STACK-TYPE SEMICONDUCTOR DEVICE HAVING COOLING PATH ON ITS BOTTOM SURFACE
    7.
    发明申请
    STACK-TYPE SEMICONDUCTOR DEVICE HAVING COOLING PATH ON ITS BOTTOM SURFACE 有权
    具有底部表面冷却路径的堆叠型半导体器件

    公开(公告)号:US20070267738A1

    公开(公告)日:2007-11-22

    申请号:US11751464

    申请日:2007-05-21

    IPC分类号: H01L23/34 H01L21/00

    摘要: Provided is a semiconductor device having a cooling path on its bottom surface. The stack-type semiconductor device having a cooling path comprises a stack-type semiconductor chip comprising a first semiconductor chip and a second semiconductor chip. The first semiconductor chip comprises a first surface in which a circuit unit is formed and a second surface in which a first cooling path is formed, and the second semiconductor chip comprises a first surface in which a circuit unit is formed and a second surface in which a second cooling path is formed. The second surface of the first semiconductor chip and the second surface of the second semiconductor chip are bonded to each other, and a third cooling path is formed in the middle of the stack-type semiconductor chip using the first and second cooling paths. Warpage of the stack-type semiconductor device is suppressed and heat is easily dissipated.

    摘要翻译: 提供了在其底面上具有冷却路径的半导体器件。 具有冷却路径的叠层型半导体器件包括:堆叠型半导体芯片,包括第一半导体芯片和第二半导体芯片。 第一半导体芯片包括其中形成有电路单元的第一表面和形成有第一冷却路径的第二表面,并且第二半导体芯片包括其中形成电路单元的第一表面和第二表面,其中第二表面 形成第二冷却路径。 第一半导体芯片的第二表面和第二半导体芯片的第二表面彼此接合,并且使用第一和第二冷却路径在堆叠型半导体芯片的中间形成第三冷却路径。 堆叠型半导体器件的翘曲被抑制,并且易于散热。

    FUSE STRUCTURE OF A SEMICONDUCTOR DEVICE
    8.
    发明申请
    FUSE STRUCTURE OF A SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的保险丝结构

    公开(公告)号:US20090302418A1

    公开(公告)日:2009-12-10

    申请号:US12478365

    申请日:2009-06-04

    IPC分类号: H01L23/525

    摘要: Provided is a fuse structure of a semiconductor device. The fuse structure may include an insulating layer pattern structure, a fuse and a protecting layer pattern. The insulating layer pattern structure may be formed on a substrate. The insulating layer pattern structure may have an opening. The fuse may be formed in the opening. The protecting layer pattern may be formed in the opening of the insulating layer pattern structure to cover the fuse.

    摘要翻译: 提供半导体器件的熔丝结构。 熔丝结构可以包括绝缘层图案结构,熔丝和保护层图案。 绝缘层图案结构可以形成在基板上。 绝缘层图案结构可以具有开口。 保险丝可以形成在开口中。 保护层图案可以形成在绝缘层图案结构的开口中以覆盖保险丝。