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    LIGHT EMITTING DIODE PACKAGE
    21.
    发明申请
    LIGHT EMITTING DIODE PACKAGE 有权

    公开(公告)号：US20210111313A1

    公开(公告)日：2021-04-15

    申请号：US16600577

    申请日：2019-10-14

    Applicant: Lextar Electronics Corporation

    Inventor： Te-Chung WANG ,  Shiou-Yi KUO

    IPC: H01L33/48 ,  H01L33/52 ,  H01L21/02 ,  H01L29/06

    Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

    LIGHT-EMITTING DIODE CHIP
    22.
    发明申请
    LIGHT-EMITTING DIODE CHIP 审中-公开

    公开(公告)号：US20180337213A1

    公开(公告)日：2018-11-22

    申请号：US16046990

    申请日：2018-07-26

    Applicant: Lextar Electronics Corporation

    Inventor： Shiou-Yi KUO

    IPC: H01L27/15 ,  H01L23/62 ,  H01L33/06 ,  H01L33/62 ,  H01L33/60

    CPC classification number: H01L27/15 ,  H01L23/62 ,  H01L25/167 ,  H01L33/06 ,  H01L33/382 ,  H01L33/385 ,  H01L33/60

    Abstract: A light-emitting diode (LED) chip includes a substrate, a conductive layer, a first insulator layer, a light-emitting component, and an ESD protection component. The conductive layer is disposed on the substrate. The first insulator layer is disposed on the conductive layer and has a first opening and a second opening. The light-emitting component is disposed on the first insulator layer and includes a first semiconductor layer, a first quantum well layer, and a second semiconductor layer. The ESD protection component is disposed on the first insulator layer and separated from the light-emitting component. The ESD protection component includes a third semiconductor layer, a second quantum well layer, and a fourth semiconductor layer. The second quantum well layer is disposed between the third and fourth semiconductor layers. The first and fourth semiconductor layers are electrically isolated from each other before packaging the LED chip.

    WAFER WITH MICRO INTEGRATED CIRCUITS
    24.
    发明申请
    WAFER WITH MICRO INTEGRATED CIRCUITS 有权

    公开(公告)号：US20240413133A1

    公开(公告)日：2024-12-12

    申请号：US18733292

    申请日：2024-06-04

    Applicant: Lextar Electronics Corporation

    Inventor： Shiou-Yi KUO ,  Chin-Hung LUNG ,  Bo-Yu CHEN

    IPC: H01L25/075

    Abstract: A wafer with micro integrated circuits includes a transparent substrate and a plurality of micro components. The micro components are each attached to the transparent substrate by a plurality of transparent adhesive layers. Each of the micro components includes a bonding pad in direct contact with the transparent adhesive layer and an etching stop layer located on the side of the micro components opposite from the bonding pad.

    SEMICONDUCTOR CHIP AND LIGHT-EMITTING DEVICE
    29.
    发明申请
    SEMICONDUCTOR CHIP AND LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20220302349A1

    公开(公告)日：2022-09-22

    申请号：US17384812

    申请日：2021-07-26

    Applicant: Lextar Electronics Corporation

    Inventor： Shiou-Yi KUO

    IPC: H01L33/38 ,  H01L33/48 ,  H01L33/62

    Abstract: A semiconductor chip comprises a semiconductor stack and a passivation layer. The semiconductor stack comprises a top surface, a bottom surface opposite to the top surface, and a plurality of sidewalls between the top surface and the bottom surface. The passivation layer conformally covers the top surface and the sidewalls of the semiconductor stack. When viewing from the bottom surface, a plan-view contour of the semiconductor stack comprises a plurality of edges and corners. Each of the corners is defined by two adjacent edges. A plan-view contour of the passivation layer surrounding the plan-view contour of the semiconductor stack comprises a protruding portion adjacent to one of the corners and the protruding portion protrudes outwards from the plan-view contour of the passivation layer.

    LIGHT EMITTING DIODE STRUCTURE AND METHOD OF MANUFACTURING THEREOF
    30.
    发明申请
    LIGHT EMITTING DIODE STRUCTURE AND METHOD OF MANUFACTURING THEREOF 有权

    公开(公告)号：US20210036188A1

    公开(公告)日：2021-02-04

    申请号：US16524202

    申请日：2019-07-29

    Applicant: Lextar Electronics Corporation

    Inventor： Shiou-Yi KUO

    IPC: H01L33/22 ,  H01L33/00 ,  H01L33/38 ,  H01L33/44

    Abstract: A light emitting diode structure includes a semiconductor stack and a supporting breakpoint. The semiconductor stack includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The first semiconductor layer has a light emitting surface exposed outside and the light emitting surface has a rough texture. The light emitting layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the light emitting layer, and the second semiconductor layer has a type that is different from the first semiconductor layer. The supporting breakpoint is on the light emitting surface. The light emitting diode structure can be applied in wide color gamut (WCG) backlight module or ultra-thin backlight module.

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