公开(公告)号：US06551528B1

公开(公告)日：2003-04-22

申请号：US09647137

申请日：2000-11-14

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC分类号： G02B520

CPC分类号： G02F1/3551 ,  G02F1/37 ,  H01S3/109 ,  H01S3/1095 ,  H01S3/1611

摘要： As a wavelength conversion crystal whose double refraction index is controllable, a crystal represented by a formula (I), M1xM21−xCa4O(BL3)3, where each of M1 and M2 represents one or more types of different rare earth elements and 0

摘要翻译： 作为双重折射率可控的波长转换晶体，由式（I）表示的晶体M1xM21-xCa4O（BL3）3，其中M1和M2各自表示一种或多种不同的稀土元素，0

公开(公告)号：US07959729B2

公开(公告)日：2011-06-14

申请号：US10549494

申请日：2004-03-15

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Hidekazu Umeda

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Hidekazu Umeda

IPC分类号： C30B9/12

CPC分类号： C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

摘要： A production method is provided in which Group-III-element nitride single crystals that have a lower dislocation density and a uniform thickness and are transparent, high quality, large, and bulk crystals can be produced with a high yield. The method for producing Group-III-element nitride single crystals includes: heating a reaction vessel containing at least one metal element selected from the group consisting of an alkali metal and an alkaline-earth metal and at least one Group III element selected from the group consisting of gallium (Ga), aluminum (Al), and indium (In) to prepare a flux of the metal element; and feeding nitrogen-containing gas into the reaction vessel and thereby allowing the Group III element and nitrogen to react with each other in the flux to grow Group-III-element nitride single crystals, wherein the single crystals are grown, with the flux being stirred by rocking the reaction vessel, for instance.

摘要翻译： 提供了一种制备方法，其中可以以高产率生产具有较低位错密度和均匀厚度并且是透明，高质量，大体积晶体的III族元素氮化物单晶。 制备III族元素的氮化物单晶的方法包括：加热含有选自碱金属和碱土金属中的至少一种金属元素的反应容器和选自碱金属和碱土金属的至少一种III族元素 由镓（Ga），铝（Al）和铟（In）组成，以制备金属元素的焊剂; 并将含氮气体进料到反应容器中，从而允许III族元素和氮气在助熔剂中彼此反应，生长组分III族元素氮化物单晶，其中单晶生长，助熔剂被搅拌 通过摇动反应容器。

公开(公告)号：US07905958B2

公开(公告)日：2011-03-15

申请号：US11579645

申请日：2005-03-30

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

IPC分类号： C30B21/02

CPC分类号： C30B9/12 ,  C30B11/00 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L33/0075 ,  H01S5/32341

摘要： A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.

摘要翻译： 一种制造III族氮化物半导体晶体的方法包括以下步骤：在反应器中容纳至少含有III族金属元素和碱金属元素的合金，将含氮物质引入反应器中，将含氮物质 提供合金熔融的合金中的物质，以及生长III族氮化物半导体晶体。 因此可以提供获得小吸收系数的III族氮化物半导体晶体及其制造方法，以及获得高发光强度的III族氮化物半导体器件。

公开(公告)号：US20070101931A1

公开(公告)日：2007-05-10

申请号：US11590930

申请日：2006-11-01

申请人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

发明人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B25/00 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.

摘要翻译： 本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。 待生长半导体晶体的基板的至少一部分由助熔剂材料形成。 半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。 或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。 助熔剂材料由硅形成。 或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

公开(公告)号：US07029528B2

公开(公告)日：2006-04-18

申请号：US10469987

申请日：2002-03-15

申请人： Hideomi Koinuma ,  Yuji Matsumoto ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

发明人： Hideomi Koinuma ,  Yuji Matsumoto ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC分类号： C30B29/22

CPC分类号： G02F1/37 ,  C30B29/22 ,  C30B33/10 ,  G02F1/3551 ,  G02F2001/3509

摘要： There are provided a method of superflattening an oxide crystal that is soluble neither with acid nor with alkaline, a method of making a ReCa4O(BO3)3 family oxide single crystal thin film using the superflattening method, a ReCa4O(BO3)3 family oxide single crystal thin film having a SHG property, a superflattening method for light incident/emitting surfaces, and a defect assessing method for oxide crystals. The surface of an oxide crystal that is soluble neither with acid nor with alkaline is reduced with a reducing agent, the reduced oxide crystal surface is dissolved with an aqueous solution of acid or alkaline, the surface dissolved oxide crystal is heat-treated in the atmosphere, whereby the surface of an oxide crystal that is soluble neither with acid nor with alkaline is superflattened to an atomic level. According to this method, a chemically stable oxide which because of its complexity in both composition and structure is soluble neither with acid nor with alkaline and is insoluble even with a fluoric acid is allowed by reduction to be converted into a simpler oxide conventionally soluble with hydrochloric, nitric or sulfuric acid; hence a surface of its crystal is rendered capable of dissolving. Then, heat-treating the dissolved surface in the atmosphere at a suitable temperature for a suitable time period allows surface atoms to be rearranged and the surface to be superflattened to an atomic level. The present invention is applicable to the technical fields that require ultraviolet laser light, especially as core technologies of optical devices applied to optical information processing, optical communication or the like.

摘要翻译： 提供了一种对既不具有酸也不与碱性溶解的氧化物晶体进行超平坦化的方法，制备ReCa 4 O（BO 3 3）3的方法 使用超平坦化方法的ReCa 4 O 3（3-3）3族氧化物单晶薄膜 具有SHG特性的膜，用于光入射/发射表面的超平面方法，以及氧化物晶体的缺陷评估方法。 用还原剂还原不溶于酸和碱的氧化物晶体的表面，还原的氧化物晶体表面用酸或碱的水溶液溶解，表面溶解的氧化物晶体在大气中进行热处理 由此，不仅酸和碱也不溶解的氧化物晶体的表面被超级原子化。 根据该方法，化学稳定的氧化物由于其组成和结构的复杂性既不溶于酸也不溶于碱，并且即使用氟酸也不溶于还原，可以转化为常规可溶于盐酸的简单氧化物 ，硝酸或硫酸; 因此其晶体的表面能够溶解。 然后，在合适的温度下对溶解在大气中的表面进行适当的时间周期处理，使得表面原子被重新排列并将表面超平坦化到原子水平。 本发明适用于需要紫外线激光的技术领域，特别是作为光学信息处理，光通信等的光学装置的核心技术。

公开(公告)号：US20060051942A1

公开(公告)日：2006-03-09

申请号：US10522488

申请日：2003-06-30

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Kunimichi Omae ,  Tomoya Iwahashi ,  Masanori Morishita

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Kunimichi Omae ,  Tomoya Iwahashi ,  Masanori Morishita

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B9/12 ,  C30B29/403

摘要： A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.

公开(公告)号：US20050254118A1

公开(公告)日：2005-11-17

申请号：US11169668

申请日：2005-06-30

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Zhang-Gui Hu

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Zhang-Gui Hu

IPC分类号： G02F1/355 ,  G02F1/35 ,  H01S3/10

CPC分类号： G02F1/3551

摘要： There is provided a nonlinear optical crystal which is presented by the formula: K2Al2B2O7. This nonlinear optical crystal is a vacuum ultraviolet light generating nonlinear optical crystal which is easy to grow and of high practical use. There are also provided a wavelength conversion method using this crystal, and an element and a wavelength conversion apparatus for use in the method.

摘要翻译： 提供了一种非线性光学晶体，其由下列公式表示：K 2 2 Al 2 B 2 N 2 O 7 。 这种非线性光学晶体是一种容易生长和高实用性的真空紫外线发生非线性光学晶体。 还提供了使用该晶体的波长转换方法以及用于该方法的元件和波长转换装置。

公开(公告)号：US20050241568A1

公开(公告)日：2005-11-03

申请号：US10525809

申请日：2003-08-25

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Hiroaki Adachi ,  Hiroshi Masuhara ,  Youichiroh Hosokawa ,  Kazufumi Takano

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Hiroaki Adachi ,  Hiroshi Masuhara ,  Youichiroh Hosokawa ,  Kazufumi Takano

IPC分类号： C30B7/00 ,  C30B9/00

CPC分类号： C30B7/00 ,  C30B29/58 ,  Y10S117/904

摘要： The present invention relates to a process for producing high-quality crystals of protein or organic substances easily and efficiently. A solution of protein or an organic substance is prepared and then is cooled slowly to be supersaturated to a low degree. This supersaturated solution is irradiated with a femtosecond laser 10. A local explosion phenomenon occurs at the focal point of the laser and thereby a crystalline nucleus is generated. A high-quality crystal is obtained when a crystal is grown on the crystalline nucleus over a long period of time. The femtosecond laser to be used herein can be a titanium:sapphire laser having a wavelength of 800 nm, a duration of 120 fs, a frequency of 1 kHz, and an output of 400 mW.

摘要翻译： 本发明涉及容易高效地生产蛋白质或有机物质的优质晶体的方法。 制备蛋白质或有机物质的溶液，然后缓慢冷却至低饱和度。 用飞秒激光10照射该过饱和溶液。 在激光的焦点发生局部爆炸现象，从而产生晶核。 当晶体长时间在晶核上生长时，获得高质量的晶体。 本文使用的飞秒激光可以是波长为800nm，持续时间为120fs，频率为1kHz，输出为400mW的钛：蓝宝石激光。

公开(公告)号：US08084281B2

公开(公告)日：2011-12-27

申请号：US12087048

申请日：2007-03-15

申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L21/00

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787 ,  H01L33/0075

摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

摘要翻译： 本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个 选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

公开(公告)号：US07794539B2

公开(公告)日：2010-09-14

申请号：US10599501

申请日：2005-03-31

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Yasuhito Takahashi

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Yasuhito Takahashi

IPC分类号： C30B9/00 ,  C30B30/04 ,  C30B28/06 ,  C30B11/00

CPC分类号： C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

摘要： A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in FIG. 7.

摘要翻译： 一种生产III族元素的氮化物晶体的方法，其中获得了改善的生长速率并且可以在短时间内生长大量的高质量晶体，其中使用的制造装置以及使用该方法和装置得到的半导体元件 被提供。 该方法是生产III族元素氮化物晶体的方法，其包括使含有III族元素，氮和至少一种碱金属和碱土金属的材料溶液经受加压和加热的晶体生长过程 含氮气体的气氛使得材料溶液中的氮和III族元素彼此反应生长晶体。 该方法还包括在晶体生长过程之前，制备材料制备方法，该方法是在含氮气体的气氛中，将环境温度和环境压力中的至少一种设定为 高于设定为晶体生长过程的条件，使得氮能够溶解在含有III族元素和碱金属和碱土金属中的至少一种的熔体中。 根据本发明的方法可以通过使用例如图1所示的制造装置来执行。 7。