公开(公告)号：US20170098749A1

公开(公告)日：2017-04-06

申请号：US15280241

申请日：2016-09-29

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Seongjun PARK ,  Hyeonjin SHIN ,  Sungwng KIM ,  Eunsung KIM ,  Jaeyeol HWANG

IPC: H01L35/16 ,  H01L35/34 ,  H01L35/10 ,  H01L35/18

CPC classification number: H01L35/16 ,  H01L21/02488 ,  H01L21/02502 ,  H01L35/10 ,  H01L35/18 ,  H01L35/34

Abstract: A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.

公开(公告)号：US20160359429A1

公开(公告)日：2016-12-08

申请号：US14843020

申请日：2015-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Minsu SEOL ,  Hyeonjin SHIN ,  Seongjun PARK

IPC: H02N1/04

CPC classification number: H02N1/04

Abstract: Example embodiments relate to triboelectric generators that include a first electrode and a triboelectric material layer facing first electrode, and a self-assembled monolayer that is combined with a surface of the first electrode or a surface of the triboelectric material layer between the first electrode and the triboelectric material layer. The self-assembled monolayer is formed of or include a material that includes a silane group, a silanol group, or a thiol group according to a material to be combined.

Abstract translation: 示例性实施例涉及摩擦电发生器，其包括面向第一电极的第一电极和摩擦电材料层，以及自组装单层，其与第一电极的表面或摩擦电材料层的表面在第一电极和 摩擦材料层。 根据待组合的材料，自组装单层由或包括包含硅烷基，硅烷醇基或硫醇基的材料形成或包括。

公开(公告)号：US20160322628A1

公开(公告)日：2016-11-03

申请号：US15131649

申请日：2016-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONGWOOK LEE ,  Hyeonjin SHIN ,  Seongjun PARK

IPC: H01M4/134 ,  H01M10/0525 ,  H01M4/1395 ,  H01M4/04 ,  H01M4/38 ,  H01M4/62

CPC classification number: H01M4/134 ,  H01M4/0471 ,  H01M4/1395 ,  H01M4/386 ,  H01M4/625 ,  H01M4/661 ,  H01M4/663 ,  H01M4/667 ,  H01M4/80 ,  H01M10/052 ,  H01M2004/021 ,  H01M2004/028

Abstract: Example embodiments relate to a cathode layer of a lithium secondary battery. The cathode layer includes a three-dimensional carbon structure and a plurality of silicon particles. The three-dimensional carbon structure includes a plurality of cavities without a binder, and the plurality of silicon particles are disposed in the plurality of cavities.

Abstract translation: 实施例涉及锂二次电池的阴极层。 阴极层包括三维碳结构和多个硅颗粒。 三维碳结构包括多个没有粘合剂的空腔，并且多个硅颗粒设置在多个空腔中。

公开(公告)号：US20160291472A1

公开(公告)日：2016-10-06

申请号：US14843003

申请日：2015-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwon KIM ,  Minsu SEOL ,  Seongjun PARK ,  Yeonchoo CHO

IPC: G03F7/11 ,  G03F7/36 ,  G03F7/16

Abstract: A hardmask composition may include graphene nanoparticles having a size in a range of about 5 nm to about 100 nm and a solvent.

Abstract translation: 硬掩模组合物可以包括尺寸在约5nm至约100nm范围内的石墨烯纳米颗粒和溶剂。

公开(公告)号：US20160282721A1

公开(公告)日：2016-09-29

申请号：US14825792

申请日：2015-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Sangwon KIM ,  Hyeonjin SHIN ,  Seongjun PARK ,  Yeonchoo CHO

IPC: G03F7/11

CPC classification number: G03F7/094

Abstract: A hardmask composition includes a plurality of graphene nanosheets doped with boron (B) and/or nitrogen (N) and a solvent. A size of the graphene nanosheet may be in a range of about 5 nm to about 1000 nm. The hardmask composition may include an aromatic ring-containing material.

Abstract translation: 硬掩模组合物包括掺杂有硼（B）和/或氮（N）和溶剂的多个石墨烯纳米片。 石墨烯纳米片的尺寸可以在约5nm至约1000nm的范围内。 硬掩模组合物可以包括含芳环的材料。

公开(公告)号：US20160240482A1

公开(公告)日：2016-08-18

申请号：US14814938

申请日：2015-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae SONG ,  Seunggeol NAM ,  Yeonchoo CHO ,  Seongjun PARK ,  Hyeonjin SHIN ,  Jaeho LEE

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53209 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/5226

Abstract: Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

Abstract translation: 示例实施例涉及具有扩散阻挡层的层结构及其制造方法。 层结构包括第一和第二材料层以及它们之间的扩散阻挡层。 扩散阻挡层包括纳米晶石墨烯（nc-G）层。 在层结构中，扩散阻挡层还可以与nc-G层一起包括非石墨烯金属化合物层或石墨烯层。 第一和第二材料层之一是绝缘层，金属层或半导体层，其余层可以是金属层。

公开(公告)号：US20160148369A1

公开(公告)日：2016-05-26

申请号：US14810948

申请日：2015-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjun JEONG ,  Jaeho LEE ,  Seongjun PARK

IPC: G06T7/00 ,  G06T7/40 ,  C23C14/34 ,  G06F17/14 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C14/34 ,  C23C16/04 ,  C23C16/26 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/52 ,  C23C16/56 ,  G06T7/0002 ,  G06T2207/10056 ,  G06T2207/20056 ,  G06T2207/30144 ,  G06T2207/30148

Abstract: A method of analyzing growth of a two-dimensional material includes forming a two-dimensional material layer includes defects on a substrate, depositing detection material layers on the defects, and one of (i) capturing an image of the two-dimensional material layer on which the detection material layers are deposited and processing the captured image, or (ii) obtaining map coordinates of the detection material layers and processing the obtained map coordinates.

Abstract translation: 分析二维材料生长的方法包括：形成二维材料层，其包括在基板上的缺陷，在所述缺陷上沉积检测材料层，以及（i）将所述二维材料层的图像 其中检测材料层被沉积并处理所捕获的图像，或者（ii）获得检测材料层的地图坐标并处理所获得的地图坐标。

公开(公告)号：US20160027645A1

公开(公告)日：2016-01-28

申请号：US14697150

申请日：2015-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin SHIN ,  Sangwon KIM ,  Seongjun PARK

IPC: H01L21/033 ,  G03F7/11 ,  C08K3/22 ,  C09D7/12 ,  C08K3/30 ,  C08K5/56 ,  H01L21/02 ,  C08K3/38

CPC classification number: H01L21/0332 ,  C08K3/22 ,  C08K3/30 ,  C08K3/38 ,  C08K5/56 ,  C08K2003/2255 ,  C08K2003/3009 ,  C08K2003/385 ,  C09D7/61 ,  C09D7/63 ,  G03F7/094 ,  H01L21/02112 ,  H01L21/02282 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02584 ,  H01L21/02628 ,  H01L21/31122 ,  H01L21/31144

Abstract: Example embodiments relate to a hardmask composition and/or a method of forming a fine pattern by using the hardmask composition, wherein the hardmask composition includes at least one of a two-dimensional layered nanostructure and a precursor thereof, and a solvent, and an amount of the at least one of a two-dimensional layered nanostructure and the precursor is about 0.01 part to about 40 parts by weight based on 100 parts by weight of the hardmask composition.

Abstract translation: 实施例涉及硬掩模组合物和/或通过使用硬掩模组合物形成精细图案的方法，其中所述硬掩模组合物包括二维层状纳米结构及其前体中的至少一种和溶剂，以及量 的二维层状纳米结构和前体中的至少一种为基于100重量份的硬掩模组合物为约0.01重量份至约40重量份。

公开(公告)号：US20220115432A1

公开(公告)日：2022-04-14

申请号：US17555977

申请日：2021-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Eunkyu LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Jinseong HEO

IPC: H01L27/146 ,  H01L31/074 ,  H01L31/0264

Abstract: Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

公开(公告)号：US20220093746A1

公开(公告)日：2022-03-24

申请号：US17541871

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Hyeonjin SHIN ,  Dongwook LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Eunkyu LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/16 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/028 ,  H01L31/101 ,  H01L51/05 ,  H01L51/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.