利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

62 条记录 (耗时 0.036 秒)

    In-situ process state monitoring of chamber
    21.
    发明申请
    In-situ process state monitoring of chamber 审中-公开
    室的原位过程状态监测

    公开(公告)号：US20080063810A1

    公开(公告)日：2008-03-13

    申请号：US11508524

    申请日：2006-08-23

    申请人： Soonam Park ,  Qiwei Liang ,  Zhong Qiang ,  Dmitry Lubomirsky ,  Young S. Lee

    发明人： Soonam Park ,  Qiwei Liang ,  Zhong Qiang ,  Dmitry Lubomirsky ,  Young S. Lee

    IPC分类号： H05H1/24 ,  C23C16/00

    CPC分类号： H01J37/32972 ,  C23C16/4401 ,  C23C16/52 ,  H01J37/32935

    摘要： The process state of a chamber after a maintenance procedure can be monitored in-situ in order to ensure that the chamber is ready for processing, while minimizing waste and downtime due to aftereffects of the maintenance procedure. The composition of a bulk plasma in a process chamber can be analyzed using an analytical tool to capture the emission spectrum of the plasma. The spectrum can be analyzed to generate a model of the current chamber conditions, which can be compared to a model of ideal chamber conditions using a statistical analysis approach such as multivariate primary component analysis. If the current and ideal models match to within a set confidence level, the chamber conditions are acceptable for processing devices, and any processing of cycling workpieces or other plasma-cleansing processes can be stopped.

    摘要翻译： 可以在现场监测维护程序之后的室的过程状态，以确保室准备好进行处理，同时将由于维护过程的后期影响引起的浪费和停机时间最小化。 可以使用分析工具来分析处理室中的体积等离子体的组成以捕获等离子体的发射光谱。 可以分析光谱以产生当前室条件的模型，其可以使用诸如多变量主成分分析的统计分析方法与理想室条件的模型进行比较。 如果当前和理想模型与设定的置信水平相匹配，则腔室条件对于加工设备是可接受的，并且可以停止循环工件或其他等离子体清洁过程的任何处理。

    INTEGRATED PROCESS MODULATION (IPM) A NOVEL SOLUTION FOR GAPFILL WITH HDP-CVD
    22.
    发明申请
    INTEGRATED PROCESS MODULATION (IPM) A NOVEL SOLUTION FOR GAPFILL WITH HDP-CVD 失效
    集成过程调制（IPM）用于HDP-CVD的GAPFILL的新颖解决方案

    公开(公告)号：US20070243693A1

    公开(公告)日：2007-10-18

    申请号：US11553772

    申请日：2006-10-27

    申请人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

    发明人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76224

    摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

    摘要翻译： 提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。 包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。 从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。 氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。 使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。 卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。

    SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION
    23.
    发明申请
    SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION 有权
    通过可转化氢终止方式选择性硅

    公开(公告)号：US20130089988A1

    公开(公告)日：2013-04-11

    申请号：US13439079

    申请日：2012-04-04

    申请人： Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    发明人： Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/32137

    摘要： Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.

    摘要翻译： 描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。 等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。 硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。 含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。 这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

    SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN
    24.
    发明申请
    SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN 有权
    选择性抑制含有硅和氧的材料的干蚀速率

    公开(公告)号：US20130052827A1

    公开(公告)日：2013-02-28

    申请号：US13449543

    申请日：2012-04-18

    申请人： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    发明人： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

    IPC分类号： H01L21/308

    CPC分类号： H01L21/31116 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/32137

    摘要： A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.

    摘要翻译： 描述了抑制图案化异质结构上暴露的含硅和氧的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。 使用该技术提高其选择性的材料的实例包括氮化硅和硅。 远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氧的材料上形成保护性固体副产物。 第一级的等离子体流出物由包括含氮前体和含氢前体的前体组合的远程等离子体形成。 远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺乏保护性固体副产物的材料。 第二级的等离子体流出物由含氟前体的远程等离子体形成。

    INTEGRATED PROCESS MODULATION FOR PSG GAPFILL
    25.
    发明申请
    INTEGRATED PROCESS MODULATION FOR PSG GAPFILL 失效
    PSG GAPFILL的集成过程调制

    公开(公告)号：US20120325773A1

    公开(公告)日：2012-12-27

    申请号：US13490426

    申请日：2012-06-06

    申请人： Young S. Lee ,  Anchuan Wang ,  Lan Chia Chan ,  Shankar Venkataraman

    发明人： Young S. Lee ,  Anchuan Wang ,  Lan Chia Chan ,  Shankar Venkataraman

    IPC分类号： C23C16/50 ,  C23C16/56

    CPC分类号： C23C16/56 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/76224

    摘要： A method of depositing a phosphosilicate glass (PSG) film on a substrate disposed in a substrate processing chamber includes depositing a first portion of the PSG film over the substrate using a high-density plasma process. Thereafter, a portion of the first portion of the PSG film may be etched back. The etch back process may include flowing a halogen precursor to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the etch back. The method also includes flowing a halogen scavenger to the substrate processing chamber to react with residual halogen in the substrate processing chamber, and exposing the first portion of the PSG film to a phosphorus-containing gas to provide a substantially uniform phosphorus concentration throughout the first portion of the PSG film.

    摘要翻译： 在设置在衬底处理室中的衬底上沉积磷硅玻璃（PSG）膜的方法包括使用高密度等离子体工艺在衬底上沉积第一部分PSG膜。 此后，PSG膜的第一部分的一部分可被回蚀刻。 回蚀工艺可以包括将卤素前体流动到衬底处理室，从卤素前体形成高密度等离子体，并且在回蚀刻之后使卤素前体终止流动。 该方法还包括使卤素清除剂流到衬底处理室以与衬底处理室中的残留卤素反应，并将PSG膜的第一部分暴露于含磷气体，以在整个第一部分中提供基本均匀的磷浓度 的PSG电影。

    High density plasma gapfill deposition-etch-deposition process etchant
    26.
    发明授权
    High density plasma gapfill deposition-etch-deposition process etchant 失效
    高密度等离子体填隙沉积 - 蚀刻沉积工艺蚀刻剂

    公开(公告)号：US07972968B2

    公开(公告)日：2011-07-05

    申请号：US12193162

    申请日：2008-08-18

    申请人： Young S. Lee ,  Ying Rui ,  Dmitry Lubomirsky ,  Daniel J. Hoffman ,  Jang Gyoo Yang ,  Anchuan Wang

    发明人： Young S. Lee ,  Ying Rui ,  Dmitry Lubomirsky ,  Daniel J. Hoffman ,  Jang Gyoo Yang ,  Anchuan Wang

    IPC分类号： H01L21/461

    CPC分类号： H01L21/76224 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

    摘要： A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.

    摘要翻译： 将介电膜沉积在设置在基板处理室中的基板上的相邻凸起结构之间的间隙中的高密度等离子体蚀刻/蚀刻/蚀刻方法。 该方法通过从流入处理室的第一气体混合物形成高密度等离子体，将电介质膜的第一部分沉积在间隙内，通过流过包含CxFy的蚀刻剂气体来蚀刻沉积的电介质膜的第一部分， 的x至y大于或等于1：2，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将第二部分电介质膜沉积在第一部分上。

    Remote plasma clean process with cycled high and low pressure clean steps
    27.
    发明授权
    Remote plasma clean process with cycled high and low pressure clean steps 失效
    远程等离子清洁工艺，循环高低压清洁步骤

    公开(公告)号：US07967913B2

    公开(公告)日：2011-06-28

    申请号：US12508381

    申请日：2009-07-23

    申请人： Zhong Qiang Hua ,  Sanjay Kamath ,  Young S. Lee ,  Ellie Y. Yieh ,  Hien-Minh Huu Le ,  Anjana M. Patel ,  Sudhir R. Gondhalekar

    发明人： Zhong Qiang Hua ,  Sanjay Kamath ,  Young S. Lee ,  Ellie Y. Yieh ,  Hien-Minh Huu Le ,  Anjana M. Patel ,  Sudhir R. Gondhalekar

    IPC分类号： B08B6/00

    CPC分类号： B08B7/0035 ,  C23C16/4405

    摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.

    摘要翻译： 一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不需要的沉积物。 在一个实施例中，将衬底转移出衬底处理室，并且将含氟蚀刻剂气体的流引入形成反应性物质的远程等离子体源中。 产生反应物质从远程等离子体源到基底处理室的连续流动，同时重复高低压清洁步骤的循环。 在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。 在低压清洁步骤期间，将反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。