中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

56 records (took 0.046 seconds)

    CONFINED RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS
    21.
    发明申请
    CONFINED RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS 有权
    限制电阻可变存储器单元结构和方法

    公开(公告)号：US20130252396A1

    公开(公告)日：2013-09-26

    申请号：US13894059

    申请日：2013-05-14

    Applicant: Micron Technology, Inc.

    Inventor： Brenda D. Kraus ,  Eugene P. Marsh ,  Timothy A. Quick

    IPC: H01L45/00

    CPC classification number: H01L45/1616 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148

    Abstract: Confined resistance variable memory cell structures and methods are described herein. One or more methods of forming a confined resistance variable memory cell structure includes forming a via in a memory cell structure and forming a resistance variable material in the via by performing a process that includes providing a germanium amidinate precursor and a first reactant to a process chamber having the memory cell structure therein and providing an antimony ethoxide precursor and a second reactant to the process chamber subsequent to removing excess germanium.

    Abstract translation: 本文描述了限制性电阻变量存储单元结构和方法。 形成限制电阻可变存储单元结构的一种或多种方法包括在存储单元结构中形成通孔，并在通孔中形成电阻可变材料，通过执行包括向处理室提供锗酰脒前体和第一反应物的方法 在其中具有记忆单元结构并且在除去过量的锗之后向处理室提供锑乙醇前体和第二反应物。

    SEMICONDUCTOR STRUCTURES COMPRISING CRYSTALLINE PrCaMnO (PCMO) FORMED BY ATOMIC LAYER DEPOSITION
    22.
    发明申请
    SEMICONDUCTOR STRUCTURES COMPRISING CRYSTALLINE PrCaMnO (PCMO) FORMED BY ATOMIC LAYER DEPOSITION 审中-公开
    包含由原子层沉积形成的晶体PrCaMnO（PCMO）的半导体结构

    公开(公告)号：US20130221312A1

    公开(公告)日：2013-08-29

    申请号：US13860166

    申请日：2013-04-10

    Applicant: Micron Technology, Inc.

    Inventor： Eugene P. Marsh

    IPC: H01L45/00

    CPC classification number: H01L45/147 ,  C23C16/409 ,  C23C16/45531 ,  H01L45/1616

    Abstract: Semiconductor structures include PrCaMnO (PCMO) material formed by atomic layer deposition. The PCMO material is formed by exposing a surface of a substrate to a manganese-containing precursor, an oxygen-containing precursor, a praseodymium-containing precursor and a calcium-containing precursor. The resulting PCMO material is crystalline.

    Abstract translation: 半导体结构包括通过原子层沉积形成的PrCaMnO（PCMO）材料。 PCMO材料通过将基材的表面暴露于含锰前体，含氧前体，含镨前体和含钙前体而形成。 得到的PCMO材料是结晶的。

    METHODS OF FORMING A MEMORY CELL COMPRISING A METAL CHALCOGENIDE MATERIAL
    25.
    发明申请
    METHODS OF FORMING A MEMORY CELL COMPRISING A METAL CHALCOGENIDE MATERIAL 审中-公开

    公开(公告)号：US20190319187A1

    公开(公告)日：2019-10-17

    申请号：US16457194

    申请日：2019-06-28

    Applicant: Micron Technology, Inc.

    Inventor： Eugene P. Marsh ,  Stefan Uhlenbrock

    IPC: H01L45/00 ,  H01L21/02

    Abstract: A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the chalcogenide precursor to form a metal chalcogenide material on a substrate. The metal precursor is a carboxylate of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid. The chalcogenide precursor is a hydride, alkyl, or aryl precursor of sulfur, selenium, or tellurium or a silylhydride, silylalkyl, or silylaryl precursor of sulfur, selenium, or tellurium. Methods of forming a memory cell including the metal chalcogenide material are also disclosed, as are memory cells including the metal chalcogenide material.

    Conductive nanoparticles
    28.
    发明授权
    Conductive nanoparticles 有权
    导电纳米粒子

    公开(公告)号：US09496355B2

    公开(公告)日：2016-11-15

    申请号：US14754211

    申请日：2015-06-29

    Applicant: Micron Technology, Inc.

    Inventor： Brenda D Kraus ,  Eugene P. Marsh

    IPC: H01L21/285 ,  H01L21/336 ,  H01L29/788 ,  H01L29/423 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/28 ,  H01L29/792

    CPC classification number: H01L29/42332 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/28273 ,  H01L21/28556 ,  H01L29/7881 ,  Y10S438/964 ,  Y10S977/943

    Abstract: Isolated conductive nanoparticles on a dielectric layer and methods of fabricating such isolated conductive nanoparticles provide charge storage units in electronic structures for use in a wide range of electronic devices and systems. The isolated conductive nanoparticles may be used as a floating gate in a flash memory. In an embodiment, conductive nanoparticles are deposited on a dielectric layer by a plasma-assisted deposition process such that each conductive nanoparticle is isolated from the other conductive nanoparticles to configure the conductive nanoparticles as charge storage elements.

    Abstract translation: 电介质层上的隔离导电纳米颗粒和制造这种隔离导电纳米颗粒的方法提供电子结构中的电荷存储单元，用于广泛的电子设备和系统。 隔离的导电纳米颗粒可以用作闪存中的浮动栅极。 在一个实施例中，通过等离子体辅助沉积工艺将导电纳米颗粒沉积在电介质层上，使得每个导电纳米颗粒与其它导电纳米颗粒分离，以将导电纳米颗粒配置为电荷存储元件。

    Methods of Forming and Using Materials Containing Silicon and Nitrogen
    30.
    发明申请
    Methods of Forming and Using Materials Containing Silicon and Nitrogen 有权
    形成和使用含硅和氮的材料的方法

    公开(公告)号：US20160254447A1

    公开(公告)日：2016-09-01

    申请号：US15153868

    申请日：2016-05-13

    Applicant: Micron Technology, Inc.

    Inventor： Eugene P. Marsh

    IPC: H01L45/00

    CPC classification number: H01L45/06 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/0228 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608

    Abstract: Some embodiments include methods utilizing atomic layer deposition to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses Sil4 as one precursor and uses a nitrogen-containing material as another precursor. Some embodiments include methods of forming a structure in which a chalcogenide region is formed over a semiconductor substrate; and in which Sil4 is used as a precursor during formation of silicon nitride material directly against a surface of the chalcogenide region.

    Abstract translation: 一些实施例包括利用原子层沉积形成含有硅和氮的材料的方法（例如，氮化硅）。 原子层沉积使用Sil4作为一种前体，并使用含氮材料作为另一种前体。 一些实施方案包括形成在半导体衬底上形成硫族化物区的结构的方法; 并且其中在将氮化硅材料形成直接抵抗硫族化物区域的表面时，使用Sil4作为前体。

Patent Agency Ranking