公开(公告)号：US20070145391A1

公开(公告)日：2007-06-28

申请号：US11585212

申请日：2006-10-24

申请人： Doo Go Baik ,  Bang Won Oh ,  Tae Jun Kim

发明人： Doo Go Baik ,  Bang Won Oh ,  Tae Jun Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/145 ,  H01L33/0033 ,  H01L33/32

摘要： A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.

摘要翻译： 提供了一种垂直氮化物半导体发光器件及其制造方法。 在该器件中，在导电性基板上依次形成欧姆接触层，p型氮化物半导体层，有源层，n型氮化物半导体层和n电极。 接触欧姆接触层的p型氮化物半导体层的表面和与n电极接触的n型氮化物层的表面中的至少一个在其基本中心部分具有高的受损氮化物单晶的电阻面积 。 高电阻区域具有与欧姆接触层和n电极中的至少一个的肖特基结。

公开(公告)号：US07074652B2

公开(公告)日：2006-07-11

申请号：US10806433

申请日：2004-03-23

申请人： Jeong Goo Yoon ,  Bang Won Oh ,  Kuk Hwea Yi

发明人： Jeong Goo Yoon ,  Bang Won Oh ,  Kuk Hwea Yi

IPC分类号： H01L21/48 ,  G03C5/00

CPC分类号： H01L33/0095

摘要： Disclosed is a method for efficiently separating a sapphire wafer serving as a substrate, on which semiconductor elements are formed, into unit chips by scribing the sapphire wafer, after grinding and lapping a rear surface of the sapphire wafer and then sand-blasting the sapphire wafer. The method includes the steps of: (a) grinding a rear surface of the sapphire wafer so that the sapphire wafer has a designated thickness; (b) lapping the rear surface of the ground sapphire wafer so that the sapphire wafer has a designated thickness; (c) polishing the rear surface of the lapped sapphire wafer so that the sapphire wafer has a designated thickness; (d) sand-blasting the rear surface of the polished sapphire wafer by uniformly blasting particles at a designated pressure during a designated time onto the rear surface of the polished sapphire wafer; and (e) scribing the rear surface of the sand-blast ground sapphire wafer.

摘要翻译： 公开了在研磨和研磨蓝宝石晶片的后表面之后，通过划片蓝宝石晶片将用作基板的蓝宝石晶片（其上形成有半导体元件）分离成单元芯片的方法，然后对蓝宝石晶片进行喷砂处理 。 该方法包括以下步骤：（a）研磨蓝宝石晶片的后表面，使得蓝宝石晶片具有指定的厚度; （b）研磨蓝宝石晶片的后表面，使得蓝宝石晶片具有指定的厚度; （c）抛光研磨的蓝宝石晶片的后表面，使得蓝宝石晶片具有指定的厚度; （d）通过在指定时间内将指定压力的颗粒均匀地喷射到抛光的蓝宝石晶片的后表面上来对抛光的蓝宝石晶片的后表面进行喷砂; 和（e）划线沙尘蓝宝石晶片的后表面。

公开(公告)号：US06774492B2

公开(公告)日：2004-08-10

申请号：US10321595

申请日：2002-12-18

申请人： Moon Bong Ahn ,  Bang Won Oh ,  Kwang Cheol Cho

发明人： Moon Bong Ahn ,  Bang Won Oh ,  Kwang Cheol Cho

IPC分类号： H01L2348

CPC分类号： H01L23/3121 ,  H01L23/4922 ,  H01L23/49827 ,  H01L24/48 ,  H01L2224/4848 ,  H01L2224/85051 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/181 ,  H01L2224/48465 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A chip package includes a chip having a first surface provided with a first terminal and a second surface provided with at least one second terminal, the second surface being opposite to the first surface, a first conductive layer formed on the first surface of the chip, a second conductive layer formed on the second surface of the chip, and a substrate attached to the second surface of the chip and including at least one conductive via hole connected to the second terminal of the chip. And the present invention provides a chip package assembly including the chip package. Further, a method of manufacturing the chip package and an assembly including the chip package are provided. The chip package does not use a bonding wire and additional conductive lands, thereby reducing the size of the package and simplifying the manufacturing process.

摘要翻译： 芯片封装包括具有设置有第一端子的第一表面和设置有至少一个第二端子的第二表面的芯片，第二表面与第一表面相对，形成在芯片的第一表面上的第一导电层， 形成在所述芯片的第二表面上的第二导电层，以及附着到所述芯片的第二表面的基板，并且包括连接到所述芯片的第二端子的至少一个导电通孔。 并且本发明提供了一种包括芯片封装的芯片封装组件。 此外，提供了一种制造芯片封装的方法和包括芯片封装的组件。 芯片封装不使用接合线和附加的导电焊盘，从而减小封装的尺寸并简化制造工艺。

公开(公告)号：US08664687B2

公开(公告)日：2014-03-04

申请号：US10898204

申请日：2004-07-26

申请人： Dong Hyun Cho ,  Masayoshi Koike ,  Yuiji Imai ,  Min Ho Kim ,  Bang Won Oh ,  Hun Joo Hahm

发明人： Dong Hyun Cho ,  Masayoshi Koike ,  Yuiji Imai ,  Min Ho Kim ,  Bang Won Oh ,  Hun Joo Hahm

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

摘要： Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.

摘要翻译： 提供一种氮化物半导体发光器件，其包括由AlN制成的多晶或非晶衬底; 形成在所述AlN基板上并具有条纹或格子结构的多个电介质图案; 通过横向外延生长形成在具有电介质图案的AlN衬底上的侧向外延氮化半导体层; 形成在所述氮化物半导体层上的第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上的有源层; 以及形成在所述有源层上的第二导电氮化物半导体层; 及其制造方法。

公开(公告)号：US07829882B2

公开(公告)日：2010-11-09

申请号：US11581335

申请日：2006-10-17

申请人： Sun Woon Kim ,  Je Won Kim ,  Sang Won Kang ,  Keun Man Song ,  Bang Won Oh

发明人： Sun Woon Kim ,  Je Won Kim ,  Sang Won Kang ,  Keun Man Song ,  Bang Won Oh

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32

摘要： The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.

摘要翻译： 本发明提供了一种改进了静电放电耐受电压的高度可靠的氮化物半导体发光器件。 在发光器件中，在衬底上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层。 有源层具有包括多个多量子势垒层和量子阱层的多量子阱结构。 至少一个量子势垒层具有带隙调制多层结构。

公开(公告)号：US20100213490A1

公开(公告)日：2010-08-26

申请号：US12711636

申请日：2010-02-24

申请人： Il Woo PARK ,  Yong Chun Kim ,  Na Na Park ,  Bang Won Oh

发明人： Il Woo PARK ,  Yong Chun Kim ,  Na Na Park ,  Bang Won Oh

IPC分类号： H01L33/50 ,  H01L33/56 ,  H01L33/58 ,  C08L63/04 ,  C09K11/02

CPC分类号： H05B33/04 ,  C08G59/306 ,  C08G59/3281 ,  C08L63/00 ,  H01L33/501 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： According to an aspect of the present invention, there is provided a sealing composition for a light emitting device, the sealing composition including: a silicone/epoxy compound resin including a silicone resin having at least one silicon atom-bonded hydroxyl group and an epoxy resin having at least one oxirane group while the hydroxyl group of the silicone resin and the oxirane group of the epoxy resin are chemically bound to each other.

摘要翻译： 根据本发明的一个方面，提供了一种用于发光器件的密封组合物，所述密封组合物包括：包含具有至少一个与硅原子键合的羟基的硅酮树脂和环氧树脂的硅氧烷/环氧化合物树脂 具有至少一个环氧乙烷基团，而硅氧烷树脂的羟基和环氧树脂的环氧乙烷基团彼此化学键合。

公开(公告)号：US20090181485A1

公开(公告)日：2009-07-16

申请号：US12406540

申请日：2009-03-18

申请人： Doo Go BAIK ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeo Lee

发明人： Doo Go BAIK ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeo Lee

IPC分类号： H01L21/20

CPC分类号： H01L33/14 ,  H01L33/02 ,  H01L33/32

摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.

摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。 垂直GaN基LED包括：支承层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

公开(公告)号：US07436001B2

公开(公告)日：2008-10-14

申请号：US11490254

申请日：2006-07-21

申请人： Jae Hoon Lee ,  Bang Won Oh ,  Hee Seok Choi ,  Jeong Tak Oh ,  Seok Beom Choi ,  Su Yeol Lee

发明人： Jae Hoon Lee ,  Bang Won Oh ,  Hee Seok Choi ,  Jeong Tak Oh ,  Seok Beom Choi ,  Su Yeol Lee

IPC分类号： H01L27/15

CPC分类号： H01L33/22 ,  H01L33/14

摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.

摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED包括n电极，第一n型GaN层，第一AlGaN层，GaN层，第二AlGaN层，第二n型GaN层，有源层，p型 GaN层和结构支撑层。 第一n型GaN层具有具有多个突起的不均匀图案。 第一AlGaN层形成在第一n型GaN层下方，并且GaN层形成在第一AlGaN层的下方。 有源层形成在第二n型GaN层下面，p型GaN层形成在有源层下面。 在p型GaN层的下方形成有p电极，在p电极的下方形成有结构支撑层。

公开(公告)号：US20070228388A1

公开(公告)日：2007-10-04

申请号：US11651023

申请日：2007-01-09

申请人： Kun Yon Ko ,  Bang Won Oh ,  Hun Joo Hahm ,  Je Won Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Dong Woo Kim

发明人： Kun Yon Ko ,  Bang Won Oh ,  Hun Joo Hahm ,  Je Won Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Dong Woo Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.

摘要翻译： 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极，形成在从p型电极焊盘延伸的线中，以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极，其从p型连接电极的两端沿着n型电极焊盘的方向延伸，p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘，形成在n型氮化物半导体层上，其上没有形成有源层，使得n型电极焊盘面向p型电极焊盘。

公开(公告)号：US07119375B2

公开(公告)日：2006-10-10

申请号：US11012331

申请日：2004-12-16

申请人： Doo Go Baik ,  Bang Won Oh ,  Hak Kyu Kim

发明人： Doo Go Baik ,  Bang Won Oh ,  Hak Kyu Kim

IPC分类号： H01L29/22

CPC分类号： H01L33/46 ,  H01L33/0079

摘要： A light emitting diode (LED) includes a substrate, a first conductive clad layer formed on the substrate, an active layer formed on the first conductive clad layer, a second conductive clad layer formed on the active layer, an alumina (Al2O3) layer formed on the lower surface of the substrate, and an aluminum layer formed on the lower surface of the alumina (Al2O3) layer. The substrate may be removed, and the aluminum layer and the alumina layer are formed directly on the lower surface of the first conductive clad layer.

摘要翻译： 发光二极管（LED）包括基板，形成在基板上的第一导电覆层，形成在第一导电覆层上的有源层，形成在有源层上的第二导电覆层，氧化铝 形成在基材的下表面上的铝层和形成在氧化铝的下表面上的铝层（Al 2 O 3 > 3 ）层。 可以除去衬底，并且铝层和氧化铝层直接形成在第一导电覆层的下表面上。