Substrate Treating Apparatus
    22.
    发明申请
    Substrate Treating Apparatus 有权
    基板处理装置

    公开(公告)号:US20140291421A1

    公开(公告)日:2014-10-02

    申请号:US14187556

    申请日:2014-02-24

    CPC classification number: H01L21/6708 H01L21/67017 H01L21/67051

    Abstract: Provided is a substrate treating apparatus including a housing; a plurality of opening-and-closing members configured to provide a driving force for opening and closing the housing; a fluid storing member supplying a fluid to the opening-and-closing members; and a fluid distribution unit connected to the fluid storing member via a supply conduit to distribute the fluid supplied from the fluid storing member to the opening-and-closing members. The fluid distribution unit includes a distribution conduit diverging from the supply conduit and connected to a corresponding one of the opening-and-closing members; and a fluid distribution member provided at a junction between the supply conduit and the distribution conduit.

    Abstract translation: 提供一种基板处理装置,包括壳体; 多个打开和关闭构件,其构造成提供用于打开和关闭壳体的驱动力; 向开闭部件供给流体的流体存储部件; 以及流体分配单元,其经由供应管道连接到流体存储构件,以将从流体存储构件供应的流体分配到打开和关闭构件。 流体分配单元包括从供应导管分支并连接到相应的一个打开和关闭构件的分配管道; 以及设置在供应管道和分配管道之间的接合处的流体分配构件。

    APPARATUS FOR DRYING WAFER AND METHOD FOR DRYING WAFER

    公开(公告)号:US20250155816A1

    公开(公告)日:2025-05-15

    申请号:US19025489

    申请日:2025-01-16

    Abstract: A method for drying a wafer includes: supplying supercritical fluid to a drying chamber; stopping a supply of the supercritical fluid and drying a developer in the drying chamber; and exhausting the supercritical fluid from the drying chamber, wherein the exhausting the supercritical fluid includes: exhausting the supercritical fluid through a main exhaust line connected to the drying chamber by opening a main valve, based on pressure of the drying chamber being above a first pressure, based on the pressure of the drying chamber decreasing to the first pressure, exhausting the supercritical fluid through a negative pressure tank installed in an auxiliary exhaust line by closing the main valve and opening a first valve and a second valve that are installed in the auxiliary exhaust line.

    Substrate processing apparatus and substrate processing method

    公开(公告)号:US12211716B2

    公开(公告)日:2025-01-28

    申请号:US17664243

    申请日:2022-05-20

    Abstract: A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.

    APPARATUS FOR DRYING WAFER AND METHOD FOR DRYING WAFER

    公开(公告)号:US20230004089A1

    公开(公告)日:2023-01-05

    申请号:US17673978

    申请日:2022-02-17

    Abstract: An apparatus for drying a wafer, includes: a drying chamber; a supercritical fluid supply module configured to supply supercritical fluid to the drying chamber; a main exhaust line connected to the drying chamber and in which a main valve is installed; and an auxiliary exhaust unit connected to the main exhaust line. The auxiliary exhaust unit includes: an auxiliary exhaust line connected to the main exhaust line and configured to exhaust the supercritical fluid from the drying chamber when the main valve is closed; a negative pressure tank installed in the auxiliary exhaust line; a first valve, installed in the auxiliary exhaust line, that is configured to be opened when the main valve is closed; and a second valve, installed in the auxiliary exhaust line, that is configured to be opened in conjunction with the first valve.

    APPARATUS FOR PROCESSING A SUBSTRATE

    公开(公告)号:US20220199440A1

    公开(公告)日:2022-06-23

    申请号:US17381507

    申请日:2021-07-21

    Abstract: An apparatus for processing a substrate may include a wet chamber, a dry chamber, a first transfer robot and a shared shutter. The wet chamber may be configured to process the substrate using a chemical. The dry chamber may be adjacent the wet chamber and configured to dry the substrate processed by the wet chamber. The first transfer robot may be configured to transfer the substrate between the wet chamber and the dry chamber. The shared shutter may be between the wet chamber and the dry chamber. A connection opening through which the substrate may be transferred may be formed between the wet chamber and the dry chamber. The shared shutter may be configured to open and close the connection opening.

    Process Chamber and Substrate Processing Apparatus Including the Same

    公开(公告)号:US20180366349A1

    公开(公告)日:2018-12-20

    申请号:US15848481

    申请日:2017-12-20

    Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

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