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61 条记录 (耗时 0.029 秒)

    LED thermal management system and method
    22.
    发明授权
    LED thermal management system and method 有权

    公开(公告)号：US09781803B2

    公开(公告)日：2017-10-03

    申请号：US12325208

    申请日：2008-11-30

    申请人： George R. Brandes

    发明人： George R. Brandes

    IPC分类号： H05B37/02 ,  H05B33/08

    CPC分类号： H05B33/0887 ,  H05B33/089

    摘要： A thermal management system for reducing or eliminating heat-mediated degradation of LED performance and/or operating life. The system may include a thermal controller arranged to respond to an LED operating condition, and to responsively limit temperature in the LED. The thermal controller in one implementation includes a bypass circuit containing a bypass control element, such as a varistor, Zener diode, or antifuse device, and arranged to divert current from flowing to the LED so that the LED remains in a cool state, e.g., below 75° C. The system may be arranged to (I) at least partially attenuate the power supplied to an LED so as to reduce heat generation in such LED and maintain the LED below a threshold temperature and/or (II) remove heat from the LED to maintain temperature of the LED below a threshold temperature.

    Optoelectronic device with upconverting luminophoric medium
    24.
    发明授权
    Optoelectronic device with upconverting luminophoric medium 有权
    具有上转换发光介质的光电器件

    公开(公告)号：US08297061B2

    公开(公告)日：2012-10-30

    申请号：US11832785

    申请日：2007-08-02

    申请人： George R. Brandes

    发明人： George R. Brandes

    IPC分类号： F25B21/00

    CPC分类号： H01L33/644 ,  C09K11/7771 ,  H01L33/44 ,  H01L33/502 ,  H01L33/507 ,  H01L33/60 ,  H01L2224/48091 ,  Y10T29/4935 ,  H01L2924/00014

    摘要： A microelectronic device that in operation generates or includes component(s) that generate heat, in which the device comprises a heat conversion medium that converts such heat into a light emission having a shorter wavelength than such heat, to thereby cool the device and dissipate the unwanted heat by such light output. The heat conversion medium can include an upconverting luminophoric material, e.g., an anti-Stokes phosphor or phosphor composition. The provision of such heat conversion medium enables thermal management of microelectronic devices, e.g., optoelectronic devices, to be achieved in an efficient manner, to prolong the operational service life of devices such as LEDs, laser diodes, etc. that are degraded in performance by excessive heat generation in their operation.

    摘要翻译： 在运行中产生或包括产生热量的组件的微电子器件，其中该器件包括将这种热转换成具有比该热量更短的波长的光发射的热转换介质，从而冷却该器件并消散 不必要的热量通过这种光输出。 热转换介质可以包括上转换发光体材料，例如反斯托克斯荧光体或磷光体组合物。 提供这样的热转换介质使得能够以有效的方式实现微电子器件（例如光电器件）的热管理，以延长由性能下降的器件（例如LED，激光二极管等）的器件的使用寿命 其运行过热发热。

    LIGHTING APPARATUS WITH ENCODED INFORMATION
    25.
    发明申请
    LIGHTING APPARATUS WITH ENCODED INFORMATION 审中-公开
    带有编码信息的照明设备

    公开(公告)号：US20110248836A1

    公开(公告)日：2011-10-13

    申请号：US12758007

    申请日：2010-04-11

    申请人： George R. Brandes ,  Julio A. Garceran

    发明人： George R. Brandes ,  Julio A. Garceran

    IPC分类号： G08B5/00

    CPC分类号： H01L25/167 ,  H01L25/0753 ,  H01L33/486 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/12044 ,  H01L2924/13033 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A solid state emitter or emitter package has an associated information containing element including machine readable encoded information that may be indicative of or enable retrieval of information useful for operation and/or control of at least one emitter An information containing element may be dynamically updateable, and may receive signals from at least one sensor arranged to sense a condition or characteristic of an emitter device. Operation of at least one emitter may be adjusted responsive to sensed values and predeveloped operating settings correlated to such values to mitigate degradation of output characteristics. A lighting device such as a lamp or light fixture may include an information exchange element arranged to communicate with an information containing element of an emitter or emitter package. Operation of a lighting device may depend on authentication of an emitter by a lighting.

    摘要翻译： 固态发射器或发射器封装具有关联的信息包含元件，其包括机器可读编码信息，其可以指示或使得能够检索对于至少一个发射器的操作和/或控制有用的信息。包含信息的元件可以是动态可更新的，以及 可以从布置成感测发射器装置的状态或特性的至少一个传感器接收信号。 至少一个发射器的操作可以响应于与这些值相关联的感测值和预先开发的操作设置而被调整，以减轻输出特性的劣化。 诸如灯或灯具的照明装置可以包括被布置为与发射器或发射器封装的信息容纳元件通信的信息交换元件。 照明装置的操作可以取决于通过照明对发射器的认证。

    PENDEO EPITAXIAL STRUCTURES AND DEVICES
    26.
    发明申请
    PENDEO EPITAXIAL STRUCTURES AND DEVICES 有权
    PENDEO外形结构和设备

    公开(公告)号：US20090152565A1

    公开(公告)日：2009-06-18

    申请号：US11957154

    申请日：2007-12-14

    申请人： George R. Brandes ,  Arpan Chakraborty ,  Shuji Nakamura ,  Monica Hansen ,  Steven Denbaars

    发明人： George R. Brandes ,  Arpan Chakraborty ,  Shuji Nakamura ,  Monica Hansen ,  Steven Denbaars

    IPC分类号： H01L29/20 ,  H01L21/76

    CPC分类号： H01L21/02639 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0265 ,  H01L29/2003 ,  H01L29/66462

    摘要： A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures.

    摘要翻译： 一种衬底，包括包括沟槽腔的沟槽横向外延生长结构，其中所述沟槽腔在所述沟槽的内表面的至少一部分上包括支撑其上的聚结Pendeo层的生长阻挡层或图案化材料。 这种衬底适用于进行横向外延过度生长以形成覆盖在沟槽腔上的桥接横向过度生长层。 桥接的横向过生长形成提供衬底表面，在衬底表面上，可以在其中制造微电子器件（例如激光二极管，高电子迁移率晶体管，紫外发光二极管以及低位错密度至关重要的其它器件）中生长外延层。 可以形成本发明的外延衬底结构，而不需要诸如常规Pendeo外延过度生长结构中所需的深沟槽。

    III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier
    27.
    发明授权
    III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier 有权
    具有高Al AlGaN扩散阻挡层的III族氮化物光电子器件结构

    公开(公告)号：US07282744B2

    公开(公告)日：2007-10-16

    申请号：US10840515

    申请日：2004-05-06

    申请人： Jeffrey S. Flynn ,  Huoping Xin ,  George R. Brandes

    发明人： Jeffrey S. Flynn ,  Huoping Xin ,  George R. Brandes

    IPC分类号： H01L29/22

    CPC分类号： H01L33/32 ,  H01L33/02

    摘要： A III-nitride electronic device structure including doped material, an active region and a barrier material arranged to suppress transport of dopant from the doped material into the active region, wherein the barrier material comprises high-Al content AlxGayN, wherein x+y=1, and x≧0.50. In a specific aspect, AIN is used as a migration/diffusion barrier layer at a thickness of from about 5 to about 200 Angstroms, to suppress flux of magnesium and/or silicon dopant material into the active region of the III-nitride electronic device, e.g., a UV LED optoelectronic device.

    摘要翻译： 一种III族氮化物电子器件结构，包括掺杂材料，有源区和阻挡材料，其被布置成抑制掺杂剂从掺杂材料转移到有源区中，其中阻挡材料包括高Al含量的Al x 其中x + y = 1，x> = 0.50。 在一个具体方面，将AIN用作厚度为约5至约200埃的迁移/扩散阻挡层，以抑制镁和/或硅掺杂剂材料流入III族氮化物电子器件的有源区， 例如，UV LED光电器件。