公开(公告)号：US08368113B2

公开(公告)日：2013-02-05

申请号：US13114609

申请日：2011-05-24

申请人： Shuhei Matsuda ,  Erika Takenaka ,  Tomohiro Sanpei ,  Kazuto Morikawa ,  Masahiro Izumi ,  Kiyoshi Nishimura

发明人： Shuhei Matsuda ,  Erika Takenaka ,  Tomohiro Sanpei ,  Kazuto Morikawa ,  Masahiro Izumi ,  Kiyoshi Nishimura

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  F21V7/06 ,  F21V29/76 ,  F21Y2115/10 ,  H01L24/45 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： According to one embodiment, a light emitting device includes a ceramics substrate, a metallic thermally-conductive layer formed on the substrate in which the substrate involves no electric connection, a light emitting element mounted on the metallic thermally-conductive layer, and a metallic bonding layer interposed between the metallic thermally-conductive layer and the light emitting element to bond the light emitting element to the metallic thermally-conductive layer.

摘要翻译： 根据一个实施例，发光器件包括陶瓷衬底，形成在衬底上的金属导热层，其中衬底不涉及电连接，安装在金属导热层上的发光元件和金属接合 介于金属导热层和发光元件之间的层，以将发光元件结合到金属导热层。

公开(公告)号：US20120305963A1

公开(公告)日：2012-12-06

申请号：US13414458

申请日：2012-03-07

申请人： Kozo UEMURA ,  Soichi Shibusawa ,  Yumiko Hayashida ,  Kiyoshi Nishimura ,  Seiko Kawashima ,  Tsuyoshi Oyaizu ,  Masahiro Ogata ,  Shuhei Matsuda ,  Hiroki Tamai

发明人： Kozo UEMURA ,  Soichi Shibusawa ,  Yumiko Hayashida ,  Kiyoshi Nishimura ,  Seiko Kawashima ,  Tsuyoshi Oyaizu ,  Masahiro Ogata ,  Shuhei Matsuda ,  Hiroki Tamai

IPC分类号： H01L33/60

CPC分类号： H05K3/284 ,  F21S8/04 ,  F21V19/0055 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/56 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/73265 ,  H05K1/0209 ,  H05K3/244 ,  H05K2201/0162 ,  H05K2201/099 ,  H05K2201/10106 ,  H05K2201/2054 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a light-emitting device includes a substrate, a reflecting layer formed on the substrate, a light-emitting element placed on the reflecting layer, and a sealing resin layer that covers the reflecting layer and the light-emitting element. The oxygen permeability of the sealing resin layer is equal to or lower than 1200 cm3/(m2·day·atm), and the ratio of the area of the reflecting layer covered by the sealing resin layer to the entire area on the resin substrate covered by the sealing resin layer is between 30% and 75% inclusive.

摘要翻译： 根据一个实施例，发光装置包括基板，形成在基板上的反射层，放置在反射层上的发光元件和覆盖反射层和发光元件的密封树脂层。 密封树脂层的透氧度等于或低于1200cm3 /（m2·day·atm），并且覆盖在树脂基板上的密封树脂层覆盖的反射层的面积与覆盖的整个面积的比率 通过密封树脂层在30％和75％之间。

公开(公告)号：USD665105S1

公开(公告)日：2012-08-07

申请号：US29387861

申请日：2011-03-18

申请人： Nobuhiko Betsuda ,  Kiyoshi Nishimura ,  Kozo Uemura ,  Shuhei Matsuda ,  Soichi Shibusawa

设计人： Nobuhiko Betsuda ,  Kiyoshi Nishimura ,  Kozo Uemura ,  Shuhei Matsuda ,  Soichi Shibusawa

公开(公告)号：US20110309381A1

公开(公告)日：2011-12-22

申请号：US13162150

申请日：2011-06-16

申请人： Nobuhiko Betsuda ,  Soichi Shibusawa ,  Shuhei Matsuda ,  Kiyoshi Nishimura ,  Masatoshi Kumagai

发明人： Nobuhiko Betsuda ,  Soichi Shibusawa ,  Shuhei Matsuda ,  Kiyoshi Nishimura ,  Masatoshi Kumagai

IPC分类号： H01L27/15

CPC分类号： H05K1/0209 ,  F21S2/005 ,  F21S8/04 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H05K1/181 ,  H05K2201/10106 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a light-emitting device includes a series circuit, a substrate, and a sealing member. The series circuit includes a plurality of parallel circuits each including a plurality of light-emitting elements connected in parallel. The plurality of parallel circuits are connected in series. A plurality of groups are provided on the substrate. Each of the groups includes at least one of the light-emitting elements in the parallel circuit. The light-emitting elements are arranged in a divided manner according to each of the groups. The sealing member covers at least one of the light-emitting elements.

摘要翻译： 根据一个实施例，发光装置包括串联电路，基板和密封构件。 串联电路包括多个并联电路，每个并联电路包括并联连接的多个发光元件。 多个并联电路串联连接。 在基板上设置多个组。 每个组包括并联电路中的至少一个发光元件。 发光元件根据每个组分开排列。 密封构件覆盖至少一个发光元件。

公开(公告)号：USD663444S1

公开(公告)日：2012-07-10

申请号：US29387863

申请日：2011-03-18

申请人： Nobuhiko Betsuda ,  Kiyoshi Nishimura ,  Kozo Uemura ,  Shuhei Matsuda ,  Soichi Shibusawa

设计人： Nobuhiko Betsuda ,  Kiyoshi Nishimura ,  Kozo Uemura ,  Shuhei Matsuda ,  Soichi Shibusawa

公开(公告)号：US20120075836A1

公开(公告)日：2012-03-29

申请号：US13236672

申请日：2011-09-20

申请人： Kozo UEMURA ,  Soichi Shibusawa ,  Shuhei Matsuda ,  Nobuhiko Betsuda ,  Kiyoshi Nishimura ,  Masatoshi Kumagai

发明人： Kozo UEMURA ,  Soichi Shibusawa ,  Shuhei Matsuda ,  Nobuhiko Betsuda ,  Kiyoshi Nishimura ,  Masatoshi Kumagai

IPC分类号： F21V9/16 ,  F21V21/00

CPC分类号： H01L25/0753 ,  F21K9/27 ,  F21S8/031 ,  F21V23/023 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2113/00 ,  F21Y2115/10 ,  H01L33/54 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting device includes a substrate, and a plurality of light-emitting elements mounted on the substrate. The light-emitting elements are placed to meet conditions that the number B of light-emitting elements per unit area (cm2) of a mounting part is not less than 0.4 and a mean mounting density D is not less than 58 to not greater than 334, when a relationship of formula “D=A×B” is established, assuming D as a mean mounting density of light-emitting elements on a substrate, A as a current (mA) flowing through one light-emitting element, and B as the number of light-emitting elements per unit area (cm2) of a substantial mounting part for light-emitting elements.

摘要翻译： 发光装置包括基板和安装在基板上的多个发光元件。 放置发光元件以满足以下条件：安装部件的每单位面积（cm2）的发光元件的数量B不小于0.4，平均安装密度D不小于58至不大于334 当建立公式“D = A×B”的关系时，假设D作为基板上的发光元件的平均安装密度，A作为流过一个发光元件的电流（mA），B作为 用于发光元件的基本安装部件的每单位面积的发光元件的数量（cm2）。

公开(公告)号：US08098003B2

公开(公告)日：2012-01-17

申请号：US12790395

申请日：2010-05-28

申请人： Kazuto Morikawa ,  Masahiro Izumi ,  Kiyoshi Nishimura ,  Tomohiro Sanpei ,  Erika Takenaka ,  Shuhei Matsuda

发明人： Kazuto Morikawa ,  Masahiro Izumi ,  Kiyoshi Nishimura ,  Tomohiro Sanpei ,  Erika Takenaka ,  Shuhei Matsuda

IPC分类号： H01J5/16

CPC分类号： H05K1/0274 ,  F21K9/23 ,  F21K9/232 ,  F21Y2115/10 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H05K3/284 ,  H05K2201/0108 ,  H05K2201/10106 ,  H05K2201/2054 ,  H01L2924/00014

摘要： According to one embodiment, a light-emitting module includes a module substrate, a reflective layer, conductive layers, a light-emitting element, and a sealing member. A reflective layer is provided on a surface of an insulating layer of the module substrate, and the conductive layers are provided in the vicinity of the reflective layer. Further, the light-emitting element is provided on the reflective layer. Moreover, the translucent sealing member has translucency and bury the reflective layer, the conductive layers, and the light-emitting element. The ratio of the area occupied by the reflective layer and the conductive layers to the sealed region sealed by the sealing member is equal to or greater than 80%.

摘要翻译： 根据一个实施例，发光模块包括模块衬底，反射层，导电层，发光元件和密封构件。 在模块基板的绝缘层的表面上设置反射层，并且在反射层附近设置导电层。 此外，发光元件设置在反射层上。 此外，半透明密封构件具有半透明性并且掩埋反射层，导电层和发光元件。 反射层和导电层占据密封部件密封的密封区域的面积的比例等于或大于80％。

公开(公告)号：US08877643B2

公开(公告)日：2014-11-04

申请号：US13376259

申请日：2010-05-28

申请人： Shuhei Matsuda ,  Tetsuro Iwashita ,  Ryuichi Tanimoto ,  Takeru Takushima ,  Takeo Katoh

发明人： Shuhei Matsuda ,  Tetsuro Iwashita ,  Ryuichi Tanimoto ,  Takeru Takushima ,  Takeo Katoh

IPC分类号： H01L21/461 ,  H01L21/02 ,  B24B37/04 ,  C09G1/02

CPC分类号： H01L21/02024 ,  B24B37/044 ,  C09G1/02 ,  Y10S438/959

摘要： This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to the remaining of substances included in the polishing solution on the surface of the wafer can be suppressed as well as a polished silicon wafer. The method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, is characterized in that the number of abrasive grains included in the polishing solution is controlled to not more than 5×1013 grains/cm3.

摘要翻译： 本发明提供一种抛光硅晶片的方法，其中可以获得与常规抛光方法相同的高平整度，并且还可以抑制由于在晶片表面上包含在抛光溶液中的物质残留而导致的缺陷的发生 以及抛光的硅晶片。 通过将含有磨粒的抛光溶液供给到抛光垫的表面上，然后将抛光垫相对滑动到硅晶片以抛光硅晶片的表面来研磨硅晶片的方法，其特征在于，研磨剂的数量 包含在抛光溶液中的晶粒被控制为不超过5×1013个颗粒/ cm3。

公开(公告)号：US20120080775A1

公开(公告)日：2012-04-05

申请号：US13376259

申请日：2010-05-28

申请人： Shuhei Matsuda ,  Tetsuro Iwashita ,  Ryuichi Tanimoto ,  Takeru Takushima ,  Takeo Katoh

发明人： Shuhei Matsuda ,  Tetsuro Iwashita ,  Ryuichi Tanimoto ,  Takeru Takushima ,  Takeo Katoh

IPC分类号： H01L21/306 ,  H01L29/34

CPC分类号： H01L21/02024 ,  B24B37/044 ,  C09G1/02 ,  Y10S438/959

摘要： This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to the remaining of substances included in the polishing solution on the surface of the wafer can be suppressed as well as a polished silicon wafer.The method of polishing a silicon wafer by supplying a polishing solution containing abrasive grains onto a surface of a polishing pad and then relatively sliding the polishing pad to a silicon wafer to polish the surface of the silicon wafer, is characterized in that the number of abrasive grains included in the polishing solution is controlled to not more than 5×1013 grains/cm3.

摘要翻译： 本发明提供一种抛光硅晶片的方法，其中可以获得与常规抛光方法相同的高平整度，并且还可以抑制由于在晶片表面上包含在抛光溶液中的物质残留而导致的缺陷的发生 以及抛光的硅晶片。 通过将含有磨粒的抛光溶液供给到抛光垫的表面上，然后将抛光垫相对滑动到硅晶片以抛光硅晶片的表面来研磨硅晶片的方法，其特征在于，研磨剂的数量 包含在抛光溶液中的晶粒被控制为不超过5×1013个颗粒/ cm3。