公开(公告)号：US11978798B2

公开(公告)日：2024-05-07

申请号：US17515984

申请日：2021-11-01

申请人： Samsung Electronics Co., Ltd.

发明人： Seunggeol Nam ,  Jinseong Heo ,  Sangwook Kim ,  Hagyoul Bae ,  Taehwan Moon ,  Yunseong Lee

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/51 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423

CPC分类号： H01L29/78391 ,  H01L29/0847 ,  H01L29/516 ,  H01L29/7851 ,  H01L29/78696 ,  H01L29/0673 ,  H01L29/42392

摘要： Provided is a ferroelectric semiconductor device including a source and a drain having different polarities. The ferroelectric semiconductor may include a ferroelectric including zirconium oxide (ZrO2), hafnium oxide (HfO2), and/or hafnium-zirconium oxide (HfxZr1-xO, 0

公开(公告)号：US11862705B2

公开(公告)日：2024-01-02

申请号：US17208018

申请日：2021-03-22

申请人： Samsung Electronics Co., Ltd.

发明人： Jinseong Heo ,  Yunseong Lee ,  Taehwan Moon ,  Sanghyun Jo

IPC分类号： H01L29/51 ,  H01L21/28

CPC分类号： H01L29/516 ,  H01L21/28158 ,  H01L29/40111

摘要： An electronic device includes a seed layer including a two-dimensional (2D) material, and a ferroelectric layer on the seed layer. The ferroelectric layer is configured to be aligned in a direction in which a (111) crystal direction is perpendicular to a top surface of a substrate on which the seed layer is located and/or a top surface of the seed layer.

公开(公告)号：US11824118B2

公开(公告)日：2023-11-21

申请号：US18060140

申请日：2022-11-30

申请人： Samsung Electronics Co., Ltd.

发明人： Jinseong Heo ,  Sangwook Kim ,  Yunseong Lee ,  Sanghyun Jo ,  Hyangsook Lee

IPC分类号： H01L29/78 ,  H01L29/40 ,  H01L29/51

CPC分类号： H01L29/78391 ,  H01L29/401 ,  H01L29/516

摘要： Provided are an electronic device and a method of manufacturing the same. The electronic device includes a ferroelectric crystallization layer between a substrate and a gate electrode and a crystallization prevention layer between the substrate and the ferroelectric crystallization layer. The ferroelectric crystallization layer is at least partially crystallized and includes a dielectric material having ferroelectricity or anti-ferroelectricity. Also, the crystallization prevention layer prevents crystallization in the ferroelectric crystallization layer from being spread toward the substrate.

公开(公告)号：US11527635B2

公开(公告)日：2022-12-13

申请号：US16890231

申请日：2020-06-02

申请人： Samsung Electronics Co., Ltd.

发明人： Yunseong Lee ,  Sangwook Kim ,  Sanghyun Jo ,  Jinseong Heo ,  Hyangsook Lee

IPC分类号： H01L29/51 ,  H01L29/78 ,  H01L21/02

摘要： A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.

公开(公告)号：US11456351B2

公开(公告)日：2022-09-27

申请号：US17171291

申请日：2021-02-09

申请人： Samsung Electronics Co., Ltd.

发明人： Taehwan Moon ,  Jinseong Heo ,  Sangwook Kim ,  Yunseong Lee

IPC分类号： H01L29/49 ,  H01L49/02 ,  H01L51/05 ,  H01L29/78 ,  H01L21/02 ,  H01L29/40 ,  H01L27/11507 ,  H01L27/1159

摘要： Disclosed are a thin film structure and an electronic device including the same. The disclosed thin film structure includes a dielectric material layer between a first material layer and a second material layer. The dielectric material layer includes a dopant in a matrix material having a fluorite structure. The dielectric material layer is uniformly doped with a low concentration of the dopant, and has ferroelectricity.

公开(公告)号：US11305365B2

公开(公告)日：2022-04-19

申请号：US16881377

申请日：2020-05-22

申请人： Samsung Electronics Co., Ltd.

发明人： Jinseong Heo ,  Yunseong Lee ,  Sanghyun Jo

IPC分类号： B23K3/08 ,  B23K3/06 ,  H01L23/00 ,  H01L27/11585 ,  H01L29/66

摘要： Provided are a logic switching device and a method of manufacturing the same. The logic switching device may include a domain switching layer adjacent to a gate electrode. The domain switching layer may include a ferroelectric material region and an anti-ferroelectric material region. The domain switching layer may be a non-memory element. The logic switching device may include a channel, a source and a drain both connected to the channel, the gate electrode arranged to face the channel, and the domain switching layer provided between the channel and the gate electrode.

公开(公告)号：US10777412B2

公开(公告)日：2020-09-15

申请号：US15874226

申请日：2018-01-18

申请人： Samsung Electronics Co., Ltd.

发明人： Dongwook Lee ,  Sangwon Kim ,  Minsu Seol ,  Seongjun Park ,  Hyeonjin Shin ,  Yunseong Lee ,  Seongjun Jeong ,  Alum Jung

IPC分类号： H01L21/00 ,  H01B1/00 ,  H01L21/033 ,  G03F7/11 ,  G03F7/09 ,  H01B1/04 ,  C01B32/194 ,  H01L21/311 ,  B82Y30/00 ,  B82Y40/00

摘要： Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M—O—C bond or an M—C bond, where M is a metal element, O is oxygen, and C is carbon.

公开(公告)号：US10702940B2

公开(公告)日：2020-07-07

申请号：US16391477

申请日：2019-04-23

申请人： Samsung Electronics Co., Ltd.

发明人： Jinseong Heo ,  Yunseong Lee ,  Sanghyun Jo

IPC分类号： B23K3/08 ,  B23K3/06 ,  H01L23/00

摘要： Provided are a logic switching device and a method of manufacturing the same. The logic switching device may include a domain switching layer adjacent to a gate electrode. The domain switching layer may include a ferroelectric material region and an anti-ferroelectric material region. The domain switching layer may be a non-memory element. The logic switching device may include a channel, a source and a drain both connected to the channel, the gate electrode arranged to face the channel, and the domain switching layer provided between the channel and the gate electrode.

公开(公告)号：US09748108B2

公开(公告)日：2017-08-29

申请号：US15068110

申请日：2016-03-11

申请人： Samsung Electronics Co., Ltd.

发明人： Seongjun Jeong ,  Seongjun Park ,  Yunseong Lee

IPC分类号： H01L21/308 ,  H01L21/467 ,  H01L51/00 ,  H01L29/66 ,  H01L29/778 ,  H01L29/06 ,  H01L29/16 ,  H01L21/3065 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/775

CPC分类号： H01L29/1606 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02527 ,  H01L21/02603 ,  H01L21/042 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/467 ,  H01L21/823412 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66037 ,  H01L29/66045 ,  H01L29/775 ,  H01L29/778 ,  H01L29/78696 ,  H01L51/0045 ,  Y10S977/755 ,  Y10S977/888

摘要： Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of forming the graphene nanopattern may include forming a graphene layer on a substrate, forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer, forming a mask pattern from the block copolymer layer by removing one of a plurality of first region and a plurality of second regions of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask. The block copolymer layer may be formed to directly contact the graphene layer. The block copolymer layer may be formed to directly contact a region of the substrate structure that is exposed on at least one side of the graphene layer.

公开(公告)号：US12089416B2

公开(公告)日：2024-09-10

申请号：US18332972

申请日：2023-06-12

申请人： Samsung Electronics Co., Ltd.

发明人： Jinseong Heo ,  Yunseong Lee ,  Sanghyun Jo

IPC分类号： H01L29/40 ,  G11C11/22 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78 ,  H10B51/30 ,  G06N3/065

CPC分类号： H10B51/30 ,  G11C11/223 ,  H01L29/40111 ,  H01L29/6684 ,  H01L29/78391 ,  G06N3/065

摘要： Provided are an electronic device and a method of manufacturing the same. The electronic device may include a first device provided on a first region of a substrate; and a second device provided on a second region of the substrate, wherein the first device may include a first domain layer including a ferroelectric domain and a first gate electrode on the first domain layer, and the second device may include a second domain layer including a ferroelectric domain and a second gate electrode on the second domain layer. The first domain layer and the second domain layer may have different characteristics from each other at a polarization change according to an electric field. At the polarization change according to the electric field, the first domain layer may have substantially a non-hysteretic behavior characteristic and the second domain layer may have a hysteretic behavior characteristic.