公开(公告)号：US20140047705A1

公开(公告)日：2014-02-20

申请号：US14062216

申请日：2013-10-24

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H05B3/00

CPC classification number: H01L21/67103 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/3342 ,  H01J2237/3343 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H05B1/0233 ,  H05B3/00 ,  H05B3/26 ,  Y10T29/49083 ,  Y10T29/49099

Abstract: An exemplary method for manufacturing a heating plate for a substrate support assembly includes forming holes in at least one sheet, printing a slurry of conductor powder, or pressing a precut metal foil, or spraying a slurry of conductor powder, on the at least one sheet to form the planar heater zones, the power supply lines, and power return lines. The holes in the at least one sheet are filled with a slurry of conductor powder to form power supply and power return vias. The sheets are then aligned, pressed, and bonded to form the heating plate.

Abstract translation: 用于制造用于基板支撑组件的加热板的示例性方法包括在至少一个片材中形成孔，在导体粉末的浆料上印刷，或者将预切割金属箔压制，或者将导体粉末的浆料喷涂在至少一个片材上 以形成平面加热器区域，电源线和电力返回线。 至少一个片材中的孔填充有导体粉末的浆料，以形成电源和电源返回通孔。 然后将片材对准，压制和结合以形成加热板。

公开(公告)号：US20140034608A1

公开(公告)日：2014-02-06

申请号：US13965719

申请日：2013-08-13

Applicant: Lam Research Corporation

Inventor： Neil Benjamin ,  Robert J. Steger

IPC: H01J37/20

CPC classification number: H01J37/20 ,  H01J2237/2001 ,  H01L21/67103 ,  H01L21/67248

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently.

Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座的温度低于工件所需的温度。 热绝缘体设置在温度控制的基座上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或设置在平坦支撑件的下侧上。 加热器包括多个加热元件，其加热多个相应的加热区。 每个加热元件的供电功率和/或温度都是独立控制的。

公开(公告)号：US10770363B2

公开(公告)日：2020-09-08

申请号：US16056967

申请日：2018-08-07

Applicant: Lam Research Corporation

Inventor： Keith William Gaff ,  Tom Anderson ,  Keith Comendant ,  Ralph Jan-Pin Lu ,  Paul Robertson ,  Eric A. Pape ,  Neil Benjamin

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/683

Abstract: A semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a heater array comprising thermal control elements operable to tune a spatial temperature profile on the semiconductor substrate, the thermal control elements defining heater zones each of which is powered by two or more power supply lines and two or more power return lines wherein each power supply line is connected to at least two of the heater zones and each power return line is connected to at least two of the heater zones. A power distribution circuit is mated to a baseplate of the substrate support, the power distribution circuit being connected to each power supply line and power return line of the heater array. A switching device is connected to the power distribution circuit to independently provide time-averaged power to each of the heater zones by time divisional multiplexing of a plurality of switches.

公开(公告)号：US10403475B2

公开(公告)日：2019-09-03

申请号：US14703066

申请日：2015-05-04

Applicant: Lam Research Corporation

Inventor： David J. Cooperberg ,  Vahid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

IPC: C23C16/00 ,  H01L21/326 ,  H01J37/32 ,  C23C16/455 ,  C23C16/507 ,  H01L21/311 ,  H01L21/3213

Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

公开(公告)号：US10236193B2

公开(公告)日：2019-03-19

申请号：US15497992

申请日：2017-04-26

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H05B1/02 ,  H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  C23C4/10 ,  C23C4/134 ,  C23C14/50 ,  C23C14/54 ,  C23C14/34 ,  C23C14/10 ,  C23C16/40 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509

Abstract: A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.

公开(公告)号：US09824904B2

公开(公告)日：2017-11-21

申请号：US14594648

申请日：2015-01-12

Applicant: Lam Research Corporation

Inventor： Neil Benjamin ,  Robert Steger

IPC: H05B3/68 ,  C23C16/00 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/67248 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68714

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.

公开(公告)号：US20150235811A1

公开(公告)日：2015-08-20

申请号：US14703066

申请日：2015-05-04

Applicant: Lam Research Corporation

Inventor： David J. Cooperberg ,  Vahid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01J37/32449 ,  C23C16/45574 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/3323 ,  H01J2237/3344 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

Abstract translation: 一种用于等离子体处理系统的可调多区域注入系统，用于诸如半导体晶片的衬底的等离子体处理。 喷射器可以包括轴向出口，其以第一流量向中心区域供应处理气体，并且离轴出口以相同的处理气体以第二流量供应到围绕中心区域的环形区域。 该装置允许气体输送的修改以通过允许独立调节气体流到腔室中的多个区域来满足特定处理状态的需要。 此外，与消耗式喷头装置相比，可以更容易且经济地更换可移除安装的气体喷射器。