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58 条记录 (耗时 0.05 秒)

    Precision dielectric etch using hexafluorobutadiene
    21.
    发明授权
    Precision dielectric etch using hexafluorobutadiene 失效
    使用六氟丁二烯的精密电介质蚀刻

    公开(公告)号：US06800213B2

    公开(公告)日：2004-10-05

    申请号：US10165249

    申请日：2002-06-07

    申请人： Ji Ding ,  Hidehiro Kojiri ,  Yoshio Ishikawa ,  Keiji Horioka ,  Ruiping Wang ,  Robert W. Wu ,  Hoiman (Raymond) Hung

    发明人： Ji Ding ,  Hidehiro Kojiri ,  Yoshio Ishikawa ,  Keiji Horioka ,  Ruiping Wang ,  Robert W. Wu ,  Hoiman (Raymond) Hung

    IPC分类号： H01L213065

    CPC分类号： H01L21/31116

    摘要： An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.

    摘要翻译： 具有F / C比小于2，优选C4F6，含氧气体如O 2或CO，重质碳氟化合物或氢氟碳化合物的稀无机氟碳氟化合物和诸如Ar或Xe的稀有稀释气体的氧化物蚀刻配方 。 选择前三种气体的量，使得比值（FH）/（CO）至少为1.5且不大于2.或者，气体混合物可以包括重碳氟化合物，四氟化碳和稀释剂，其比例 的前两个选择的比例F / C在1.5和2之间。

    Etchant for silicon oxide and method
    22.
    发明授权
    Etchant for silicon oxide and method 失效
    氧化硅蚀刻剂和方法

    公开(公告)号：US06461533B1

    公开(公告)日：2002-10-08

    申请号：US09090476

    申请日：1998-06-04

    申请人： Yasuhiro Horiike ,  Yoshio Ishikawa ,  Keiji Horioka

    发明人： Yasuhiro Horiike ,  Yoshio Ishikawa ,  Keiji Horioka

    IPC分类号： C09K1300

    CPC分类号： H01L21/31116 ,  C09K13/08

    摘要： A method of etching silicon oxide with high selectivity to a photoresist mask and to a silicon-containing substrate comprising exposing the silicon oxide to a plasma of a precursor etch gas of a fluorocarbon and an organic silane containing at least one organic group. When at least about 10% by weight of the silane is present in the etch gas, the selectivity between the silicon oxide and the photoresist mask layer, and between the silicon oxide and the silicon-containing substrate, increases markedly. High aspect ratio, submicron size openings can be etched.

    摘要翻译： 一种对光致抗蚀剂掩模和含硅衬底具有高选择性的氧化硅蚀刻的方法，包括将氧化硅暴露于含有至少一个有机基团的碳氟化合物的前体蚀刻气体的等离子体和含有有机硅烷的等离子体。 当蚀刻气体中存在至少约10重量％的硅烷时，氧化硅和光致抗蚀剂掩模层之间以及氧化硅和含硅衬底之间的选择性显着增加。 高长宽比，亚微米尺寸的开口可被蚀刻。

    Focused ion beam deposition using TMCTS
    23.
    发明授权
    Focused ion beam deposition using TMCTS 失效
    使用TMCTS聚焦离子束沉积

    公开(公告)号：US5639699A

    公开(公告)日：1997-06-17

    申请号：US420153

    申请日：1995-04-11

    申请人： Hiroko Nakamura ,  Haruki Komano ,  Kazuyoshi Sugihara ,  Keiji Horioka ,  Mitsuyo Kariya ,  Soichi Inoue ,  Ichiro Mori ,  Katsuya Okumura ,  Tadahiro Takigawa ,  Toru Watanabe ,  Motosuke Miyoshi ,  Yuichiro Yamazaki ,  Haruo Okano

    发明人： Hiroko Nakamura ,  Haruki Komano ,  Kazuyoshi Sugihara ,  Keiji Horioka ,  Mitsuyo Kariya ,  Soichi Inoue ,  Ichiro Mori ,  Katsuya Okumura ,  Tadahiro Takigawa ,  Toru Watanabe ,  Motosuke Miyoshi ,  Yuichiro Yamazaki ,  Haruo Okano

    IPC分类号： B05D5/00 ,  C23C16/04 ,  G03F1/00 ,  G03F1/26 ,  G03F1/74 ,  H01L21/316

    CPC分类号： G03F1/74 ,  B05D5/005 ,  C23C16/047 ,  G03F1/26

    摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.

    摘要翻译： 根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜 在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜 使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。 根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凹陷缺陷的方法，该方法具有以下步骤：将材料埋在凹陷缺陷中并形成从基板表面突出的突出部分 使用由与基板不同的材料构成的平坦化膜覆盖包括突出部分的区域，以平坦化该区域的上表面，使用带电粒子束同时移除突出部分周围的突出部分和平坦化膜 并且执行在执行同时去除的步骤中留下的平坦化膜的去除。

    Method for manufacturing exposure mask and the exposure mask
    24.
    发明授权
    Method for manufacturing exposure mask and the exposure mask 失效
    曝光掩模和曝光掩模的制造方法

    公开(公告)号：US5543252A

    公开(公告)日：1996-08-06

    申请号：US228504

    申请日：1994-04-15

    申请人： Tsuyoshi Shibata ,  Koji Hashimoto ,  Katsuhiko Heida ,  Kenji Kawano ,  Shinichi Ito ,  Keiji Horioka

    发明人： Tsuyoshi Shibata ,  Koji Hashimoto ,  Katsuhiko Heida ,  Kenji Kawano ,  Shinichi Ito ,  Keiji Horioka

    IPC分类号： G03F1/29 ,  G03F1/30 ,  G03F1/34 ,  G03F9/00

    CPC分类号： G03F1/30 ,  G03F1/29 ,  G03F1/34

    摘要： A method for manufacturing an exposure mask provided with a substrate for transmitting an exposure light and with phase shifters arranged at prescribed intervals on the substrate for shifting the phase of the exposure light transmitted through the substrate by a half wavelength as compared with the phase of the exposure light transmitted through both the substrate and an opening between the phase shifters consists of the steps of preparing a solution containing a phase shifter material, arranging resist layers at the prescribed intervals on the substrate, immersing the substrate with the resist layers in the solution, forming the phase shifters on the substrate between the resist layers by a prescribed thickness by depositing the material of the phase shifter from the solution, and removing the resist layers from the substrate to form the openings.

    摘要翻译： 一种制造曝光掩模的方法，该曝光掩模具有用于透射曝光光的基板和在基板上以规定间隔布置的移相器，用于将透过该基板的曝光光的相位与第二波长的相位相比移动一半波长 透过基板和移相器之间的开口的曝光光由以下步骤组成：制备含有移相材料的溶液，在基板上以规定的间隔配置抗蚀剂层，将基板与抗蚀剂层浸入溶液中， 通过从溶液中沉积移相器的材料，在基板上形成位于抗蚀剂层之间的相移规定厚度的移相器，以及从基板去除抗蚀剂层以形成开口。

    Plasma etching apparatus
    27.
    发明授权
    Plasma etching apparatus 失效
    等离子刻蚀装置

    公开(公告)号：US5320704A

    公开(公告)日：1994-06-14

    申请号：US798970

    申请日：1991-11-27

    申请人： Keiji Horioka ,  Yukimasa Yoshida ,  Shiro Koyama

    发明人： Keiji Horioka ,  Yukimasa Yoshida ,  Shiro Koyama

    IPC分类号： H01L21/302 ,  H01J37/32 ,  H01J37/34 ,  H01L21/3065 ,  H01L21/00

    CPC分类号： H01J37/32935 ,  H01J37/32963 ,  H01J37/3405 ,  H01J37/3455

    摘要： A magnetron plasma etching apparatus comprises a chamber and a mount for supporting a substrate. A high-potential electrode connected to an RF power source is connected to the mount, and a low-potential electrode which is grounded is connected to the chamber. A rotary magnet is provided above the chamber, thereby generating a rotary magnetic field intersecting at right angles an electric field generated by both electrodes. An end-point detecting member for detecting an end-point of etching of the substrate is provided at the side of the chamber. The end-point detecting member collects mainly the light at a region near the rotation center of the magnetic field. That light component of a spectrum, which varies greatly with the progress of the etching, is extracted from the collected light, and the intensity of the light of this spectrum is converted to a first electric signal. The intensity of the collected light is converted to a second electric signal. The end-point detecting means calculates a ratio of the first and second electric signals, and the end-point of the etching is detected on the basis of the ratio.

    摘要翻译： 磁控管等离子体蚀刻装置包括用于支撑衬底的腔室和支架。 连接到RF电源的高电位电极连接到安装座，并且接地的低电位电极连接到腔室。 旋转磁体设置在腔室上方，从而产生与两个电极产生的电场成直角相交的旋转磁场。 在室的侧面设置有用于检测基板的蚀刻终点的端点检测部件。 端点检测部件主要在靠近磁场的旋转中心的区域收集光。 从收集的光中提取与蚀刻的进展有很大差异的光谱的光分量，并将该光谱的光的强度转换为第一电信号。 所收集的光的强度被转换成第二电信号。 端点检测装置计算第一和第二电信号的比率，并且基于该比率检测蚀刻的终点。

    Frequency tripling using spacer mask having interposed regions
    29.
    发明授权
    Frequency tripling using spacer mask having interposed regions 失效
    使用具有插入区域的间隔掩模进行三倍频

    公开(公告)号：US07846849B2

    公开(公告)日：2010-12-07

    申请号：US11875205

    申请日：2007-10-19

    申请人： Christopher D. Bencher ,  Keiji Horioka

    发明人： Christopher D. Bencher ,  Keiji Horioka

    IPC分类号： H01L21/033 ,  H01L21/02

    CPC分类号： H01L21/0332 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  Y10S438/947 ,  Y10S438/95

    摘要： A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask comprised of a series of lines is first provided. A spacer mask having spacer lines adjacent to the sidewalls of the series of lines of the sacrificial mask is then formed. The spacer mask also has interposed lines between the spacer lines. Finally, the sacrificial mask is removed to provide only the spacer mask. The spacer mask having interposed lines triples the frequency of the series of lines of the sacrificial mask.

    摘要翻译： 对半导体掩模的制造方法进行说明。 首先提供具有由一系列线组成的牺牲掩模的半导体叠层。 然后形成具有与牺牲掩模的一系列线的侧壁相邻的间隔线的间隔物掩模。 间隔物掩模还在间隔物线之间插入线。 最后，去除牺牲掩模以仅提供间隔物掩模。 具有插入的线的间隔掩模将牺牲掩模的一系列线的频率提高三倍。