公开(公告)号：US20050286596A1

公开(公告)日：2005-12-29

申请号：US11009057

申请日：2004-12-13

申请人： Naotaka Mukoyama ,  Nobuaki Ueki

发明人： Naotaka Mukoyama ,  Nobuaki Ueki

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/183

CPC分类号： H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18388 ,  H01S2301/176 ,  H01S2301/18

摘要： A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a first aperture defining an output region of laser light generated in the active region, and a light confining region being provided between the metallic part and the lower semiconductor reflector, and having a second aperture defining an emission region of the laser light. The upper semiconductor reflector includes a lenticular medium having a convex surface toward the lower semiconductor reflector.

摘要翻译： 垂直腔表面发射激光二极管包括下半导体反射器，有源区，构成具有下半导体反射器的谐振器的上半导体反射器，金属部分形成在上半导体反射器上，金属部分具有限定输出区域的第一孔 在激活区域中产生的激光，以及设置在金属部件和下半导体反射器之间的限光区域，并具有限定激光发射区域的第二孔。 上半导体反射器包括具有朝向下半导体反射器的凸表面的透镜介质。

公开(公告)号：US20050265412A1

公开(公告)日：2005-12-01

申请号：US10986038

申请日：2004-11-12

申请人： Nobuaki Ueki

发明人： Nobuaki Ueki

IPC分类号： H01S3/08 ,  H01S5/183 ,  H01S5/187

CPC分类号： H01S5/18377 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/18394

摘要： A surface emitting semiconductor laser diode includes a substrate, a first reflective layer formed over the substrate, an active layer formed over the first reflective layer, a second reflective layer formed over the active layer, a first conductive layer having an opening therein and formed over the second reflective layer, and an additional reflective layer formed over the second reflective layer so as to cover the opening, wherein the additional reflective layer is covered, at least at a portion thereof, with a second conductive layer.

摘要翻译： 表面发射半导体激光二极管包括衬底，形成在衬底上的第一反射层，形成在第一反射层上的有源层，形成在有源层上的第二反射层，在其中形成有开口的第一导电层， 第二反射层，以及形成在第二反射层上以覆盖开口的附加反射层，其中附加反射层至少在其一部分处被第二导电层覆盖。

公开(公告)号：US20050111507A1

公开(公告)日：2005-05-26

申请号：US10882268

申请日：2004-07-02

申请人： Nobuaki Ueki ,  Fumio Koyama

发明人： Nobuaki Ueki ,  Fumio Koyama

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S5/042 ,  H01S5/06 ,  H01S5/183

CPC分类号： H01S5/18377 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/18325 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18394 ,  H01S2301/166

摘要： A surface-emitting semiconductor laser includes a first reflection layer formed on a substrate; an active layer formed on the first reflection layer; a second reflection layer formed on the active region; an electrode that has an aperture that defines a light emission range and is provided on the second reflection layer so that an uppermost layer of the second reflection layer is exposed through the aperture; and a third reflection layer that is provided on the electrode so as to cover the aperture. The third reflection layer includes a conductive film that electrically contacts the uppermost layer of the second reflection layer.

摘要翻译： 表面发射半导体激光器包括形成在基板上的第一反射层; 形成在所述第一反射层上的有源层; 形成在有源区上的第二反射层; 具有限定发光范围的孔的电极，设置在所述第二反射层上，使得所述第二反射层的最上层通过所述孔露出; 以及设置在电极上以覆盖孔的第三反射层。 第三反射层包括与第二反射层的最上层电接触的导电膜。

公开(公告)号：US20090209871A1

公开(公告)日：2009-08-20

申请号：US12196412

申请日：2008-08-22

申请人： Nobuaki Ueki ,  Ryoji Ishii

发明人： Nobuaki Ueki ,  Ryoji Ishii

IPC分类号： A61B5/02 ,  A61B5/00

CPC分类号： A61B5/0261

摘要： Provided is an apparatus for measuring blood flow rate that includes a light emitting portion for irradiating living tissues with laser light, a photo-detector for detecting at least one of reflection, scattering, or absorption of the laser light, and an operation portion for calculating blood flow rate based on the difference between the spectrum of the laser light from the light emitting portion and the spectrum of the light detected by the photo-detector. The spectrum of the laser light has plural peaks.

摘要翻译： 本发明提供一种用于测量血液流量的装置，其包括用于用激光照射活组织的发光部分，用于检测激光的反射，散射或吸收中的至少一种的光检测器，以及用于计算 基于来自发光部的激光的光谱与由光检测器检测到的光的光谱之差的血流量。 激光的光谱具有多个峰。

公开(公告)号：US07375825B2

公开(公告)日：2008-05-20

申请号：US11204152

申请日：2005-08-16

申请人： Nobuaki Ueki

发明人： Nobuaki Ueki

IPC分类号： G01B11/02

CPC分类号： G01B9/02058 ,  G01B9/02057 ,  G01J3/0213 ,  G01J2009/0292

摘要： The light intensity ratio adjustment filter is placed between the reference surface and the sample surface of the interferometer. This light intensity ratio adjustment filter has a light intensity ratio adjustment film including an optical reflection-absorption layer and a dielectric anti-reflection layer on the surface of a transparent substrate made of glass on the sample side, and an optical anti-reflection film on the reference surface side, and acts so as to reflect part of the incident light from the surface opposite the reference surface, and after absorbing part of the remaining light, transmit the remainder towards the sample, and furthermore, absorb part of the light returned from the sample while controlling reflection, and transmit the remainder in the direction of the reference surface as the sample light.

摘要翻译： 光强比调节滤光器被放置在干涉仪的参考表面和样品表面之间。 该光强度比调节滤光器具有在样品侧的由玻璃制成的透明基板的表面上具有光反射吸收层和介电抗反射层的光强度比调节膜，以及光学抗反射膜 参考表面侧，并且用于反射来自与参考表面相对的表面的入射光的一部分，并且在吸收剩余光的一部分之后，将剩余部分透射到样品，此外，吸收部分从基准表面返回的光 样本，同时控制反射，并将剩余部分沿参考表面的方向作为样本光传输。

公开(公告)号：US07336688B2

公开(公告)日：2008-02-26

申请号：US10703574

申请日：2003-11-10

申请人： Nobuaki Ueki

发明人： Nobuaki Ueki

IPC分类号： H01S5/00

CPC分类号： H01S5/18341 ,  B82Y20/00 ,  H01S5/18313 ,  H01S5/1835 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/209 ,  H01S5/34313

摘要： A surface emitting semiconductor laser includes a substrate, a first semiconductor multiple layer reflecting mirror formed on the substrate, the reflecting mirror having a semiconductor layer including at least Ga, In and P, an active region formed on the first semiconductor multiple layer reflecting mirror, a second semiconductor multiple layer reflecting mirror formed on the active region, a current confining layer formed between the first and second multiple layer reflecting mirrors, the current confining layer including an oxidized region at a peripheral portion, a first electrode formed at a side of the first semiconductor multiple layer reflecting mirror, and a second electrode formed at a side of the second semiconductor multiple layer reflecting mirror, wherein the first electrode is electrically connected to the semiconductor layer of the first semiconductor multiple layer reflecting mirror.

摘要翻译： 表面发射半导体激光器包括基板，形成在基板上的第一半导体多层反射镜，反射镜具有至少包括Ga，In和P的半导体层，形成在第一半导体多层反射镜上的有源区， 形成在有源区上的第二半导体多层反射镜，形成在第一和第二多层反射镜之间的电流限制层，电流限制层包括在周边部分处的氧化区域，形成在第一和第二多层反射镜一侧的第一电极 第一半导体多层反射镜和形成在第二半导体多层反射镜一侧的第二电极，其中第一电极电连接到第一半导体多层反射镜的半导体层。

公开(公告)号：US20080043793A1

公开(公告)日：2008-02-21

申请号：US11706597

申请日：2007-02-15

申请人： Nobuaki Ueki ,  Naotaka Mukoyama ,  Ryoji Ishii ,  Takeshi Nakamura

发明人： Nobuaki Ueki ,  Naotaka Mukoyama ,  Ryoji Ishii ,  Takeshi Nakamura

IPC分类号： H01S5/183

CPC分类号： H01S5/18311 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/06226 ,  H01L2924/00014

摘要： A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first electrode wiring formed on a main surface of the substrate and electrically connected with the first semiconductor layer, a second electrode wiring formed on the main surface of the substrate and electrically connected with the second semiconductor layer, and a light emitting portion formed on the substrate for emitting laser light. A contact portion at which the first electrode wiring is electrically connected to the first semiconductor layer is formed in a range equal to or greater than π/2 radians and within π radians, centering on the light emitting portion.

摘要翻译： 包括基板的VCSEL，在基板上形成的第一导电型的第一半导体层，形成在第一半导体层上的有源层，形成在有源层上的第二导电型的第二半导体层，第一电极 形成在基板的主表面上并与第一半导体层电连接的布线，形成在基板的主表面上并与第二半导体层电连接的第二电极布线，以及形成在基板上用于发射的发光部分 激光灯。 第一电极布线与第一半导体层电连接的接触部分形成在等于或大于pi / 2弧度的范围内，并且以pi弧度为单位，以发光部分为中心。

公开(公告)号：US20060126077A1

公开(公告)日：2006-06-15

申请号：US11258955

申请日：2005-10-27

申请人： Nobuaki Ueki ,  Kouji Ohtsuka

发明人： Nobuaki Ueki ,  Kouji Ohtsuka

IPC分类号： G01B11/02

CPC分类号： G03F1/84 ,  G01B11/2441

摘要： There are carried out a first measurement operation for measuring the shape of a front surface of a sample held in a held state, a second measurement operation for measuring the shape of a back surface of the sample held in the same state, and a third measurement operation for measuring the shape of the back surface of the sample held so as to cause inverse distortion. First data are acquired on the basis of the front surface shape data obtained through the first measurement operation and the back surface shape data obtained through the second measurement operation. Second data are obtained on the basis of the front surface shape data obtained through the first measurement operation and the back surface shape data obtained through the third measurement operation. Holding distortion is determined on the basis of the first and second data.

摘要翻译： 进行用于测量保持在保持状态的样品的正面的形状的第一测量操作，用于测量保持在相同状态的样品的背面的形状的第二测量操作和第三测量 用于测量保持的样品的背面的形状以产生反变形的操作。 基于通过第一测量操作获得的前表面形状数据和通过第二测量操作获得的背面形状数据获取第一数据。 基于通过第一测量操作获得的前表面形状数据和通过第三测量操作获得的背面形状数据获得第二数据。 基于第一和第二数据确定保持失真。

公开(公告)号：US20050286597A1

公开(公告)日：2005-12-29

申请号：US11159192

申请日：2005-06-23

申请人： Naotaka Mukoyama ,  Nobuaki Ueki

发明人： Naotaka Mukoyama ,  Nobuaki Ueki

IPC分类号： H01S5/00 ,  H01S5/022 ,  H01S5/042 ,  H01S5/183 ,  H01S5/42

CPC分类号： H01S5/02288 ,  H01S5/005 ,  H01S5/02284 ,  H01S5/0421 ,  H01S5/18311 ,  H01S5/18388 ,  H01S5/423 ,  H01S2301/18

摘要： A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a first aperture defining an output region of laser light generated in the active region, and a light confining region being provided between the metallic part and the lower semiconductor reflector, and having a second aperture defining an emission region of the laser light. The upper semiconductor reflector includes a lenticular medium having a convex surface toward the lower semiconductor reflector.

公开(公告)号：US20050036152A1

公开(公告)日：2005-02-17

申请号：US10902389

申请日：2004-07-30

申请人： Nobuaki Ueki

发明人： Nobuaki Ueki

IPC分类号： G01B9/02 ,  G01B11/24 ,  G01J9/02

CPC分类号： G01J9/02 ,  G01B11/2441

摘要： A half mirror 4 divides a luminous flux emitted from a low-coherence light source 1 into two luminous fluxes, a secondary reference plate 6 is held integrally with a reference plate 16, and a secondary sample 8 is held integrally with a sample 17. A first luminous flux which is obtained through dividing by the half mirror 4 is reflected at a mirror 5 and which reaches a secondary reference surface 6a, is reflected at the secondary reference surface 6a, returns along the same optical path, and is transmitted through the half mirror 4. The second luminous flux reaches a secondary sample surface 8a, is reflected at the secondary sample surface 8a, returns along the same optical path, and is combined with the first luminous flux at the half mirror 4. The optical path length difference between the first luminous flux and the second luminous flux coincides with approximately twice the optical distance between a reference surface 16a and a sample surface 17a.

摘要翻译： 半反射镜4将从低相干光源1发射的光束分成两个光束，二次参考板6与参考板16一体地保持，并且次要样品8与样品17一体地保持。 通过半反射镜4分割获得的第一光束在反射镜5处被反射，并且到达第二参考表面6a，在第二参考表面6a处被反射，沿着相同的光路返回，并且透射通过半 第二光通量到达次级样品表面8a，在次级样品表面8a反射，沿着相同的光路返回，并与半反射镜4上的第一光束组合。光程长度差 第一光通量和第二光通量与参考表面16a和样品表面17a之间的光学距离的大约两倍重合。