公开(公告)号：US11114339B2

公开(公告)日：2021-09-07

申请号：US16686682

申请日：2019-11-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ling-Fu Nieh ,  Chun-Wei Hsu ,  Pinlei Edmund Chu ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Yi-Sheng Lin

IPC: H01L21/768 ,  H01L29/78 ,  H01L21/321 ,  H01L21/8238 ,  H01L23/485 ,  H01L29/08 ,  C09G1/02 ,  H01L21/02 ,  H01L29/417 ,  H01L21/8234

Abstract: A method of manufacturing a device includes exposing at least one of a source/drain contact plug or a gate contact plug to a metal ion source solution during a manufacturing process, wherein a constituent metal of a metal ion in the metal ion source solution and the at least one source/drain contact plug or gate contact plug is the same. If the source/drain contact plug or the gate contact plug is formed of cobalt, the metal ion source solution includes a cobalt ion source solution. If the source/drain contact plug or the gate contact plug is formed of tungsten, the metal ion source solution includes a tungsten ion source solution.

公开(公告)号：US20190161711A1

公开(公告)日：2019-05-30

申请号：US16152965

申请日：2018-10-05

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Pinlei Edmund Chu ,  Chun-Wei Hsu ,  Ling-Fu Nieh ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Yi-Sheng Lin

IPC: C11D11/00 ,  H01L21/02 ,  C11D7/26

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

公开(公告)号：US09633832B2

公开(公告)日：2017-04-25

申请号：US15049420

申请日：2016-02-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Shich-Chang Suen ,  Li-Chieh Wu ,  Chi-Jen Liu ,  He Hui Peng ,  Liang-Guang Chen ,  Yung-Chung Chen

IPC: H01L21/3205 ,  H01L21/4763 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L21/768 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L21/02068 ,  H01L21/02063 ,  H01L21/0234 ,  H01L21/28079 ,  H01L21/28132 ,  H01L21/288 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76804 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76895 ,  H01L29/401 ,  H01L29/66545

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

公开(公告)号：US09564511B2

公开(公告)日：2017-02-07

申请号：US14937301

申请日：2015-11-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chi-Jen Liu ,  Li-Chieh Wu ,  Liang-Guang Chen ,  Shich-Chang Suen

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/02 ,  H01L21/321 ,  H01L21/768 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/66545 ,  H01L21/02074 ,  H01L21/28088 ,  H01L21/28123 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76895 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6659

Abstract: A method includes forming a dummy gate of a transistor at a surface of a wafer, removing the dummy gate, and filling a metallic material into a trench left by the removed dummy gate. A Chemical Mechanical Polish (CMP) is then performed on the metallic material, wherein a remaining portion of the metallic material forms a metal gate of the transistor. After the CMP, a treatment is performed on an exposed top surface of the metal gate using an oxidation-and-etching agent comprising chlorine and oxygen.

Abstract translation: 一种方法包括在晶片的表面上形成晶体管的虚拟栅极，去除虚拟栅极，并将金属材料填充到由去除的虚拟栅极留下的沟槽中。 然后对金属材料进行化学机械抛光（CMP），其中金属材料的剩余部分形成晶体管的金属栅极。 在CMP之后，使用包含氯和氧的氧化 - 蚀刻剂在金属栅极的暴露的顶表面上进行处理。

公开(公告)号：US20150200089A1

公开(公告)日：2015-07-16

申请号：US14152497

申请日：2014-01-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Shich-Chang SUEN ,  Li-Chieh Wu ,  Chi-Jen Liu ,  He Hui Peng ,  Liang-Guang Chen ,  Yung-Chung Chen

IPC: H01L21/02 ,  H01L21/28

CPC classification number: H01L21/02068 ,  H01L21/02063 ,  H01L21/0234 ,  H01L21/28079 ,  H01L21/28132 ,  H01L21/288 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76804 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76895 ,  H01L29/401 ,  H01L29/66545

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

Abstract translation: 本公开提供了一种用于形成集成电路（IC）结构的方法。 该方法包括提供金属栅极（MG），形成在MG上的蚀刻停止层（ESL）以及形成在ESL上的电介质层。 该方法还包括蚀刻ESL和介电层以形成沟槽。 暴露在沟槽中的MG的表面被氧化以在MG上形成第一氧化物层。 该方法还包括使用H 3 PO 4溶液去除第一氧化物层。

公开(公告)号：US11410846B2

公开(公告)日：2022-08-09

申请号：US17094563

申请日：2020-11-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Shich-Chang Suen ,  Li-Chieh Wu ,  Chi-Jen Liu ,  He Hui Peng ,  Liang-Guang Chen ,  Yung-Chung Chen

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L21/768 ,  H01L21/288 ,  H01L29/66

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

公开(公告)号：US20210391208A1

公开(公告)日：2021-12-16

申请号：US16902203

申请日：2020-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Chi-Hsiang Shen ,  Ting-Hsun Chang ,  Li-Chieh Wu ,  Hung Yen ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Kei-Wei Chen

IPC: H01L21/768 ,  C09G1/02 ,  C09K3/14

Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.

公开(公告)号：US10961487B2

公开(公告)日：2021-03-30

申请号：US16152965

申请日：2018-10-05

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Pinlei Edmund Chu ,  Chun-Wei Hsu ,  Ling-Fu Nieh ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Yi-Sheng Lin

IPC: H01L21/02 ,  H01L21/302 ,  B08B1/00 ,  C11D11/00 ,  C11D7/26 ,  H01L21/321

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

公开(公告)号：US20210082688A1

公开(公告)日：2021-03-18

申请号：US17094563

申请日：2020-11-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Shich-Chang Suen ,  Li-Chieh Wu ,  Chi-Jen Liu ,  He Hui Peng ,  Liang-Guang Chen ,  Yung-Chung Chen

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L21/768 ,  H01L29/40 ,  H01L21/288

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.

公开(公告)号：US10937691B2

公开(公告)日：2021-03-02

申请号：US16559336

申请日：2019-09-03

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia Hsuan Lee ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Jian-Ci Lin ,  Chi-Jen Liu ,  Yi-Sheng Lin ,  Yang-Chun Cheng ,  Liang-Guang Chen ,  Kuo-Hsiu Wei ,  Kei-Wei Chen

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/3105 ,  C09G1/02

Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.