公开(公告)号：US20180145190A1

公开(公告)日：2018-05-24

申请号：US15603796

申请日：2017-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyoung LEE ,  Jinseong HEO ,  Jaeho LEE ,  Haeryong KIM ,  Seongjun PARK ,  Hyeonjin SHIN ,  Eunkyu LEE ,  Sanghyun JO

IPC: H01L31/0216 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/18 ,  G01N21/59

CPC classification number: H01L31/02161 ,  G01N21/59 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/035218 ,  H01L31/1804 ,  Y02E10/544 ,  Y02E10/547

Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

公开(公告)号：US20170338260A1

公开(公告)日：2017-11-23

申请号：US15668997

申请日：2017-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Seongjun PARK ,  Kiyoung LEE ,  Sangyeob LEE ,  Eunkyu LEE ,  Jaeho LEE

IPC: H01L27/146 ,  H01L31/0224 ,  H01L29/786 ,  H01L31/10 ,  H01L27/144

CPC classification number: H01L31/1075 ,  H01L27/144 ,  H01L27/14603 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/66015 ,  H01L29/6603 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0326 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/09 ,  H01L31/105 ,  H01L31/109 ,  H01L31/1136 ,  H01L31/18 ,  Y02E10/547

Abstract: A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.

公开(公告)号：US20240151522A1

公开(公告)日：2024-05-09

申请号：US18412823

申请日：2024-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyu LEE ,  Yeonchoo CHO ,  Sangwon KIM ,  Kyung-Eun BYUN ,  Hyunjae SONG ,  Hyeonjin SHIN

IPC: G01B15/02 ,  G01N23/2208 ,  G01N23/2273 ,  H01L21/285 ,  H01L21/66 ,  H01L29/45

CPC classification number: G01B15/02 ,  G01N23/2208 ,  G01N23/2273 ,  H01L21/28512 ,  H01L22/12 ,  H01L29/45 ,  G01N2223/085 ,  G01N2223/61

Abstract: A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

公开(公告)号：US20220115432A1

公开(公告)日：2022-04-14

申请号：US17555977

申请日：2021-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Eunkyu LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Jinseong HEO

IPC: H01L27/146 ,  H01L31/074 ,  H01L31/0264

Abstract: Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

公开(公告)号：US20220093746A1

公开(公告)日：2022-03-24

申请号：US17541871

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Hyeonjin SHIN ,  Dongwook LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Eunkyu LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/16 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/028 ,  H01L31/101 ,  H01L51/05 ,  H01L51/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US20210206643A1

公开(公告)日：2021-07-08

申请号：US17138194

申请日：2020-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok LEE ,  Changhyun KIM ,  Kyung-Eun BYUN ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Eunkyu LEE

IPC: C01B32/186 ,  C01B32/194 ,  C23C16/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/513

Abstract: Provided is a method of selectively growing graphene. The method includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.

公开(公告)号：US20200186926A1

公开(公告)日：2020-06-11

申请号：US16635260

申请日：2018-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwoo PARK ,  Eunkyu LEE ,  Wonbae LIM ,  Eujin HA ,  Sunmoek JUNG ,  Meeryung CHOI

IPC: H04R5/033 ,  H04R1/10 ,  H04M3/56 ,  G06F3/0484

Abstract: Various embodiments provide an electronic device and a method, the device comprising: an audio module; a display; a connection terminal connected to earphones; a communication interface; and a processor electrically connected to the audio module, the display, the connection terminal, or the communication interface, wherein the processor is set to display execution screens associated with a first application and a second application through a multi-window, respectively, and output an audio signal corresponding to the first application and an audio signal corresponding to the second application to a left terminal or a right terminal of the earphones separately based on a window position corresponding to each execution screen. In addition, other embodiments are also possible.

公开(公告)号：US20190161351A1

公开(公告)日：2019-05-30

申请号：US16183146

申请日：2018-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae SONG ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Changseok LEE ,  Changhyun KIM ,  Kyungeun BYUN ,  Seungwon LEE ,  Eunkyu LEE

IPC: C01B32/186 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  C23C16/26 ,  C23C16/50

Abstract: Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.

公开(公告)号：US20180130843A1

公开(公告)日：2018-05-10

申请号：US15800229

申请日：2017-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Eunkyu LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Jinseong HEO

IPC: H01L27/146

CPC classification number: H01L27/14667 ,  B82Y15/00 ,  H01L27/14636 ,  H01L31/0264 ,  H01L31/074

Abstract: Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

公开(公告)号：US20160359062A1

公开(公告)日：2016-12-08

申请号：US14932701

申请日：2015-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Kiyoung LEE ,  Jaeho LEE ,  Sangyeob LEE ,  Eunkyu LEE ,  Seongjun PARK

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/0264

CPC classification number: H01L31/0352 ,  H01L31/0264 ,  H01L31/028 ,  H01L31/032 ,  H01L31/035218 ,  H01L31/036 ,  H01L31/112 ,  H01L31/18 ,  Y02E10/547

Abstract: An optical device including a two-dimensional material and a method of manufacturing the same are provided. The optical device may include a barrier stack formed on a bottom channel layer, a top channel layer formed on the barrier stack, a drain electrode connected to the bottom channel layer, a source electrode formed on a substrate. The barrier stack may include two or more barrier layers, and one or more channel units at least partially interposing between the barrier layers. Channel units connected to the drain electrode and channel units connected to the source electrode may be formed, in an alternating sequence, between barrier layers included in the barrier stack. The barrier layers may each have a thickness which is less than a distance which may be traveled by electrons and holes generated by photo absorption prior to recombination. As a result, the optical device may provide improved photo separation efficiency.

Abstract translation: 提供了包括二维材料的光学装置及其制造方法。 光学器件可以包括形成在底部沟道层上的势垒堆叠，形成在势垒堆叠上的顶部沟道层，连接到底部沟道层的漏电极，形成在衬底上的源电极。 势垒堆叠可以包括两个或更多个阻挡层，以及至少部分地插入阻挡层之间的一个或多个沟道单元。 连接到漏电极的通道单元和连接到源极的通道单元可以以交替的顺序形成在阻挡叠层中包括的阻挡层之间。 阻挡层可以各自具有小于在复合之前由光吸收产生的电子和空穴行进的距离的厚度。 结果，光学装置可以提供改善的光分离效率。