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公开(公告)号：US08519411B2
公开(公告)日：2013-08-27
申请号：US12171638
申请日：2008-07-11
申请人： Yukie Nishikawa , Shinji Nunotani
发明人： Yukie Nishikawa , Shinji Nunotani
IPC分类号： H01L27/15
摘要： A semiconductor light emitting device includes an active layer, an electrode formed above the active layer, a current spreading layer formed between the active layer and the electrode, having n-type conductivity, having a larger bandgap energy than the active layer, and spreading electrons injected from the electrode in the plane of the active layer, and a surface processed layer formed on the current spreading layer, having a larger bandgap energy than the active layer, and having an uneven surface region with a large number of concave-convex structures. The electrode is not formed on the uneven surface region. The conduction band edge energy from the Fermi level of the surface processed layer is higher than that of the current spreading layer.
摘要翻译： 半导体发光器件包括有源层，在有源层上形成的电极，形成在有源层和电极之间的电流扩展层，具有n型导电性，具有比有源层更大的带隙能量，并且扩散电子 从有源层的平面中的电极注入，形成在电流扩散层上的表面处理层具有比有源层更大的带隙能量，并且具有大量凹凸结构的不均匀表面区域。 电极不形成在不平坦的表面区域上。 来自表面处理层的费米能级的导带边缘能量高于当前扩散层的能带边缘能量。
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公开(公告)号：USRE44215E1
公开(公告)日：2013-05-14
申请号：US13270287
申请日：2011-10-11
申请人： Masahiro Yamamoto , Hidetoshi Fujimoto , Yoshihiro Kokubun , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa , John Rennie
发明人： Masahiro Yamamoto , Hidetoshi Fujimoto , Yoshihiro Kokubun , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa , John Rennie
CPC分类号： H01L33/20 , H01L33/16 , H01S5/0202 , H01S5/0213 , H01S5/3202 , H01S5/3226 , H01S5/32341 , Y10S438/973 , Y10S438/975
摘要： The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.
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23.发明申请公开(公告)号：US20070215924A1
公开(公告)日：2007-09-20
申请号：US11684757
申请日：2007-03-12
申请人： Yukie Nishikawa , Akira Takashima , Tatsuo Shimizu
发明人： Yukie Nishikawa , Akira Takashima , Tatsuo Shimizu
IPC分类号： H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L29/42324 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L29/513 , H01L29/7885
摘要： A memory cell in a nonvolatile semiconductor memory device includes a tunneling insulating film, a floating gate electrode made of a Si containing conductive material, an inter-electrode insulating film made of rare-earth oxide, rare-earth nitride or rare-earth oxynitride, a control gate electrode, and a metal silicide film formed between the floating gate electrode and the inter-electrode insulating film.
摘要翻译： 非易失性半导体存储器件中的存储单元包括隧道绝缘膜，由含Si导电材料制成的浮栅，由稀土氧化物制成的电极间绝缘膜，稀土氮化物或稀土氧氮化物， 一个控制栅极电极和一个形成在浮置栅电极和电极间绝缘膜之间的金属硅化物膜。
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公开(公告)号：US07015121B2
公开(公告)日：2006-03-21
申请号：US10910578
申请日：2004-08-04
申请人： Yuichiro Mitani , Yukie Nishikawa
发明人： Yuichiro Mitani , Yukie Nishikawa
IPC分类号： H01L21/20
CPC分类号： H01L21/02609 , H01L21/02532 , H01L21/02675 , H01L21/2022 , H01L21/28017 , H01L21/28035 , H01L21/28185 , H01L21/28194 , H01L21/76262 , H01L29/4908 , H01L29/4916 , H01L29/517 , H01L29/66757 , H01L29/66765 , H01L29/66772 , H01L29/78675
摘要： A method of manufacturing a semiconductor device comprises a step of depositing a crystalline insulating layer oriented in a predetermined crystal face orientation by epitaxial growth on an amorphous semiconductor layer, a step of depositing a second amorphous semiconductor layer on the crystalline insulating layer, a step of growing said first and second semiconductor layers into a polycrystal or single crystal layer in a solid phase, using said crystalline insulating film as core, and a step of forming a functional element containing said first and second semiconductor layer.
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公开(公告)号：US5821555A
公开(公告)日：1998-10-13
申请号：US618823
申请日：1996-03-20
CPC分类号： H01L33/025 , H01L33/007 , H01L33/0087
摘要： A semiconductor device includes a first semiconductor layer formed of first semiconductor, a second semiconductor layer formed on the first semiconductor layer and formed of second semiconductor of a group different from a group to which the first semiconductor belongs, and a third semiconductor layer formed between the first and second semiconductor layers, the third semiconductor layer being one of a layer formed of third semiconductor of the same group as the first semiconductor and having an impurity concentration higher than the first semiconductor layer and a layer formed of fourth semiconductor of the same group as the second semiconductor and having an impurity concentration higher than the second semiconductor layer.
摘要翻译： 半导体器件包括由第一半导体形成的第一半导体层，形成在第一半导体层上并由不同于第一半导体所属的基团的第二半导体形成的第二半导体层以及形成在第一半导体之间的第三半导体层 第一和第二半导体层，第三半导体层是由与第一半导体相同的组的第三半导体形成的层，其杂质浓度高于第一半导体层，由与第一半导体层相同的第四半导体形成的层 所述第二半导体具有高于所述第二半导体层的杂质浓度。
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26.发明授权
公开(公告)号：US5585649A
公开(公告)日：1996-12-17
申请号：US404287
申请日：1995-03-14
申请人： Masayuki Ishikawa , Yukie Nishikawa , Masaaki Onomura , Shinji Saito , Peter J. Parbrook , Genichi Hatakoshi
发明人： Masayuki Ishikawa , Yukie Nishikawa , Masaaki Onomura , Shinji Saito , Peter J. Parbrook , Genichi Hatakoshi
IPC分类号： H01L29/43 , H01L21/28 , H01L33/06 , H01L33/14 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/327 , H01L33/00
CPC分类号： H01S5/327 , H01L33/145 , H01L33/28 , H01L33/32 , H01L33/40 , H01S5/2211 , H01S5/2231
摘要： A compound semiconductor device with an improved internal current blocking structure. The semiconductor device includes an n-clad layer of II-VI compound semiconductor, a p-clad layer of II-VI compound semiconductor, an active layer of II-VI compound semiconductor between the n-clad and p-clad layers, a very thin current blocking layer of n-type II-VI compound semiconductor on the p-clad layer and providing an opening, a p-contact layer of p-type II-VI compound semiconductor on the p-clad layer and the current blocking layer at the opening, and a p-side electrode on the p-contact layer.
摘要翻译： 具有改善的内部电流阻挡结构的化合物半导体器件。 该半导体器件包括II-VI族化合物半导体的n覆盖层，II-VI族化合物半导体的p覆盖层，n型覆层和p型覆层之间的II-VI族化合物半导体的有源层， 在p覆盖层上提供n型II-VI族化合物半导体的薄电流阻挡层，并且在p覆盖层上提供开口，p型II-VI化合物半导体的p接触层和当前阻挡层 开口和p接触层上的p侧电极。
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公开(公告)号：US4922499A
公开(公告)日：1990-05-01
申请号：US307927
申请日：1989-02-09
CPC分类号： H01L33/0062 , H01S5/20 , H01S5/2231 , H01S5/2059 , H01S5/321 , H01S5/32325 , Y10S148/095 , Y10S148/157
摘要： A gain waveguide type semiconductor laser oscillating visible light has an N type GaAs substrate of, and a double-heterostructure provided above the substrate to include an InGap active layer, and first and second cladding layers sandwiching the active layer. The first cladding layer consists of N type InGaAlP, whereas the second cladding layer consists of P type InGaAlP. A P type InGaP layer is formed as an intermediate band-gap layer on the second cladding layer. An N type GaAs current-blocking layer is formed on the intermediate band-gap layer, and has an elongated waveguide opening. A P type GaAs contact layer is formed to cover the current-blocking layer and the opening. The intermediate band-gap layer has a carrier concentration, in a layer portion being in contact with the opening, high enough to cause a current injected in the oscillation mode to concentrate on the layer portion and has a carrier density, in the remaining layer portion, low enough to suppress or prevent the injected current from spreading thereinto. The layer portion may be formed by additionally doping a selected impurity into the intermediate gap layer by using a presently available impurity diffusion/injection technique.
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公开(公告)号：US09287448B2
公开(公告)日：2016-03-15
申请号：US13053527
申请日：2011-03-22
摘要： According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.
摘要翻译： 根据一个实施例，半导体发光元件包括发光层，第一导电类型的电流扩展层和焊盘电极。 发光层能够发光。 电流扩散层具有第一表面和第二表面。 发光层设置在第一表面的一侧。 在第二表面中包括具有三角形截面形状的凸形结构和作为晶体生长面的平坦表面的光提取表面。 焊盘电极设置在平坦表面上。 凸结构的一个底角为90度以上。
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公开(公告)号：US20120273793A1
公开(公告)日：2012-11-01
申请号：US13219862
申请日：2011-08-29
IPC分类号： H01L33/60
CPC分类号： H01L33/38 , H01L33/14 , H01L33/405 , H01L33/42 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.
摘要翻译： 根据一个实施例，半导体发光器件包括衬底，第一电极，第一导电类型层，发光层，第二导电类型层和第二电极。 第一导电类型层包括第一接触层，具有比第一接触层低的杂质浓度的窗口层和第一包层。 第二导电类型层包括第二包覆层，电流扩散层和第二接触层。 第二电极包括在第二接触层上的窄线区域和电连接到窄线区域的焊盘区域。 第一触点和窗口层的带隙能量大于发光层的带隙能量。 选择性地在窗口层和第一电极之间提供第一接触层，并且从上方观察不与第二接触层重叠。
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公开(公告)号：US20120146072A1
公开(公告)日：2012-06-14
申请号：US13053527
申请日：2011-03-22
IPC分类号： H01L33/60
摘要： According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.
摘要翻译： 根据一个实施例，半导体发光元件包括发光层，第一导电类型的电流扩展层和焊盘电极。 发光层能够发光。 电流扩散层具有第一表面和第二表面。 发光层设置在第一表面的一侧。 在第二表面中包括具有三角形截面形状的凸形结构和作为晶体生长面的平坦表面的光提取表面。 焊盘电极设置在平坦表面上。 凸结构的一个底角为90度以上。
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