Abstract:
A 400 Gb/s transmitter is integrated on a silicon substrate. The transmitter uses four gain chips, sixteen lasers, four modulators to modulate the sixteen lasers at 25 Gb/s, and four multiplexers to produce four optical outputs. Each optical output can transmit at 100 Gb/s to produce a 400 Gb/s transmitter. Other variations are also described.
Abstract:
A photonics system includes a transmit photonics module and a receive photonics module. The photonics system also includes a transmit waveguide coupled to the transmit photonics module, a first optical switch integrated with the transmit waveguide, and a diagnostics waveguide optically coupled to the first optical switch. The photonics system further includes a receive waveguide coupled to the receive photonics module and a second optical switch integrated with the receive waveguide and optically coupled to the diagnostics waveguide.
Abstract:
Fabricating a multilevel composite semiconductor structure includes providing a first substrate comprising a first material; dicing a second substrate to provide a plurality of dies; mounting the plurality of dies on a third substrate; joining the first substrate and the third substrate to form a composite structure; and joining a fourth substrate and the composite structure.
Abstract:
Fabricating a multilevel composite semiconductor structure includes providing a first substrate comprising a first material; dicing a second substrate to provide a plurality of dies; mounting the plurality of dies on a third substrate; joining the first substrate and the third substrate to form a composite structure; and joining a fourth substrate and the composite structure.
Abstract:
A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.
Abstract:
A composite photonic device comprises a platform, a chip, and a contact layer. The platform comprises silicon. The chip is made of a III-V material. The contact layer has indentations to help control a flow of solder during bonding of the platform with the chip. In some embodiments, pedestals are placed under an optical path to prevent solder from flowing between the chip and the platform at the optical path.
Abstract:
An integrated non-reciprocal polarization rotator comprises a substrate, a Faraday crystal, a first waveguide, and a second waveguide. The substrate has a recess extending to a predetermined depth. The Faraday crystal is mounted in the recess and optically coupled with the first waveguide and the second waveguide.
Abstract:
A method of operating a BPSK modulator includes receiving an RF signal at the BPSK modulator and splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion. The method also includes receiving the first portion at a first arm of the BPSK modulator, receiving the second portion at a second arm of the BPSK modulator, applying a first tone to the first arm of the BPSK modulator, and applying a second tone to the second arm of the BPSK modulator. The method further includes measuring a power associated with an output of the BPSK modulator and adjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power.
Abstract:
A multilayer semiconductor has stacks of composite semiconductor materials. Multiple composite devices are bonded on a silicon-on-insulator wafer forming an integrated device.
Abstract:
A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a III-V material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening such that the active region of the chip is aligned with the device layer of the platform. A coating hermitically seals the chip in the platform.