeshi Tachibana ,  Koji Kobashi

发明人： Yoshihiro Yokota ,  Kazushi Hayashi ,  Takeshi Tachibana ,  Koji Kobashi

IPC分类号： C30B25/00 ,  C30B23/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/04 ,  C23C16/0272 ,  C23C16/274 ,  C23C16/277 ,  C23C16/279 ,  C30B25/105 ,  H01L29/045 ,  H01L29/1602 ,  Y10T428/30

摘要： A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C]−[O])/[CH3+H2+O2] is −0.2×10−2 or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750° C. and 1000° C.

摘要翻译： 具有平坦表面但不具有表面未取向晶体的高取向金刚石薄膜可以通过使用气相色谱法（CVD）在金刚石晶体的{111}扇形生长之后，在基底上沉积第一金刚石层来提供 甲烷和氢气的混合物作为材料气体，然后通过使用甲烷，氢气和氧气的气体混合物的等离子体CVD方法通过{100}金刚石晶体的扇形生长在第一金刚石层上沉积第二金刚石层作为原料气体 材料气体压力为133hPa以上的条件; 确定材料气体组成使得（[C] - [O]）/ [CH 3/3 + H 2 + O 2]是 -0.2×10 -2以上，[O] / [C]为1.2以下。 并且衬底温度在750℃和1000℃之间。