公开(公告)号：US20240345338A1

公开(公告)日：2024-10-17

申请号：US18298685

申请日：2023-04-11

Applicant: Wisconsin Alumni Research Foundation

Inventor： Jiamian Hu ,  Shihao Zhuang ,  Chang-Beom Eom

IPC: G02B6/42 ,  H04B10/50

CPC classification number: G02B6/4215 ,  G02B6/4283 ,  H04B10/505

Abstract: Optoelectronic transducers that convert a femtosecond (fs)-timescale laser pulse into an a.c. electrical current pulse with an extremely high frequency and a high quality factor (Q) are provided. Both the frequency and amplitude of the a.c. electrical current pulse can be dynamically tuned by the application of a varying bias magnetic field. The optoelectronic transducers are based on a trilayered freestanding membrane that functions as both an acoustic cavity and a magnon cavity. The freestanding membrane includes an electrical conductor layer, a magnetic insulator layer, and a dielectric layer arranged in a vertical stack.

公开(公告)号：US11879185B2

公开(公告)日：2024-01-23

申请号：US17544298

申请日：2021-12-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Rui Liu ,  Paul Gregory Evans ,  Donald E. Savage ,  Thomas Francis Kuech

IPC: C30B29/20 ,  C23C16/40 ,  C30B1/02

CPC classification number: C30B29/20 ,  C23C16/403 ,  C30B1/023

Abstract: Aluminum oxide (Al2O3) thin films having a high γ-phase purity and low defect density and methods for making the aluminum oxide thin films are provided. Also provided are epitaxial heterostructures that incorporate the aluminum oxide thin films as growth substrates and methods of forming the heterostructures. The Al2O3 films are pure, or nearly pure, γ-Al2O3. As such, the films contain no, or only a very low concentration of, other Al2O3 polymorph phases. In particular, the Al2O3 films contain no, or only a very low concentration of, the θ-Al2O3 polymorph phase.

公开(公告)号：US11437234B2

公开(公告)日：2022-09-06

申请号：US16985455

申请日：2020-08-05

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee

IPC: H01L21/02 ,  H01L29/24 ,  C23C14/08 ,  C23C14/28 ,  H01L29/778

Abstract: Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

公开(公告)号：US11189780B2

公开(公告)日：2021-11-30

申请号：US16387898

申请日：2019-04-18

Applicant: WISCONSIN ALUMNI RESEARCH FOUNDATION

Inventor： Chang-Beom Eom ,  Mark Steven Rzchowski ,  Julian James Irwin ,  Shane Martin Lindeman

IPC: H01L41/20 ,  H01L27/22 ,  H01L27/20 ,  H01L41/37 ,  H01L43/12 ,  H01L41/18 ,  H01L41/12 ,  H01L43/02

Abstract: Magnetoelectric devices based on piezoelectric/magnetostrictive bilayers are provided. Also provided are methods of using the devices to modulate or to sense the magnetization of the magnetostrictive material. The devices include an island of magnetostrictive material that is strain-coupled to a thin layer of a piezoelectric material at an interface. A bottom electrode is placed in electrical communication with one surface of the piezoelectric film, and an unpaired top electrode is placed in electrical communication with a second, opposing surface of the piezoelectric film.

公开(公告)号：US10796907B2

公开(公告)日：2020-10-06

申请号：US16252783

申请日：2019-01-21

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Jungwoo Lee

IPC: H01L21/02 ,  H01L29/24 ,  C23C14/08 ,  C23C14/28 ,  H01L29/778

Abstract: Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

公开(公告)号：US10649240B2

公开(公告)日：2020-05-12

申请号：US16237804

申请日：2019-01-02

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Chang-Beom Eom ,  Jaeseong Lee ,  Daesu Lee ,  Sang June Cho ,  Dong Liu

IPC: G02F1/00 ,  G02F1/01 ,  G02F1/313 ,  H01P3/00

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.

公开(公告)号：US20180122910A1

公开(公告)日：2018-05-03

申请号：US15464536

申请日：2017-03-21

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Daesu Lee

IPC: H01L29/24 ,  H03K17/687 ,  H01L21/02 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L45/00 ,  H03K17/51

CPC classification number: H01L29/24 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7869 ,  H01L45/065 ,  H01L45/1206 ,  H01L45/146 ,  H03K17/04 ,  H03K17/51 ,  H03K17/687

Abstract: Layers of high quality VO2 and methods of fabricating the layers of VO2 are provided. The layers are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and the same epitaxial orientation.

公开(公告)号：US09627490B1

公开(公告)日：2017-04-18

申请号：US14974178

申请日：2015-12-18

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Daesu Lee

IPC: H01L29/24 ,  H01L21/02 ,  H01L21/36 ,  H03K17/56 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H03K17/687 ,  H01L45/00 ,  H03K17/51

CPC classification number: H01L29/24 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7869 ,  H01L45/065 ,  H01L45/1206 ,  H01L45/146 ,  H03K17/04 ,  H03K17/51 ,  H03K17/687

Abstract: Layered oxide structures comprising an overlayer of high quality VO2 and methods of fabricating the layered oxide structures are provided. Also provided are high-speed switches comprising the layered structures and methods of operating the high-speed switches. The layered oxide structures include high quality VO2 epitaxial films on isostructural SnO2 growth templates.