公开(公告)号：US10583641B2

公开(公告)日：2020-03-10

申请号：US15804319

申请日：2017-11-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Yoshiharu Hirakata ,  Shingo Eguchi ,  Yasuhiro Jinbo ,  Hisao Ikeda ,  Kohei Yokoyama ,  Hiroki Adachi ,  Satoru Idojiri

IPC: B32B37/00 ,  B32B38/18 ,  B32B27/08 ,  B32B27/20 ,  B32B27/36 ,  B32B37/12 ,  B32B17/10 ,  B32B38/00

Abstract: A yield in the step of bonding two members together is improved. A bonding apparatus includes a stage capable of supporting a first member having a sheet-like shape, a fixing mechanism capable of fixing one end portion of a second member having a sheet-like shape so that the second member overlaps with the first member, and a pressurizing mechanism capable of moving from a side of the one end portion of the second member to a side of the other end portion and spreading a bonding layer under pressure between the first member and the second member. The first member and the second member are bonded to each other.

公开(公告)号：US09925749B2

公开(公告)日：2018-03-27

申请号：US14468818

申请日：2014-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Yoshiharu Hirakata ,  Shingo Eguchi ,  Yasuhiro Jinbo ,  Hisao Ikeda ,  Kohei Yokoyama ,  Hiroki Adachi ,  Satoru Idojiri

IPC: B32B37/00 ,  B32B37/12 ,  B32B38/18 ,  B32B17/10 ,  B32B27/08 ,  B32B27/20 ,  B32B27/36 ,  B32B38/00

CPC classification number: B32B37/0046 ,  B32B17/10431 ,  B32B27/08 ,  B32B27/20 ,  B32B27/36 ,  B32B37/0015 ,  B32B37/003 ,  B32B37/1284 ,  B32B38/0008 ,  B32B38/18 ,  B32B38/1841 ,  B32B38/1858 ,  B32B2264/102 ,  B32B2264/105 ,  B32B2309/68 ,  B32B2457/14 ,  B32B2457/20 ,  H01L2224/01 ,  Y10T156/15 ,  Y10T156/1798

Abstract: A yield in the step of bonding two members together is improved. A bonding apparatus includes a stage capable of supporting a first member having a sheet-like shape, a fixing mechanism capable of fixing one end portion of a second member having a sheet-like shape so that the second member overlaps with the first member, and a pressurizing mechanism capable of moving from a side of the one end portion of the second member to a side of the other end portion and spreading a bonding layer under pressure between the first member and the second member. The first member and the second member are bonded to each other.

公开(公告)号：US09770894B2

公开(公告)日：2017-09-26

申请号：US15248579

申请日：2016-08-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: B32B43/00 ,  B32B38/10 ,  B32B37/12 ,  H01L51/56 ,  H01L27/32 ,  H01L51/52 ,  B32B37/00 ,  B32B37/26 ,  H01L51/00

CPC classification number: B32B43/006 ,  B32B37/0053 ,  B32B37/025 ,  B32B37/12 ,  B32B37/1207 ,  B32B38/10 ,  B32B2037/1253 ,  B32B2037/268 ,  B32B2457/20 ,  B32B2457/208 ,  H01L27/322 ,  H01L27/323 ,  H01L27/3262 ,  H01L51/0013 ,  H01L51/003 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5315 ,  H01L2251/5338 ,  Y10T156/1111 ,  Y10T156/1174 ,  Y10T156/1928 ,  Y10T156/195

Abstract: The yield of a peeling process is improved. A peeling apparatus includes a structure body with a convex surface and a stage with a supporting surface which faces the convex surface. The structure body can hold a first member of a process member between the convex surface and the supporting surface. The stage can hold a second member of the process member. The radius of curvature of the convex surface is less than the radius of curvature of the supporting surface. The linear velocity of the convex surface is greater than or equal to the speed of a rotation center of the structure body passing the stage. The first member is wound along the convex surface to be separated from the second member.

公开(公告)号：US09455418B2

公开(公告)日：2016-09-27

申请号：US14468808

申请日：2014-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Kohei Yokoyama ,  Satoru Idojiri ,  Hisao Ikeda ,  Yasuhiro Jinbo ,  Hiroki Adachi ,  Yoshiharu Hirakata ,  Shingo Eguchi

IPC: B29C63/00 ,  H01L51/52 ,  B32B17/06 ,  H01L51/56 ,  B65G49/06

CPC classification number: B65G49/068 ,  B32B17/06 ,  B32B37/025 ,  B32B38/10 ,  B32B43/006 ,  B32B2457/00 ,  B32B2457/14 ,  B32B2457/20 ,  B65G49/069 ,  B65G2249/04 ,  B65H3/0816 ,  B65H3/48 ,  B65H16/00 ,  B65H35/0006 ,  H01L21/673 ,  H01L21/67333 ,  H01L21/67715 ,  H01L21/68 ,  H01L27/3244 ,  H01L51/5237 ,  H01L51/56 ,  H01L2221/68318 ,  H01L2227/323 ,  Y10T29/53091 ,  Y10T29/5317 ,  Y10T156/1121 ,  Y10T156/1137 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1917 ,  Y10T156/1922 ,  Y10T156/1939 ,  Y10T156/1967

Abstract: An apparatus for supplying a support having a clean surface is provided. Alternatively, an apparatus for manufacturing a stack including a support and a remaining portion of a processed member whose one surface layer is separated is provided. A positioning portion, a slit formation portion, and a peeling portion are included. The positioning portion is provided with a first transfer mechanism of a stacked film including a support and a separator and a table for fixing the stacked film. The slit formation portion is provided with a cutter that can form a slit which does not pass through the separator. The peeling portion is provided with a second transfer mechanism and a peeling mechanism extending the separator and then peeling the separator. In addition, a pretreatment portion activating a support surface is included.

Abstract translation: 提供了一种用于提供具有干净表面的支撑件的装置。 或者，提供一种用于制造包括支撑体的堆叠的装置和其一个表面层被分离的被处理构件的剩余部分。 包括定位部分，狭缝形成部分和剥离部分。 定位部设置有包括支撑体和隔板的层叠膜的第一传送机构和用于固定层叠膜的台。 狭缝形成部设置有能够形成不通过隔板的狭缝的切割器。 剥离部设置有第二传送机构和剥离机构，其使隔板延伸，然后剥离隔膜。 此外，包括激活支撑表面的预处理部分。

公开(公告)号：US12048207B2

公开(公告)日：2024-07-23

申请号：US18138866

申请日：2023-04-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L23/00 ,  B23K26/04 ,  B23K26/06 ,  B23K26/0622 ,  B23K26/08 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H10K50/842 ,  H10K50/844 ,  H10K59/121 ,  H10K59/124 ,  H10K59/126 ,  H10K59/38 ,  H10K71/00 ,  H10K71/40 ,  H10K71/50 ,  H10K71/80 ,  H10K77/10 ,  H10K50/18 ,  H10K50/86 ,  H10K59/12 ,  H10K102/00 ,  H10N30/074

CPC classification number: H10K59/126 ,  B23K26/04 ,  B23K26/0617 ,  B23K26/0622 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/083 ,  H01L27/1225 ,  H01L27/1266 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H10K50/8426 ,  H10K50/844 ,  H10K59/1213 ,  H10K59/124 ,  H10K59/38 ,  H10K71/00 ,  H10K71/421 ,  H10K71/50 ,  H10K71/80 ,  H10K77/111 ,  H10K50/18 ,  H10K50/865 ,  H10K59/12 ,  H10K59/1201 ,  H10K2102/311 ,  H10K2102/351 ,  H10N30/074 ,  Y02E10/549 ,  Y02P70/50

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

公开(公告)号：US11791350B2

公开(公告)日：2023-10-17

申请号：US17701961

申请日：2022-03-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Satoru Idojiri ,  Kenichi Okazaki ,  Hiroki Adachi ,  Daisuke Kubota

IPC: H01L51/52 ,  H01L27/12 ,  H01L21/683 ,  H01L29/66 ,  H01L29/786 ,  H10K59/121

CPC classification number: H01L27/1266 ,  H01L21/6835 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78603 ,  H01L29/78648 ,  H01L2221/6835 ,  H01L2221/68386 ,  H10K59/1213

Abstract: A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.

公开(公告)号：US20210257432A1

公开(公告)日：2021-08-19

申请号：US17307088

申请日：2021-05-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  B23K26/0622 ,  B23K26/04 ,  B23K26/06 ,  B23K26/08

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

公开(公告)号：US10930870B2

公开(公告)日：2021-02-23

申请号：US16842820

申请日：2020-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Kayo Kumakura ,  Hiroyuki Watanabe ,  Seiji Yasumoto ,  Satoru Idojiri ,  Hiroki Adachi

IPC: H01L51/00 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52 ,  H01L29/786

Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.

公开(公告)号：US10369664B2

公开(公告)日：2019-08-06

申请号：US15707017

申请日：2017-09-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Seiji Yasumoto ,  Naoto Goto ,  Satoru Idojiri

IPC: B23K26/57 ,  G02F1/1362 ,  H01L27/12 ,  H01L27/32 ,  H01L51/00 ,  G02F1/136

Abstract: The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of the semiconductor device is increased. The semiconductor device is manufactured by performing a step of performing plasma treatment on a first surface of a substrate; a step of forming a first layer over the first surface with the use of a material containing a resin or a resin precursor; a step of forming a resin layer by performing heat treatment on the first layer; and a step of separating the substrate and the resin layer from each other. In the plasma treatment, the first surface is exposed to an atmosphere containing one or more of hydrogen, oxygen, and water vapor.

公开(公告)号：US10355067B2

公开(公告)日：2019-07-16

申请号：US15894117

申请日：2018-02-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  B23K26/0622 ,  B23K26/04 ,  B23K26/06 ,  B23K26/08 ,  H01L27/12 ,  H01L51/50 ,  H01L41/314

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.