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    GIGASONIC CLEANING TECHNIQUES
    22.
    发明申请
    GIGASONIC CLEANING TECHNIQUES 审中-公开
    GIGASONIC清洗技术

    公开(公告)号：US20170066021A1

    公开(公告)日：2017-03-09

    申请号：US14844406

    申请日：2015-09-03

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Ying-Hsueh Chang Chien ,  Chi-Ming Yang

    IPC: B08B3/12 ,  H01L21/67 ,  H01L21/02

    CPC classification number: B08B3/12 ,  B06B3/00 ,  C11D11/0047 ,  C11D11/007 ,  H01L21/02057 ,  H01L21/67057 ,  H01L22/12 ,  H01L22/26

    Abstract: The present disclosure provides a semiconductor cleaning system. The cleaning system includes a chamber to retain a cleaning solution, and a gigasonic frequency generator. The gigasonic frequency generator is configured to generate an electrical signal corresponding to a range of gigahertz frequencies. A transducer is configured to transform the electrical signal to a mechanical wave of pressure and displacement that propagates through the cleaning solution with oscillations within the range of gigahertz frequencies.

    Abstract translation: 本公开提供了一种半导体清洁系统。 清洁系统包括一个保持清洁溶液的腔室和一个声音发生器。 声音频率发生器被配置为产生对应于千兆赫兹频率范围的电信号。 换能器被配置为将电信号转换成压力和位移的机械波，其通过在千兆赫兹频率范围内的振荡传播通过清洁溶液。

    Layer by layer electro chemical plating (ECP) process
    23.
    发明授权
    Layer by layer electro chemical plating (ECP) process 有权
    逐层电化学镀（ECP）工艺

    公开(公告)号：US09435048B2

    公开(公告)日：2016-09-06

    申请号：US13778412

    申请日：2013-02-27

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Su-Horng Lin ,  Chi-Ming Yang

    IPC: C25D5/18 ,  C25D7/12 ,  C25D21/12 ,  C25D17/00

    CPC classification number: C25D5/18 ,  C25D7/12 ,  C25D17/001 ,  C25D21/12

    Abstract: The present disclosure relates to an electro-chemical plating (ECP) process that provides for an isotropic deposition, and a related apparatus. In some embodiments, the disclosed ECP process is performed by providing a substrate into an electroplating solution comprising a plurality of ions of a material to be deposited. A periodic patterned signal, which alternates between a first value and a different second value, is applied to the substrate. When the periodic patterned signal is at the first value, ions from the electroplating solution affix to the substrate. When the periodic patterned signal is at the second value, ions from the electroplating solution do not affix to the substrate. By using the periodic patterned signal to perform electro-chemical plating, the deposition rate of the plating process is reduced, resulting in an isotropic deposition over the substrate that mitigates gap fill problems (e.g., void formation).

    Abstract translation: 本公开涉及提供各向同性沉积的电化学电镀（ECP）工艺，以及相关设备。 在一些实施方案中，所公开的ECP方法是通过将衬底提供到包括待沉积材料的多个离子的电镀溶液中来进行的。 在第一值和不同的第二值之间交替的周期性图案化信号被施加到衬底。 当周期性图案化信号处于第一值时，来自电镀溶液的离子粘附到基底上。 当周期性图案化信号处于第二值时，来自电镀溶液的离子不贴附到衬底上。 通过使用周期性图案化信号进行电化学电镀，电镀工艺的沉积速率降低，导致衬底上的各向同性沉积，以减轻间隙填充问题（例如，空隙形成）。

    Layer by Layer Electro Chemical Plating (ECP) Process
    24.
    发明申请
    Layer by Layer Electro Chemical Plating (ECP) Process 有权
    逐层电化学镀（ECP）工艺

    公开(公告)号：US20140238864A1

    公开(公告)日：2014-08-28

    申请号：US13778412

    申请日：2013-02-27

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.

    Inventor： Su-Horng Lin ,  Chi-Ming Yang

    IPC: C25D5/18 ,  C25D17/00 ,  C25D21/12 ,  C25D7/12

    CPC classification number: C25D5/18 ,  C25D7/12 ,  C25D17/001 ,  C25D21/12

    Abstract: The present disclosure relates to an electro-chemical plating (ECP) process that provides for an isotropic deposition, and a related apparatus. In some embodiments, the disclosed ECP process is performed by providing a substrate into an electroplating solution comprising a plurality of ions of a material to be deposited. A periodic patterned signal, which alternates between a first value and a different second value, is applied to the substrate. When the periodic patterned signal is at the first value, ions from the electroplating solution affix to the substrate. When the periodic patterned signal is at the second value, ions from the electroplating solution do not affix to the substrate. By using the periodic patterned signal to perform electro-chemical plating, the deposition rate of the plating process is reduced, resulting in an isotropic deposition over the substrate that mitigates gap fill problems (e.g., void formation).

    Abstract translation: 本公开涉及提供各向同性沉积的电化学电镀（ECP）工艺，以及相关设备。 在一些实施方案中，所公开的ECP方法是通过将衬底提供到包括待沉积材料的多个离子的电镀溶液中来进行的。 在第一值和不同的第二值之间交替的周期性图案化信号被施加到衬底。 当周期性图案化信号处于第一值时，来自电镀溶液的离子粘附到基底上。 当周期性图案化信号处于第二值时，来自电镀溶液的离子不贴附到衬底上。 通过使用周期性图案化信号进行电化学电镀，电镀工艺的沉积速率降低，导致衬底上的各向同性沉积，从而缓解间隙填充问题（例如，空隙形成）。

    Bottom-Up PEALD Process
    25.
    发明申请
    Bottom-Up PEALD Process 有权
    自下而上的PEALD过程

    公开(公告)号：US20140227861A1

    公开(公告)日：2014-08-14

    申请号：US13762547

    申请日：2013-02-08

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Lin-Jung Wu ,  Su-Horng Lin ,  Chi-Ming Yang

    IPC: H01L21/326

    CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/45542 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32706 ,  H01J37/32926 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/687

    Abstract: The present disclosure relates to a method and apparatus for performing a plasma enhanced ALD (PEALD) process that provides for improved step coverage. The process introduces a precursor gas into a processing chamber comprising a semiconductor workpiece. The first gas is ionized to from a plurality of ionized precursor molecules. A bias voltage is subsequently applied to the workpiece. The bias voltage attracts the ionized precursor molecules to the workpiece, so as to provide anisotropic coverage of the workpiece with the precursor gas. A reactant gas is introduced into the processing chamber. A plasma is subsequently ignited from the reactant gas, causing the reactant gas to react with the ionized precursor molecules that have been deposited onto the substrate to form a deposited layer on the workpiece.

    Abstract translation: 本公开涉及一种用于执行等离子体增强ALD（PEALD）过程的方法和装置，其提供改进的步骤覆盖。 该方法将前体气体引入到包括半导体工件的处理室中。 将第一气体从多个离子化的前体分子离子化。 随后将偏置电压施加到工件。 偏置电压将离子化的前体分子吸引到工件，以便为前体气体提供工件的各向异性覆盖。 将反应气体引入处理室。 等离子体随后从反应气体中点燃，使反应气体与沉积在基底上的离子化前体分子反应，在工件上形成沉积层。

    Method of manufacturing a semiconductor device
    26.
    发明授权
    Method of manufacturing a semiconductor device 有权

    公开(公告)号：US12272554B2

    公开(公告)日：2025-04-08

    申请号：US18227231

    申请日：2023-07-27

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Jia-Lin Wei ,  Ming-Hui Weng ,  Chih-Cheng Liu ,  Yi-Chen Kuo ,  Yen-Yu Chen ,  Yahru Cheng ,  Jr-Hung Li ,  Ching-Yu Chang ,  Tze-Liang Lee ,  Chi-Ming Yang

    IPC: H01L21/033 ,  G03F1/22 ,  G03F7/00 ,  H01L21/308

    Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers. The multilayer photoresist structure is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying developer to the selectively exposed multilayer photoresist structure to form the pattern.

    High throughput CMP platform
    30.
    发明授权
    High throughput CMP platform 有权

    公开(公告)号：US10513006B2

    公开(公告)日：2019-12-24

    申请号：US13758378

    申请日：2013-02-04

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Jiann Lih Wu ,  Jason Shen ,  Soon-Kang Huang ,  James Jeng-Jyi Hwang ,  Chi-Ming Yang

    IPC: B24B37/005

    Abstract: A chemical-mechanical polishing system has a first polishing apparatus configured to perform a first chemical-mechanical polish on a workpiece and a second polishing apparatus configured to perform a second chemical-mechanical polish on the workpiece. A rework polishing apparatus comprising a rework platen and a rework CMP head is configured to perform an auxiliary chemical-mechanical polish on the workpiece when the workpiece is positioned on the rework platen. A measurement apparatus measures one or more parameters of the workpiece, and a transport apparatus transports the workpiece between the first polishing apparatus, second polishing apparatus, rework polishing apparatus, and measurement apparatus. A controller determines a selective transport of the workpiece to the rework polishing apparatus by the transport apparatus only when the one or more parameters are unsatisfactory.

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