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    Method for producing optoelectronic semiconductor chips, and optoelectronic semiconductor chip
    21.
    发明授权
    Method for producing optoelectronic semiconductor chips, and optoelectronic semiconductor chip 有权

    公开(公告)号：US12224379B2

    公开(公告)日：2025-02-11

    申请号：US17765657

    申请日：2020-09-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Felix Feix ,  Ines Pietzonka ,  Petrus Sundgren

    IPC: H01L33/30 ,  H01L25/075 ,  H01L33/00 ,  H01L33/06

    Abstract: In an embodiment a method for producing optoelectronic semiconductor chips includes A) growing an AlInGaAsP semiconductor layer sequence on a growth substrate along a growth direction, wherein the semiconductor layer sequence includes an active zone for radiation generation, and wherein the active zone is composed of a plurality of alternating quantum well layers and barrier layers, B) generating a structured masking layer, C) regionally intermixing the quantum well layers and the barrier layers by applying an intermixing auxiliary through openings of the masking layer into the active zone in at least one intermixing region and D) singulating the semiconductor layer sequence into sub-regions for the semiconductor chips, wherein the barrier layers in A) are grown from [(AlxGa1-x)yIn1-y]zP1-z with x≥0.5, and wherein the quantum well layers are grown in A) from [(AlaGa1-a)bIn1-b]cP1-c with o

    COMPONENT WITH REDUCED ABSORPTION AND METHOD FOR PRODUCING A COMPONENT
    24.
    发明申请
    COMPONENT WITH REDUCED ABSORPTION AND METHOD FOR PRODUCING A COMPONENT 有权

    公开(公告)号：US20220320399A1

    公开(公告)日：2022-10-06

    申请号：US17632892

    申请日：2020-07-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Tansen Varghese ,  Petrus Sundgren

    IPC: H01L33/62 ,  H01L33/00 ,  H01L33/08

    Abstract: The invention relates to a component comprising a substrate, a semiconductor element arranged on the substrate, an intermediate layer arranged at least in sections between the substrate and the semiconductor element, and a first contact structure, wherein the semiconductor element has a first semiconductor layer, a second semiconductor layer and an active zone, which is arranged in a vertical direction between the semiconductor layers and designed for generating electromagnetic radiation. The active zone has locally deactivated regions along lateral directions, which are not designed for generating electromagnetic radiation. The semiconductor element has an opening which extends through the second semiconductor layer and the active zone to the first semiconductor layer, wherein the opening is different from the deactivated regions of the active zone and is partially filled with a material of the intermediate layer. In addition, the first contact structure is designed for electrically contacting the first semiconductor layer and overlaps with the opening when viewed from above. The invention also relates to a method for producing a component of this type.

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