MANUFACTURING METHOD FOR CATALYST CARRIER
    21.
    发明申请
    MANUFACTURING METHOD FOR CATALYST CARRIER 审中-公开
    催化载体的制造方法

    公开(公告)号:US20120088650A1

    公开(公告)日:2012-04-12

    申请号:US13247165

    申请日:2011-09-28

    IPC分类号: B01J37/08 B01J21/18 B82Y30/00

    摘要: After placing inside a reactor second container a substrate to which a CNT not yet carrying a catalyst is adhered under a sealed environment of supercritical carbon dioxide through which a Pt catalyst complex is dispersed, a temperature of the supercritical carbon dioxide is maintained below a decomposition temperature of the Pt catalyst complex, and a temperature of the CNT not yet carrying a catalyst is maintained at or above the decomposition temperature of the Pt catalyst complex by heating the substrate. Further, a pressure of the supercritical carbon dioxide is maintained at 7.5 MPa, which is slightly higher than a supercritical pressure (7.38 MPa) of carbon dioxide. The supercritical carbon dioxide is then caused to contact the CNT adhered to the substrate, and as a result, a Pt catalyst is carried on the CNT.

    摘要翻译: 在反应器第二容器中放置未分散有催化剂的CNT的超临界二氧化碳的密封环境下附着有载体催化剂的载体的基板,将超临界二氧化碳的温度维持在分解温度以下 的Pt催化剂配合物的温度,通过加热基板,将Pt催化剂配合物的温度保持在Pt催化剂配合物的分解温度以上。 此外,超临界二氧化碳的压力保持在7.5MPa,稍高于二氧化碳的超临界压力(7.38MPa)。 然后使超临界二氧化碳与附着在基板上的CNT接触,结果,在CNT上承载Pt催化剂。

    SPEAKER DEVICE, AUDIO CONTROL DEVICE, WALL ATTACHED WITH SPEAKER DEVICE
    22.
    发明申请
    SPEAKER DEVICE, AUDIO CONTROL DEVICE, WALL ATTACHED WITH SPEAKER DEVICE 审中-公开
    扬声器设备,音频控制设备,与扬声器设备连接

    公开(公告)号:US20120070020A1

    公开(公告)日:2012-03-22

    申请号:US13321858

    申请日:2011-03-24

    申请人: Hiroyuki Kano

    发明人: Hiroyuki Kano

    IPC分类号: H04R1/02 H04R3/00

    摘要: A speaker (10) includes: a speaker unit (20); a passive radiator (50x) in front of the speaker unit (20); and a cabinet (30) storing the speaker unit (20) to cover a rear space behind the speaker unit (20) to seal a space (30x) between the speaker unit (20) and the passive radiator (50x). An effective piston area (50L) of the passive radiator (50x) is larger than an effective piston area (20L) of the speaker unit (20).

    摘要翻译: 扬声器(10)包括:扬声器单元(20); 扬声器单元(20)前面的无源辐射器(50x); 以及存储扬声器单元(20)以覆盖扬声器单元(20)后面的后部空间以密封扬声器单元(20)和无源辐射体(50x)之间的空间(30x)的机壳(30)。 无源辐射器(50x)的有效活塞面积(50L)大于扬声器单元(20)的有效活塞面积(20L)。

    PLASMA GENERATOR
    23.
    发明申请
    PLASMA GENERATOR 审中-公开
    等离子发生器

    公开(公告)号:US20110042008A1

    公开(公告)日:2011-02-24

    申请号:US12735807

    申请日:2009-02-20

    IPC分类号: C23F1/08 H05H1/48

    摘要: To provide a plasma generator having a plasma-generating zone of an increased volume.A plasma generator 100 has a casing 10 made of a sintered ceramic produced from alumina (Al2O3) as a raw material. The casing 10 has a slit-like gas intake section 12, and a gas discharge section 20 in which a plurality of holes are disposed in a line. From the gas intake section 12 to the top of a plasma-generating zone P, the slits have a width of 1 mm. There is provided a second gas discharge section 22 including holes 24 which have a diameter of 0.5 mm and a length of 16 mm and which are arranged in a line along the longitudinal axis of the plasma-generating zone P. The plasma-generating zone P has a cross-section which is a rectangle having a side of 2 to 5 mm. Electrodes 2a, 2b are provided with hollow portions on the surfaces thereof facing each other. A power sources supplies about 9 kV, which is obtained by boosting 100 V (60 Hz) and is applied to the electrodes 2a, 2b with a current of 20 mA. When argon gas is supplied through a gas intake section 12, a plasma was generated, even when the electrodes 2a, 2b were separated at a maximum spacing of 4 cm. No electric discharge was generated between the tips of the holes 24 and a treatment object.

    摘要翻译: 提供具有增加体积的等离子体产生区域的等离子体发生器。 等离子体发生器100具有由作为原料的氧化铝(Al 2 O 3)制成的烧结陶瓷制成的壳体10。 壳体10具有狭缝状的气体吸入部12和排列在多个孔中的气体排出部20。 从气体吸入部12到等离子体产生区P的顶部,狭缝的宽度为1mm。 设置有第二气体排出部22,该第二气体排出部22具有直径为0.5mm,长度为16mm的孔24,沿着等离子体产生区P的纵轴线排列。等离子体产生区P 具有侧面为2〜5mm的矩形的截面。 电极2a,2b在其彼此面对的表面上设置有中空部分。 电源提供约9kV,其通过升压100V(60Hz)而获得,并以20mA的电流施加到电极2a,2b。 当通过气体进入部分12供应氩气时,即使电极2a,2b以4cm的最大间距分离,也产生等离子体。 在孔24的尖端和处理对象物之间不产生放电。

    Spectroscopy Method and Spectroscope
    24.
    发明申请
    Spectroscopy Method and Spectroscope 失效
    光谱法和光谱仪

    公开(公告)号:US20090122317A1

    公开(公告)日:2009-05-14

    申请号:US11991542

    申请日:2006-09-06

    IPC分类号: G01N21/31 G02B6/26

    摘要: To achieve an apparatus capable of measuring a light absorption coefficient f a sample with high sensitivity. A ring down spectroscope uses a wavelength-variable femtosecond soliton pulse light source 1. Pulse light is input to a loop optical fiber 6 through a first light waveguide 4 and a wavelength selective switch 5. Ring down pulse light is input to a homodyne detector through the wavelength selective switch 5. On the other hand, pulse light propagating in the first light waveguide 4 is split and input to light waveguides constituting a second light waveguide 20 through an optical directional coupler 8 and a first optical switching element 12. The pulse light propagating in the second light waveguide 20 is input to the homodyne detector as reference light and used for synchronous detection. The plural light waveguides constituting the second light waveguide 20 differ in optical length in accordance with the length of the optical fiber 6, and can slightly change the optical length.

    摘要翻译: 实现能够以高灵敏度测量样品的光吸收系数f的装置。 环形光谱仪使用波长可变飞秒激光脉冲光源1.脉冲光通过第一光波导4和波长选择开关5输入到环形光纤6中。环形脉冲光通过 波长选择开关5.另一方面,在第一光波导4中传播的脉冲光通过光学定向耦合器8和第一光开关元件12被分离并输入到构成第二光波导20的光波导上。脉冲光 在第二光波导20中传播的信号被输入到零差检测器作为参考光,并用于同步检测。 构成第二光波导路20的多个光波导根据光纤6的长度的光学长度不同,并且可以稍微改变光学长度。

    Fuel Cell Structure and Method of Manufacturing Same
    26.
    发明申请
    Fuel Cell Structure and Method of Manufacturing Same 有权
    燃料电池结构及制造方法相同

    公开(公告)号:US20080187814A1

    公开(公告)日:2008-08-07

    申请号:US11884234

    申请日:2006-02-14

    IPC分类号: H01M4/96 H01M4/88

    摘要: A fuel cell structure comprises a diffusion layer and/or a catalyst layer which are made of a carbonaceous porous material having a nano-size structure, such as carbon nanowall (CNW). A method of manufacturing the structure is also disclosed. The structure and method simplify the process of manufacturing a fuel cell electrode comprised of an electrode catalyst layer and a gas diffusion layer. The electrical conductivity of the catalyst layer is increased and the diffusion efficiency of the diffusion layer is improved, whereby the electricity generation efficiency of the fuel cell can be improved.

    摘要翻译: 燃料电池结构包括由具有纳米尺寸结构的碳质多孔材料(例如碳纳米壁(CNW))制成的扩散层和/或催化剂层。 还公开了一种制造该结构的方法。 该结构和方法简化了制造由电极催化剂层和气体扩散层组成的燃料电池电极的工艺。 催化剂层的导电性提高,扩散层的扩散效率提高,能够提高燃料电池的发电效率。

    Light-receiving device with quantum-wave interference layers
    27.
    发明授权
    Light-receiving device with quantum-wave interference layers 失效
    具有量子波干涉层的光接收装置

    公开(公告)号:US06818916B2

    公开(公告)日:2004-11-16

    申请号:US09461756

    申请日:1999-12-16

    申请人: Hiroyuki Kano

    发明人: Hiroyuki Kano

    IPC分类号: H01L3100

    摘要: A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an even number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. As a result, when electrons are excited in the carrier accumulation layers C1 to C3, electrons are propagated through the quantum-wave interference layer from the n-layer to the p-layer as a wave, and electric current flows rapidly.

    摘要翻译: 一种pin结结构的光接收装置,由具有多个周期的一对第一层W和第二层B以及载流子积累层C1至C3的量子波干涉层Q1至Q4构成。 第二层B具有比第一层W更宽的带隙。第一层W和第二层B的每个厚度通过将第一层中的每一个中的载流子的量子波的波长的偶数四乘 W和第二层B存在于第二层B的最低能级附近的级别。在第一层W和第二层B之间的每个界面处形成用于急剧变化的能带的增量层,并且具有 厚度基本上比第一层W和第二层B薄。结果,当电子在载流子堆积层C1至C3中被激发时,电子通过量子波干涉层从n层传播到p- 层作为波,电流迅速流动。

    Light emitting semiconductor device with partial reflection quantum-wave interference layers
    28.
    发明授权
    Light emitting semiconductor device with partial reflection quantum-wave interference layers 失效
    具有部分反射量子波干涉层的发光半导体器件

    公开(公告)号:US06476412B1

    公开(公告)日:2002-11-05

    申请号:US09695312

    申请日:2000-10-25

    申请人: Hiroyuki Kano

    发明人: Hiroyuki Kano

    IPC分类号: H01L3300

    摘要: A semiconductor device is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. The second layer B has wider band gap than the first layer W. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing around the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. The quantum-wave interference layer functions as a reflecting layer of carriers for higher reflectivity.

    摘要翻译: 半导体器件由具有一对第一层W和第二层B的多个周期的量子波干涉层构成。第二层B具有比第一层W更宽的带隙。第一层W的厚度 并且第二层B通过在第二层B的最低能级周围存在的第一层W和第二层B中的每一个中乘以奇数倍的载流子量子波的四分之一来确定。三角形层 在第一层W和第二层B之间的每个界面处形成具有急剧变化的能带的厚度,其厚度基本上比第一层W和第二层B薄。量子波干涉层用作反射 用于更高反射率的载体层。

    Variable capacity device with quantum-wave interference layers
    29.
    发明授权
    Variable capacity device with quantum-wave interference layers 失效
    具有量子波干涉层的可变容量器件

    公开(公告)号:US06331716B1

    公开(公告)日:2001-12-18

    申请号:US09245299

    申请日:1999-02-05

    申请人: Hiroyuki Kano

    发明人: Hiroyuki Kano

    IPC分类号: H01L2906

    摘要: A variable capacity device having an nin, pip, nn−p, np−p, or nip junction whose middle layer is constituted by a quantum-wave interference layer with plural periods of a first layer W and a second layer B as a unit. The second layer B has a wider band gap than the first layer W. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of a wavelength of a quantum-wave of carriers in each of the first layer W and the second layer B existing around the lowest energy level of the second layer B. A &dgr; layer, for changing energy band suddenly, is formed at interfaces between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. Plurality of quantum-wave interference units are formed sandwiching carrier accumulation layers in series. Then a voltage-variation rate of capacity of the variable capacity device is improved.

    摘要翻译: 具有nin,pip,nn-p,np-p或nip结的可变容量器件,其中间层由具有多个第一层W和第二层B的单位的量子波干涉层构成。 第二层B具有比第一层W更宽的带隙。第一层W和第二层B的厚度通过将每个载流子的量子波的波长的四分之一乘以 第一层W和第二层B围绕第二层B的最低能级存在。用于在第一层W和第二层B之间的界面处形成用于突然改变能带的增量层,其厚度基本上 比第一层W和第二层B薄。多个量子波干涉单元被形成为串联的载流子堆积层。 然后提高可变容量装置的电容变化率。

    Diodes with quantum-wave interference layers
    30.
    发明授权
    Diodes with quantum-wave interference layers 失效
    具有量子波干涉层的二极管

    公开(公告)号:US06188082B1

    公开(公告)日:2001-02-13

    申请号:US09057549

    申请日:1998-04-09

    申请人: Hiroyuki Kano

    发明人: Hiroyuki Kano

    IPC分类号: H01L2906

    摘要: A diode is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B, having at least one quantum-wave interference layer in a p-layer or an n-layer. The second layer B has wider band gap than the first layer W. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of quantum-wave wavelength of carriers in each of the first layer W and the second layer B existing around the lowest energy level of the second layer B. A &dgr; layer, for sharply varying an energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. The quantum-wave interference layer functions as a reflecting layer of carriers for higher reflectivity.

    摘要翻译: 二极管由具有在p层或n层中具有至少一个量子波干涉层的多个第一层W和第二层B的多个周期的量子波干涉层构成。 第二层B具有比第一层W更宽的带隙。第一层W和第二层B的厚度通过将第一层W中的每一个中的载流子的量子波长的四分之一乘以奇数 并且第二层B围绕第二层B的最低能级存在。用于急剧改变能带的Δ层形成在第一层W和第二层B之间的每个界面处,并且具有基本上更薄的厚度 与第一层W和第二层B相比。量子波干涉层用作较高反射率的载流子的反射层。