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    SYSTEM AND METHOD OF BEAM ENERGY IDENTIFICATION FOR SINGLE WAFER ION IMPLANTATION
    21.
    发明申请
    SYSTEM AND METHOD OF BEAM ENERGY IDENTIFICATION FOR SINGLE WAFER ION IMPLANTATION 有权
    用于单波长植入的光束能量鉴定系统和方法

    公开(公告)号：US20100038553A1

    公开(公告)日：2010-02-18

    申请号：US12190736

    申请日：2008-08-13

    Applicant: Shu Satoh

    Inventor： Shu Satoh

    IPC: G01K1/08 ,  H01J37/08

    CPC classification number: H01J37/304 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/053 ,  H01J2237/30433

    Abstract: The present invention involves a beam energy identification system, comprising an accelerated ion beam, wherein the accelerated ion beam is scanned in a fast scan axis within a beam scanner, wherein the beam scanner is utilized to deflect the accelerated ion beam into narrow faraday cups downstream of the scanner, wherein a difference in scanner voltage or current to position the beam into the Faraday cups is utilized to calculated the energy of ion beam.

    Abstract translation: 本发明涉及一种束能量识别系统，其包括加速的离子束，其中加速的离子束以束扫描器内的快速扫描轴扫描，其中该束扫描器用于将加速的离子束偏转到下游的法拉第杯中 其中利用扫描仪电压或电流将光束定位到法拉第杯中的差异来计算离子束的能量。

    Broad beam ion implantation architecture
    22.
    发明授权
    Broad beam ion implantation architecture 有权
    宽束离子注入架构

    公开(公告)号：US07528390B2

    公开(公告)日：2009-05-05

    申请号：US11540897

    申请日：2006-09-29

    Applicant: Shu Satoh

    Inventor： Shu Satoh

    IPC: H01J37/08 ,  H01J37/317 ,  H01J37/302

    CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J37/14 ,  H01J2237/049 ,  H01J2237/055 ,  H01J2237/057

    Abstract: An ion implantation system for providing a mass analyzed ribbon beam that comprises an ion beam source that includes a plasma source and an extraction component, wherein the extraction component is configured to extract a diverging ion beam and direct the ion beam to a window frame magnet assembly. The window frame magnet assembly comprises two pairs of coils orthogonally arranged within a window shaped yoke to produce an independently controllable uniform cross-field magnetic field. The first set of coils create an uniform field across the width of the diverging beam to convert it to a uniform parallel broad ion beam. The second set of coils bend the sheet of the ion beam in orthogonal direction to give mass dispersion for ion mass selection.

    Abstract translation: 一种用于提供质量分析的带状束的离子注入系统，其包括包括等离子体源和提取部件的离子束源，其中所述提取部件被配置为提取发散的离子束并将所述离子束引导到窗框磁体组件 。 窗框磁体组件包括正交布置在窗形磁轭内的两对线圈，以产生可独立控制的均匀的交叉磁场。 第一组线圈在发散光束的宽度上形成均匀的场，以将其转换成均匀的平行宽离子束。 第二组线圈在垂直方向上弯曲离子束的片材，以提供用于离子质量选择的质量分散。

    Versatile beam glitch detection system
    24.
    发明授权
    Versatile beam glitch detection system 有权
    多功能射束毛刺检测系统

    公开(公告)号：US08227773B2

    公开(公告)日：2012-07-24

    申请号：US12846313

    申请日：2010-07-29

    Applicant: Shu Satoh

    Inventor： Shu Satoh

    IPC: H01J37/317 ,  H01J37/256 ,  G21K5/10

    CPC classification number: H01J37/3045 ,  H01J37/3171 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/31703

    Abstract: A glitch duration threshold is determined based on an allowable dose uniformity, a number of passes of a workpiece through an ion beam, a translation velocity, and a beam size. A beam dropout checking routine repeatedly measures beam current during implantation. A beam dropout counter is reset each time beam current is sufficient. On a first observation of beam dropout, a counter is incremented and a position of the workpiece is recorded. On each succeeding measurement, the counter is incremented if beam dropout continues, or reset if beam is sufficient. Thus, the counter indicates a length of each dropout in a unit associated with the measurement interval. The implant routine stops only when the counter exceeds the glitch duration threshold and a repair routine is performed, comprising recalculating the glitch duration threshold based on one fewer translations of the workpiece through the beam, and performing the implant routine starting at the stored position.

    Abstract translation: 基于允许的剂量均匀性，通过离子束的工件的通过次数，平移速度和光束尺寸来确定毛刺持续时间阈值。 光束离子检测程序在植入期间重复测量束电流。 每次射束电流足够时，光束压差计数器都被复位。 在第一次观察光束偏移时，计数器递增，并记录工件的位置。 在每次后续的测量中，如果光束失效继续，计数器就会增加，如果光束足够，则重置。 因此，计数器指示与测量间隔相关联的单元中的每个压差的长度。 只有当计数器超过毛刺持续时间阈值并且执行修复例程时，植入程序才停止，包括基于通过束的工件的一个较少的平移重新计算毛刺持续时间阈值，以及从存储位置开始执行注入程序。

    System and method of performing uniform dose implantation under adverse conditions
    25.
    发明授权
    System and method of performing uniform dose implantation under adverse conditions 有权
    在不利条件下进行均匀剂量注入的系统和方法

    公开(公告)号：US08071964B2

    公开(公告)日：2011-12-06

    申请号：US12431081

    申请日：2009-04-28

    Applicant: Shu Satoh

    Inventor： Shu Satoh

    IPC: H01J37/317 ,  H01J37/256

    CPC classification number: H01J37/244 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24564 ,  H01J2237/30405 ,  H01J2237/30455 ,  H01J2237/31703

    Abstract: An ion implantation system and associated method includes a scanner configured to scan a pencil shaped ion beam into a ribbon shaped ion beam, and a beam bending element configured to receive the ribbon shaped ion beam having a first direction, and bend the ribbon shaped ion beam to travel in a second direction. The system further includes an end station positioned downstream of the beam bending element, wherein the end station is configured to receive the ribbon shaped ion beam traveling in the second direction, and secure a workpiece for implantation thereof. In addition, the system includes a beam current measurement system located at an exit opening of the beam bending element that is configured to measure a beam current of the ribbon shaped ion beam at the exit opening of the beam bending element.

    Abstract translation: 离子注入系统和相关方法包括扫描器，其被配置为将铅笔形离子束扫描成带状离子束，以及梁弯曲元件，其构造成接收具有第一方向的带状离子束，并且弯曲带状离子束 沿第二个方向行驶。 所述系统还包括位于所述梁弯曲元件下游的终端站，其中所述端站被构造成接收沿所述第二方向传播的所述带状离子束，并且固定用于其注入的工件。 此外，该系统包括位于梁弯曲元件的出口处的束电流测量系统，其被配置为测量在束弯曲元件的出口处的带状离子束的束电流。

    Method and system for increasing beam current above a maximum energy for a charge state
    26.
    发明授权
    Method and system for increasing beam current above a maximum energy for a charge state 有权
    用于在充电状态下将束电流增加到最大能量以上的方法和系统

    公开(公告)号：US08035080B2

    公开(公告)日：2011-10-11

    申请号：US12609912

    申请日：2009-10-30

    Applicant: Shu Satoh

    Inventor： Shu Satoh

    IPC: H01J37/08 ,  B01D59/44

    CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0048 ,  H01J2237/0815

    Abstract: Methods and a system of an ion implantation system are disclosed that are capable of increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Positive ions having a first positive charge state are selected into an accelerator. The positive ions of the first positive charge state are accelerated in acceleration stages and stripped to convert them to positive ions of a second charge state. A second kinetic energy level higher than the maximum kinetic energy level of the first charge state can be obtained.

    Abstract translation: 公开了一种离子注入系统的方法和系统，其能够在不改变离子源处的电荷状态的情况下从离子源增加高于第一电荷状态的最大动能的束电流。 选择具有第一正电荷状态的正离子进入加速器。 第一正电荷状态的正离子在加速阶段加速并剥离，以将其转换成第二电荷状态的正离子。 可以获得高于第一充电状态的最大动能水平的第二动能水平。

    SYSTEM AND METHOD OF CONTROLLING BROAD BEAM UNIFORMITY
    29.
    发明申请
    SYSTEM AND METHOD OF CONTROLLING BROAD BEAM UNIFORMITY 有权
    控制广播光束均匀性的系统和方法

    公开(公告)号：US20090321657A1

    公开(公告)日：2009-12-31

    申请号：US12145713

    申请日：2008-06-25

    Applicant: Shu Satoh ,  Edward C. Eisner ,  Manny Sieradzki

    Inventor： Shu Satoh ,  Edward C. Eisner ,  Manny Sieradzki

    IPC: H01J27/02 ,  H01J27/00

    CPC classification number: H01J37/05 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/057 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/31703

    Abstract: An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.

    Abstract translation: 一种离子束均匀性控制系统，其中所述均匀性控制系统包括包围独立控制的气体射流阵列的差分泵送室，其中单独控制的气体射流的气体压力由控制器供电以改变电荷交换离子的分数 ，并且其中气体和离子之间的电荷交换反应改变具有宽离子束的原始电荷状态的离子的分数，其中使用产生磁场的偏转器去除宽离子束的电荷交换部分， 用于测量宽离子束分布的法拉第杯型材分析仪; 以及基于提供给控制器的反馈来调节单独控制的气体射流，以获得所需的宽离子束。

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