公开(公告)号：US10593760B2

公开(公告)日：2020-03-17

申请号：US16053400

申请日：2018-08-02

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Michael Thomason ,  Mohammed T. Quddus ,  Mihir Mudholkar

IPC: H01L29/08 ,  H01L29/47 ,  H01L21/285 ,  H01L21/04 ,  H01L29/872

Abstract: A method for forming a semiconductor device includes providing a region of semiconductor material. The method includes providing a trench structure having a trench extending into the region of semiconductor material from a first major surface, and a conductive material disposed within the trench and separated from the region of semiconductor material by a dielectric region. The method includes providing a Schottky contact region disposed adjacent to the first major surface and adjacent to the trench structure. In one example, providing the Schottky contact region comprises forming a first layer of material consisting essentially of titanium and having a first thickness; forming a second layer of material disposed adjacent to the first layer of material consisting essentially of nickel-platinum and having a second thickness; annealing the first layer of material and the second layer of material; and after the step of annealing, removing any unreacted portions of the first layer of material and the second layer of material. In another example, providing the Schottky contact region comprises providing a layer of material consisting essentially of nickel-chrome.

公开(公告)号：US10439075B1

公开(公告)日：2019-10-08

申请号：US16020719

申请日：2018-06-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mohammed Tanvir Quddus ,  Mihir Mudholkar

IPC: H01L29/78 ,  H01L29/872 ,  H01L27/02 ,  H01L27/07

Abstract: A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.

公开(公告)号：US10211060B2

公开(公告)日：2019-02-19

申请号：US15358361

申请日：2016-11-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Michael Thomason ,  Mohammed Tanvir Quddus ,  James Morgan ,  Mihir Mudholkar ,  Scott Donaldson ,  Gordon M. Grivna

IPC: H01L21/02 ,  H01L29/872 ,  H01L21/285 ,  H01L21/324 ,  H01L21/768 ,  H01L29/40 ,  H01L29/47 ,  H01L29/66 ,  H01L21/3213

Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor layer in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge semiconductor material migrating from the first semiconductor layer during annealing may be deposited over the first layer. The first semiconductor layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with the semiconductor material to form a Schottky barrier structure during the first annealing act.

公开(公告)号：US10177232B2

公开(公告)日：2019-01-08

申请号：US15657286

申请日：2017-07-24

Applicant: Semiconductor Components Industries, LLC

Inventor： Mohammed Tanvir Quddus ,  Mihir Mudholkar ,  Mingjiao Liu ,  Michael Thomason

IPC: H01L29/36 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66 ,  H01L21/265 ,  H01L21/266 ,  H01L29/872

Abstract: A Schottky device includes a plurality of mesa structures where one or more of the mesa structures includes a doped region having a multi-concentration dopant profile. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type. Trenches having sidewalls and floors are formed in the semiconductor material to form a plurality of mesa structures. A doped region having a multi-concentration impurity profile is formed between two trenches, where the impurity materials of the doped region having the multi-concentration impurity profile are of a second conductivity type. A Schottky contact is formed to at least one of the mesa structures having the doped region with the multi-concentration impurity profile.

公开(公告)号：US09905500B2

公开(公告)日：2018-02-27

申请号：US15202826

申请日：2016-07-06

Applicant: Semiconductor Components Industries, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Ali Salih ,  Mihir Mudholkar ,  Chun-Li Liu ,  Jason McDonald

IPC: H01L23/00 ,  H01L23/495

CPC classification number: H01L23/49575 ,  H01L23/49503 ,  H01L23/4951 ,  H01L23/49524 ,  H01L23/49531 ,  H01L23/49534 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49558 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L2224/40105 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/41109 ,  H01L2224/41112 ,  H01L2224/41174 ,  H01L2224/48245 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2224/37099 ,  H01L2224/45099

Abstract: In accordance with an embodiment, a semiconductor component includes a support having a first device receiving structure and a second device receiving structure and a contact extension that is common to the first and second device receiving structures. The first device receiving structure includes a device receiving area and the second device receiving structure includes a drain contact area. A III-N based semiconductor chip has a drain bond pad bonded to the drain contact area and a source bond pad bonded to the contact extension and a gate bond pad bonded to an interconnect. A portion of the silicon based semiconductor chip is bonded to the support device receiving area. In accordance with another embodiment, a method for manufacturing the semiconductor component includes coupling a III-N based semiconductor chip to a portion of the support a silicon based semiconductor chip to another portion of the support.

公开(公告)号：US09773895B2

公开(公告)日：2017-09-26

申请号：US15133644

申请日：2016-04-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Balaji Padmanabhan ,  Prasad Venkatraman ,  Peter Moens ,  Mihir Mudholkar ,  Joe Fulton ,  Philip Celaya ,  Stephen St. Germain ,  Chun-Li Liu ,  Jason McDonald ,  Alexander Young ,  Ali Salih

IPC: H01L29/15 ,  H01L29/747 ,  H01L29/74 ,  H01L23/495 ,  H01L29/205 ,  H01L29/40 ,  H01L29/423 ,  H01L29/778 ,  H01L25/11 ,  H03K17/687 ,  H01L23/00 ,  H01L27/088 ,  H01L21/8258 ,  H01L27/06

CPC classification number: H01L29/747 ,  H01L21/8258 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/40 ,  H01L25/115 ,  H01L25/18 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/0883 ,  H01L29/205 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/7416 ,  H01L29/742 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/0603 ,  H01L2224/40245 ,  H01L2224/48247 ,  H01L2224/49113 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H03K17/6874 ,  H03K2017/6878 ,  H03K2217/0009 ,  H03K2217/0018 ,  H01L2224/37099

Abstract: A half-bridge circuit can include a high-side HEMT, a high-side switch transistor, a low-side HEMT, and a low-side switch transistor. The die substrates of the HEMTs can be coupled to the sources of their corresponding switch transistors. In another aspect, a packaged electronic device for a half-bridge circuit can have a design that can use shorter connectors that help to reduce parasitic inductance and resistance. In a further aspect, a packaged electronic device for a half-bridge circuit can include more than one connection along the bottom of the package allows less lead connections along the periphery of the packaged electronic device and can allow for a smaller package.

公开(公告)号：US09647080B2

公开(公告)日：2017-05-09

申请号：US15040650

申请日：2016-02-10

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mohammed Tanvir Quddus ,  Mihir Mudholkar ,  Mark Griswold ,  Ali Salih

IPC: H01L29/00 ,  H01L29/47 ,  H01L29/66 ,  H01L29/872 ,  H01L21/223 ,  H01L21/265 ,  H01L21/285 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L29/47 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/28537 ,  H01L29/0615 ,  H01L29/66143 ,  H01L29/66643 ,  H01L29/7839 ,  H01L29/872 ,  H01L29/8725

Abstract: A Schottky device includes a barrier height adjustment layer in a portion of a semiconductor material. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type which has a barrier height adjustment layer of a second conductivity type that extends from a first major surface of the semiconductor material into the semiconductor material a distance that is less than a zero bias depletion boundary. A Schottky contact is formed in contact with the doped layer.

公开(公告)号：US20160172458A1

公开(公告)日：2016-06-16

申请号：US15040650

申请日：2016-02-10

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Mohammed Tanvir Quddus ,  Mihir Mudholkar ,  Mark Griswold ,  Ali Salih

IPC: H01L29/47 ,  H01L29/66 ,  H01L21/265 ,  H01L29/78 ,  H01L29/06 ,  H01L21/223 ,  H01L29/872 ,  H01L21/285

CPC classification number: H01L29/47 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/28537 ,  H01L29/0615 ,  H01L29/66143 ,  H01L29/66643 ,  H01L29/7839 ,  H01L29/872 ,  H01L29/8725

Abstract: A Schottky device includes a barrier height adjustment layer in a portion of a semiconductor material. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type which has a barrier height adjustment layer of a second conductivity type that extends from a first major surface of the semiconductor material into the semiconductor material a distance that is less than a zero bias depletion boundary. A Schottky contact is formed in contact with the doped layer.

公开(公告)号：US20150236172A1

公开(公告)日：2015-08-20

申请号：US14181207

申请日：2014-02-14

Applicant: Semiconductor Components Industries, LLC

Inventor： Mohammed Tanvir Quddus ,  Mihir Mudholkar ,  Mark Griswold ,  Ali Salih

IPC: H01L29/872 ,  H01L29/66

CPC classification number: H01L29/47 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/28537 ,  H01L29/0615 ,  H01L29/66143 ,  H01L29/66643 ,  H01L29/7839 ,  H01L29/872 ,  H01L29/8725

Abstract: A Schottky device includes a barrier height adjustment layer in a portion of a semiconductor material. In accordance with an embodiment, the Schottky device is formed from a semiconductor material of a first conductivity type which has a barrier height adjustment layer of a second conductivity type that extends from a first major surface of the semiconductor material into the semiconductor material a distance that is less than a zero bias depletion boundary. A Schottky contact is formed in contact with the doped layer.

Abstract translation: 肖特基器件包括在半导体材料的一部分中的势垒高度调节层。 根据一个实施例，肖特基器件由第一导电类型的半导体材料形成，该半导体材料具有从半导体材料的第一主表面延伸到半导体材料中的第二导电类型的势垒高度调节层， 小于零偏置耗尽边界。 形成与掺杂层接触的肖特基接触。