公开(公告)号：US20180053540A1

公开(公告)日：2018-02-22

申请号：US15665304

申请日：2017-07-31

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Kyung Suk Oh

IPC: G11C7/22 ,  G11C29/02

CPC classification number: G11C7/22 ,  G11C5/025 ,  G11C5/04 ,  G11C5/06 ,  G11C5/063 ,  G11C7/18 ,  G11C11/4063 ,  G11C11/4097 ,  G11C29/02 ,  G11C29/022 ,  G11C29/025 ,  G11C29/028

Abstract: A system has a plurality of memory devices arranged in a fly-by topology, each having on-die termination (ODT) circuitry for connecting to an address and control (RQ) bus. The ODT circuitry of each memory device includes a set of one or more control registers for controlling on-die termination of one or more signal lines of the RQ bus. A first memory device includes a first set of one or more control registers storing a first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the first memory device, and a second memory device includes a second set of one or more control registers storing a second ODT value different from the first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the second memory device.

公开(公告)号：US09881662B2

公开(公告)日：2018-01-30

申请号：US15406373

申请日：2017-01-13

Applicant: Rambus Inc.

Inventor： Thomas J. Giovannini ,  Alok Gupta ,  Ian Shaeffer ,  Steven C. Woo

IPC: G06F12/00 ,  G11C11/4076 ,  G06F3/06 ,  G06F5/06 ,  G06F1/08 ,  G11C7/10 ,  G06F13/16 ,  G06F12/06 ,  G11C11/409 ,  G11C11/4096

CPC classification number: G11C11/4076 ,  G06F1/08 ,  G06F3/0629 ,  G06F3/0634 ,  G06F5/06 ,  G06F12/0646 ,  G06F13/1689 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/1093 ,  G11C11/409 ,  G11C11/4096 ,  G11C2207/2254

Abstract: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.

公开(公告)号：US09858216B2

公开(公告)日：2018-01-02

申请号：US15173932

申请日：2016-06-06

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Ian Shaeffer

IPC: G06F12/00 ,  G06F13/00 ,  G06F13/16 ,  G06F3/06 ,  G11C11/4076 ,  G11C11/409 ,  G11C11/4093

CPC classification number: G06F13/1689 ,  G06F3/061 ,  G06F3/0659 ,  G06F3/0683 ,  G11C11/4076 ,  G11C11/409 ,  G11C11/4093 ,  Y02D10/14

Abstract: A memory system includes a memory controller coupled to multiple memory devices. Each memory device includes an oscillator that generates an internal reference signal that oscillates at a frequency that is a function of physical device structures within the memory device. The frequencies of the internal reference signals are thus device specific. Each memory device develops a shared reference signal from its internal reference signal and communicates the shared reference signal to the common memory controller. The memory controller uses the shared reference signals to recover device-specific frequency information from each memory device, and then communicates with each memory device at a frequency compatible with the corresponding internal reference signal.

公开(公告)号：US09734879B2

公开(公告)日：2017-08-15

申请号：US14813028

申请日：2015-07-29

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Lawrence Lai ,  Fan Ho ,  David A. Secker ,  Wayne S. Richardson ,  Akash Bansal ,  Brian S. Leibowitz ,  Kyung Suk Oh

IPC: G11C5/06 ,  G11C8/12 ,  G11C5/02 ,  G11C8/18 ,  G11C5/04 ,  G11C7/10 ,  H01L23/00 ,  H01L25/065

CPC classification number: G11C8/12 ,  G11C5/02 ,  G11C5/04 ,  G11C5/06 ,  G11C5/063 ,  G11C7/1012 ,  G11C7/1045 ,  G11C8/18 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/49171 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00

Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.

公开(公告)号：US20170200489A1

公开(公告)日：2017-07-13

申请号：US15406373

申请日：2017-01-13

Applicant: Rambus Inc.

Inventor： Thomas J. Giovannini ,  Alok Gupta ,  Ian Shaeffer ,  Steven C. Woo

IPC: G11C11/4076 ,  G11C11/4096

CPC classification number: G11C11/4076 ,  G06F1/08 ,  G06F3/0629 ,  G06F3/0634 ,  G06F5/06 ,  G06F12/0646 ,  G06F13/1689 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/1093 ,  G11C11/409 ,  G11C11/4096 ,  G11C2207/2254

Abstract: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.

公开(公告)号：US09703503B2

公开(公告)日：2017-07-11

申请号：US14509572

申请日：2014-10-08

Applicant: RAMBUS INC.

Inventor： Ian Shaeffer ,  Frederick Ware ,  Craig E. Hampel

IPC: G06F3/06 ,  G06F13/16 ,  G11C7/22

CPC classification number: G06F3/0634 ,  G06F3/0665 ,  G06F3/0689 ,  G06F13/1694 ,  G06F2212/262 ,  G11C7/22

Abstract: In a reconfigurable data strobe-based memory system, data strobes may be re-tasked in different modes of operation. For example, in one mode of operation a differential data strobe may be used as a timing reference for a given set of data signals. In a second mode of operation, one of the components of the differential data strobe may be used as a timing reference for a first portion of the set of data signals and the other component used as a timing reference for a second portion of the set of data signals. Different data mask-related schemes also may be invoked for different modes of operation. For example, in a first mode of operation a memory controller may generate a data mask signal to prevent a portion of a set of data from being written to a memory array. Then, in a second mode of operation the memory controller may invoke a coded value replacement scheme or a data strobe transition inhibition scheme to prevent a portion of a set of data from being written to a memory array.

公开(公告)号：US20170004099A1

公开(公告)日：2017-01-05

申请号：US15173932

申请日：2016-06-06

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Ian Shaeffer

IPC: G06F13/16 ,  G11C11/4093 ,  G06F3/06 ,  G11C11/409 ,  G11C11/4076

CPC classification number: G06F13/1689 ,  G06F3/061 ,  G06F3/0659 ,  G06F3/0683 ,  G11C11/4076 ,  G11C11/409 ,  G11C11/4093 ,  Y02D10/14

Abstract: A memory system includes a memory controller coupled to multiple memory devices. Each memory device includes an oscillator that generates an internal reference signal that oscillates at a frequency that is a function of physical device structures within the memory device. The frequencies of the internal reference signals are thus device specific. Each memory device develops a shared reference signal from its internal reference signal and communicates the shared reference signal to the common memory controller. The memory controller uses the shared reference signals to recover device-specific frequency information from each memory device, and then communicates with each memory device at a frequency compatible with the corresponding internal reference signal.

Abstract translation: 存储器系统包括耦合到多个存储器件的存储器控​​制器。 每个存储器件包括产生内部参考信号的振荡器，该内部参考信号以存储器件内的物理器件结构的函数的频率振荡。 因此，内部参考信号的频率是器件特定的。 每个存储器件从其内部参考信号产生共享参考信号，并将共享参考信号传送到公共存储器控制器。 存储器控制器使用共享参考信号从每个存储器件恢复器件特定的频率信息，然后以与相应的内部参考信号兼容的频率与每个存储器件通信。

公开(公告)号：US09502085B2

公开(公告)日：2016-11-22

申请号：US14672442

申请日：2015-03-30

Applicant: Rambus Inc.

Inventor： Ian Shaeffer

IPC: G11C7/10 ,  G11C5/04

CPC classification number: G06F3/0659 ,  G06F3/0611 ,  G06F3/0679 ,  G06F12/00 ,  G06F13/4273 ,  G11C5/04 ,  G11C7/10 ,  G11C7/1075 ,  Y02D10/14 ,  Y02D10/151

Abstract: A memory module comprises a module interface having module data-group ports to communicate data as respective data groups, a command port to receive memory-access commands, a first memory device including a first device data-group port, a second memory device including a second device data-group port, and a signal buffer coupled between the module interface and each of the first and second devices. In a first mode, in response to the memory-access commands, the signal buffer communicates the data group associated with each of the first and second device data-group ports via a respective one of the module data-group ports. In a second mode, in response to the memory-access commands, the signal buffer alternatively communicates the data group associated with the first device data-group port or the data group associated with the second device data-group port via the same one of the module data-group ports.

公开(公告)号：US09299407B2

公开(公告)日：2016-03-29

申请号：US14613270

申请日：2015-02-03

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Kyung Suk Oh

IPC: G11C5/06 ,  G11C7/22 ,  G11C29/02 ,  G11C11/4063 ,  G11C5/04 ,  G11C11/4097 ,  G11C7/18 ,  G11C5/02

CPC classification number: G11C7/22 ,  G11C5/025 ,  G11C5/04 ,  G11C5/06 ,  G11C5/063 ,  G11C7/18 ,  G11C11/4063 ,  G11C11/4097 ,  G11C29/02 ,  G11C29/022 ,  G11C29/025 ,  G11C29/028

Abstract: A system has a plurality of memory devices arranged in a fly-by topology, each having on-die termination (ODT) circuitry for connecting to an address and control (RQ) bus. The ODT circuitry of each memory device includes a set of one or more control registers for controlling on-die termination of one or more signal lines of the RQ bus. A first memory device includes a first set of one or more control registers storing a first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the first memory device, and a second memory device includes a second set of one or more control registers storing a second ODT value different from the first ODT value, for controlling termination of one or more signal lines of the RQ bus by the ODT circuitry of the second memory device.

Abstract translation: 系统具有以飞越拓扑布置的多个存储器件，每个存储器件具有用于连接到地址和控制（RQ）总线的片上终端（ODT）电路。 每个存储器件的ODT电路包括一组一个或多个控制寄存器，用于控制RQ总线的一个或多个信号线的管芯端接。 第一存储器件包括存储第一ODT值的一个或多个控制寄存器的第一组，用于控制由第一存储器件的ODT电路终止RQ总线的一个或多个信号线，第二存储器器件包括： 存储与第一ODT值不同的第二ODT值的一个或多个控制寄存器的第二组，用于控制由第二存储器件的ODT电路终止RQ总线的一个或多个信号线。

公开(公告)号：US09275699B2

公开(公告)日：2016-03-01

申请号：US13952530

申请日：2013-07-26

Applicant: Rambus Inc.

Inventor： Liji Gopalakrishnan ,  Ian Shaeffer ,  Yi Lu

IPC: G06F12/02 ,  G11C7/10 ,  G11C11/4093 ,  G11C11/4094 ,  G11C5/04 ,  G11C11/4096

CPC classification number: G06F13/4068 ,  G06F13/1673 ,  G06F13/1678 ,  G11C5/04 ,  G11C7/1012 ,  G11C7/1039 ,  G11C7/1045 ,  G11C7/1075 ,  G11C11/4093 ,  G11C11/4094 ,  G11C11/4096 ,  Y02D10/14 ,  Y02D10/151

Abstract: A memory device or module selects between alternative command ports. Memory systems with memory modules incorporating such memory devices support point-to-point connectivity and efficient interconnect usage for different numbers of modules. The memory devices and modules can be of programmable data widths. Devices on the same module can be configured select different command ports to facilitate memory threading. Modules can likewise be configured to select different command ports for the same purpose.

Abstract translation: 存储器件或模块在可选命令端口之间进行选择。 具有内存模块的内存系统包含这种内存设备，可支持点对点连接和不同数量模块的高效互连使用。 存储器件和模块可以是可编程的数据宽度。 同一模块上的设备可以配置为选择不同的命令端口，以便于内存线程化。 模块同样可以配置为为同一目的选择不同的命令端口。