公开(公告)号：US10418785B2

公开(公告)日：2019-09-17

申请号：US16194914

申请日：2018-11-19

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer ,  Noble M. Johnson

IPC: H01S5/00 ,  H01S5/32 ,  H01S5/343 ,  H01S5/04 ,  H01S5/125 ,  H01S5/30 ,  H01L33/16 ,  H01L33/32 ,  H01S5/323 ,  H01S5/02 ,  H01L33/10

Abstract: An ultraviolet (UV) radiation emitting device includes an epitaxial heterostructure comprising an AlGaInN active region. The AlGaInN active region includes one or more quantum well structures with Al content greater than about 50% and having a non-c-plane crystallographic growth orientation. The AlGaInN active region is configured to generate UV radiation in response to excitation by an electron beam generated by an electron beam pump source.

公开(公告)号：US10249786B2

公开(公告)日：2019-04-02

申请号：US15363050

申请日：2016-11-29

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Max Batres ,  Zhihong Yang ,  Thomas Wunderer

IPC: H01L33/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/78 ,  H01L29/20 ,  H01L29/32 ,  H01L33/02 ,  H01L33/32 ,  H01S5/183 ,  H01S5/323

Abstract: A method of thinning a bulk aluminum nitride substrate includes providing a bulk aluminum nitride (AlN) substrate with at least one epitaxially grown group-III-nitride layer on a first side of the substrate, applying a slurry having a high pH to a second side of the substrate opposite the first side, chemical mechanically polishing the second side of the substrate using the slurry to remove at least a portion of the substrate, resulting in a thinned layer with a thickness less than 50 microns, and bonding the epitaxial layer to a non-native substrate. A device has at least one active zone in a layer of epitaxial Group-III-nitride material, the epitaxial Group-III-nitride layer having a defect density of less than or equal to 108/cm2.

公开(公告)号：US10153616B2

公开(公告)日：2018-12-11

申请号：US15646716

申请日：2017-07-11

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer ,  Noble M. Johnson ,  John E. Northrup

IPC: H01S5/343 ,  H01S5/024 ,  H01S5/04 ,  H01S5/14 ,  H01S5/327 ,  B82Y20/00 ,  H01S5/30 ,  H01S5/32 ,  H01S5/183 ,  H01S3/109 ,  H01S5/022

Abstract: A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λlase, in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.

公开(公告)号：US10008629B2

公开(公告)日：2018-06-26

申请号：US15012502

申请日：2016-02-01

Applicant: Palo Alto Research Center Incorporated

Inventor： John E. Northrup ,  Christopher L. Chua ,  Michael A. Kneissl ,  Thomas Wunderer ,  Noble M. Johnson

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/04

CPC classification number: H01L33/0025 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/32

Abstract: Light emitting devices having an enhanced degree of polarization, PD, and methods for fabricating such devices are described. A light emitting device may include a light emitting region that is configured to emit light having a central wavelength, λ, and a degree of polarization, PD, where PD>0.006λ−b for 200 nm≤λ≤400 nm, wherein b≤1.5.

公开(公告)号：US09490119B2

公开(公告)日：2016-11-08

申请号：US14283392

申请日：2014-05-21

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer

IPC: H01L21/02 ,  H01L29/20

CPC classification number: H01L33/12 ,  H01L21/02458 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02664 ,  H01L21/7813 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/7787 ,  H01L29/8613 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01S5/0421 ,  H01S5/183 ,  H01S5/187 ,  H01S5/34333

Abstract: A thin film device described herein includes a first thin film layer, a second film layer and a heterostructure within the second film layer. The first thin film layer is atop a substrate. The second thin film layer is grown from the first thin film layer through a patterned mask, having openings, under selective area growth (SAG) conditions. The second thin film layer is configured to be released from the first thin film layer by etching a trench. The etched trench may provide access to the patterned mask and the patterned mask may be eliminated with a wet etchant.

Abstract translation: 本文所述的薄膜器件包括第一薄膜层，第二膜层和第二膜层内的异质结构。 第一薄膜层位于基底之上。 在选择性面积生长（SAG）条件下，第二薄膜层通过具有开口的图案化掩模从第一薄膜层生长。 第二薄膜层被配置为通过蚀刻沟槽从第一薄膜层释放。 蚀刻的沟槽可以提供对图案化掩模的访问，并且可以用湿蚀刻剂去除图案化掩模。

公开(公告)号：US09444224B2

公开(公告)日：2016-09-13

申请号：US14563847

申请日：2014-12-08

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Christopher L. Chua ,  Thomas Wunderer ,  Zhihong Yang

IPC: H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S5/20

CPC classification number: H01S5/30 ,  H01S5/2031 ,  H01S5/3013 ,  H01S5/309 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/32341 ,  H01S5/34333

Abstract: An ultraviolet laser diode having multiple portions in the n-cladding layer is described herein. The laser diode comprises a p-cladding layer, an n-cladding layer, a waveguide, and a light-emitting region. The n-cladding layer includes at least a first portion and a second portion. The first portion maintains material quality of the laser diode, while the second portion pulls the optical mode from the p-cladding layer toward the active region. The first portion may have a higher aluminum composition than the second portion. The waveguide is coupled to the n-cladding layer and the light-emitting region is coupled to the waveguide. The light-emitting region is located between the n-cladding layer and the p-cladding layer. Other embodiments are also described.

Abstract translation: 本文描述了在n包层中具有多个部分的紫外激光二极管。 激光二极管包括p包层，n包层，波导和发光区域。 n包层至少包括第一部分和第二部分。 第一部分保持激光二极管的材料质量，而第二部分将光学模式从p包覆层拉向有源区。 第一部分可以具有比第二部分更高的铝组成。 波导耦合到n包层，并且发光区域耦合到波导。 发光区域位于n包层和p包层之间。 还描述了其它实施例。

公开(公告)号：US20160049771A1

公开(公告)日：2016-02-18

申请号：US14828207

申请日：2015-08-17

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer ,  Noble M. Johnson ,  John E. Northrup

IPC: H01S5/343 ,  H01S5/183 ,  H01S5/30 ,  H01S5/04 ,  H01S5/327 ,  H01S5/32

CPC classification number: H01S5/343 ,  B82Y20/00 ,  H01S3/109 ,  H01S5/0222 ,  H01S5/02461 ,  H01S5/04 ,  H01S5/14 ,  H01S5/183 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/1838 ,  H01S5/18383 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3222 ,  H01S5/327 ,  H01S5/34333

Abstract: A vertical external cavity surface emitting laser (VECSEL) structure includes a heterostructure and first and second reflectors. The heterostructure comprises an active region having one or more quantum well structures configured to emit radiation at a wavelength, λlase, in response to pumping by an electron beam. One or more layers of the heterostructure may be doped. The active region is disposed between the first reflector and the second reflector and is spaced apart from the first reflector by an external cavity. An electron beam source is configured to generate the electron beam directed toward the active region. At least one electrical contact is electrically coupled to the heterostructure and is configured to provide a current path between the heterostructure and ground.

Abstract translation: 垂直外腔表面发射激光器（VECSEL）结构包括异质结构和第一和第二反射器。 异质结构包括具有一个或多个量子阱结构的有源区域，其被配置为响应于电子束的泵浦而以波长λlase发射辐射。 可以掺杂一个或多个异质结构层。 有源区域设置在第一反射器和第二反射器之间，并且通过外部空腔与第一反射器间隔开。 电子束源被配置为产生朝向有源区域的电子束。 至少一个电触点电耦合到异质结构并且被配置为提供异质结构和地之间的电流路径。

公开(公告)号：US20240097072A1

公开(公告)日：2024-03-21

申请号：US17941192

申请日：2022-09-09

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Max Batres ,  Thomas Wunderer

IPC: H01L33/32 ,  H01L21/02

CPC classification number: H01L33/32 ,  H01L21/02013 ,  H01L21/02019 ,  H01L21/0254

Abstract: A semiconductor device is formed on a bulk substrate of n-type GaN. The semiconductor device has a material layer grown on the bulk substrate. A first surface of the bulk substrate facing away from the material layer is mechanically roughened and a negative electrical contact is formed on the roughened surface using a low work function metal.

公开(公告)号：US11912013B2

公开(公告)日：2024-02-27

申请号：US17152597

申请日：2021-01-19

Applicant: Xerox Corporation ,  Palo Alto Research Center Incorporated

Inventor： Kathryn F. Murphy ,  Thomas Wunderer ,  Anne Plochowietz ,  David K. Biegelsen ,  Joerg Martini ,  David Mathew Johnson ,  Palghat S. Ramesh

IPC: B41F31/02 ,  B41M1/06 ,  B41F33/00 ,  B41F7/02 ,  B41F3/34 ,  B41F7/32 ,  B41F7/30

CPC classification number: B41F31/02 ,  B41F3/34 ,  B41F7/02 ,  B41F7/30 ,  B41F7/32 ,  B41F33/00 ,  B41M1/06

Abstract: Ink-based digital printing systems useful for ink printing include a rotatable charge-retentive reimageable surface layer configured to receive a layer of fountain solution. The fountain solution is carried to the charge retentive surface by a fog or mist including fountain solution aerosol particles, dispersed gas particles, and charge directors that impart charge to the fountain solution aerosol particles. The charge-retentive reimageable surface may be charged to a uniform potential, and selectively discharged using an ROS according to image data to form an electrostatic latent image. The charged fountain solution adheres to portions of the charge-retentive reimageable surface according to the electrostatic latent image to form a fountain solution image thereon. The fountain solution image can be partially transferred to an imaging blanket, where the fountain solution image is inked. The resulting ink image may be transferred to a print substrate.

公开(公告)号：US20220005938A1

公开(公告)日：2022-01-06

申请号：US16920249

申请日：2020-07-02

Applicant: Palo Alto Research Center Incorporated

Inventor： Thomas Wunderer ,  Jengping Lu ,  Noble M. Johnson

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/778

Abstract: A transistor includes a first layer comprising a group III-nitride semiconductor. A second layer comprising a group III-nitride semiconductor is disposed over the first layer. A third layer comprising a group III-nitride semiconductor is disposed over the second layer. An interface between the second layer and the third layer form a polarization heterojunction. A fourth layer comprising a group III-nitride semiconductor is disposed over the third layer. An interface between the third layer and the fourth layer forms a pn junction. A first electrical contact pad is disposed on the fourth layer. A second electrical contact pad is disposed on the third layer. A third electrical contact pad is electronically coupled to bias the polarization heterojunction.