公开(公告)号：US20090274184A1

公开(公告)日：2009-11-05

申请号：US11912385

申请日：2006-04-25

申请人： Kei Ikeda ,  Hiroyuki Ogawa

发明人： Kei Ikeda ,  Hiroyuki Ogawa

IPC分类号： H01S3/04

CPC分类号： G11B7/12 ,  G11B7/127

摘要： The present invention provides an optical unit capable of suppressing a thermal influence on the optical element even if a heating source such as a laser driver is disposed near the optical element. A light pickup unit 9 of the present invention includes a beam splitter 12 and a collimate lens 13 at locations opposed to a laser driver 17. In a space 24 formed by the laser driver 17, the beam splitter 12 and the collimate lens 13, a thermal insulation sheet 18 is provided on the side of the laser driver 17, and a thermal conductive sheet 19 is provided on the side of the beam splitter 12 and the collimate lens 13.

摘要翻译： 本发明提供一种能够抑制对光学元件的热影响的光学单元，即使在光学元件附近设置有诸如激光驱动器的加热源。 本发明的光拾取单元9在与激光驱动器17相对的位置处包括分束器12和准直透镜13.在由激光驱动器17，分束器12和准直透镜13形成的空间24中， 绝热片18设置在激光驱动器17的一侧，并且导热片19设置在分束器12和准直透镜13的一侧。

公开(公告)号：US20090098696A1

公开(公告)日：2009-04-16

申请号：US12127067

申请日：2008-05-27

申请人： Jun Lin ,  Hiroyuki Ogawa ,  Hideyuki Kojima

发明人： Jun Lin ,  Hiroyuki Ogawa ,  Hideyuki Kojima

IPC分类号： H01L21/8234

CPC分类号： H01L27/0629 ,  H01L27/0802 ,  H01L27/0805 ,  H01L28/40

摘要： A method of manufacturing a semiconductor device includes forming a first trench in a capacitor device region of a semiconductor substrate, forming a capacitor insulation film over a sidewall surface of the first trench, forming a semiconductor film to cover the first trench, a resistor device region of the semiconductor substrate and a logic device region of the semiconductor substrate, introducing a first impurity element into the semiconductor film formed over the first trench, patterning the semiconductor film to form a top electrode in the capacitor device region, a resistor in the resistor device region and a gate electrode in the logic device region, annealing the semiconductor substrate, and introducing a second impurity element in the resistor.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底的电容器器件区域中形成第一沟槽，在第一沟槽的侧壁表面上形成电容器绝缘膜，形成覆盖第一沟槽的半导体膜，电阻器器件区域 的半导体衬底和半导体衬底的逻辑器件区域，在第一沟槽上形成的半导体膜中引入第一杂质元素，对半导体膜进行构图以在电容器器件区域中形成顶电极，电阻器件中的电阻器 区域和逻辑器件区域中的栅电极，退火半导体衬底，并在电阻器中引入第二杂质元素。

公开(公告)号：US20080289573A1

公开(公告)日：2008-11-27

申请号：US12166997

申请日：2008-07-02

申请人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： B05B5/00

CPC分类号： H01L21/02678 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  C30B13/24 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1004 ,  Y10T117/1008

摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

摘要翻译： 提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求 ，结晶装置，薄膜​​晶体管和显示装置。 当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少， 熔融非单晶半导体的光强度。 此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

公开(公告)号：US07396315B2

公开(公告)日：2008-07-08

申请号：US11229535

申请日：2005-09-20

申请人： Hiroyuki Ogawa ,  Yoshiharu Harada ,  Atsushi Yuki

发明人： Hiroyuki Ogawa ,  Yoshiharu Harada ,  Atsushi Yuki

IPC分类号： B60W10/06 ,  B60W10/10 ,  B60W10/18

CPC分类号： B60T7/12 ,  B60W10/08 ,  B60W10/11 ,  B60W10/30 ,  B60W30/18109 ,  Y02T10/76 ,  Y10T477/644 ,  Y10T477/81 ,  Y10T477/82

摘要： An ECT_ECU executes a program including the steps of: when the vehicle is coasting, increasing at a predetermined variation rate an electrical load attributed to an alternator; and if the transmission has downshifted, reducing the electrical load attributed to alternator.

摘要翻译： ECT_ECU执行程序，包括以下步骤：当车辆滑行时，以预定变化率增加归因于交流发电机的电负载; 并且如果变速器降档，则减少归因于交流发电机的电气负载。

公开(公告)号：US07301193B2

公开(公告)日：2007-11-27

申请号：US10762445

申请日：2004-01-22

申请人： Shenqing Fang ,  Timothy Thurgate ,  Kuo-Tung Chang ,  Richard Fastow ,  Angela T. Hui ,  Kazuhiro Mizutani ,  Kelwin Ko ,  Hiroyuki Kinoshita ,  Yu Sun ,  Hiroyuki Ogawa

发明人： Shenqing Fang ,  Timothy Thurgate ,  Kuo-Tung Chang ,  Richard Fastow ,  Angela T. Hui ,  Kazuhiro Mizutani ,  Kelwin Ko ,  Hiroyuki Kinoshita ,  Yu Sun ,  Hiroyuki Ogawa

IPC分类号： H01L29/788

CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L21/743 ,  H01L29/41766 ,  H01L29/66636

摘要： According to one exemplary embodiment, a floating gate memory cell comprises a stacked gate structure situated on a substrate and situated over a channel region in the substrate. The floating gate memory cell further comprises a recess formed in the substrate adjacent to the stacked gate structure, where the recess has a sidewall, a bottom, and a depth. According to this exemplary embodiment, the floating gate memory cell further comprises a source situated adjacent to the sidewall of the recess and under the stacked gate structure. The floating gate memory cell further comprises a Vss connection region situated under the bottom of the recess and under the source, where the Vss connection region is connected to the source. The Vss connection region being situated under the bottom of the recess causes the source to have a reduced lateral diffusion in the channel region.

摘要翻译： 根据一个示例性实施例，浮动栅极存储器单元包括位于衬底上并位于衬底中的沟道区域上方的堆叠栅极结构。 浮动栅极存储单元还包括形成在衬底中的与堆叠的栅极结构相邻的凹部，其中凹部具有侧壁，底部和深度。 根据该示例性实施例，浮动栅极存储单元还包括位于与凹部的侧壁相邻并位于堆叠栅极结构下方的源极。 浮动栅极存储单元还包括位于凹部底部下方和源极之下的Vss连接区域，其中Vss连接区域连接到源极。 位于凹部底部下方的Vss连接区使得源在通道区域中具有减小的横向扩散。

公开(公告)号：US07226839B1

公开(公告)日：2007-06-05

申请号：US10861575

申请日：2004-06-04

申请人： King Wai Kelwin Ko ,  Hiroyuki Kinoshita ,  Hiroyuki Ogawa ,  Yu Sun

发明人： King Wai Kelwin Ko ,  Hiroyuki Kinoshita ,  Hiroyuki Ogawa ,  Yu Sun

IPC分类号： H01L21/8234

CPC分类号： H01L27/105 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  Y10S438/926

摘要： A method and system for improving the topography of a memory array is disclosed. In one embodiment, a dummy bitline is formed over a field oxide region at an interface between a memory array and interface circuitry. In addition, a poly-2 layer is applied above the dummy bitline on the field oxide region wherein the utilization of the field oxide region for placement of the dummy bitline provides a uniform surface between an actual bitline and the periphery of the memory array. Furthermore, a landing pad is formed at the end of the dummy bitline on the field oxide region, wherein the dummy bitline does not cause erroneous operation of the landing pad.

摘要翻译： 公开了一种用于改善存储器阵列的形貌的方法和系统。 在一个实施例中，在存储器阵列和接口电路之间的接口处的场氧化物区域上形成虚拟位线。 此外，在场氧化物区域上的虚拟位线之上施加多晶硅层2，其中用于放置虚拟位线的场氧化物区域的利用在实际位线和存储器阵列的外围之间提供均匀的表面。 此外，在场氧化物区域上的虚拟位线的末端形成着陆焊盘，其中虚拟位线不会引起着陆焊盘的错误操作。

公开(公告)号：US20070112500A1

公开(公告)日：2007-05-17

申请号：US11554170

申请日：2006-10-30

申请人： Hiroyuki Ogawa

发明人： Hiroyuki Ogawa

IPC分类号： G06F17/00

CPC分类号： B60W40/09 ,  B60K6/48 ,  B60L2240/486 ,  B60W10/06 ,  B60W10/115 ,  B60W20/00 ,  B60W2510/104 ,  B60W2540/04 ,  B60W2540/10 ,  B60W2710/105 ,  F16H59/18 ,  F16H2059/003 ,  F16H2059/086 ,  F16H2059/183 ,  Y02T10/6221

摘要： ECU executes a program including the steps of: detecting a mode input by a driver, detecting an accelerator opening degree TA to calculate an operation potential Pta based on the accelerator opening degree TA and an accelerator operation speed dTA, counting the number of times Pta exceeds a threshold value set according to a mode, as COUNT value, and learning a driver intention level in a sport direction when COUNT value is equal to or greater than the threshold value set according to a mode.

摘要翻译： ECU执行程序，包括以下步骤：检测由驾驶员输入的模式，根据加速器开度TA和加速器操作速度dTA来检测加速器开度TA以计算操作电位Pta，计数Pta超过的次数 根据模式设置的阈值作为COUNT值，并且当COUNT值等于或大于根据模式设置的阈值时，在运动方向上学习驾驶员意图级别。

公开(公告)号：US20060186412A1

公开(公告)日：2006-08-24

申请号：US11408022

申请日：2006-04-21

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： H01L29/76

CPC分类号： H01L21/02678 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  C30B13/24 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1004 ,  Y10T117/1008

摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

摘要翻译： 提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求 ，结晶装置，薄膜​​晶体管和显示装置。 当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少， 熔融非单晶半导体的光强度。 此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

公开(公告)号：US20060167611A1

公开(公告)日：2006-07-27

申请号：US11313797

申请日：2005-12-22

申请人： Hiroyuki Ogawa

发明人： Hiroyuki Ogawa

IPC分类号： B60T7/12

CPC分类号： B60W30/16 ,  B60W10/06 ,  B60W10/11 ,  B60W2540/10 ,  F16H59/20

摘要： An ECU executes a program including a step of outputting a downshift command to an automatic transmission on conditions that a following distance control is being executed, that an acceleration pedal opening degree is detected, and that the detected acceleration pedal opening degree is greater than an opening degree threshold (A) set to be smaller than an opening degree threshold (corresponding to a downshift speed change line) not during execution of the following distance control.

摘要翻译： ECU执行程序，该程序包括在执行后续距离控制的条件下，检测到加速踏板开度，并且检测到的加速踏板开度大于开度的步骤，向自动变速器输出降档命令 度值阈值（A）设定为小于开始度阈值（对应于降档速度改变线），不在执行后续距离控制。

公开(公告)号：US07060125B2

公开(公告)日：2006-06-13

申请号：US10414049

申请日：2003-04-16

申请人： Teruaki Ohkawa ,  Hiroyuki Ogawa ,  Osamu Matsumoto ,  Toshihiro Endo ,  Yasuo Yamamoto

发明人： Teruaki Ohkawa ,  Hiroyuki Ogawa ,  Osamu Matsumoto ,  Toshihiro Endo ,  Yasuo Yamamoto

IPC分类号： C09D11/00

CPC分类号： C09D11/36

摘要： To provide a non-aqueous ink composition which is small in generation of strike through or smear marks and free from the problem of clogging of the nozzle.A non-aqueous ink composition includes solvent, dispersant and coloring material of pigment or dye. The solvent contains therein at least not smaller than 10% by weight non-polar organic solvent which is not higher than 260° C. in 50% running point and at least not smaller than 20% by weight polar organic solvent which is not lower than 300° C. in 50% running point.

摘要翻译： 提供一种产生渗透或涂抹痕迹小且不存在喷嘴堵塞问题的非水性油墨组合物。 非水性油墨组合物包括颜料或染料的溶剂，分散剂和着色材料。 溶剂中含有至少不小于10重量％的非极性有机溶剂，其在50％运行点中不高于260℃，并且至少不小于20重量％的不低于20重量％的极性有机溶剂 300°C，50％运行点。