摘要:
A pattern inspection method in which an image can be detected without an image detection error caused by an adverse effect to be given by such factors as ions implanted in a wafer, pattern connection/non-connection, and pattern edge formation. A digital image of an object substrate is attained through microscopic observation thereof, the attained digital image is examined to detect defects, while masking a region pre-registered in terms of coordinates, or while masking a pattern meeting a pre-registered pattern, and an image of each of the defects thus detected is displayed. Further, each of the defects detected using the digital image attained through microscopic observation is checked to determine whether its feature meets a pre-registered feature or not. Defects having a feature that meets the pre-registered feature are so displayed that they can be turned on/off, or they are so displayed as to be distinguishable from the other defects.
摘要:
The present invention provides a scanning electron microscope (SEM) or optical inspection method and apparatus which correct differences in brightness between comparison images and thus which is capable of detecting a fine defect with a high degree of reliability without causing any false defect detection. According to the present invention, the brightness values of a pattern, which should be essentially the same, contained in two detected images to be compared are corrected in such a manner that, even if there may be a brightness difference in a portion free from defects, the brightness difference is reduced to such a degree so that it can be recognized as a normal portion. Also, a limit for the amount of correction is furnished in advance, and correction exceeding such limit value is not performed. Such correction prevents the difference in brightness that should be permitted as non-defective from being falsely recognized as a defect without overlooking great differences in brightness due to a defect.
摘要:
For purpose of providing a defect inspecting method and an apparatus thereof and a defect inspecting method on basis of electron beam image and an apparatus thereof, reducing possibility of bringing erroneous or false reports due to the test objection side and the inspecting apparatus side, being caused by discrepancies, such as the minute difference in pattern shapes, the difference in gradation values, the distortion or deformation of the patterns, the position shift, thereby enabling the detection of the defects or the defective candidates in more details, wherein an image which is small in distortion by controlling the electron beam scanning is detected and divided into a size so as to be able to neglect therefrom, and then position shift detection and defect decision are carried out in an accuracy less or finer than pixel for each division unit. In the defect decision, a desired tolerance can be set up depending upon changes in gradation values and the position shift.
摘要:
In order to enable the most suitable image processing condition to be set as one in which a dispersion in brightness between comparing images caused by object to be inspected and an image detecting system is not applied as a false information, in the present invention, there is obtained a noise characteristic of a secondary electron image caused by the image detecting system is calculated, the most suitable image processing parameters are determined depending on the object to be inspected on the basis of the characteristic, and its comparing processing is performed by using the noise characteristic and the image of the object to be inspected, thereby a dispersion in process for the object to be inspected is evaluated.
摘要:
A pattern inspecting method and apparatus for inspecting a defect or defective candidate of patterns on a sample includes picking up an image of a sample by shifting a sampling position on the sample, measuring geometric distortion in an image of a standard sample, beforehand, and defining a size for which the measured geometric distortion is neglectable, obtaining a first image of the sample and a second image to be compared with the first image, dividing the first image and the second stage into images of a division unit having a size not greater than the defined size, comparing a divided image of the first image with a divided image of the second image, and for calculating a difference in gradation values between both of the divided images. The defect or the defect candidate of the sample is extracted in accordance with the difference in the gradation values.
摘要:
A pattern inspection method and apparatus are disclosed, the method has the steps of generating a reference digital image signal to be compared with a detection digital image signal detected continuously from the desired band-shaped inspection area on an object to be inspected, determining zero or one or more candidate , matching positions between the detection digital image signal and the reference digital image signal for each block unit area sequentially cut out and calculating a mass of candidate matching positions over the entire band-shaped inspection area, determining an accurate matching position between the detection digital image signal and the reference digital image signal for each block unit area based on the continuity of the block unit areas from the calculated mass of candidate matching positions over the entire band-shaped inspection area, and determining a defect by matching the positions based on the determined accurate matching position for each block unit area and comparing the images.
摘要:
To realize a method for detecting variations in conditions (drift of the exposure and drift of the focus) in exposure equipment at a product wafer level in lithography process, the process is specified in such a way that calculation results of feature quantities such as electron beam images, line profiles, dimensions, etc. under various sets of the exposure and the focus are stored as a library, and an electron beam image of the product wafer is compared with these pieces of data in the library so that detection of drifts of the exposure and the focus a check of the results on the screen can easily be performed.
摘要:
Beforehand, the device characteristic patterns of each critical dimension SEM are measured, a sectional shape of an object to undergo dimension measurement is presumed by a model base library (MBL) matching system, dimension measurements are carried out by generating signal waveforms through SEM simulation by inputting the presumed sectional shapes and the device characteristic parameters, and differences in the dimension measurement results are registered as machine differences. In actual measurements, from the dimension measurement results in each critical dimension SEM, machine differences are corrected by subtracting the registered machine differences. Furthermore, changes in critical dimension SEM's over time are monitored by periodically measuring the above-mentioned device characteristic parameters and predicting the above-mentioned dimension measurement results. According to the present invention, actual measurements of machine differences, which require considerable time and effort, are unnecessary. In addition, the influence of changes in samples over time, which is problematic in monitoring changes in devices over time, can be eliminated.
摘要:
The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image. In this manner, a detection area of the detected signals can be expanded by using the plurality of detectors, and the image quality such as the contrast can be improved by synthesizing the detected signals by using the pattern direction or the edge strength calculated from the design data or the detected images.
摘要:
A method of inspecting patterns, including: adjusting a brightness of at least one of a first bright field image and a second bright field image detected from a specimen and directed to similar patterns on differing parts of the specimen, so as to more closely match a brightness; comparing the images which are adjusted in brightness to match with each other to detect dissimilarities indicative of a defect of the pattern, wherein in adjusting the brightness, the brightness between the first bright field image and the second bright field image is adjusted by performing a gradation conversion of at least one of the brightness between the first bright field image and the second bright field image; and wherein in the comparing, said defect of the pattern is detected by using information of a scattered diagram of brightness of the first bright field image and the second bright field image.