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公开(公告)号：US20100155254A1
公开(公告)日：2010-06-24
申请号：US12633219
申请日：2009-12-08
申请人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
发明人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
CPC分类号： C25D17/001 , C25D7/123
摘要： Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.
摘要翻译： 提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。 在电镀工艺之后从设备中取出半导体晶片时可能发生污染。 在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。 此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。 在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。
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公开(公告)号：US07686927B1
公开(公告)日：2010-03-30
申请号：US11510048
申请日：2006-08-25
申请人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind , Richard S. Hill
发明人： Jonathan D. Reid , Steven T. Mayer , Seshasayee Varadarajan , David C. Smith , Evan E. Patton , Dinesh S. Kalakkad , Gary Lind , Richard S. Hill
IPC分类号： C25D17/00
CPC分类号： H01L21/2885 , C25D17/001 , Y10S414/135 , Y10S414/136
摘要： The orientation of a wafer with respect to the surface of an electrolyte is controlled during an electroplating process. The wafer is delivered to an electrolyte bath along a trajectory normal to the surface of the electrolyte. Along this trajectory, the wafer is angled before entry into the electrolyte for angled immersion. A wafer can be plated in an angled orientation or not, depending on what is optimal for a given situation. Also, in some designs, the wafer's orientation can be adjusted actively during immersion or during electroplating, providing flexibility in various electroplating scenarios.
摘要翻译： 在电镀过程中控制晶片相对于电解质表面的取向。 将晶片沿着垂直于电解质表面的轨迹输送到电解质浴中。 沿着该轨迹，晶片在进入电解质之前是成角度的，用于倾斜的浸入。 根据给定情况下的最佳选择，晶圆可以以倾斜的方向进行电镀。 此外，在一些设计中，晶片的取向可以在浸入期间或在电镀期间被主动调节，从而在各种电镀场景中提供灵活性。
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公开(公告)号：US20100032304A1
公开(公告)日：2010-02-11
申请号：US12578310
申请日：2009-10-13
申请人： Steven T. Mayer , Jonathan D. Reid
发明人： Steven T. Mayer , Jonathan D. Reid
CPC分类号： C25D17/12 , C25D7/123 , C25D17/001 , C25D17/008 , H01L21/2885 , Y10S204/07
摘要： A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. This is accomplished by employing a “high resistance ionic current source,” which solves the terminal problem by placing a highly resistive membrane (e.g., a microporous ceramic or fretted glass element) in close proximity to the wafer, thereby swamping the system's resistance. The membrane thereby approximates a constant current source. By keeping the wafer close to the membrane surface, the ionic resistance from the top of the membrane to the surface is much less than the ionic path resistance to the wafer edge, substantially compensating for the sheet resistance in the thin metal film and directing additional current over the center and middle of the wafer.
摘要翻译： 将基本上均匀的金属层电镀在其上具有种子层的工件上。 这是通过使用“高电阻离子电流源”来实现的，其通过将高电阻膜（例如，微孔陶瓷或微波玻璃元件）放置在靠近晶片来解决端子问题，从而消除系统的电阻。 因此，膜近似于恒定电流源。 通过保持晶片靠近膜表面，从膜顶部到表面的离子电阻远小于对晶片边缘的离子路径电阻，基本上补偿薄金属膜中的薄层电阻并引导附加电流 在晶片的中心和中间。
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公开(公告)号：US07605082B1
公开(公告)日：2009-10-20
申请号：US11251353
申请日：2005-10-13
申请人： Jonathan D. Reid , Eric G. Webb , Edmund B. Minshall , Avishai Kepten , R. Marshall Stowell , Steven T. Mayer
发明人： Jonathan D. Reid , Eric G. Webb , Edmund B. Minshall , Avishai Kepten , R. Marshall Stowell , Steven T. Mayer
IPC分类号： H01L21/44
CPC分类号： H01L21/7684 , C23C18/1607 , C23C18/1882 , C25D5/02 , C25D7/123 , H01L21/02074 , H01L21/288 , H01L21/2885 , H01L21/3212 , H01L21/32134 , H01L21/76831 , H01L21/76849 , H01L21/76883 , Y10S414/135
摘要： Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.
摘要翻译： 在半导体器件中的导电线上形成覆盖层的方法的特征在于以下操作：（a）提供包括介电层的半导体衬底，所述电介质层具有（i）设置在其中的暴露的导电线（例如铜线）和（ ii）设置在其上的暴露的阻挡层; 和（b）在所述半导体衬底的至少暴露的导电线上沉积覆盖层材料。 在某些实施例中，该方法还可以包括移除设置在阻挡层和导电线上的导电层（例如，覆盖层）的至少一部分以暴露阻挡层。
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公开(公告)号：US06755946B1
公开(公告)日：2004-06-29
申请号：US10010954
申请日：2001-11-30
IPC分类号： C25D1706
CPC分类号： H01L21/2885 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/12
摘要： The present invention includes apparatus and methods for measuring impedance of a layer of deposited metal on a substrate and controlling deposition uniformity during electroplating. A first circuit delivers plating current to a metal layer on the substrate, and a second circuit, electrically isolated from the first, measures the impedance. Methods of the invention provide multi-point sheet resistance measurements before and during an electroplating process on a substrate. In a specific example, resistance is measured via a copper seed layer during electroplating.
摘要翻译： 本发明包括用于测量衬底上的沉积金属层的阻抗并控制电镀期间的沉积均匀性的装置和方法。 第一电路将电镀电流输送到衬底上的金属层，并且与第一电路电隔离的第二电路测量阻抗。 本发明的方法在基板上的电镀工艺之前和期间提供多点薄层电阻测量。 在具体实例中，电镀期间通过铜籽晶层测量电阻。
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公开(公告)号：US08415261B1
公开(公告)日：2013-04-09
申请号：US13270809
申请日：2011-10-11
申请人： Jonathan D. Reid , Eric G. Webb , Edmund B. Minshall , Avishai Kepten , R. Marshall Stowell , Steven T. Mayer
发明人： Jonathan D. Reid , Eric G. Webb , Edmund B. Minshall , Avishai Kepten , R. Marshall Stowell , Steven T. Mayer
CPC分类号： H01L21/7684 , C23C18/1607 , C23C18/1882 , C25D5/02 , C25D7/123 , H01L21/02074 , H01L21/288 , H01L21/2885 , H01L21/3212 , H01L21/32134 , H01L21/76831 , H01L21/76849 , H01L21/76883 , Y10S414/135
摘要： Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.
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公开(公告)号：US06800187B1
公开(公告)日：2004-10-05
申请号：US09927741
申请日：2001-08-10
IPC分类号： C25D500
CPC分类号： H01L21/2885 , C23C18/1619 , C23C18/1628 , C23C18/163 , C23C18/1669 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/004 , C25D17/008
摘要： An apparatus for engaging a work piece during plating facilitates electrolyte flow during a plating operation. The apparatus helps to control the plating solution fluid dynamics and electric field shape to keep the wafer's local plating environment uniform and bubble free. The apparatus holding the work piece in a manner that facilitates electrolyte circulation patterns in which the electrolyte flows from the center of the work piece plating surface, outward toward the edge of the edge of the work piece. The apparatus holds the work piece near the work piece edges and provides a flow path for electrolyte to flow outward away from the edges of the work piece plating surface. That flow path has a “snorkel” shape in which the outlet is higher than the inlet. In addition, the flow path may have a slot shape that spans much or all of the circumference of holding apparatus. It may be made from a material that resists deformation and corrosion such as certain ceramics.
摘要翻译： 在电镀期间接合工件的装置有助于在电镀操作期间的电解液流动。 该设备有助于控制电镀溶液流体动力学和电场形状，以保持晶片的局部电镀环境均匀且无气泡。 该装置以便于电解质循环图案的方式保持工件，其中电解质从工件电镀表面的中心向外朝向工件边缘的边缘流动。 该装置将工件保持在工件边缘附近，并且提供了电解液从工件电镀表面的边缘向外流动的流动路径。 该流路具有“浮潜”形状，其中出口高于入口。 此外，流路可以具有跨越保持装置的大部分或全部圆周的槽形状。 它可以由抵抗诸如某些陶瓷的变形和腐蚀的材料制成。
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28.发明授权Electroplating process for avoiding defects in metal features of integrated circuit devices 有权用于避免集成电路器件金属特征缺陷的电镀工艺公开(公告)号：US06793796B2
公开(公告)日：2004-09-21
申请号：US09796856
申请日：2001-02-28
申请人： Jonathan D. Reid , David Smith , Steven T. Mayer , Jon Henri , Sesha Varadarajan
发明人： Jonathan D. Reid , David Smith , Steven T. Mayer , Jon Henri , Sesha Varadarajan
IPC分类号： C25D518
CPC分类号： C25D3/38 , C25D5/18 , H01L21/2885 , H01L21/76877 , H05K3/423
摘要： Electroplating methods using an electroplating bath containing metal ions and a suppressor additive, an accelerator additive, and a leveler additive, together with controlling the current density applied to a substrate, avoid defects in plated films on substrates having features with a range of aspect ratios, while providing good filling and thickness distribution. The methods include, in succession, applying DC cathodic current densities optimized to form a conformal thin film on a seed layer, to provide bottom-up filling, preferentially on features having the largest aspect ratios, and to provide conformal plating of all features and adjacent field regions. Including a leveling agent in the electroplating bath produces films with better quality after subsequent processing.
摘要翻译： 使用含有金属离子的电镀浴和抑制剂添加剂，促进剂添加剂和矫光添加剂的电镀方法以及控制施加到基材上的电流密度，避免了具有一定范围的纵横比的特征的基板上的电镀膜的缺陷， 同时提供良好的填充和厚度分布。 这些方法依次包括施加直流阴极电流密度，其优化以在种子层上形成保形薄膜，从而优选地在具有最大纵横比的特征上提供自下而上的填充，并提供所有特征和相邻的特征的保形电镀 场地区域。 在电镀浴中包括流平剂在后续处理后产生更好质量的膜。
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公开(公告)号：US06527920B1
公开(公告)日：2003-03-04
申请号：US09706272
申请日：2000-11-03
IPC分类号： C25B1500
摘要： An electroplating apparatus prevents anode-mediated degradation of electrolyte additives by creating a mechanism for maintaining separate anolyte and catholyte and preventing mixing thereof within a plating chamber. The separation is accomplished by interposing a porous chemical transport barrier between the anode and cathode. The transport barrier limits the chemical transport (via diffusion and/or convection) of all species but allows migration of ionic species (and hence passage of current) during application of sufficiently large electric fields within electrolyte.
摘要翻译： 电镀装置通过产生用于维持单独的阳极电解液和阴极电解液并防止其在电镀室内的混合的机构来防止阳极介导的电解质添加剂的降解。 分离是通过在阳极和阴极之间插入多孔化学传输屏障来实现的。 运输屏障限制了所有物种的化学传输（通过扩散和/或对流），但是在电解质中施加足够大的电场期间允许离子物质的迁移（因此电流的流动）。
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公开(公告)号：US08500985B2
公开(公告)日：2013-08-06
申请号：US11827800
申请日：2007-07-13
CPC分类号： C25D5/022 , C25F5/00 , H05K3/07 , H05K3/108 , H05K2203/0108 , H05K2203/0392 , H05K2203/0537 , H05K2203/0713
摘要： Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.
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