公开(公告)号：US20210164103A1

公开(公告)日：2021-06-03

申请号：US17106521

申请日：2020-11-30

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO ,  Masahito SUGIURA ,  Makoto WADA

IPC: C23C16/511 ,  H01L21/02 ,  H01J37/32 ,  C23C16/26 ,  C23C16/44

Abstract: There is provided a film forming method of forming a carbon-containing film by a microwave plasma from a microwave source, the film forming method including: a dummy step of performing a dummy process by generating plasma of a first carbon-containing gas within a processing container; a placement step of placing a substrate on a stage within the processing container; and a film forming step of forming the carbon-containing film on the substrate using plasma of a second carbon-containing gas.

公开(公告)号：US20210047186A1

公开(公告)日：2021-02-18

申请号：US17041649

申请日：2019-03-01

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO

IPC: C01B32/186 ,  H01M4/62 ,  H05H1/46

Abstract: A method of forming a graphene structure includes providing a substrate to be processed and forming a graphene structure on a surface of the substrate to be processed through a plasma CVD using plasma of a processing gas including a carbon-containing gas and an oxidizing gas in a state in which the surface of the substrate to be processed does not have a catalytic function.

公开(公告)号：US20190085457A1

公开(公告)日：2019-03-21

申请号：US16131458

申请日：2018-09-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO

IPC: C23C16/511 ,  H01L21/02 ,  H01J37/32 ,  C23C16/26 ,  C23C16/52

Abstract: A graphene structure forming method for forming a graphene structure is provided. The method comprises preparing a target substrate, and forming the graphene structure on a surface of the target substrate by remote microwave plasma CVD using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function.

公开(公告)号：US20180226261A1

公开(公告)日：2018-08-09

申请号：US15888468

申请日：2018-02-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO

IPC: H01L21/3065 ,  H01L29/16 ,  H01L21/30 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/3222 ,  H01J37/32724 ,  H01J2237/3345 ,  H01L21/3003 ,  H01L21/67069 ,  H01L29/1606

Abstract: A method for anisotropically etching graphene includes generating hydrogen plasma by microwave plasma, and anisotropically etching graphene by the generated hydrogen plasma.

公开(公告)号：US20170029942A1

公开(公告)日：2017-02-02

申请号：US15294971

申请日：2016-10-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi MATSUMOTO

IPC: C23C16/02 ,  C23C16/511 ,  C01B31/04 ,  B01J37/02 ,  B01J23/755 ,  B01J35/02 ,  B01J37/34 ,  C23C16/26 ,  B01J23/75

CPC classification number: C23C16/02 ,  B01J23/40 ,  B01J23/42 ,  B01J23/44 ,  B01J23/462 ,  B01J23/70 ,  B01J23/72 ,  B01J23/75 ,  B01J23/755 ,  B01J35/002 ,  B01J35/02 ,  B01J37/0244 ,  B01J37/349 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C23C16/26 ,  C23C16/511 ,  Y10S977/734 ,  Y10S977/843

Abstract: A pretreatment method is performed before a graphene grows by performing a CVD method on a catalyst metal layer formed on a workpiece. The method includes a plasma treatment process in which the catalyst metal layer is activated by applying plasma of a treatment gas including a reducing gas and a nitrogen-containing gas on the catalyst metal layer.

Abstract translation: 在通过在形成在工件上的催化剂金属层上进行CVD法在石墨烯生长之前进行预处理方法。 该方法包括等离子体处理工艺，其中通过在催化剂金属层上施加包括还原气体和含氮气体的处理气体的等离子体来激活催化剂金属层。

公开(公告)号：US20160042958A1

公开(公告)日：2016-02-11

申请号：US14819038

申请日：2015-08-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke NISHIDE ,  Takashi MATSUMOTO ,  Munehito KAGAYA ,  Ryota IFUKU

IPC: H01L21/285 ,  C23C16/52 ,  H01L21/67 ,  C23C16/18 ,  C23C16/26 ,  C23C16/46 ,  C23C16/455

CPC classification number: C23C16/26 ,  C01B31/0453 ,  C01B32/186 ,  C23C16/0218 ,  C23C16/0281 ,  C23C16/18 ,  C23C16/45523 ,  C23C16/46 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/67103 ,  H01L21/68742 ,  H01L21/76864 ,  H01L21/76876 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.

Abstract translation: 形成石墨烯基膜的方法包括：通过使用氢气和氨气的有机金属化合物的化学气相沉积（CVD）在基板上形成作为石墨烯的基膜的金属膜; 将基板加热至除去形成的金属膜中的杂质作为气体的温度; 并将基板加热到金属膜中生长金属晶粒的温度，其中将基板加热到基板的温度达到在金属膜中生长金属晶粒的温度高于 在将衬底加热时的衬底的温度作为气体除去形成的金属膜中包含的杂质的温度。

公开(公告)号：US20150259801A1

公开(公告)日：2015-09-17

申请号：US14724913

申请日：2015-05-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi MATSUMOTO ,  Masahito SUGIURA ,  Kenjiro KOIZUMI ,  Yusaku KASHIWAGI

IPC: C23C16/503 ,  C23C16/26 ,  C23C16/44 ,  C23C16/511 ,  C23C16/458 ,  C23C16/455

CPC classification number: C23C16/503 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C23C16/26 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/511 ,  H01L21/28556 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member.

Abstract translation: 形成碳纳米管的方法包括制备具有其上形成有一个或多个开口的表面的目标物体，每个开口在其底部具有催化剂金属层; 在催化剂金属层上进行氧等离子体处理; 以及通过对经受氧等离子体处理的金属催化剂层进行氢等离子体处理来激活催化剂金属层的表面。 该方法还包括通过在处理室中提供具有在目标物体上方的多个通孔的电极部件，然后在活化的催化剂金属层上通过等离子体CVD将碳纳米管生长在活性催化剂金属层上，从而在目标物体的开口中填充碳纳米管 在电极构件上方产生的等离子体中的活性物质通过通孔朝向目标物体扩散，同时向电极构件施加DC电压。

公开(公告)号：US20140151334A1

公开(公告)日：2014-06-05

申请号：US14176197

申请日：2014-02-10

Applicant: Tokyo Electron Limited

Inventor： Takashi MATSUMOTO ,  Osayuki Akiyama

IPC: C01B31/08

CPC classification number: C01B32/168 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/176 ,  H01J9/025

Abstract: A method for processing carbon nanotubes includes positioning in a treatment chamber of a carbon nanotube processing apparatus a substrate having multiple carbon nanotubes bundled together and oriented substantially perpendicular to a surface of the substrate, and introducing a microwave into the treatment chamber from a planar antenna having multiple microwave radiation holes such that plasma of an etching gas is generated and that the plasma etches the carbon nanotubes starting from one end of the carbon nanotubes bundled together.

Abstract translation: 一种碳纳米管的处理方法，其特征在于，在碳纳米管处理装置的处理室中，将具有多个碳纳米管的基板在基板的表面垂直配置的基板上进行定位，并将微波从具有 产生多个微波辐射孔，使得产生蚀刻气体的等离子体，并且等离子体从碳纳米管的一端开始捆扎在一起，从而蚀刻碳纳米管。

公开(公告)号：US20240254626A1

公开(公告)日：2024-08-01

申请号：US18564641

申请日：2022-05-17

Applicant: Tokyo Electron Limited

Inventor： Hiroki YAMADA ,  Ryota IFUKU ,  Takashi MATSUMOTO ,  Nobutake KABUKI

IPC: C23C16/455 ,  C23C16/26 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/45538 ,  C23C16/26 ,  C23C16/45534 ,  C23C16/45544 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32201 ,  H01J2237/332

Abstract: A film forming method of forming a graphene film includes a loading process of loading a substrate into a processing container, a first process of forming the graphene film on the substrate using plasma of a first processing gas that includes a carbon-containing gas, and a second process of forming a doped graphene film on at least one of the substrate and the graphene film using plasma of a second processing gas that includes a dopant gas.

公开(公告)号：US20230257871A1

公开(公告)日：2023-08-17

申请号：US18002312

申请日：2021-06-11

Applicant: Tokyo Electron Limited

Inventor： Takashi MATSUMOTO ,  Ryota IFUKU

IPC: C23C16/26 ,  C01B32/186 ,  C23C16/511

CPC classification number: C23C16/26 ,  C01B32/186 ,  C23C16/511

Abstract: A film forming method includes a first step of supplying a first aromatic hydrocarbon gas having a first functional group to a substrate provided with an underlayer film, and a second step of activating the first aromatic hydrocarbon gas adsorbed on a surface of the underlayer film by plasma of a first reaction gas that contains at least a rare gas.