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    OPTICAL STABILIZATION TECHNIQUES INCORPORATING PIXEL CURRENT MEASUREMENTS
    22.
    发明公开
    OPTICAL STABILIZATION TECHNIQUES INCORPORATING PIXEL CURRENT MEASUREMENTS 审中-公开

    公开(公告)号：US20240133809A1

    公开(公告)日：2024-04-25

    申请号：US18490713

    申请日：2023-10-18

    申请人： Quantum-Si Incorporated

    发明人： Todd Rearick ,  Shannon Stewman

    IPC分类号： G01N21/64 ,  H01L27/146

    CPC分类号： G01N21/64 ,  H01L27/14625 ,  H01L27/14643

    摘要： Described herein are techniques for determining an illumination position on an integrated photodetector, as may be used within a fluorescence detection system. In some embodiments, such techniques may include determining an illumination position on an integrated photodetector based, at least in part, on a measurement of an amount of current output from a pixel of the integrated photodetector, the amount of current corresponding to an amount of excitation light (e.g., used for exciting fluorescence in a sample) that is received at the pixel. In some embodiments, such techniques may include measuring an amount of current output from one or more drain regions of one or more pixels of an integrated photodetector (e.g., regions used to draw away charge carriers corresponding to excitation light so as to not pollute collected charge carriers that correspond to fluorescence light to be detected).

    INTEGRATED SENSOR FOR LIFETIME CHARACTERIZATION
    23.
    发明公开
    INTEGRATED SENSOR FOR LIFETIME CHARACTERIZATION 审中-公开

    公开(公告)号：US20240096924A1

    公开(公告)日：2024-03-21

    申请号：US18520502

    申请日：2023-11-27

    申请人： Quantum-Si Incorporated

    发明人： Eric A.G. Webster ,  Changhoon Choi ,  Dajiang Yang ,  Xin Wang ,  Todd Rearick ,  Kyle Preston ,  Ali Kabiri ,  Gerard Schmid

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14643 ,  H01L27/14683

    摘要： Aspects of the technology described herein relate to improved semiconductor-based image sensor designs. In some embodiments, an integrated circuit may comprise a photodetection region and a drain region electrically coupled to the photodetection region, and the photodetection region may be configured to induce an intrinsic electric field in a direction from the photodetection region to the drain region(s). In some embodiments, a charge storage region and the drain region may be positioned on a same side of the photodetection region. In some embodiments, at least one drain layer may be configured to receive incident photons and/or charge carriers via the photodetection region. In some embodiments, an integrated circuit may comprise a plurality of pixels and a control circuit configured to control a transfer of charge carriers in the plurality of pixels.

    SENSOR FOR LIFETIME PLUS SPECTRAL CHARACTERIZATION
    29.
    发明申请
    SENSOR FOR LIFETIME PLUS SPECTRAL CHARACTERIZATION 有权

    公开(公告)号：US20210215605A1

    公开(公告)日：2021-07-15

    申请号：US17149310

    申请日：2021-01-14

    申请人： Quantum-Si Incorporated

    发明人： Gerard Schmid ,  Dajiang Yang ,  Eric A.G. Webster ,  Xin Wang ,  Todd Rearick ,  Changhoon Choi ,  Ali Kabiri ,  Kyle Preston

    IPC分类号： G01N21/64

    摘要： Some aspects relate to integrated devices for obtaining timing and/or spectral information from incident light. In some embodiments, a pixel may include one or more charge storage regions configured to receive charge carriers generated responsive to incident photons from a light source, with charge carriers stored in the charge storage region(s) indicative of spectral and timing information. In some embodiments, a pixel may include regions having different depths, each configured to generate charge carriers responsive to incident photons. In some embodiments, a pixel may include multiple charge storage regions having different depths, and one or more of the charge storage regions may be configured to receive the incident photons and generate charge carriers therein. In some embodiments, a pixel may include an optical sorting element configured to direct at least some incident photons to one charge storage region and other incident photons to another charge storage region.

    INTEGRATED PHOTODETECTOR WITH CHARGE STORAGE BIN OF VARIED DETECTION TIME
    30.
    发明申请
    INTEGRATED PHOTODETECTOR WITH CHARGE STORAGE BIN OF VARIED DETECTION TIME 审中-公开

    公开(公告)号：US20190391010A1

    公开(公告)日：2019-12-26

    申请号：US16446708

    申请日：2019-06-20

    申请人： Quantum-Si Incorporated

    发明人： Tom Thurston ,  Benjamin Cipriany ,  Joseph D. Clark ,  Todd Rearick ,  Keith G. Fife

    IPC分类号： G01J1/44

    摘要： An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes a charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.