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    OXIDE SEMICONDUCTOR
    21.
    发明申请
    OXIDE SEMICONDUCTOR 审中-公开
    氧化物半导体

    公开(公告)号：US20150214309A1

    公开(公告)日：2015-07-30

    申请号：US14677131

    申请日：2015-04-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Noboru KIMIZUKA

    IPC: H01L29/26 ,  H01L29/04

    CPC classification number: C01G15/00 ,  C01G15/006 ,  C01P2002/60 ,  C01P2002/70 ,  C01P2002/74 ,  C01P2002/77 ,  C01P2004/04 ,  C01P2004/54 ,  C01P2006/10 ,  C01P2006/40 ,  H01L29/04 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/7869

    Abstract: To provide an oxide semiconductor with a novel structure. Such an oxide semiconductor is composed of an aggregation of a plurality of InGaZnO4 crystals each of which is larger than or equal to 1 nm and smaller than or equal to 3 nm, and in the oxide semiconductor, the plurality of InGaZnO4 crystals have no orientation. Alternatively, such an oxide semiconductor is such that a diffraction pattern like a halo pattern is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 300 nm, and that a diffraction pattern having a plurality of spots arranged circularly is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 1 nm and smaller than or equal to 30 nm.

    Abstract translation: 提供具有新颖结构的氧化物半导体。 这种氧化物半导体由多个InGaZnO 4晶体的聚集构成，每个InGaZnO 4晶体大于或等于1nm且小于或等于3nm，并且在氧化物半导体中，多个InGaZnO 4晶体没有取向。 或者，这样的氧化物半导体使得通过使用探针直径大于或等于300nm的电子束进行的电子衍射测量观察到类似晕圈图案的衍射图案，并且具有多个点的衍射图案 通过使用探针直径大于或等于1nm且小于或等于30nm的电子束进行的电子衍射测量观察圆形排列。

    OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
    22.
    发明申请
    OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 审中-公开
    氧化物半导体膜和半导体器件

    公开(公告)号：US20150179805A1

    公开(公告)日：2015-06-25

    申请号：US14635199

    申请日：2015-03-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

    IPC: H01L29/786 ,  H01L29/10 ,  H01L29/04

    CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.

    Abstract translation: 提供了具有更稳定的导电性的氧化物半导体膜。 氧化物半导体膜包含结晶区域。 氧化物半导体膜具有在散射矢量的大小为散射矢量的大小的区域中具有大于或等于0.4nm -1且小于或等于0.7nm -1的半高全宽的电子衍射强度的第一峰值 大于或等于3.3nm -1且小于或等于4.1nm -1。 氧化物半导体膜具有第二峰电子衍射强度，半导体全宽度大于或等于0.45nm-1且小于或等于1.4nm-1，其中散射矢量的大小为 大于或等于5.5nm -1且小于或等于7.1nm -1。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    24.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20140239298A1

    公开(公告)日：2014-08-28

    申请号：US14270697

    申请日：2014-05-06

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Tetsunori MARUYAMA

    IPC: H01L29/04 ,  H01L29/24 ,  H01L29/786 ,  H01L21/02

    CPC classification number: H01L29/06 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0259 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

    Abstract: A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.

    Abstract translation: 通过向其中使用氧化物半导体膜的通道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。 通过热处理可以具有第一晶体结构的氧化物半导体膜和通过热处理可以具有第二晶体结构的氧化物半导体膜被形成为堆叠，然后进行热处理; 因此，通过使用具有第二晶体结构的氧化物半导体膜作为种子发生晶体生长，从而形成具有第一晶体结构的氧化物半导体膜。 以这种方式形成的氧化物半导体膜用于晶体管的有源层。

    SEMICONDUCTOR DEVICE
    27.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240313121A1

    公开(公告)日：2024-09-19

    申请号：US18575942

    申请日：2022-07-08

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Satoru SAITO ,  Masahiro TAKAHASHI ,  Naoki OKUNO ,  Haruyuki BABA ,  Hitoshi KUNITAKE ,  Shunpei YAMAZAKI

    IPC: H01L29/786

    CPC classification number: H01L29/7869

    Abstract: A semiconductor device with a small variation in transistor electrical characteristics is provided. The semiconductor device includes an oxide; a first conductor, a second conductor, and a first insulator over the oxide; a second insulator over the first conductor and the second conductor; a third insulator over the first insulator; a third conductor over the third insulator; and a fourth insulator over the second insulator and the third conductor. The fourth insulator is in contact with a top surface of the second insulator and a top surface of the third conductor. The first insulator includes regions that are in contact with a top surface of the oxide, a side surface of the first conductor, a side surface of the second conductor, and a side surface of the second insulator. The oxide includes indium, gallium, aluminum, and zinc. Each of the first insulator and the fourth insulator includes aluminum and oxygen. The fourth insulator has an amorphous structure. The oxide has a concentration gradient in which an aluminum concentration increases toward the top surface of the oxide from the bottom surface of the oxide.

    POSITIVE ELECTRODE ACTIVE MATERIAL PARTICLE
    28.
    发明公开
    POSITIVE ELECTRODE ACTIVE MATERIAL PARTICLE 审中-公开

    公开(公告)号：US20240243255A1

    公开(公告)日：2024-07-18

    申请号：US18442470

    申请日：2024-02-15

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Masahiro TAKAHASHI ,  Teruaki OCHIAI ,  Yohei MOMMA ,  Ayae TSURUTA

    IPC: H01M4/36 ,  H01M4/505 ,  H01M4/525 ,  H01M4/02

    CPC classification number: H01M4/364 ,  H01M4/505 ,  H01M4/525 ,  H01M2004/028

    Abstract: A positive electrode active material particle with little deterioration is provided. A power storage device with little deterioration is provided. A highly safe power storage device is provided. The positive electrode active material particle includes a first crystal grain, a second crystal grain, and a crystal grain boundary positioned between the crystal grain and the second crystal grain; the first crystal grain and the second crystal grain include lithium, a transition metal, and oxygen; the crystal grain boundary includes magnesium and oxygen; and the positive electrode active material particle includes a region where the ratio of the atomic concentration of magnesium in the crystal grain boundary to the atomic concentration of the transition metal in first crystal grain and the second crystal grain is greater than or equal to 0.010 and less than or equal to 0.50.

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