摘要:
After placing inside a reactor second container a substrate to which a CNT not yet carrying a catalyst is adhered under a sealed environment of supercritical carbon dioxide through which a Pt catalyst complex is dispersed, a temperature of the supercritical carbon dioxide is maintained below a decomposition temperature of the Pt catalyst complex, and a temperature of the CNT not yet carrying a catalyst is maintained at or above the decomposition temperature of the Pt catalyst complex by heating the substrate. Further, a pressure of the supercritical carbon dioxide is maintained at 7.5 MPa, which is slightly higher than a supercritical pressure (7.38 MPa) of carbon dioxide. The supercritical carbon dioxide is then caused to contact the CNT adhered to the substrate, and as a result, a Pt catalyst is carried on the CNT.
摘要:
A speaker (10) includes: a speaker unit (20); a passive radiator (50x) in front of the speaker unit (20); and a cabinet (30) storing the speaker unit (20) to cover a rear space behind the speaker unit (20) to seal a space (30x) between the speaker unit (20) and the passive radiator (50x). An effective piston area (50L) of the passive radiator (50x) is larger than an effective piston area (20L) of the speaker unit (20).
摘要:
To provide a plasma generator having a plasma-generating zone of an increased volume.A plasma generator 100 has a casing 10 made of a sintered ceramic produced from alumina (Al2O3) as a raw material. The casing 10 has a slit-like gas intake section 12, and a gas discharge section 20 in which a plurality of holes are disposed in a line. From the gas intake section 12 to the top of a plasma-generating zone P, the slits have a width of 1 mm. There is provided a second gas discharge section 22 including holes 24 which have a diameter of 0.5 mm and a length of 16 mm and which are arranged in a line along the longitudinal axis of the plasma-generating zone P. The plasma-generating zone P has a cross-section which is a rectangle having a side of 2 to 5 mm. Electrodes 2a, 2b are provided with hollow portions on the surfaces thereof facing each other. A power sources supplies about 9 kV, which is obtained by boosting 100 V (60 Hz) and is applied to the electrodes 2a, 2b with a current of 20 mA. When argon gas is supplied through a gas intake section 12, a plasma was generated, even when the electrodes 2a, 2b were separated at a maximum spacing of 4 cm. No electric discharge was generated between the tips of the holes 24 and a treatment object.
摘要:
To achieve an apparatus capable of measuring a light absorption coefficient f a sample with high sensitivity. A ring down spectroscope uses a wavelength-variable femtosecond soliton pulse light source 1. Pulse light is input to a loop optical fiber 6 through a first light waveguide 4 and a wavelength selective switch 5. Ring down pulse light is input to a homodyne detector through the wavelength selective switch 5. On the other hand, pulse light propagating in the first light waveguide 4 is split and input to light waveguides constituting a second light waveguide 20 through an optical directional coupler 8 and a first optical switching element 12. The pulse light propagating in the second light waveguide 20 is input to the homodyne detector as reference light and used for synchronous detection. The plural light waveguides constituting the second light waveguide 20 differ in optical length in accordance with the length of the optical fiber 6, and can slightly change the optical length.
摘要:
A method for manufacturing a catalyst layer for a fuel cell support for a catalyst layer comprises the steps of vapor-growing a carbonaceous porous material having a nano-size structure, such as carbon nanowalls (CNWs), and supporting and dispersing a catalyst component and/or an electrolyte component on the support for a catalyst layer. The method simplifies the process for manufacturing an electrode layer for fuel cells and improves the dispersibility of the catalyst component and the electrolyte, whereby the generation efficiency of a fuel cell can be improved.
摘要:
A fuel cell structure comprises a diffusion layer and/or a catalyst layer which are made of a carbonaceous porous material having a nano-size structure, such as carbon nanowall (CNW). A method of manufacturing the structure is also disclosed. The structure and method simplify the process of manufacturing a fuel cell electrode comprised of an electrode catalyst layer and a gas diffusion layer. The electrical conductivity of the catalyst layer is increased and the diffusion efficiency of the diffusion layer is improved, whereby the electricity generation efficiency of the fuel cell can be improved.
摘要:
A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q1 to Q4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C1 to C3. The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an even number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. As a result, when electrons are excited in the carrier accumulation layers C1 to C3, electrons are propagated through the quantum-wave interference layer from the n-layer to the p-layer as a wave, and electric current flows rapidly.
摘要:
A semiconductor device is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. The second layer B has wider band gap than the first layer W. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing around the lowest energy level of the second layer B. A &dgr; layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. The quantum-wave interference layer functions as a reflecting layer of carriers for higher reflectivity.
摘要:
A variable capacity device having an nin, pip, nn−p, np−p, or nip junction whose middle layer is constituted by a quantum-wave interference layer with plural periods of a first layer W and a second layer B as a unit. The second layer B has a wider band gap than the first layer W. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of a wavelength of a quantum-wave of carriers in each of the first layer W and the second layer B existing around the lowest energy level of the second layer B. A &dgr; layer, for changing energy band suddenly, is formed at interfaces between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. Plurality of quantum-wave interference units are formed sandwiching carrier accumulation layers in series. Then a voltage-variation rate of capacity of the variable capacity device is improved.
摘要:
A diode is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B, having at least one quantum-wave interference layer in a p-layer or an n-layer. The second layer B has wider band gap than the first layer W. Each thickness of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of quantum-wave wavelength of carriers in each of the first layer W and the second layer B existing around the lowest energy level of the second layer B. A &dgr; layer, for sharply varying an energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. The quantum-wave interference layer functions as a reflecting layer of carriers for higher reflectivity.