公开(公告)号：US20070300311A1

公开(公告)日：2007-12-27

申请号：US11702522

申请日：2007-02-06

申请人： Kazumi Hirano ,  Ken Yajima ,  Naoya Okamoto

发明人： Kazumi Hirano ,  Ken Yajima ,  Naoya Okamoto

IPC分类号： G06F21/22

CPC分类号： G06F21/10

摘要： An information processing system includes a first information processing apparatus and a second information processing apparatus. The first information processing apparatus includes storing means configured to store a predetermined content or predetermined software, acquiring means configured to acquire the predetermined content or the predetermined software, and transmitting means configured to transmit the acquired predetermined content or the acquired predetermined software. The second information processing apparatus includes acquiring means configured to acquire rights management information managing the use of the predetermined content or the predetermined software, from a read-only recording medium having the rights management information stored therein, receiving means configured to receive the predetermined content or the predetermined software transmitted from the first information processing apparatus, and executing means configured to reproduce the predetermined content or execute the predetermined software, using the rights management information.

摘要翻译： 信息处理系统包括第一信息处理装置和第二信息处理装置。 第一信息处理装置包括存储装置，被配置为存储预定内容或预定软件，获取装置，被配置为获取预定内容或预定软件，以及发送装置，被配置为发送所获取的预定内容或所获取的预定软件。 第二信息处理装置包括获取装置，被配置为从其中存储有权限管理信息的只读记录介质获取管理预定内容或预定软件的使用的权限管理信息，接收装置被配置为接收预定内容或 从第一信息处理装置发送的预定软件以及被配置为使用权限管理信息再现预定内容或执行预定软件的执行装置。

公开(公告)号：US20070068477A1

公开(公告)日：2007-03-29

申请号：US11515704

申请日：2006-09-05

申请人： Yuji Marui ,  Naoya Okamoto

发明人： Yuji Marui ,  Naoya Okamoto

IPC分类号： F02N3/00 ,  F02F1/00

CPC分类号： B21K1/22 ,  B21J1/06 ,  B23P15/002 ,  F01L3/02

摘要： An engine valve, formed of a titanium alloy, enables improvement of reliability and productivity while improving creep resistance and fatigue strength at a high temperature. The engine valve, including a stem section and a bevel section provided at one end of the stem section, is integrally formed of the titanium alloy. A portion of the valve, extending from the bevel section to a medial portion of the valve stem, is formed mainly of a needle-like crystallographic texture. Another portion of the valve, extending from the medial section to the other end of the stem section, is formed of a material having a substantially equiaxed crystallographic texture. A boundary between the needle-like texture and the equiaxed texture is provided in a range of sliding movement of the valve relative to a valve guide that slidably guides the stem section within the cylinder head.

摘要翻译： 由钛合金形成的发动机阀能够提高可靠性和生产率，同时提高高温下的抗蠕变性和疲劳强度。 发动机阀，包括杆部和设置在杆部的一端的倾斜部，由钛合金一体地形成。 从斜面部分延伸到阀杆的中间部分的阀的一部分主要由针状结构组织形成。 从中间部分延伸到杆部分的另一端的阀的另一部分由具有基本上等轴的结晶织构的材料形成。 针状纹理和等轴织构之间的边界设置在阀相对于阀引导件的滑动运动的范围内，该导向件可滑动地将杆部分引导到气缸盖内。

公开(公告)号：US6071780A

公开(公告)日：2000-06-06

申请号：US285778

申请日：1999-04-05

申请人： Naoya Okamoto ,  Hitoshi Tanaka ,  Naoki Hara

发明人： Naoya Okamoto ,  Hitoshi Tanaka ,  Naoki Hara

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/335 ,  H01L21/336 ,  H01L29/51

CPC分类号： H01L29/517 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/314 ,  H01L21/31604 ,  H01L29/66446 ,  H01L29/66522

摘要： An undoped GaAs layer and a GaAs active layer are formed on a GaAs semiconductor substrate in that order, and a surface of the GaAs active layer is inactivated. Thereafter, a wafer composed of the GaAs semiconductor substrate, the undoped G&As layer and the GaAs active layer is annealed at temperatures ranging from 570 to 580.degree. C. in a molecular beam epitaxy apparatus. Thereafter, the wafer is maintained at temperatures ranging from 350 to 500.degree. C., and an insulating layer made of amorphous GaAs is formed on the GaAs active layer while using tertiary-butyl-gallium-sulfide-cubane "((t-Bu)GaS).sub.4 " as a source of the insulating layer. Thereafter, the insulating layer is patterned according to a photo-lithography method to form a gate insulating layer on the GaAs active layer. Thereafter, a source electrode and a drain electrode are formed on both sides of the gate insulating layer to arrange the source and drain electrodes separated from each other on the GaAs active layer, and a gate electrode is formed on the gate insulating layer.

摘要翻译： 在GaAs半导体衬底上依次形成未掺杂的GaAs层和GaAs有源层，GaAs活性层的表面失活。 然后，在分子束外延装置中，将由GaAs半导体衬底，未掺杂的G＆As层和GaAs有源层构成的晶片在570〜580℃的温度下退火。 此后，将晶片保持在350〜500℃的温度范围内，在GaAs活性层上形成由非晶GaAs形成的绝缘层，同时使用叔丁基硫化镓 - 立方体“（（t-Bu） GaS）4“作为绝缘层的源。 此后，根据光刻法将绝缘层图案化，以在GaAs有源层上形成栅极绝缘层。 然后，在栅极绝缘层的两侧形成源电极和漏电极，在GaAs有源层上排列相互分离的源电极和漏电极，在栅极绝缘层上形成栅电极。

公开(公告)号：US5930611A

公开(公告)日：1999-07-27

申请号：US923599

申请日：1997-09-04

申请人： Naoya Okamoto

发明人： Naoya Okamoto

IPC分类号： H01L21/306 ,  H01L21/28 ,  H01L21/311 ,  H01L21/336 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L29/517 ,  H01L21/28158 ,  H01L21/31111 ,  H01L29/66522 ,  H01L29/78

摘要： A semiconductor device is fabricated by the step of forming a gate insulation film of a GaS film on a compound semiconductor layer; the step of forming an inter-layer insulation film on the gate insulation film; the step of etching the inter-layer insulation film selectively with respect to the gate insulation film by the use of an etchant containing hydrogen fluoride and ammonium fluoride, the step of exposing a prescribed region of the gate insulation film; and the step of forming a gate electrode on the exposed gate insulation film.

摘要翻译： 通过在化合物半导体层上形成GaS膜的栅极绝缘膜的步骤来制造半导体器件; 在栅极绝缘膜上形成层间绝缘膜的步骤; 通过使用含有氟化氢和氟化铵的蚀刻剂相对于栅极绝缘膜选择性地蚀刻层间绝缘膜的步骤，暴露栅极绝缘膜的规定区域的步骤; 以及在暴露的栅极绝缘膜上形成栅电极的步骤。

公开(公告)号：US5920105A

公开(公告)日：1999-07-06

申请号：US16419

申请日：1998-01-30

申请人： Naoya Okamoto ,  Hitoshi Tanaka ,  Naoki Hara

发明人： Naoya Okamoto ,  Hitoshi Tanaka ,  Naoki Hara

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/335 ,  H01L21/336 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L29/517 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/314 ,  H01L21/31604 ,  H01L29/66446 ,  H01L29/66522

摘要： An undoped GaAs layer and a GaAs active layer are formed on a GaAs semiconductor substrate in that order, and a surface of the GaAs active layer is inactivated. Thereafter, a wafer composed of the GaAs semiconductor substrate, the undoped GaAs layer and the GaAs active layer is annealed at temperatures ranging from 570 to 580.degree. C. in a molecular beam epitaxy apparatus. Thereafter, the wafer is maintained at temperatures ranging from 350 to 500.degree. C., and an insulating layer made of amorphous GaAs is formed on the GaAs active layer while using tertiary-butyl-gallium-sulfide-cubane "((t-Bu)GaS).sub.4 " as a source of the insulating layer. Thereafter, the insulating layer is patterned according to a photo-lithography method to form a gate insulating layer on the GaAs active layer. Thereafter, a source electrode and a drain electrode are formed on both sides of the gate insulating layer to arrange the source and drain electrodes separated from each other on the GaAs active layer, and a gate electrode is formed on the gate insulating layer.

摘要翻译： 在GaAs半导体衬底上依次形成未掺杂的GaAs层和GaAs有源层，GaAs活性层的表面失活。 此后，在分子束外延装置中，将由GaAs半导体衬底，未掺杂的GaAs层和GaAs有源层组成的晶片在570〜580℃的温度下退火。 此后，将晶片保持在350〜500℃的温度范围内，在GaAs活性层上形成由非晶GaAs形成的绝缘层，同时使用叔丁基硫化镓 - 立方体“（（t-Bu） GaS）4“作为绝缘层的源。 此后，根据光刻法将绝缘层图案化，以在GaAs有源层上形成栅极绝缘层。 然后，在栅极绝缘层的两侧形成源电极和漏电极，在GaAs有源层上排列相互分离的源电极和漏电极，在栅极绝缘层上形成栅电极。

公开(公告)号：US08977716B2

公开(公告)日：2015-03-10

申请号：US12449278

申请日：2008-01-31

申请人： Naoya Okamoto ,  Ken Onogi ,  Fujio Nobori ,  Seiichi Aoyagi

发明人： Naoya Okamoto ,  Ken Onogi ,  Fujio Nobori ,  Seiichi Aoyagi

IPC分类号： G06F15/16 ,  H04N21/4147 ,  H04N21/254 ,  H04N21/435 ,  H04N21/658 ,  H04N21/81

CPC分类号： H04N21/4147 ,  H04N21/254 ,  H04N21/435 ,  H04N21/6581 ,  H04N21/8173

摘要： The present invention relates to an information processing device, an information processing method, and a program for easily acquiring information. A television receiver accesses an application server and acquires an application list therefrom. When an application is selected from the application list, the television receiver again accesses the application server and acquires the selected application therefrom. While executing a process based on the acquired application, the television receiver accesses a content server as needed and acquires content data therefrom. The acquired application and content data are deleted from a storage unit when an end of the process based on the application is designated. The present invention applies to television receivers which acquire data via a network.

摘要翻译： 信息处理装置，信息处理方法以及用于容易地获取信息的程序技术领域本发明涉及一种信息处理装置， 电视接收机访问应用服务器并从中获取应用列表。 当从应用程序列表中选择应用程序时，电视接收机再次访问应用服务器并从中获取所选择的应用程序。 在执行基于所获取的应用的处理的同时，电视接收机根据需要访问内容服务器并从其获取内容数据。 当指定基于应用的处理结束时，从存储单元中删除所获取的应用和内容数据。 本发明适用于通过网络获取数据的电视接收机。

公开(公告)号：US08875056B2

公开(公告)日：2014-10-28

申请号：US12804806

申请日：2010-07-29

申请人： Ken Onogi ,  Koichi Tashiro ,  Naoya Okamoto

发明人： Ken Onogi ,  Koichi Tashiro ,  Naoya Okamoto

IPC分类号： G06F3/048 ,  H04N21/431 ,  H04N5/445 ,  H04N21/4402 ,  H04N21/84 ,  H04N21/81 ,  H04N21/45 ,  H04N21/422 ,  H04N21/472 ,  H04N21/466 ,  H04N21/6543

CPC分类号： H04N5/44543 ,  H04N21/42222 ,  H04N21/4312 ,  H04N21/4316 ,  H04N21/440263 ,  H04N21/4532 ,  H04N21/4668 ,  H04N21/47217 ,  H04N21/6543 ,  H04N21/8153 ,  H04N21/84

摘要： Provided is a display device including a display mode controller for controlling a transition to a whole screen display mode for displaying an image in an entire screen of a display section, a multiple content display mode for displaying, on the screen, multiple thumbnail images related to contents, or a panel display mode for displaying, on the screen, a panel on which information related to the contents is displayed, an arrangement determination section for arranging multiple thumbnail images displayed in the multiple content display mode by category to which the contents belong, an arrangement change section for changing an arrangement of multiple thumbnail images by a user, and a boundary line display section for displaying, between two thumbnail images, a boundary line indicating a difference of the category before the arrangement of the thumbnail images is changed by the user, and for not displaying the boundary line after changed.

摘要翻译： 提供了一种显示装置，其包括显示模式控制器，用于控制向整个屏幕显示模式转换以在显示部分的整个屏幕中显示图像;多内容显示模式，用于在屏幕上显示与 内容或面板显示模式，用于在屏幕上显示与显示内容相关的信息的面板，布置确定部分，用于根据内容所属类别排列以多内容显示模式显示的多个缩略图， 用于改变用户对多个缩略图图像的布置的布置改变部分和边界线显示部分，用于在两个缩略图图像之间显示表示缩略图像的排列之前的类别的差异的边界线， 用户，更改后不显示边界线。

公开(公告)号：US08704273B2

公开(公告)日：2014-04-22

申请号：US12793160

申请日：2010-06-03

申请人： Naoya Okamoto ,  Atsushi Yamada

发明人： Naoya Okamoto ,  Atsushi Yamada

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/66462 ,  H01L29/7783

摘要： A semiconductor device includes a nitride semiconductor layer having a (0001) face and a (000-1) face, formed above a common substrate; a (0001) face forming layer provided partially between the substrate and the nitride semiconductor layer; a source electrode, a drain electrode, and a gate electrode, provided on the nitride semiconductor layer having the (0001) face; and a hole extracting electrode provided on the nitride semiconductor layer having the (000-1) face.

摘要翻译： 半导体器件包括形成在公共衬底上的（0001）面和（000-1）面的氮化物半导体层; （0001）面形成层，部分地设置在所述衬底和所述氮化物半导体层之间; 设置在具有（0001）面的氮化物半导体层上的源电极，漏电极和栅电极; 以及设置在具有（000-1）面的氮化物半导体层上的空穴提取电极。

公开(公告)号：US08633466B2

公开(公告)日：2014-01-21

申请号：US13371823

申请日：2012-02-13

申请人： Naoya Okamoto

发明人： Naoya Okamoto

IPC分类号： H01L29/06

CPC分类号： H01L29/872 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/3083 ,  H01L29/0615 ,  H01L29/2003 ,  H01L29/66143 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2924/00 ,  H01L2924/00014

摘要： A compound semiconductor device includes: a substrate; a first compound semiconductor layer formed over the substrate; a second compound semiconductor layer formed over the first compound semiconductor layer; and an upper electrode formed over the first compound semiconductor layer, wherein two-dimensional hole gas is generated in a region of the first compound semiconductor layer, the region being located at an interface between the first compound semiconductor layer and the second compound semiconductor layer, so as to have a hole concentration that decreases with increasing distance from the upper electrode.

摘要翻译： 一种化合物半导体器件，包括：衬底; 形成在所述基板上的第一化合物半导体层; 形成在所述第一化合物半导体层上的第二化合物半导体层; 以及形成在所述第一化合物半导体层上的上电极，其中在所述第一化合物半导体层的区域中产生二维空穴气体，所述区域位于所述第一化合物半导体层和所述第二化合物半导体层之间的界面处， 以便具有随着与上电极的距离的增加而减小的空穴浓度。

公开(公告)号：US08003525B2

公开(公告)日：2011-08-23

申请号：US12146946

申请日：2008-06-26

申请人： Naoya Okamoto

发明人： Naoya Okamoto

IPC分类号： H01L21/4763

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66462 ,  H01L2924/0002 ,  H01L2924/00

摘要： A GaN layer and an n-type AlGaN layer are formed over an insulating substrate, and thereafter, a gate electrode, a source electrode and a drain electrode are formed on them. Next, an opening reaching at least a surface of the insulating substrate is formed in the source electrode, the GaN layer and the n-type AlGaN layer. Then, a nickel (Ni) layer is formed in the opening. Thereafter, by conducting dry etching from the back side while making the nickel (Ni) layer serve as an etching stopper, a via hole reaching the nickel (Ni) layer is formed in the insulating substrate. Then, a via wiring is formed extending from an inside the via hole to the back surface of the insulating substrate.

摘要翻译： 在绝缘基板上形成GaN层和n型AlGaN层，之后在其上形成栅电极，源电极和漏电极。 接下来，在源电极，GaN层和n型AlGaN层中形成至少到达绝缘基板的表面的开口。 然后，在开口中形成镍（Ni）层。 此后，通过在使镍（Ni）层用作蚀刻停止件的同时从背面进行干蚀刻，在绝缘基板中形成到达镍（Ni）层的通孔。 然后，形成从通孔内侧向绝缘基板的背面延伸的通孔布线。