摘要:
An embodiment includes a dual interconnection form in which power/ground pads and signal pads of a semiconductor chip are electrically connected to a package substrate in different connection manners. First connection members that electrically connect the power/ground pads with the substrate have relatively large cross-sectional dimensions in comparison to its length, for example, solder bumps or gold bumps. Second connection members that electrically connect the signal pads with the substrate have relatively small cross-sectional dimensions in comparison its length, for example, conductive wires or beam leads. Such different ways of electrically connecting different kinds of pads with the substrate realize the most suitable electrical performance, effectively meeting the needs of high speed and low power consumption of the semiconductor devices.
摘要:
A semiconductor module may include a circuit substrate with a first die on the circuit substrate and a second die on the first die. The first die may include at least one first data input/output pad on a first peripheral portion of the first die and at least one first control/address pad on a third peripheral portion, the third peripheral portion being separate from the first peripheral portion of the first die. The second die may include at least one second data input/output pad on a second peripheral portion and at least one second control/address pad on a fourth peripheral portion. The second peripheral portion of the second die is not overlapped with the first peripheral portion of the first die in plan view. The fourth peripheral portion of the second die overlaps at least a portion of the third peripheral portion of the first die.
摘要:
Provided are a semiconductor memory device and a method of driving the device which can improve a noise characteristic of a voltage signal supplied to a memory cell of the device. The semiconductor memory device includes a first semiconductor chip and one or more second semiconductor chips stacked on the first chip. The first chip includes an input/output circuit for sending/receiving a voltage signal, a data signal, and a control signal to/from an outside system. The one or more second semiconductor chips each include a memory cell region for storing data. The second semiconductor chips receive at least one signal through one or more signal paths that are formed outside the input/output circuit of the first chip.
摘要:
A wafer-level stack package includes semiconductor chips, first connection members, a second connection member, a substrate and an external connection terminal. The semiconductor chips have a power/ground pad and a signal pad. The first connection members are electrically connected to the power/ground pad and the signal pad of each of the semiconductor chips. The second connection member is electrically connected to at least one of the power/ground pads of each of the semiconductor chips, the power/ground pads being connected to the first connection members. The substrate supports the stacked semiconductor chips, the substrate including wirings that are electrically connected to the first connection members and the second connection member. The external connection terminal is provided on a surface of the substrate opposite to a surface where the semiconductor chips are stacked, wherein the external connection terminals are electrically connected to the wirings, respectively.
摘要:
A semiconductor module may include a circuit substrate with a first die on the circuit substrate and a second die on the first die. The first die may include at least one first data input/output pad on a first peripheral portion of the first die and at least one first control/address pad on a third peripheral portion, the third peripheral portion being separate from the first peripheral portion of the first die. The second die may include at least one second data input/output pad on a second peripheral portion and at least one second control/address pad on a fourth peripheral portion. The second peripheral portion of the second die is not overlapped with the first peripheral portion of the first die in plan view. The fourth peripheral portion of the second die overlaps at least a portion of the third peripheral portion of the first die.
摘要:
A semiconductor device package includes a substrate, first and second chip pads spaced apart over a surface of the substrate, and an insulating layer located over the surface of the substrate. The insulating layer includes a stepped upper surface defined by at least a lower reference potential line support surface portion, and an upper signal line support surface portion, where a thickness of the insulating layer at the lower reference potential line support surface portion is less than a thickness of the insulating layer at the upper signal line support surface portion. The package further includes a conductive reference potential line electrically connected to the first chip pad and located on the lower reference potential support surface portion of the insulating layer, a conductive signal line electrically connected to the second chip pad and located on the upper signal line support surface portion, and first and second external terminals electrically connected to the conductive reference potential line and the conductive signal line, respectively.
摘要:
A semiconductor device package includes a substrate, first and second chip pads spaced apart over a surface of the substrate, and an insulating layer located over the surface of the substrate. The insulating layer includes a stepped upper surface defined by at least a lower reference potential line support surface portion, and an upper signal line support surface portion, where a thickness of the insulating layer at the lower reference potential line support surface portion is less than a thickness of the insulating layer at the upper signal line support surface portion. The package further includes a conductive reference potential line electrically connected to the first chip pad and located on the lower reference potential support surface portion of the insulating layer, a conductive signal line electrically connected to the second chip pad and located on the upper signal line support surface portion, and first and second external terminals electrically connected to the conductive reference potential line and the conductive signal line, respectively.
摘要:
A wafer level semiconductor module may include a module board and an IC chip set mounted on the module board. The IC chip set may include a plurality of IC chips having scribe lines areas between the adjacent IC chips. Each IC chip may have a semiconductor substrate having an active surface with a plurality of chip pads and a back surface. A passivation layer may be provided on the active surface of the semiconductor substrate of each IC chip and may having openings through which the chip pads may be exposed. Sealing portions may be formed in scribe line areas.
摘要:
Provided are semiconductor packages and methods of manufacturing the semiconductor package. The semiconductor packages may include a substrate including a chip pad, a redistributed line which is electrically connected to the chip pad and includes an opening. The semiconductor packages may also include an external terminal connection portion, and an external terminal connection pad which is disposed at an opening and electrically connected to the redistributed line. The present general inventive concept can solve the problem where an ingredient of gold included in a redistributed line may be prevented from being diffused into an adjacent bump pad to form a void or an undesired intermetallic compound. In a chip on chip structure, a plurality of bumps of a lower chip are connected to an upper chip to improve reliability, diversity and functionality of the chip on chip structure.
摘要:
A wafer level semiconductor module may include a module board and an IC chip set mounted on the module board. The IC chip set may include a plurality of IC chips having scribe lines areas between the adjacent IC chips. Each IC chip may have a semiconductor substrate having an active surface with a plurality of chip pads and a back surface. A passivation layer may be provided on the active surface of the semiconductor substrate of each IC chip and may having openings through which the chip pads may be exposed. Sealing portions may be formed in scribe line areas.