公开(公告)号：US20060128046A1

公开(公告)日：2006-06-15

申请号：US11346373

申请日：2006-02-03

申请人： Toshikazu Onishi

发明人： Toshikazu Onishi

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/164 ,  H01S5/2231 ,  H01S5/3072 ,  H01S5/34326 ,  H01S5/3436

摘要： A semiconductor laser device according to the present invention has a semiconductor substrate, an active layer formed on the semiconductor substrate and made of a compound semiconductor containing phosphorus, a guide layer formed on the active layer and made of a compound semiconductor a dopant diffusion preventing layer formed on the guide layer and made of a semiconductor compound containing arsenic, and a clad layer formed on the dopant diffusion preventing layer and made of a compound semiconductor containing a dopant.

摘要翻译： 根据本发明的半导体激光器件具有半导体衬底，形成在半导体衬底上并由含磷的化合物半导体构成的有源层，形成在有源层上并由化合物半导体构成的引导层，掺杂剂扩散防止层 形成在引导层上并由含砷的半导体化合物制成，以及形成在掺杂剂扩散防止层上并由含有掺杂剂的化合物半导体构成的覆层。

公开(公告)号：US07037743B2

公开(公告)日：2006-05-02

申请号：US10699986

申请日：2003-11-03

申请人： Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

发明人： Toshikazu Onishi ,  Hideto Adachi ,  Masaya Mannou ,  Akira Takamori

IPC分类号： H01L21/00 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/2231 ,  H01S5/3425 ,  H01S5/34326

摘要： A semiconductor laser device is provided that includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer provided on the semiconductor substrate and an active layer provided on the cladding layer. The active layer has a super-lattice structure including a disordered region in a vicinity of a cavity end face. A first cladding layer of a second conductivity type is provided on the active layer, an etching stop layer of the second conductivity type is provided on the first cladding layer and a second cladding layer of the second conductivity type is provided on the etching stop layer. The second cladding layer forms a ridge structure that extends along a cavity length direction. An impurity concentration in the etching stop layer in the vicinity of the cavity end face is equal to or smaller than about 2×1018 cm−3.

摘要翻译： 提供一种半导体激光器件，其包括第一导电类型半导体衬底，设置在半导体衬底上的第一导电类型覆层和设置在包覆层上的有源层。 有源层具有包括空腔端面附近的无序区域的超晶格结构。 在有源层上设置有第二导电类型的第一包层，在第一包层上设置第二导电类型的蚀刻阻挡层，在蚀刻停止层上设置第二导电类型的第二包覆层。 第二包层形成沿着空腔长度方向延伸的脊结构。 在腔体端面附近的蚀刻停止层中的杂质浓度等于或小于约2×10 18 cm -3 -3。

公开(公告)号：US06991955B2

公开(公告)日：2006-01-31

申请号：US10460174

申请日：2003-06-13

申请人： Toshikazu Onishi

发明人： Toshikazu Onishi

IPC分类号： H01L21/00

CPC分类号： H01L33/305 ,  B82Y20/00 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02546 ,  H01L21/02579 ,  H01S5/209 ,  H01S5/2275 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/34326

摘要： An inventive method includes the steps of: growing a first p-type semiconductor layer of a compound semiconductor containing phosphorus on a substrate; and growing a second p-type semiconductor layer of a compound semiconductor containing arsenic on the first p-type semiconductor layer. While the first p-type semiconductor layer is grown, magnesium is added to the first semiconductor layer. While the second p-type semiconductor layer is grown, a p-type impurity other than magnesium is added to the second semiconductor layer.

公开(公告)号：US20050079646A1

公开(公告)日：2005-04-14

申请号：US10959077

申请日：2004-10-07

申请人： Toshikazu Onishi ,  Kenichi Inoue

发明人： Toshikazu Onishi ,  Kenichi Inoue

IPC分类号： H01S5/30 ,  H01S5/343 ,  H01L21/00

CPC分类号： H01S5/305 ,  B82Y20/00 ,  H01S5/3063 ,  H01S5/34326

摘要： A first semiconductor layer consisting of AlGaInP is formed on a substrate consisting of GaAs by crystal growth while adding magnesium (Mg) that is a p-type dopant to the first semiconductor layer. A second semiconductor layer consisting of GaAs is then grown on the first semiconductor layer without adding any magnesium to the second semiconductor layer. Thus, the second semiconductor layer can prevent unintended doping (memory effect) produced by magnesium.

摘要翻译： 由AlGaInP组成的第一半导体层通过晶体生长在由GaAs构成的衬底上形成，同时向第一半导体层添加作为p型掺杂剂的镁（Mg）。 然后在第一半导体层上生长由GaAs组成的第二半导体层，而不向第二半导体层添加任何镁。 因此，第二半导体层可以防止由镁产生的非预期掺杂（记忆效应）。

公开(公告)号：US6110865A

公开(公告)日：2000-08-29

申请号：US34385

申请日：1998-03-04

申请人： Shigeo Hayashi ,  Toshikazu Onishi ,  Koji Narita ,  Ryuichi Kisaka

发明人： Shigeo Hayashi ,  Toshikazu Onishi ,  Koji Narita ,  Ryuichi Kisaka

IPC分类号： B41M3/14 ,  B41M5/00 ,  B41M5/382 ,  B41M5/41 ,  B41M5/42 ,  B41M5/44 ,  G03G7/00 ,  B41M5/035 ,  B41M5/38

CPC分类号： G03G7/0086 ,  B41M3/14 ,  B41M5/38214 ,  B41M5/41 ,  B41M5/44 ,  Y10S428/913 ,  Y10S428/914

摘要： A recording composite sheet capable of being separated into two sheet sections comprises a first sheet section (2) having a first recording layer (5) formed on a front surface of a first support sheet (4) and a second sheet section (3) comprising a second support sheet (7) and bonded to the first sheet sections to an extent that the bonded sheet sections are separable from each other by hand.

摘要翻译： 能够分离成两个片段的记录复合片包括具有形成在第一支撑片（4）的前表面上的第一记录层（5）和第二片部分（3）的第一片部分（2），包括 第二支撑片（7），并且结合到第一片部分上，使得接合的片部分可以用手彼此分离。

公开(公告)号：US08217858B2

公开(公告)日：2012-07-10

申请号：US12985699

申请日：2011-01-06

申请人： Toshikazu Onishi ,  Tsuyoshi Takegami

发明人： Toshikazu Onishi ,  Tsuyoshi Takegami

IPC分类号： G09G3/20

CPC分类号： H01J1/316 ,  H01J9/027 ,  H01J29/02 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489

摘要： An image display apparatus includes a rear plate including electron emitting devices each including a pair of electrodes and an electron emitting unit, first wirings each interconnecting electrodes in one of the pair of electrodes of the electron emitting devices arrayed at the same row, second wirings each interconnecting electrodes in another of the pair of electrodes of the electron emitting devices arrayed at the same column and higher in resistance than the first wirings, an insulating layer covering the second wirings, and resistive films connected to the first wirings and partially overlapping with the second wirings to cover the insulating layer, and having surface resistance set to 108Ω/□ or more. The resistive films are connected to the first wirings at portions not overlapping with the second wirings, and a length L of the resistive film between a portion of the resistive film connected to the first wiring and a portion overlapping with the second wiring satisfies a relationship.

摘要翻译： 图像显示装置包括：背板，包括各自包括一对电极和电子发射单元的电子发射器件，首先将排列在同一行的电子发射器件的一对电极中的每一个互连电极布线， 排列在同一列的电子发射器件的一对电极中的另一个电极中的互连电极，并且电阻高于第一布线，覆盖第二布线的绝缘层，以及连接到第一布线并与第二布线部分重叠的电阻膜 覆盖绝缘层的布线，表面电阻设定为108ΩΩ/□以上。 电阻膜在与第二布线不重叠的部分处连接到第一布线，并且电阻膜的连接到第一布线的部分和与第二布线重叠的部分之间的电阻膜的长度L满足关系。

公开(公告)号：US20110204418A1

公开(公告)日：2011-08-25

申请号：US13051455

申请日：2011-03-18

申请人： Toshikazu Onishi ,  Tatsuya Tanigawa ,  Shinichi Takigawa ,  Tsuyoshi Tanaka

发明人： Toshikazu Onishi ,  Tatsuya Tanigawa ,  Shinichi Takigawa ,  Tsuyoshi Tanaka

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/0692 ,  H01L29/41725 ,  H01L29/42316

摘要： A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.

摘要翻译： 太赫兹波辐射元件包括：形成在基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层之上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在第二氮化物半导体层上的源极，栅极和漏电极。 源电极由周期性地排列的多个源电极指形成，漏电极由周期性排列的多个漏电极指形成。

公开(公告)号：US20110169719A1

公开(公告)日：2011-07-14

申请号：US12985699

申请日：2011-01-06

申请人： Toshikazu Onishi ,  Tsuyoshi Takegami

发明人： Toshikazu Onishi ,  Tsuyoshi Takegami

IPC分类号： G09G3/20

CPC分类号： H01J1/316 ,  H01J9/027 ,  H01J29/02 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489

摘要： An image display apparatus includes a rear plate including electron emitting devices each including a pair of electrodes and an electron emitting unit, first wirings each interconnecting electrodes in one of the pair of electrodes of the electron emitting devices arrayed at the same row, second wirings each interconnecting electrodes in another of the pair of electrodes of the electron emitting devices arrayed at the same column and higher in resistance than the first wirings, an insulating layer covering the second wirings, and resistive films connected to the first wirings and partially overlapping with the second wirings to cover the insulating layer, and having surface resistance set to 108Ω/□ or more. The resistive films are connected to the first wirings at portions not overlapping with the second wirings, and a length L of the resistive film between a portion of the resistive film connected to the first wiring and a portion overlapping with the second wiring satisfies a relationship.

摘要翻译： 图像显示装置包括：背板，包括各自包括一对电极和电子发射单元的电子发射器件，首先将排列在同一行的电子发射器件的一对电极中的每一个互连电极布线， 排列在同一列的电子发射器件的一对电极中的另一个电极中的互连电极，并且电阻高于第一布线，覆盖第二布线的绝缘层，以及连接到第一布线并与第二布线部分重叠的电阻膜 覆盖绝缘层的布线，表面电阻设定为108ΩΩ/□以上。 电阻膜在与第二布线不重叠的部分处连接到第一布线，并且电阻膜的连接到第一布线的部分和与第二布线重叠的部分之间的电阻膜的长度L满足关系。

公开(公告)号：US07873090B2

公开(公告)日：2011-01-18

申请号：US11519973

申请日：2006-09-13

申请人： Toshikazu Onishi ,  Tetsuzo Ueda ,  Daisuke Ueda

发明人： Toshikazu Onishi ,  Tetsuzo Ueda ,  Daisuke Ueda

IPC分类号： H01S5/068 ,  H01S5/183 ,  H01S5/02 ,  H01S5/42

CPC分类号： H01S5/18355 ,  B82Y20/00 ,  H01L31/035281 ,  H01L31/105 ,  H01S5/02284 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18319 ,  H01S5/18344 ,  H01S5/18358 ,  H01S5/18386 ,  H01S5/3432 ,  H01S5/423 ,  Y02E10/50

摘要： A surface emitting laser includes a plurality of light-emitting portions for emitting laser light beams in different linearly polarized light directions. The light-emitting portions are formed on the substrate and located close to each other. The light-emitting portions include metal opening arrays through which light beams in different linearly polarized light directions respectively pass.

摘要翻译： 表面发射激光器包括用于在不同的线偏振光方向上发射激光束的多个发光部分。 发光部分形成在基板上并且彼此靠近。 发光部分包括分别通过不同线偏振光方向的光束的金属开口阵列。

公开(公告)号：US20050106771A1

公开(公告)日：2005-05-19

申请号：US11000207

申请日：2004-12-01

申请人： Toshikazu Onishi

发明人： Toshikazu Onishi

IPC分类号： H01L21/20 ,  H01L29/201 ,  H01L29/205 ,  H01L33/30 ,  H01L21/00 ,  H01L27/15 ,  H01L29/06

CPC分类号： H01L33/30 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02502 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L29/201 ,  H01L29/205

摘要： An AlGaInP layer is formed on a substrate made of GaAs, and an AlGaAs layer is formed on the AlGaInP layer via a buffer layer therebetween. The buffer layer has a thickness of about 1.1 nm and is made of AlGaInP whose Ga content is smaller than that of the AlGaInP layer. The buffer layer may alternatively be made of AlGaAs whose Al content is smaller than that of the AlGaAs layer.