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公开(公告)号:US11378998B2
公开(公告)日:2022-07-05
申请号:US17102119
申请日:2020-11-23
申请人: Rambus Inc.
发明人: Jun Kim , Pak Shing Chau , Wayne S. Richardson
IPC分类号: G06F1/00 , G06F1/08 , H03L7/099 , H04L7/00 , H03L7/081 , H03L7/07 , H04L7/10 , G06F13/16 , G06F1/10
摘要: A memory system in which a timing drift that would occur in distribution of a first timing signal for data transport in a memory device is determined by measuring the actual phase delays occurring in a second timing signal that has a frequency lower than that of the first timing signal and is distributed in one or more circuits mimicking the drift characteristics of at least a portion of distribution of the first timing signal. The actual phase delays are determined in the memory device and provided to a memory controller so that the phases of the timing signals used for data transport may be adjusted based on the determined timing drift.
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公开(公告)号:US11250901B2
公开(公告)日:2022-02-15
申请号:US17103374
申请日:2020-11-24
申请人: Rambus Inc.
发明人: Wayne F. Ellis , Wayne S. Richardson , Akash Bansal , Frederick A. Ware , Lawrence Lai , Kishore Ven Kasamsetty
IPC分类号: G11C7/00 , G11C11/406 , G11C7/02 , G11C7/20 , G11C11/4072 , G11C29/02 , G06F1/3234 , G11C11/4074
摘要: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.
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公开(公告)号:US20210050043A1
公开(公告)日:2021-02-18
申请号:US16987157
申请日:2020-08-06
申请人: Rambus Inc.
发明人: Ian Shaeffer , Lawrence Lai , Fan Ho , David A. Secker , Wayne S. Richardson , Akash Bansal , Brian S. Leibowitz , Kyung Suk Oh
摘要: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.
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公开(公告)号:US20190339908A1
公开(公告)日:2019-11-07
申请号:US16405479
申请日:2019-05-07
申请人: Rambus Inc.
IPC分类号: G06F3/06 , G11C8/06 , G11C7/10 , G11C11/4076 , G11C7/22 , G11C11/4097
摘要: A micro-threaded memory device. A plurality of storage banks are provided, each including a plurality of rows of storage cells and having an access restriction in that at least a minimum access time interval must transpire between successive accesses to a given row of the storage cells. Transfer control circuitry is provided to transfer a first amount of data between the plurality of storage banks and an external signal path in response to a first memory access request, the first amount of data being less than a product of the external signal path bandwidth and the minimum access time interval.
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公开(公告)号:US10431290B2
公开(公告)日:2019-10-01
申请号:US16139636
申请日:2018-09-24
申请人: Rambus Inc.
发明人: Wayne F. Ellis , Wayne S. Richardson , Akash Bansal , Frederick A. Ware , Lawrence Lai , Kishore Ven Kasamsetty
IPC分类号: G11C8/00 , G11C11/406 , G11C7/02 , G11C7/20 , G11C11/4072 , G11C29/02 , G06F1/3234 , G11C11/4074
摘要: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.
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公开(公告)号:US20190206458A1
公开(公告)日:2019-07-04
申请号:US16222909
申请日:2018-12-17
申请人: Rambus Inc.
发明人: Ian Shaeffer , Lawrence Lai , Fan Ho , David A. Secker , Wayne S. Richardson , Akash Bansal , Brian S. Leibowitz , Kyung Suk Oh
CPC分类号: G11C8/12 , G11C5/02 , G11C5/04 , G11C5/06 , G11C5/063 , G11C7/1012 , G11C7/1045 , G11C8/18 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/0657 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48095 , H01L2224/48227 , H01L2224/48471 , H01L2224/49171 , H01L2224/49433 , H01L2224/73265 , H01L2225/0651 , H01L2924/00012 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/00
摘要: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.
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公开(公告)号:US20190027210A1
公开(公告)日:2019-01-24
申请号:US16139636
申请日:2018-09-24
申请人: Rambus Inc.
发明人: Wayne F. Ellis , Wayne S. Richardson , Akash Bansal , Frederick A. Ware , Lawrence Lai , Kishore Ven Kasamsetty
IPC分类号: G11C11/406 , G11C11/4074 , G06F1/32 , G11C29/02 , G11C7/02 , G11C11/4072 , G11C7/20
摘要: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.
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公开(公告)号:US20180226120A1
公开(公告)日:2018-08-09
申请号:US15855535
申请日:2017-12-27
申请人: Rambus Inc.
发明人: Wayne F. Ellis , Wayne S. Richardson , Akash Bansal , Frederick A. Ware , Lawrence Lai , Kishore Ven Kasamsetty
IPC分类号: G11C11/406 , G11C11/4074
CPC分类号: G11C11/40615 , G06F1/3234 , G11C7/02 , G11C7/20 , G11C11/4072 , G11C11/4074 , G11C29/022 , G11C29/028
摘要: In one embodiment, a memory device includes a clock receiver to receive a clock signal and a plurality of mode registers to store parameter information associated with a plurality of operating clock frequencies of the clock signal. The plurality of clock frequencies include a first clock frequency and a second clock frequency. The memory device also includes a command interface to receive commands synchronously with respect to the clock signal. The command interface receives a command that instructs the DRAM device to change operation from the first clock frequency to the second clock frequency.
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公开(公告)号:US09734879B2
公开(公告)日:2017-08-15
申请号:US14813028
申请日:2015-07-29
申请人: Rambus Inc.
发明人: Ian Shaeffer , Lawrence Lai , Fan Ho , David A. Secker , Wayne S. Richardson , Akash Bansal , Brian S. Leibowitz , Kyung Suk Oh
CPC分类号: G11C8/12 , G11C5/02 , G11C5/04 , G11C5/06 , G11C5/063 , G11C7/1012 , G11C7/1045 , G11C8/18 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/0657 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48095 , H01L2224/48227 , H01L2224/48471 , H01L2224/49171 , H01L2224/49433 , H01L2224/73265 , H01L2225/0651 , H01L2924/00012 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/00
摘要: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.
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公开(公告)号:US20170177021A1
公开(公告)日:2017-06-22
申请号:US15391299
申请日:2016-12-27
申请人: Rambus Inc.
发明人: Jun Kim , Pak Shing Chau , Wayne S. Richardson
CPC分类号: G06F1/08 , G06F1/10 , G06F13/1673 , G06F13/1689 , H03L7/07 , H03L7/0814 , H03L7/0995 , H04L7/0008 , H04L7/0033 , H04L7/10 , Y02D10/14
摘要: A memory system in which a timing drift that would occur in distribution of a first timing signal for data transport in a memory device is determined by measuring the actual phase delays occurring in a second timing signal that has a frequency lower than that of the first timing signal and is distributed in one or more circuits mimicking the drift characteristics of at least a portion of distribution of the first timing signal. The actual phase delays are determined in the memory device and provided to a memory controller so that the phases of the timing signals used for data transport may be adjusted based on the determined timing drift.
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