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21.发明申请SOLID STATE LIGHTING DEVICES WITH CELLULAR ARRAYS AND ASSOCIATED METHODS OF MANUFACTURING 有权具有细胞阵列的固态照明装置及相关的制造方法公开(公告)号：US20140319536A1
公开(公告)日：2014-10-30
申请号：US14262538
申请日：2014-04-25
Applicant: Micron Technology, Inc.
Inventor： Scott E. Sills , Lifang Xu , Scott D. Schellhammer , Thomas Gehrke , Zaiyuan Ren , Anton J. De Villiers
CPC classification number: H01L33/24 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/382 , H01L33/405
Abstract: Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material.
Abstract translation: 本文公开了具有蜂窝阵列和相关制造方法的固态照明（“SSL”）设备。 在一个实施例中，发光二极管包括具有第一表面和与第一表面相对的第二表面的半导体材料。 半导体材料具有从第一表面延伸到半导体材料中的孔。 发光二极管还包括与半导体材料直接接触的有源区，并且有源区的至少一部分位于半导体材料的孔中。
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公开(公告)号：US20130168719A1
公开(公告)日：2013-07-04
申请号：US13780136
申请日：2013-02-28
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Charles M. Watkins , Kevin Tetz , Thomas Gehrke
IPC: H01L33/44
CPC classification number: H01L33/44 , H01L33/507 , H01L2933/0041
Abstract: A method and system for manufacturing a light conversion structure for a light emitting diode (LED) is disclosed. The method includes forming a transparent, thermally insulating cover over an LED chip. The method also includes dispensing a conversion material onto the cover to form a conversion coating on the cover, and encapsulating the LED, the silicone cover, and the conversion coating within an encapsulant. Additional covers and conversion coatings can be added.
Abstract translation: 公开了一种用于制造发光二极管（LED）的光转换结构的方法和系统。 该方法包括在LED芯片上形成透明的隔热盖。 该方法还包括将转换材料分配到盖上以在盖上形成转化涂层，并且将密封剂中的LED，硅树脂盖和转化膜封装。 可以添加额外的盖子和转换涂层。
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公开(公告)号：US20240297269A1
公开(公告)日：2024-09-05
申请号：US18664203
申请日：2024-05-14
Applicant: Micron Technology, Inc.
Inventor： Scott D. Schellhammer , Scott E. Sills , Lifang Xu , Thomas Gehrke , Zaiyuan Ren , Anton J. De Villiers
CPC classification number: H01L33/24 , H01L33/007 , H01L33/16 , H01L33/22 , H01L33/32
Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.
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24.发明授权公开(公告)号：US09601658B2
公开(公告)日：2017-03-21
申请号：US14810092
申请日：2015-07-27
Applicant: Micron Technology, Inc.
Inventor： Zaiyuan Ren , Thomas Gehrke
CPC classification number: H01L33/06 , C30B25/00 , H01L21/0237 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/32
Abstract: Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength.
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25.发明申请公开(公告)号：US20160225948A1
公开(公告)日：2016-08-04
申请号：US15005794
申请日：2016-01-25
Applicant: Micron Technology, Inc.
Inventor： Cem Basceri , Thomas Gehrke
CPC classification number: H01L33/12 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02521 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02647 , H01L22/22 , H01L33/007 , H01L33/025 , H01L33/16 , H01L33/20 , H01L33/32
Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.
Abstract translation: 本文公开了固态照明装置和相关的制造方法。 在一个实施例中，固态照明装置包括在衬底材料的衬底表面上具有衬底表面和多个半球形晶粒硅（“HSG”）结构的衬底材料。 固态照明装置还包括在衬底材料上的半导体材料，其至少一部分在多个HSG结构之间。
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Patent Agency Ranking
26.发明申请公开(公告)号：US20160027957A1
公开(公告)日：2016-01-28
申请号：US14874231
申请日：2015-10-02
Applicant: Micron Technology, Inc.
Inventor： Cem Basceri , Thomas Gehrke , Charles M. Watkins
CPC classification number: H01L33/0075 , H01L33/005 , H01L33/06 , H01L33/08 , H01L33/38 , H01L33/502 , H01L33/508 , H01L2933/0033 , H01L2933/0041
Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.
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27.发明授权Solid state lighting devices with cellular arrays and associated methods of manufacturing 有权具有蜂窝阵列和相关制造方法的固态照明设备公开(公告)号：US09041005B2
公开(公告)日：2015-05-26
申请号：US14262538
申请日：2014-04-25
Applicant: Micron Technology, Inc.
Inventor： Scott E. Sills , Lifang Xu , Scott D. Schellhammer , Thomas Gehrke , Zaiyuan Ren , Anton J. De Villiers
CPC classification number: H01L33/24 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/382 , H01L33/405
Abstract: Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material.
Abstract translation: 本文公开了具有蜂窝阵列和相关制造方法的固态照明（“SSL”）设备。 在一个实施例中，发光二极管包括具有第一表面和与第一表面相对的第二表面的半导体材料。 半导体材料具有从第一表面延伸到半导体材料中的孔。 发光二极管还包括与半导体材料直接接触的有源区，并且有源区的至少一部分位于半导体材料的孔中。
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28.发明申请公开(公告)号：US20150004729A1
公开(公告)日：2015-01-01
申请号：US14489344
申请日：2014-09-17
Applicant: Micron Technology, Inc.
Inventor： Cem Basceri , Thomas Gehrke , Charles M. Watkins
CPC classification number: H01L33/0075 , H01L33/005 , H01L33/06 , H01L33/08 , H01L33/38 , H01L33/502 , H01L33/508 , H01L2933/0033 , H01L2933/0041
Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.
Abstract translation: 本文描述了具有内置色度转换和相关制造方法的发光器件的各种实施例。 在一个实施例中，制造发光器件的方法包括依次在衬底材料上形成第一半导体材料，有源区和第二半导体材料，所述有源区被配置为产生第一发射。 然后在第二半导体材料上形成转换材料。 转换材料具有晶体结构并且被配置为产生第二发射。 该方法还包括调整转换材料的特性，使得第一和第二发射的组合具有至少近似于发光器件的目标色度的色度。
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29.发明申请公开(公告)号：US20140246683A1
公开(公告)日：2014-09-04
申请号：US14276163
申请日：2014-05-13
Applicant: Micron Technology, Inc.
Inventor： Cem Basceri , Thomas Gehrke
CPC classification number: H01L33/12 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02521 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02647 , H01L22/22 , H01L33/007 , H01L33/025 , H01L33/16 , H01L33/20 , H01L33/32
Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.
Abstract translation: 本文公开了固态照明装置和相关的制造方法。 在一个实施例中，固态照明装置包括在衬底材料的衬底表面上具有衬底表面和多个半球形晶粒硅（“HSG”）结构的衬底材料。 固态照明装置还包括在衬底材料上的半导体材料，其至少一部分在多个HSG结构之间。
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公开(公告)号：US11843072B2
公开(公告)日：2023-12-12
申请号：US17360350
申请日：2021-06-28
Applicant: Micron Technology, Inc.
Inventor： Zaiyuan Ren , Thomas Gehrke
CPC classification number: H01L33/0025 , H01L33/0075 , H01L33/16 , H01L33/32
Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.
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