公开(公告)号：US20080096388A1

公开(公告)日：2008-04-24

申请号：US11551390

申请日：2006-10-20

申请人： David Matsumoto ,  Vidyut Gopal

发明人： David Matsumoto ,  Vidyut Gopal

IPC分类号： H01L21/302

CPC分类号： H01L21/31053 ,  C09G1/02 ,  H01L21/76819

摘要： A method of planarizing a semiconductor device is provided. The semiconductor device includes a substrate, first and second components provided on the surface of the substrate, and a first material provided between and above the first and second components. The first component has a height greater than a height of the second component. The method includes performing a first polishing step on the semiconductor device to remove the first material above a top surface of the first component, to remove the first material above a top surface of the second component, and to level the top surface of the first component. The method also includes performing a second polishing step on the semiconductor device to planarize the top surfaces of the first and second components.

摘要翻译： 提供了一种平面化半导体器件的方法。 半导体器件包括衬底，设置在衬底的表面上的第一和第二组件以及设置在第一和第二组件之间和之上的第一材料。 第一部件的高度大于第二部件的高度。 该方法包括在半导体器件上执行第一抛光步骤以去除第一部件的顶表面上方的第一材料，以去除第二部件的顶表面上方的第一材料，并且使第一部件的顶表面平整 。 该方法还包括在半导体器件上执行第二抛光步骤以平坦化第一和第二部件的顶表面。

公开(公告)号：US20060223339A1

公开(公告)日：2006-10-05

申请号：US11421283

申请日：2006-05-31

申请人： Craig Metzner ,  Shreyas Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram Athreya

发明人： Craig Metzner ,  Shreyas Kher ,  Vidyut Gopal ,  Shixue Han ,  Shankarram Athreya

IPC分类号： H01L21/31

CPC分类号： H01L21/02181 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/31604 ,  H01L21/318

摘要： Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone one or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.

摘要翻译： 通过依次将金属有机化合物与臭氧一起或在远离等离子体室中形成的氧自由基或氮自由基反应而形成金属化合物如金属氧化物或金属氮化物的方法。 当通过原子层沉积沉积至少10秒的循环时间时，金属化合物具有惊人的和显着改善的均匀性。 当金属有机化合物在不存在溶剂或过量配体的过程条件下蒸发时，金属化合物也不含可检测的碳。

公开(公告)号：US20160172588A1

公开(公告)日：2016-06-16

申请号：US14317255

申请日：2014-06-27

申请人： Jinhong Tong ,  Randall Higuchi ,  Imran Hashim ,  Vidyut Gopal

发明人： Jinhong Tong ,  Randall Higuchi ,  Imran Hashim ,  Vidyut Gopal

IPC分类号： H01L45/00

CPC分类号： H01L45/1608 ,  H01L45/04 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1633 ,  H01L45/1658

摘要： Methods for producing RRAM resistive switching elements having reduced forming voltage include doping to create oxygen deficiencies in the dielectric film. Oxygen deficiencies in a dielectric film promote formation of conductive pathways.

摘要翻译： 制造具有降低的成形电压的RRAM电阻式开关元件的方法包括掺杂以在电介质膜中产生氧缺陷。 电介质膜中的氧缺乏促进导电通路的形成。

公开(公告)号：US08741698B2

公开(公告)日：2014-06-03

申请号：US13306096

申请日：2011-11-29

申请人： Jinhong Tong ,  Vidyut Gopal ,  Imran Hashim ,  Randall Higuchi ,  Albert Lee

发明人： Jinhong Tong ,  Vidyut Gopal ,  Imran Hashim ,  Randall Higuchi ,  Albert Lee

IPC分类号： H01L21/332

CPC分类号： H01L45/08 ,  H01L27/2463 ,  H01L45/146 ,  H01L45/1616

摘要： Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium oxide for use in a variety of electronic devices. Forming the dielectric layer includes depositing zirconium oxide using atomic layer deposition. A method of atomic layer deposition to produce a metal-rich metal oxide comprises the steps of providing a silicon substrate in a reaction chamber, pulsing a zirconium precursor for a predetermined time to deposit a first layer, and oxidizing the first layer with water vapor to produce the metal-rich metal oxide. The metal-rich metal oxide has superior properties for non-volatile resistive-switching memories.

摘要翻译： 原子层沉积（ALD）可用于形成用于各种电子器件的氧化锆电介质层。 形成介电层包括使用原子层沉积沉积氧化锆。 原子层沉积法生产富金属的金属氧化物的方法包括以下步骤：在反应室中提供硅衬底，将锆前体脉冲预定的时间以沉积第一层，并用水蒸气氧化第一层 产生富金属的金属氧化物。 富金属的金属氧化物具有优异的非易失性电阻式开关存储器的性能。

公开(公告)号：US08569104B2

公开(公告)日：2013-10-29

申请号：US13367927

申请日：2012-02-07

申请人： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi ,  Hong Sheng Yang

发明人： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi ,  Hong Sheng Yang

IPC分类号： H01L29/02

CPC分类号： H01L45/08 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641

摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.

公开(公告)号：US08481357B2

公开(公告)日：2013-07-09

申请号：US12766765

申请日：2010-04-23

申请人： Ananda H. Kumar ,  Tirunelveli S. Ravi ,  Vidyut Gopal

发明人： Ananda H. Kumar ,  Tirunelveli S. Ravi ,  Vidyut Gopal

IPC分类号： H01L21/00

CPC分类号： H01L31/02167 ,  C03C3/091 ,  C03C3/097 ,  C03C8/08 ,  C03C8/14 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/048 ,  H01L31/0682 ,  H01L31/072 ,  H01L31/0725 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for fabricating a photovoltaic (PV) cell panel wherein all PV cells are formed simultaneously on a two-dimensional array of monocrystalline silicon mother wafers affixed to a susceptor is disclosed. Porous silicon separation layers are anodized in the surfaces of the mother wafers. The porous film is then smoothed to form a suitable surface for epitaxial film growth. An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures. A glass/ceramic handling layer is then formed on the PV cell structures. The PV cell structures with handling layers are then exfoliated from the mother wafer. The array of mother wafers may be reused multiple times, thereby reducing materials costs for the completed solar panels. The glass/ceramic handling layers provide structural integrity to the thin epitaxial solar cells during the separation process and subsequent handling.

摘要翻译： 公开了一种制造光伏（PV）电池板的方法，其中所有PV电池同时形成在固定在基座上的单晶硅母晶片的二维阵列上。 在母晶片的表面上阳极氧化多孔硅分离层。 然后使多孔膜平滑以形成用于外延膜生长的合适表面。 使用外延反应器来生长形成PV电池结构的n型和p型膜。 然后在PV电池结构上形成玻璃/陶瓷处理层。 然后将具有处理层的PV电池结构从母晶片剥离。 母晶片的阵列可以重复使用多次，从而减少完成的太阳能电池板的材料成本。 玻璃/陶瓷处理层在分离过程和后续处理期间为薄的外延太阳能电池提供结构完整性。

公开(公告)号：US20130134376A1

公开(公告)日：2013-05-30

申请号：US13306096

申请日：2011-11-29

申请人： Jinhong Tong ,  Vidyut Gopal ,  Imran Hashim ,  Randall Higuchi ,  Albert Lee

发明人： Jinhong Tong ,  Vidyut Gopal ,  Imran Hashim ,  Randall Higuchi ,  Albert Lee

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： H01L45/08 ,  H01L27/2463 ,  H01L45/146 ,  H01L45/1616

摘要： Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium oxide for use in a variety of electronic devices. Forming the dielectric layer includes depositing zirconium oxide using atomic layer deposition. A method of atomic layer deposition to produce a metal-rich metal oxide comprises the steps of providing a silicon substrate in a reaction chamber, pulsing a zirconium precursor for a predetermined time to deposit a first layer, and oxidizing the first layer with water vapor to produce the metal-rich metal oxide. The metal-rich metal oxide has superior properties for non-volatile resistive-switching memories.

摘要翻译： 原子层沉积（ALD）可用于形成用于各种电子器件的氧化锆电介质层。 形成介电层包括使用原子层沉积沉积氧化锆。 原子层沉积法生产富金属的金属氧化物的方法包括以下步骤：在反应室中提供硅衬底，将锆前体脉冲预定的时间以沉积第一层，并用水蒸气氧化第一层 产生富金属的金属氧化物。 富金属的金属氧化物具有优异的非易失性电阻式开关存储器的性能。

公开(公告)号：US20130065377A1

公开(公告)日：2013-03-14

申请号：US13228744

申请日：2011-09-09

申请人： Vidyut Gopal ,  Yun Wang ,  Imran Hashim

发明人： Vidyut Gopal ,  Yun Wang ,  Imran Hashim

IPC分类号： H01L47/00

CPC分类号： H01L27/2463 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1641

摘要： A resistive switching nonvolatile memory device having an interface layer disposed between a doped silicon electrode and a variable resistance layer fabricated in the nonvolatile memory device and methods of fabricating the same. In one embodiment, the interface layer is a high-k layer having a lower electrical EOT than native silicon oxide to act as a diffusion barrier between the variable resistance layer and the silicon electrode. Alternatively, the high-k interface layer may be formed by performing a nitrogen treatment on a fabricated silicon oxide layer. In another embodiment, the interface layer may be fabricated by performing a nitrogen or ozone treatment on the native oxide layer. In another embodiment, the interface layer is a fabricated silicon oxide layer resulting in an improved diffusion barrier between the variable resistance layer and the silicon electrode. In all embodiments, the interface layer also passivates the surface of the silicon electrode.

摘要翻译： 一种电阻式开关非易失性存储器件，其具有设置在非易失性存储器件中制造的掺杂硅电极和可变电阻层之间的界面层及其制造方法。 在一个实施例中，界面层是具有比天然氧化硅更低的电EOT的高k层，以在可变电阻层和硅电极之间充当扩散势垒。 或者，可以通过对制造的氧化硅层进行氮处理来形成高k界面层。 在另一个实施方案中，界面层可以通过在自然氧化物层上进行氮气或臭氧处理来制造。 在另一个实施例中，界面层是制造的氧化硅层，从而在可变电阻层和硅电极之间形成改善的扩散势垒。 在所有实施例中，界面层还钝化硅电极的表面。

公开(公告)号：US20130056702A1

公开(公告)日：2013-03-07

申请号：US13612000

申请日：2012-09-12

申请人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiang

发明人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiang

IPC分类号： H01L45/00 ,  B82Y10/00 ,  B82Y99/00

CPC分类号： H01L45/145 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

摘要： Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional hafnium oxide based stacks of previous memory cells.

摘要翻译： 本发明的实施例一般涉及非易失性存储器件，例如ReRAM单元，以及用于制造这种存储器件的方法，其包括用于形成金属氧化物膜堆叠的优化的原子层沉积（ALD）工艺。 金属氧化物膜堆叠包含设置在金属氧化物主体层上的金属氧化物耦合层，每个层具有不同的晶粒结构/尺寸。 设置在金属氧化物层之间的界面有助于氧空位移动。 在许多示例中，与垂直于电极界面延伸的体膜中的晶粒相反，界面是不对准的晶界，其包含平行于电极界面延伸的许多晶界。 因此，氧空缺在切换期间被捕获和释放，而空位明显损失。 因此，与以前的存储单元的传统的基于氧化铪的堆叠相比，金属氧化物膜堆叠在存储单元应用中具有改进的开关性能和可靠性。

公开(公告)号：US08288297B1

公开(公告)日：2012-10-16

申请号：US13224021

申请日：2011-09-01

申请人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiag

发明人： Yun Wang ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Tony Chiag

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L45/145 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

摘要： Embodiments of the invention generally relate to nonvolatile memory devices, such as a ReRAM cells, and methods for manufacturing such memory devices, which includes optimized, atomic layer deposition (ALD) processes for forming metal oxide film stacks. The metal oxide film stacks contain a metal oxide coupling layer disposed on a metal oxide host layer, each layer having different grain structures/sizes. The interface disposed between the metal oxide layers facilitates oxygen vacancy movement. In many examples, the interface is a misaligned grain interface containing numerous grain boundaries extending parallel to the electrode interfaces, in contrast to the grains in the bulk film extending perpendicular to the electrode interfaces. As a result, oxygen vacancies are trapped and released during switching without significant loss of vacancies. Therefore, the metal oxide film stacks have improved switching performance and reliability during memory cell applications compared to traditional hafnium oxide based stacks of previous memory cells.

摘要翻译： 本发明的实施例一般涉及非易失性存储器件，例如ReRAM单元，以及用于制造这种存储器件的方法，其包括用于形成金属氧化物膜堆叠的优化的原子层沉积（ALD）工艺。 金属氧化物膜堆叠包含设置在金属氧化物主体层上的金属氧化物耦合层，每个层具有不同的晶粒结构/尺寸。 设置在金属氧化物层之间的界面有助于氧空位移动。 在许多示例中，与垂直于电极界面延伸的体膜中的晶粒相反，界面是不对齐的晶粒界面，其包含平行于电极界面延伸的许多晶界。 因此，氧空缺在切换期间被捕获和释放，而空位明显损失。 因此，与以前的存储单元的传统的基于氧化铪的堆叠相比，金属氧化物膜堆叠在存储单元应用中具有改进的开关性能和可靠性。