Abstract:
A surface of an insulating substrate is charged to a target potential. In one embodiment, the surface is flooded with a higher-energy electron beam such that the electron yield is greater than one. Subsequently, the surface is flooded with a lower-energy electron beam such that the electron yield is less than one. In another embodiment, the substrate is provided with the surface in a state at an approximate initial potential above the target potential. The surface is then flooded with charged particle such that the charge yield of scattered particles is less than one, such that a steady state is reached at which the target potential is achieved. Another embodiment pertains to an apparatus for charging a surface of an insulating substrate to a target potential.
Abstract:
One embodiment relates to an electronically-variable electrostatic immersion lens in an electron beam apparatus. The electrostatic immersion lens includes a top electrode configured with a first voltage applied thereto, an upper bottom electrode configured with a second voltage applied thereto, and a lower bottom electrode configured with a third voltage applied thereto. The third voltage is controlled separately from the second voltage. Other embodiments are also disclosed.
Abstract:
A method and apparatus for generating an image of a sample with a electron beam apparatus is disclosed. The image is generated from a portion of the sample with a measurement device having a source unit for directing an electron beam substantially towards the sample. The measurement device also has a detector for detecting particles that are emitted from the sample, an electrode proximal to the sample having a hole through which the electron beam and a portion of the emitted particles may pass, and an image generator for generating the image of the sample from the detected particles. A first voltage is applied to the electrode when the electron beam is substantially in a center of the hole. The first voltage is selected to control positive charge build up on the sample. A second voltage is applied to the electrode when the electron beam is deflected a predetermined distance from the center of the hole. The second voltage is selected to allow a significant amount of emitted particles to reach the detector to facilitate image generation while maintaining charge control.
Abstract:
An electron source includes a negative electron affinity photocathode on a light-transmissive substrate and a light beam generator for directing a light beam through the substrate at the photocathode for exciting electrons into the conduction band. The photocathode has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electron source further includes electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the photocathode at high vacuum. The photocathode is patterned to define emission areas. A patterned mask may be located on the emission surface of the active layer, may be buried within the active layer or may be located between the active layer and the substrate.
Abstract:
One embodiment relates to an electron-beam apparatus for writing a pattern on a target substrate. The apparatus includes a plurality of arrays of actively-controlled pixel elements at a surface of a reflective electron patterning device. The plurality of arrays of actively-controlled pixel elements are arranged so that there is an area without any actively-controlled pixel elements in a region surrounding an optical axis of the objective lens. The plurality of arrays may be arranged to each lie on a circle centered on the optical axis. Other features, aspects and embodiments are also disclosed.
Abstract:
One embodiment relates to an electron beam apparatus for inspecting or reviewing a manufactured substrate. The apparatus includes a cathode, an extraction electrode, a lens electrode, an anode, deflectors, electron lenses, and a detector. The extraction voltage is positive relative to the cathode voltage, such that electrons are emitted from the cathode. Advantageously, the lens voltage is positive relative to the extraction voltage, such that electrons are accelerated from the extraction electrode to the lens electrode while the electrons are condensed to form an electron beam. The electron beam is transmitted through an opening of the anode and is controllably deflected to scan it over an area of the surface. The detector detects secondary electrons from the substrate so as to form an image of the scanned area. Other embodiments and features are also disclosed.
Abstract:
One embodiment disclosed relates to an electron beam apparatus for inspection of a semiconductor wafer, wherein substantially an entire area of the wafer surface is scanned without moving the stage. A cathode ray tube (CRT) gun may be used to rapidly (and cost effectively) scan the beam over the wafer. Another embodiment disclosed relates to a high-speed automated e-beam inspector configured to scan the e-beam in one dimension while translating the wafer in a perpendicular direction. The translation may be linear, or alternatively, may be in a spiral path. Other embodiments are also disclosed.