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公开(公告)号：US09847456B2
公开(公告)日：2017-12-19
申请号：US14671955
申请日：2015-03-27
Applicant: Seoul Viosys Co., Ltd.
Inventor： So Ra Lee , Jae Hye Jung , Chang Yeon Kim
CPC classification number: H01L33/36 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/405 , H01L33/505 , H01L33/60 , H01L33/647 , H01L2224/48091 , H01L2924/00014
Abstract: Embodiments provide a light emitting diode and a method of fabricating the same. The light emitting diode includes a base, a light emitting structure disposed on the base, at least one first electrode disposed on the light emitting structure; and a second electrode disposed under the light emitting structure, wherein at least a portion of the second electrode is covered by the base and the base includes a supporting insulator and at least one bulk electrode embedded in the supporting insulator and electrically connected to the light emitting structure, and a surface of the at least one bulk electrode is exposed through the supporting insulator. The light emitting diode has excellent reliability and efficiency.
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公开(公告)号：US20170098747A1
公开(公告)日：2017-04-06
申请号：US15380982
申请日：2016-12-15
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Chang Yeon Kim , Sung Su Son , Dae Woong Suh
CPC classification number: H01L33/62 , H01L33/38 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/73104 , H01L2924/00014
Abstract: Disclosed herein is a light emitting device manufactured by separating a growth substrate in a wafer level. The light emitting device includes: a base; a light emitting structure disposed on the base; and a plurality of second contact electrodes disposed between the base and the light emitting structure, wherein the base includes at least two bulk electrodes electrically connected to the light emitting structure and an insulation support disposed between the bulk electrodes and enclosing the bulk electrodes, the insulation support and the bulk electrodes each including concave parts and convex parts engaged with each other on surfaces facing each other, and the convex parts including a section in which a width thereof is changed in a protrusion direction.
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23.发明申请公开(公告)号：US20170092821A1
公开(公告)日：2017-03-30
申请号：US15377731
申请日：2016-12-13
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Jong Min Jang , Won Young Roh , Dae Woong Suh , Min Woo Kang , Joon Sub Lee , Hyun A. Kim , Kyoung Wan Kim , Chang Yeon Kim
CPC classification number: H01L33/508 , H01L33/20 , H01L33/32 , H01L33/385 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/502 , H01L33/62 , H01L2224/16 , H01L2933/0016
Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.
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公开(公告)号：US09508909B2
公开(公告)日：2016-11-29
申请号：US14980937
申请日：2015-12-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC: H01L27/15 , H01L33/60 , H01L33/22 , H01L33/20 , H01L33/38 , H01L33/32 , H01L33/44 , H01L33/06 , H01L33/00
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
Abstract translation: 发光二极管包括支撑衬底，设置在支撑衬底上的半导体堆叠，包括p型化合物半导体层，有源层和n型半导体层的半导体堆叠，设置在支撑体之间的反射金属层 衬底和半导体堆叠，反射金属层与半导体堆叠的p型化合物半导体层欧姆接触并且具有暴露半导体堆叠的一部分的沟槽;与n型化合物半导体层接触的第一电极焊盘 连接到所述第一电极焊盘的电极延伸部，所述电极延伸部沿着垂直于所述支撑基板的线直接设置在所述凹槽上方，所述绝缘层设置在所述第一电极焊盘和所述半导体堆叠之间。 电极延伸部包括接触n型化合物半导体层的Ni层和设置在Ni层上的两个Au层。
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公开(公告)号：US20160111613A1
公开(公告)日：2016-04-21
申请号：US14980937
申请日：2015-12-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.
Abstract translation: 发光二极管包括支撑衬底，设置在支撑衬底上的半导体堆叠，包括p型化合物半导体层，有源层和n型半导体层的半导体堆叠，设置在支撑体之间的反射金属层 衬底和半导体堆叠，反射金属层与半导体堆叠的p型化合物半导体层欧姆接触并且具有暴露半导体堆叠的一部分的沟槽;与n型化合物半导体层接触的第一电极焊盘 连接到所述第一电极焊盘的电极延伸部，所述电极延伸部沿着垂直于所述支撑基板的线直接设置在所述凹槽上方，所述绝缘层设置在所述第一电极焊盘和所述半导体堆叠之间。 电极延伸部包括与n型化合物半导体层接触的Ni层和设置在Ni层上的2层Au层。
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Patent Agency Ranking
公开(公告)号：US20160013388A1
公开(公告)日：2016-01-14
申请号：US14859052
申请日：2015-09-18
Applicant: Seoul Viosys Co., Ltd.
Inventor： So Ra Lee , Chang Yeon Kim , Ju Yong Park , Sung Su Son
CPC classification number: H01L33/642 , H01L27/15 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/62
Abstract: Disclosed herein is a light emitting device. The light emitting device is provided to include a light emitting structure, a first electrode pad, a second electrode pad and a heat dissipation pad, and a substrate on which the light emitting diode is mounted. The substrate includes a base; an insulation pattern formed on the base; and a conductive pattern disposed on the insulation pattern. The base includes a post and a groove separating the post from the conductive pattern. An upper surface of the post is placed lower than an upper surface of the conductive pattern, the heat dissipation pad contacts the upper surface of the post, and the first electrode pad and the second electrode pad contact the conductive pattern. With this structure, the light emitting device has excellent properties in terms of electrical stability and heat dissipation efficiency.
Abstract translation: 本文公开了一种发光器件。 发光装置被设置为包括发光结构，第一电极焊盘，第二电极焊盘和散热垫，以及安装有发光二极管的基板。 基板包括基体; 形成在基座上的绝缘图案; 以及布置在绝缘图案上的导电图案。 底座包括柱和将导柱与导电图案分开的凹槽。 柱的上表面被放置成低于导电图案的上表面，散热垫接触柱的上表面，并且第一电极焊盘和第二电极焊盘接触导电图案。 利用这种结构，发光器件在电稳定性和散热效率方面具有优异的性能。
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公开(公告)号：US20150349232A1
公开(公告)日：2015-12-03
申请号：US14730087
申请日：2015-06-03
Applicant: Seoul Viosys Co., Ltd.
Inventor： So Ra Lee , Chang Yeon Kim , Ju Yong Park , Sung Su Son
CPC classification number: H01L33/647 , H01L25/167 , H01L27/0248 , H01L29/861 , H01L29/8613 , H01L33/382 , H01L33/387 , H01L33/486 , H01L33/58 , H01L33/64 , H01L2924/0002 , H01L2924/00
Abstract: Exemplary embodiments provide a light emitting diode and a method for manufacturing the same. The light emitting diode includes a light emitting structure, a plurality of holes formed through a second conductive type semiconductor layer and an active layer such that a first conductive type semiconductor layer is partially exposed therethrough, and a first electrode and a second electrode electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively, while being insulated from each other. The second electrode includes openings corresponding to the plurality of holes, a plurality of unit electrode layers separated from each other, and at least one connection layer electrically connecting at least two unit electrode layers to each other. The first electrode forms ohmic contact with the first conductive type semiconductor layer through the plurality of holes and partially covers the light emitting structure.
Abstract translation: 示例性实施例提供了一种发光二极管及其制造方法。 发光二极管包括发光结构，通过第二导电型半导体层形成的多个孔和有源层，使得第一导电类型半导体层部分地暴露在其中，第一电极和第二电极电连接到 第一导电类型半导体层和第二导电类型半导体层，同时彼此绝缘。 第二电极包括对应于多个孔的开口，彼此分离的多个单位电极层以及将至少两个单位电极层彼此电连接的至少一个连接层。 第一电极通过多个孔与第一导电类型半导体层形成欧姆接触，并且部分地覆盖发光结构。
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公开(公告)号：US20140131729A1
公开(公告)日：2014-05-15
申请号：US14053098
申请日：2013-10-14
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jeong Hun HEO , Yeo Jin Yoon , Joo Won Choi , Joon Hee Lee , Chang Yeon Kim , Su Young Lee
IPC: H01L27/15
CPC classification number: H01L33/0075 , H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
Abstract: Exemplary embodiments of the present invention disclose a semiconductor device and a method of fabricating the same. The semiconductor device includes a gallium nitride substrate, a plurality of semiconductor stacks disposed on the gallium nitride substrate, and an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation pattern insulating the semiconductor stacks from the gallium nitride substrate.
Abstract translation: 本发明的示例性实施例公开了一种半导体器件及其制造方法。 半导体器件包括氮化镓衬底，设置在氮化镓衬底上的多个半导体堆叠以及设置在氮化镓衬底和多个半导体堆叠之间的绝缘图案，该绝缘图案使半导体堆叠与氮化镓衬底绝缘 。
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公开(公告)号：US12288775B2
公开(公告)日：2025-04-29
申请号：US18111861
申请日：2023-02-20
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min Jang , Chang Yeon Kim , Myoung Hak Yang
IPC: H01L25/075 , H01L23/31 , H01L27/15 , H01L33/62
Abstract: A light emitting device including a board, a first stacked structure configured to emit light having a first wavelength, a second stacked structure configured to emit light having a second wavelength, a third stacked structure configured to emit light having a third wavelength, a first connection electrode electrically connected to the first stacked structure, the second stacked structure, and the third stacked structure, and a protection material covering at least a portion of the first connection electrode, in which each of the first, second, and third stacked structures is configured to selectively emit light while being connected to the first connection electrode, and the protection material is configured to transmit at least 50% of light having the first wavelength, light having the second wavelength, and light having the third wavelength upon operation of each of the first, second, and third stacked structures.
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公开(公告)号：US12159966B2
公开(公告)日：2024-12-03
申请号：US18200400
申请日：2023-05-22
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Min Jang , Chang Yeon Kim
IPC: H01L33/62 , H01L25/075 , H01L33/00 , H01L33/24 , H01L33/56
Abstract: A light emitting device including a first light emitter, a second light emitter, and a third light emitter, each including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. An adhesive layer includes a first adhesive portion disposed between the first light emitter, and the second light emitter, and a second adhesive portion disposed between the second light emitter and the third light emitter, in which the second light emitter is disposed between the first light emitter and the third light emitter, and the first adhesive portion and the second adhesive portion are optically transmitting and connect adjacent light emitters.
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