公开(公告)号：US06313033B1

公开(公告)日：2001-11-06

申请号：US09362923

申请日：1999-07-27

申请人： Tony Chiang ,  Bingxi Sun ,  Suraj Rengarajan ,  Peijun Ding ,  Barry Chin

发明人： Tony Chiang ,  Bingxi Sun ,  Suraj Rengarajan ,  Peijun Ding ,  Barry Chin

IPC分类号： H01L2144

CPC分类号： H01L27/1087 ,  H01L21/2855 ,  H01L21/76843 ,  H01L28/40 ,  H01L28/56 ,  H01L28/75

摘要： The invention provides a method for forming a microelectronic device comprising: forming a first electrode; depositing an adhesion layer over the first electrode utilizing high density plasma physical vapor deposition, wherein the adhesion layer comprises a material selected from Ta, TaNx, W, WNx, Ta/TaNx, W/WNx, and combinations thereof, depositing a dielectric layer over the adhesion layer; and forming a second electrode over the dielectric layer. The invention also provides a microelectronic device comprising: a first electrode; a second electrode; a dielectric layer disposed between the first and second electrodes; and an adhesion layer disposed between the first electrode and the dielectric layer, wherein the adhesion layer comprises a material selected from Ta, TaNx, W, WNx, Ta/TaNx, W/WNx, and combinations thereof.

摘要翻译： 本发明提供一种形成微电子器件的方法，包括：形成第一电极; 使用高密度等离子体物理气相沉积在第一电极上沉积粘合层，其中粘合层包括选自Ta，TaNx，W，WNx，Ta / TaNx，W / WNx的材料及其组合，将介电层沉积在 粘合层; 以及在所述电介质层上形成第二电极。 本发明还提供了一种微电子器件，包括：第一电极; 第二电极; 设置在所述第一和第二电极之间的电介质层; 以及设置在第一电极和电介质层之间的粘合层，其中粘合层包括选自Ta，TaNx，W，WNx，Ta / TaNx，W / WNx的材料及其组合。

公开(公告)号：US6139699A

公开(公告)日：2000-10-31

申请号：US863451

申请日：1997-05-27

申请人： Tony Chiang ,  Peijun Ding ,  Barry L. Chin

发明人： Tony Chiang ,  Peijun Ding ,  Barry L. Chin

IPC分类号： C23C14/00 ,  C23C14/06 ,  C23C14/14 ,  C23C14/16 ,  C23C14/34 ,  C23C14/35 ,  C23C14/58 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

CPC分类号： C23C14/345 ,  C23C14/0036 ,  C23C14/0641 ,  C23C14/16 ,  C23C14/3492 ,  C23C14/358 ,  C23C14/5833 ,  H01L21/2855 ,  H01L21/76838 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76864 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002

摘要： The present disclosure pertains to our discovery that residual stress residing in a tantalum film or tantalum nitride film can be controlled (tuned) by controlling particular process variables during film deposition. By tuning individual film stresses within a film stack, it is possible to balance stresses within the stack. Process variables of particular interest include: power to the sputtering target; process chamber pressure (i.e., the concentration of various gases and ions present in the chamber); substrate DC offset bias voltage (typically an increase in the AC applied substrate bias power); power to an ionization source (typically a coil); and temperature of the substrate upon which the film is deposited. The process chamber pressure and the substrate offset bias most significantly affect the film tensile and compressive stress components, respectively. The most advantageous tuning of a sputtered film is achieved using high density plasma sputter deposition, which provides for particular control over the ion bombardment of the depositing film surface. When the tantalum or tantalum nitride film is deposited using high density plasma sputtering, power to the ionization source can be varied for stress tuning of the film. We have been able to reduce the residual stress in tantalum or tantalum nitride films deposited using high density plasma sputtering to between about 6.times.10.sup.+9 dynes/cm.sup.2 and about -6.times.10.sup.+9 dynes/cm.sup.2 using techniques described herein. The tantalum and tantalum nitride films can also be tuned following deposition using ion bombardment of the film surface and annealing of the deposited film.

摘要翻译： 本公开涉及我们的发现，通过在膜沉积期间控制特定的工艺变量，可以控制（调整）驻留在钽膜或氮化钽膜中的残余应力。 通过调整薄膜叠层内的各个薄膜应力，可以平衡叠层内的应力。 特别感兴趣的过程变量包括：溅射靶的功率; 处理室压力（即存在于室中的各种气体和离子的浓度）; 衬底DC偏移偏置电压（通常为施加衬底偏置功率的AC增加）; 电源（通常为线圈）; 以及沉积膜的基板的温度。 处理室压力和基板偏移偏压分别最显着地影响膜的拉伸和压应力分量。 使用高密度等离子体溅射沉积来实现溅射膜的最有利的调谐，其提供对沉积膜表面的离子轰击的特定控制。 当使用高密度等离子体溅射沉积钽或氮化钽膜时，电离源的功率可以改变以用于膜的应力调谐。 使用本文所述的技术，我们已经能够将使用高密度等离子体溅射沉积的钽或氮化钽膜中的残余应力减小到约6×10 9 + 9达因/ cm 2和约-6×10 9达因/ cm 2之间。 也可以在使用离子轰击膜表面和沉积膜的退火进行沉积之后调整钽和氮化钽膜。

公开(公告)号：US06066892A

公开(公告)日：2000-05-23

申请号：US79107

申请日：1998-05-14

申请人： Peijun Ding ,  Tony Chiang ,  Imran Hashim ,  Bingxi Sun ,  Barry Chin

发明人： Peijun Ding ,  Tony Chiang ,  Imran Hashim ,  Bingxi Sun ,  Barry Chin

IPC分类号： H01L21/28 ,  C23C14/02 ,  C23C14/16 ,  C23C16/02 ,  C23C16/06 ,  H01L21/203 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L29/45

CPC分类号： H01L21/76843 ,  C23C14/024 ,  C23C14/025 ,  C23C14/16 ,  C23C14/165 ,  C23C16/0281 ,  C23C16/06 ,  H01L21/28556 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76888 ,  H01L23/53233 ,  H01L23/53238 ,  H01L21/2855 ,  H01L2924/0002

摘要： A copper metallization structure in which a layer of a copper alloy, such as Cu--Mg or Cu--Al is deposited over a silicon oxide based dielectric layer and a substantially pure copper layer is deposited over the copper alloy layer. The copper alloy layer serves as a seed or wetting layer for subsequent filling of via holes and trenches with substantially pure copper. Preferred examples of the alloying elements and their atomic alloying percentage include magnesium between 0.05 and 6% and aluminum between 0.05 and 0.3%. Further examples include boron, tantalum, tellurium, and titanium. Preferably, the copper alloy is deposited cold in a sputter process, but, during the deposition of the pure copper layer or afterwards in a separate annealing step, the temperature is raised sufficiently high to cause the alloying element of the copper alloy to migrate to the dielectric layer and form a barrier there against diffusion of copper into and through the dielectric layer. This barrier also promotes adhesion of the alloy layer to the dielectric layer, thereby forming a superior wetting and seed layer for subsequent copper full-fill techniques. Filling of the alloy-lined feature can be accomplished using PVD, CVD, or electro/electroless plating.

摘要翻译： 在铜合金层上沉积铜基金属化结构，其中在氧化硅基介电层和基本上纯的铜层上沉积诸如Cu-Mg或Cu-Al的铜合金层。 铜合金层用作种子或润湿层，用于随后用基本上纯的铜填充通孔和沟槽。 合金元素的优选实例及其原子合金化百分比包括0.05至6％的镁和0.05-0.3％的铝。 其他实例包括硼，钽，碲和钛。 优选地，铜合金在溅射过程中冷沉积，但是在纯铜层沉积期间或之后在单独的退火步骤中，温度升高到足够高以使铜合金的合金元素迁移到 电介质层，并形成阻挡铜，以扩散到介电层中并穿过介电层。 该屏障还促进了合金层对电介质层的粘附，从而形成了用于随后的铜全填充技术的优异的润湿和种子层。 可以使用PVD，CVD或电/无电镀来完成合金衬里特征的填充。

公开(公告)号：US6037257A

公开(公告)日：2000-03-14

申请号：US853191

申请日：1997-05-08

申请人： Tony Chiang ,  Peijun Ding ,  Barry Chin ,  Imran Hashim ,  Bingxi Sun

发明人： Tony Chiang ,  Peijun Ding ,  Barry Chin ,  Imran Hashim ,  Bingxi Sun

IPC分类号： C23C14/02 ,  C23C14/16 ,  C23C16/02 ,  C23C16/06 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763 ,  H01L21/44 ,  H01L23/48

CPC分类号： H01L21/76834 ,  C23C14/024 ,  C23C14/025 ,  C23C14/16 ,  C23C14/165 ,  C23C16/0281 ,  C23C16/06 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76888 ,  H01L23/53233 ,  H01L23/53238 ,  H01L21/2855 ,  H01L2924/0002

摘要： Copper and a small amount of an alloying metal such as magnesium or aluminum are cosputtered onto a substrate having oxide on at least a portion of its surface. Either the wafer is held at an elevated temperature during deposition or the sputtered film is annealed without the wafer being exposed to ambient. Due to the high temperature, the alloying metal diffuses to the surface. If a surface is exposed to a low partial pressure of oxygen or contacts silicon dioxide, the magnesium or aluminum forms a thin stable oxide. The alloying metal oxide encapsulates the copper layer to provide a barrier against copper migration, to form an adhesion layer over silicon dioxide, and to act as a seed layer for the later growth of copper, for example, by electroplating.

摘要翻译： 将铜和少量合金化金属如镁或铝分散在其表面的至少一部分上具有氧化物的衬底上。 在沉积期间晶片保持在升高的温度下，或者溅射膜被退火而晶片不暴露于环境中。 由于高温，合金金属扩散到表面。 如果表面暴露于低的氧分压或接触二氧化硅，则镁或铝形成薄的稳定的氧化物。 合金化金属氧化物封装铜层以提供阻挡铜迁移的屏障，以形成二氧化硅以上的粘合层，并且作为例如通过电镀的铜的后续生长的种子层。

公开(公告)号：US5911113A

公开(公告)日：1999-06-08

申请号：US820512

申请日：1997-03-18

申请人： Gongda Yao ,  Peijun Ding ,  Zheng Xu ,  Hoa Kieu

发明人： Gongda Yao ,  Peijun Ding ,  Zheng Xu ,  Hoa Kieu

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/52 ,  H01L23/522

CPC分类号： H01L21/76843 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L2924/0002

摘要： A process for fabricating metal plugs, such as aluminum plugs, in a semiconductor workpiece. The invention is suitable for filling narrow, high aspect ratio holes, and the invention minimizes the formation of TiAl3 or other products of interdiffusion between the plug and the wetting layer. First, an optional barrier layer is created by covering the bottom of a hole with a film containing titanium nitride doped with silicon. Second, a wetting layer is created by covering the side walls of a hole with a film containing titanium doped with silicon, in a Ti:Si molar ratio greater than 1:2. Preferably, the wetting layer is created by sputter deposition using a titanium sputtering target containing 0.1% to 20% wt silicon, most preferably 5% to 10% wt silicon. Third, the hole is filled by depositing a material consisting primarily of aluminum. The hole preferably is filled by sputter deposition using an aluminum sputtering target, optionally containing dopants such as copper. To facilitate filling the hole without voids, the aluminum sputter deposition preferably is performed "warm", i.e., with the workpiece at a temperature below the melting point of aluminum but high enough to promote reflow of the deposited material. The silicon atoms in the wetting layer inhibit the titanium from reacting with the aluminum, and the wetting layer facilitates filling the hole with the aluminum material without leaving unfilled voids.

摘要翻译： 一种用于在半导体工件中制造诸如铝塞的金属插头的工艺。 本发明适用于填充狭窄的高纵横比孔，并且本发明使塞子和润湿层之间的TiAl 3或其他相互扩散产物的形成最小化。 首先，通过用含有掺杂硅的氮化钛的膜覆盖孔的底部来产生可选的阻挡层。 第二，通过用含有掺杂硅的钛的膜覆盖孔的侧壁，Ti：Si摩尔比大于1:2产生润湿层。 优选地，通过使用含有0.1重量％至20重量％硅，最优选5重量％至10重量％硅的钛溅射靶的溅射沉积来产生润湿层。 第三，通过沉积主要由铝构成的材料填充孔。 优选地，通过使用铝溅射靶的溅射沉积来填充孔，任选地含有诸如铜的掺杂剂。 为了方便填充孔而没有空隙，铝溅射沉积优选地进行“暖”，即工件在低于铝的熔点的温度下，但足够高以促进沉积材料的回流。 润湿层中的硅原子阻止钛与铝反应，并且润湿层有助于用铝材料填充孔而不留下未填充的空隙。

公开(公告)号：US10984993B2

公开(公告)日：2021-04-20

申请号：US13876133

申请日：2010-12-22

申请人： Peng Chen ,  Mengxin Zhao ,  Gang Wei ,  Liang Zhang ,  Bai Yang ,  Guilong Wu ,  Peijun Ding

发明人： Peng Chen ,  Mengxin Zhao ,  Gang Wei ,  Liang Zhang ,  Bai Yang ,  Guilong Wu ,  Peijun Ding

IPC分类号： H01J37/34 ,  H01J37/32 ,  C23C14/50 ,  C23C14/35

摘要： A plasma processing apparatus includes a chamber (20) and a target (25) above the chamber (20). The surface of the target (25) contacts the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conductive sub-chamber (22), which are superposed. The first conductive sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conductive sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.

公开(公告)号：US08845809B2

公开(公告)日：2014-09-30

申请号：US12556454

申请日：2009-09-09

申请人： Steve Poppe ,  Yan Rozenzon ,  David Z. Chen ,  Xiaole Yan ,  Peijun Ding ,  Zheng Xu

发明人： Steve Poppe ,  Yan Rozenzon ,  David Z. Chen ,  Xiaole Yan ,  Peijun Ding ,  Zheng Xu

IPC分类号： C23C16/00 ,  C30B25/16 ,  C23C16/455 ,  C23C16/48 ,  C30B25/12 ,  C30B25/14 ,  C23C16/44 ,  C30B25/10 ,  C23C16/458

CPC分类号： C23C16/4408 ,  C23C16/455 ,  C23C16/4587 ,  C23C16/481 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B25/165

摘要： One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side mounting substrates and a back side. The front sides of the vertically positioned susceptors face each other, and the vertical edges of the susceptors are in contact with each other. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas flow directions inside the chamber can be alternated by controlling the gas nozzles. The gas nozzles are configured to inject a small amount of purge gas including at least one of: HCl, SiCl4, and H2 when the gas nozzles are not injecting reaction gas. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.

摘要翻译： 一个实施例提供了用于材料沉积的装置。 该装置包括反应室和一对基座。 每个感受体具有正面安装基板和背面。 垂直定位的基座的前侧彼此面对，并且基座的垂直边缘彼此接触。 该装置还包括多个用于注入反应气体的气体喷嘴。 可以通过控制气体喷嘴来改变室内的气体流动方向。 气体喷嘴被配置为当气体喷嘴不注入反应气体时，喷射包括以下中的至少一种的少量吹扫气体：HCl，SiCl 4和H 2。 该装置包括位于反应室外部的多个加热单元。 加热单元以这样的方式布置，使得它们将热能直接辐射到基座的背面。

公开(公告)号：US08460519B2

公开(公告)日：2013-06-11

申请号：US11389610

申请日：2006-03-23

申请人： Mengqi Ye ,  Zhendong Liu ,  Peijun Ding

发明人： Mengqi Ye ,  Zhendong Liu ,  Peijun Ding

IPC分类号： C23C14/35

CPC分类号： H01L21/67011 ,  C23C14/225 ,  C23C14/35 ,  C23C14/505 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3455

摘要： Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.

摘要翻译： 在一个实施例中，在物理气相沉积（PVD）室中的溅射可以利用相对于衬底的横向偏移和倾斜的目标。 另一方面，可以减小目标功率以增强膜保护。 在另一方面，磁控管磁体可以相对较强并且平衡良好以增强膜保护。 在另一方面，可以提供快门以在启动条件下保护基板。 描述和要求保护其他实施例。

公开(公告)号：US20100092697A1

公开(公告)日：2010-04-15

申请号：US12355463

申请日：2009-01-16

申请人： Steve Poppe ,  Yan Rozenzon ,  David Z. Chen ,  Xiaole Yan ,  Peijun Ding ,  Zheng Xu

发明人： Steve Poppe ,  Yan Rozenzon ,  David Z. Chen ,  Xiaole Yan ,  Peijun Ding ,  Zheng Xu

IPC分类号： C23C16/44 ,  C23C16/54

CPC分类号： C23C16/4587 ,  C23C16/45502 ,  C23C16/46 ,  C23C16/54 ,  C30B25/105 ,  C30B25/12 ,  C30B25/165

摘要： One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side and a back side, and the front side mounts substrates. The susceptors are positioned vertically in such a way that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas nozzles are controlled in such a way that gas flow directions inside the chamber can be alternated, thereby facilitating uniform material deposition. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.

摘要翻译： 一个实施例提供了用于材料沉积的装置。 该装置包括反应室和一对基座。 每个感受体具有前侧和后侧，并且前侧安装基板。 感应器垂直定位，使得基座的前侧彼此面对，并且基座的垂直边缘彼此接触，从而在基板之间形成基本封闭的窄通道。 该装置还包括多个用于注入反应气体的气体喷嘴。 气体喷嘴被控制成使得室内的气体流动方向可以交替，从而有利于均匀的材料沉积。 该装置包括位于反应室外部的多个加热单元。 加热单元以这样的方式布置，使得它们将热能直接辐射到基座的背面。

公开(公告)号：US20100065111A1

公开(公告)日：2010-03-18

申请号：US12343116

申请日：2008-12-23

申请人： Jianming Fu ,  Zheng Xu ,  Peijun Ding ,  Chentao Yu ,  Guanghua Song ,  Jianjun Liang

发明人： Jianming Fu ,  Zheng Xu ,  Peijun Ding ,  Chentao Yu ,  Guanghua Song ,  Jianjun Liang

IPC分类号： H01L31/0288

CPC分类号： H01L31/1804 ,  H01L21/3221 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： One embodiment of the present invention provides a method for fabricating a solar cell. The method includes: melting a metallurgical-grade (MG) Si feedstock, lowering a single-crystalline Si seed to touch the surface of the molten MG-Si, slowly pulling out a single-crystal Si ingot of the molten MG-Si, processing the Si ingot into single crystal Si wafers to form MG-Si substrates for subsequent epitaxial growth, leaching out residual metal impurities in the MG-Si substrate, epitaxially growing a layer of single-crystal Si thin film doped with boron on the MG-Si substrate, doping phosphor to the single-crystal Si thin film to form an emitter layer, depositing an anti-reflection layer on top of the single-crystal Si thin film, and forming the front and the back electrical contacts.

摘要翻译： 本发明的一个实施例提供一种制造太阳能电池的方法。 该方法包括：熔化冶金级（MG）Si原料，降低单晶Si种子以接触熔融的MG-Si的表面，缓慢拉出熔融的MG-Si的单晶Si锭，加工 Si晶锭形成单晶Si晶片以形成用于随后的外延生长的MG-Si衬底，浸出MG-Si衬底中的残余金属杂质，在MG-Si上外延生长掺杂有硼的单晶Si薄膜层 衬底，掺杂磷光体到单晶Si薄膜以形成发射极层，在单晶Si薄膜的顶部沉积抗反射层，并形成前后电接触。