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46 条记录 (耗时 0.027 秒)

    Angular velocity sensor
    21.
    发明授权
    Angular velocity sensor 有权
    角速度传感器

    公开(公告)号：US06308567B1

    公开(公告)日：2001-10-30

    申请号：US09458954

    申请日：1999-12-10

    申请人： Hirofumi Higuchi ,  Nobuyuki Ohya ,  Tsuyoshi Fukada

    发明人： Hirofumi Higuchi ,  Nobuyuki Ohya ,  Tsuyoshi Fukada

    IPC分类号： G01P904

    CPC分类号： G01C19/56

    摘要： A compact angular velocity sensor, which can improve an S/N (signal/noise) ratio. An angular velocity sensor includes an SOI substrate, four oscillatory masses movably supported to the SOI substrate, and four detection electrodes provided outer side of the oscillatory masses for detecting displacements of the oscillatory masses. The oscillatory masses are arranged point-symmetry with respect to a predetermined point K in a flat plane parallel to the SOI substrate. Each of the four oscillatory masses adjacent each other is oscillated in reverse phase in a circumstantial direction about the predetermined point K along the flat plane. When an angular velocity &OHgr; is generated about the predetermined point K, detection weights of the oscillatory masses are displaced along a direction perpendicular to oscillation direction in the flat plane. Capacitance changes between the detection weights and the detection electrodes are processed in a circuit portion so as to output angular velocity detection signal S1 due to Corioli's force with canceling external acceleration and centrifugal force acted to the detection weights of the oscillatory masses.

    摘要翻译： 一个紧凑的角速度传感器，可以提高S / N（信号/噪声）比。 角速度传感器包括SOI基板，可移动地支撑到SOI基板的四个振荡块，以及设置在振荡块的外侧的四个检测电极，用于检测振荡质量的位移。 相对于与SOI衬底平行的平面中的预定点K，振荡质量被布置成点对称。 在彼此相邻的四个振荡质量块中的每一个沿着平面在围绕预定点K的环境方向上以相反方向振荡。 当围绕预定点K产生角速度OMEGA时，振荡质量的检测权重沿平面内与振荡方向垂直的方向移位。 在电路部分处理检测权重和检测电极之间的电容变化，以便通过抵消外部加速度和科氏力的角度来输出角速度检测信号S1，该离心力作用于振荡质量的检测重量。

    Method for producing an acceleration sensor
    25.
    发明授权
    Method for producing an acceleration sensor 失效
    加速度传感器的制造方法

    公开(公告)号：US5525549A

    公开(公告)日：1996-06-11

    申请号：US49801

    申请日：1993-04-21

    申请人： Tsuyoshi Fukada ,  Yoshimi Yoshino ,  Yukihiko Tanizawa

    发明人： Tsuyoshi Fukada ,  Yoshimi Yoshino ,  Yukihiko Tanizawa

    IPC分类号： B81B3/00 ,  G01L9/00 ,  G01P15/08 ,  G01P15/12 ,  H01L21/3063 ,  H01L21/78 ,  H01L21/64

    CPC分类号： B81C1/00888 ,  B81C1/00158 ,  G01L9/0055 ,  G01P15/0802 ,  G01P15/123 ,  H01L21/3063 ,  H01L21/78 ,  B81B2201/0235 ,  B81C2201/0114 ,  B81C2201/053 ,  Y10S148/028 ,  Y10S148/159 ,  Y10S438/977

    摘要： A method for producing a semiconductor device that is capable of solving problems related to dicing a metal thin film used for electrochemical etching. According to the method, an n type epitaxial thin layer is formed on a p type single-crystal silicon wafer. An n.sup.+ type diffusion layer is formed in a scribe line area on the epitaxial layer. An n.sup.+ type diffusion layer is formed in an area of the epitaxial layer which corresponds to a predetermined portion of the wafer. An aluminum film is formed over the diffusion layers. The aluminum film has a clearance for passing a dicing blade. Portions of the wafer are electrochemically etched by supplying electricity through the aluminum film and the diffusion layers, to leave portions of the epitaxial layer. The wafer is diced into chips along the scribe line area. Each of the chips forms a separate semiconductor device. The electrochemical etching of the wafer is carried out after the formation of the aluminum film by immersing the wafer in a KOH aqueous solution and by supplying electricity through the aluminum film. The electrochemical etching is terminated at an inflection point where an etching current inflects to a constant level from a peak level. During the electrochemical etching, the diffusion layer reduces horizontal resistance in the epitaxial layer, so that the etched parts receive a sufficient potential to perform the etching.

    摘要翻译： 一种能够解决与用于电化学蚀刻的金属薄膜切割相关的问题的半导体器件的制造方法。 根据该方法，在p型单晶硅晶片上形成n型外延薄层。 在外延层上的划线区域中形成n +型扩散层。 在对应于晶片的预定部分的外延层的区域中形成n +型扩散层。 在扩散层上形成铝膜。 铝膜具有用于通过切割刀片的间隙。 通过供电通过铝膜和扩散层对晶片的一部分进行电化学蚀刻，以留下外延层的部分。 晶片沿着划线区切成芯片。 每个芯片形成单独的半导体器件。 通过将晶片浸入KOH水溶液中并通过铝膜供电，在形成铝膜之后进行晶片的电化学蚀刻。 在蚀刻电流从峰值水平变为恒定水平的拐点处终止电化学蚀刻。 在电化学蚀刻期间，扩散层减小外延层中的水平电阻，使得蚀刻部分具有足够的电位进行蚀刻。

    Semiconductor sensor having heater on insulation film and manufacturing method of the same
    26.
    发明授权
    Semiconductor sensor having heater on insulation film and manufacturing method of the same 有权
    具有隔热膜加热器的半导体传感器及其制造方法

    公开(公告)号：US08006553B2

    公开(公告)日：2011-08-30

    申请号：US12458272

    申请日：2009-07-07

    申请人： Ryuichirou Abe ,  Tsuyoshi Fukada ,  Keisuke Suzui

    发明人： Ryuichirou Abe ,  Tsuyoshi Fukada ,  Keisuke Suzui

    IPC分类号： G01F1/68

    CPC分类号： B81B7/0012 ,  B81B2201/0214 ,  G01F1/6845 ,  G01F1/692

    摘要： A sensor includes: a silicon substrate having a hollow portion, which is arranged on a backside of the substrate; an insulation film disposed on a front side of the substrate and covering the hollow portion; a heater disposed on the insulation film, made of a semiconductor layer, and configured to generate heat; and an anti-stripping film for protecting the insulation film from being removed from the silicon substrate. The silicon substrate, the insulation film and the semiconductor layer provide a SOI substrate. The hollow portion has a sidewall and a bottom. The anti-stripping film covers at least a boundary between the sidewall and the bottom of the hollow portion.

    摘要翻译： 传感器包括：具有中空部分的硅衬底，其设置在衬底的背面; 绝缘膜，设置在所述基板的前侧并覆盖所述中空部; 设置在绝缘膜上的加热器，由半导体层制成，并且被配置为产生热量; 以及用于保护绝缘膜不被从硅衬底移除的防剥离膜。 硅衬底，绝缘膜和半导体层提供SOI衬底。 中空部分具有侧壁和底部。 防剥离膜至少覆盖中空部分的侧壁和底部之间的边界。

    Method for manufacturing movable portion of semiconductor device
    27.
    发明授权
    Method for manufacturing movable portion of semiconductor device 有权
    制造半导体器件的可移动部分的方法

    公开(公告)号：US07214625B2

    公开(公告)日：2007-05-08

    申请号：US10936539

    申请日：2004-09-09

    申请人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

    发明人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

    IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L29/82

    CPC分类号： B81C1/00619 ,  B81C2201/0112

    摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

    摘要翻译： 一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

    Method of manufacturing semiconductor device capable of sensing dynamic quantity
    29.
    发明授权
    Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
    能够感测动态量的半导体器件的制造方法

    公开(公告)号：US06753201B2

    公开(公告)日：2004-06-22

    申请号：US10154784

    申请日：2002-05-28

    申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    IPC分类号： H01L2100

    CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

    摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

    摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。